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21. 发明授权

US06919480B2 Processes for the preparation of fluorinated acyl fluorides and fluorinated vinyl ethers 失效
标题翻译：氟化氟化物和氟化乙烯基醚的制备方法
公开(公告)号：US06919480B2
公开(公告)日：2005-07-19
申请号：US10727610
申请日：2003-12-05
申请人： Takashi Okazoe , Kunio Watanabe , Masahiro Ito , Daisuke Shirakawa , Shin Tatematsu
发明人： Takashi Okazoe , Kunio Watanabe , Masahiro Ito , Daisuke Shirakawa , Shin Tatematsu
IPC分类号： C07C41/48 , C07C43/313 , C07C51/58 , C07D317/42 , C08F16/24 , C08F24/00 , C07C51/62
CPC分类号： C08F24/00 , C07C41/48 , C07C51/58 , C07D317/42 , C08F16/24 , C07C59/135 , C07C43/313
摘要： The present invention provides novel processes for preparing a fluorinated acyl fluoride and a fluorinated vinyl ether.Namely, it provides a process for preparing a fluorinated acyl fluoride (3), which comprises reacting a compound (1) having a fluorine content of 30 mass % or above with fluorine in a liquid phase to form a compound (2) and then dissociating the ester bond in the compound (2), and a process for preparing a fluorinated vinyl ether (10), which comprises pyrolyzing the fluorinated acyl fluoride: wherein RA and RB are alkyl groups or the like, or the combination RA and RB is an ethereal oxygen-containing alkylene group or the like, RC and RD are perfluoro(ethereal oxygen-containing alkyl) groups or the like, or the combination of RC and RD is a perfluoro(ethereal oxygen-containing alkylene) group or the like, X1, X2, X3, X4, X5 and X6 are hydrogen atoms, fluorine atoms or the like, RAF, RBF, RCF and RDF are groups derived respectively from RA, RB, RC and RD by replacing substantially all of the hydrogen atoms by fluorine atoms.
摘要翻译：本发明提供了制备氟化酰氟和氟化乙烯基醚的新方法。即，提供一种制备氟化酰基氟（3）的方法，其包括使氟含量为30质量％以上的化合物（1）与氟在液相中反应以形成化合物（2），然后解离化合物（2）中的酯键和制备氟化乙烯基醚（10）的方法，其包括热解氟化酰基氟：其中R A A和R B B >是烷基等，或者组合R A和B B是含醚的含氧亚烷基等，R 0 C >和R“D”是全氟（醚类含氧烷基）基团等，或者R 0和R D 2的组合是全氟（醚性亚烷基）亚烷基等，X 1，X 2，X 3，X 4， SUP>，X 5和X 6是氢原子，氟原子等，R AF，BF，BF >，R＆lt; CF＆gt;和R＆gt; DF 是分别由R A，R B，R C和R D D衍生的基团，用氟原子代替基本上所有的氢原子。

22. 发明授权

US06894187B2 Method for producing a fluorine-containing compound 有权
标题翻译：含氟化合物的制造方法
公开(公告)号：US06894187B2
公开(公告)日：2005-05-17
申请号：US10340634
申请日：2003-01-13
申请人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Masahiro Ito , Daisuke Shirakawa , Masao Iwaya , Hidekazu Okamoto
发明人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Masahiro Ito , Daisuke Shirakawa , Masao Iwaya , Hidekazu Okamoto
IPC分类号： C07C51/58 , C07C55/40 , C07C59/135 , C07C67/307 , C07C69/63 , C07C69/708 , C07C69/66 , C07C57/64
CPC分类号： C07C69/708 , C07C51/58 , C07C55/40 , C07C59/135 , C07C67/307 , C07C69/63
摘要： The present invention provides a method for obtaining a compound useful as a raw material for various fluororesins in high yield by a short process by using a starting material which is inexpensive and readily available.
摘要翻译：本发明提供一种通过使用廉价且易于获得的起始材料，通过短时间获得用作各种氟树脂的原料的化合物的方法。

23. 发明授权

US06864541B2 Semiconductor device having a protruded active region, memory system having the same, and electronic apparatus having the same 有权
标题翻译：具有突出有源区域的半导体器件，具有该有源区域的存储器系统和具有该有源区域的电子设备
公开(公告)号：US06864541B2
公开(公告)日：2005-03-08
申请号：US10072316
申请日：2002-02-08
申请人： Junichi Karasawa , Kunio Watanabe
发明人： Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8244 , H01L23/52 , H01L27/04 , H01L27/11 , H01L29/76
CPC分类号： H01L27/1104 , Y10S257/903
摘要： A semiconductor device is provided with an SRAM memory cell. The semiconductor device includes a first gate-gate electrode layer, a second gate-gate electrode layer, a first drain-drain wiring layer, a second drain-drain wiring layer, a first drain-gate wiring layer and second drain-gate wiring layers. The first drain-gate wiring layer and an upper layer and a lower layer of the second drain-gate wiring layer are located in different layers, respectively. A first protruded active region is provided in a manner to protrude from an end portion of the first active region.
摘要翻译：半导体器件设置有SRAM存储单元。半导体器件包括第一栅极 - 栅极电极层，第二栅极 - 栅极电极层，第一漏极 - 漏极布线层，第二漏极 - 漏极布线层，第一漏极 - 栅极布线层和第二漏极 - 栅极布线层。第一漏极 - 栅极布线层和第二漏极 - 栅极布线层的上层和下层分别位于不同的层中。第一突出的有源区域以从第一有源区域的端部突出的方式设置。

24. 发明授权

US06815777B2 Semiconductor device, memory system and electronic apparatus 有权
标题翻译：半导体器件，存储器系统和电子设备
公开(公告)号：US06815777B2
公开(公告)日：2004-11-09
申请号：US10092393
申请日：2002-03-05
申请人： Junichi Karasawa , Kunio Watanabe
发明人： Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2976
CPC分类号： H01L27/11 , H01L27/1104
摘要： A semiconductor device is provided with a memory cell. The semiconductor device includes a first gate-gate electrode layer, a second gate-gate electrode layer, a first drain-drain wiring layer, a second drain-drain wiring layer, a first drain-gate wiring layer and a second drain-gate wiring layer. The first drain-gate wiring layer and an upper layer and a lower layer of the second drain-gate wiring layer are located in different layers, respectively.
摘要翻译：半导体器件设置有存储单元。半导体器件包括第一栅极 - 栅极电极层，第二栅极 - 栅极电极层，第一漏极 - 漏极布线层，第二漏极 - 漏极布线层，第一漏极 - 栅极布线层和第二漏极 - 栅极布线层。第一漏极 - 栅极布线层和第二漏极 - 栅极布线层的上层和下层分别位于不同的层中。

25. 发明授权

US06747322B2 Semiconductor device, memory system and electronic apparatus 有权
标题翻译：半导体器件，存储器系统和电子设备
公开(公告)号：US06747322B2
公开(公告)日：2004-06-08
申请号：US10154423
申请日：2002-05-21
申请人： Junichi Karasawa , Kunio Watanabe
发明人： Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2976
CPC分类号： H01L27/1104
摘要： A semiconductor device having a memory cell including first and second load transistors, first and second driver transistors, and first and second transfer transistors. The semiconductor device includes first and second gate—gate electrode layers, first and second drain—drain wiring layers, and first and second drain-gate wiring layers. The first drain-gate wiring layer and the second drain-gate wiring layer are located in different layers. The first drain-gate wiring layer is located below the first drain—drain wiring layer, and the second drain-gate wiring layer is located in above the first drain—drain wiring layer. This structure provides a semiconductor device that has reduced cell area. The invention also provides a memory system and electronic apparatus that include the above semiconductor device.
摘要翻译：具有包括第一和第二负载晶体管，第一和第二驱动晶体管以及第一和第二转移晶体管的存储单元的半导体器件。半导体器件包括第一和第二栅极 - 栅极电极层，第一和第二漏极 - 漏极布线层以及第一和第二漏极 - 栅极布线层。第一漏极 - 栅极布线层和第二漏极 - 栅极布线层位于不同的层中。第一漏极 - 栅极布线层位于第一漏极 - 漏极布线层的下方，第二漏极 - 栅极布线层位于第一漏极 - 漏极布线层的上方。该结构提供了具有减小的单元面积的半导体器件。本发明还提供了包括上述半导体器件的存储器系统和电子设备。

26. 发明授权

US06320234B1 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06320234B1
公开(公告)日：2001-11-20
申请号：US09450102
申请日：1999-11-29
申请人： Junichi Karasawa , Kunio Watanabe , Takashi Kumagai
发明人： Junichi Karasawa , Kunio Watanabe , Takashi Kumagai
IPC分类号： H01L2976
CPC分类号： H01L27/105 , H01L27/1052
摘要： A semiconductor device has a semiconductor substrate having a peripheral circuit area and a memory cell area. A border region having a well of a first conductivity is formed between the peripheral circuit area and the memory cell area. A well of a second conductivity is formed in the peripheral circuit area. The well in the peripheral circuit area is in contact with the border region but not in contact with the memory cell area. Dummy transistors are formed in the border region. The dummy transistors are arranged with substantially the same transistor forming density as that of the memory cell area.
摘要翻译：半导体器件具有具有外围电路区域和存储单元区域的半导体衬底。在外围电路区域和存储单元区域之间形成具有第一导电性阱的边界区域。在外围电路区域形成第二导电性阱。外围电路区域中的阱与边界区域接触，但不与存储单元区域接触。在边界区域形成虚拟晶体管。虚拟晶体管被布置成与存储单元区域基本上相同的晶体管形成密度。

27. 发明授权

US06300229B1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06300229B1
公开(公告)日：2001-10-09
申请号：US09563130
申请日：2000-05-02
申请人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
发明人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2120
CPC分类号： H01L27/11 , H01L21/28518 , H01L21/76895 , H01L21/76897 , H01L27/1104
摘要： A method of manufacturing a semiconductor device comprising the following steps: forming first, second, and third wiring layers on a semiconductor substrate; forming first, second, and third cover dielectric layers for covering these wiring layers; forming a first impurity diffusion layer of a P type and a second impurity diffusion layer of an N type in an active region, and forming a third impurity diffusion layer of a P type and a fourth impurity diffusion layer of an N type in an active region; self-alignably forming a first local wiring layer for connecting the first impurity diffusion layer with the second wiring layer, and self-alignably forming a second local wiring layer for connecting the fourth impurity diffusion layer with the third wiring layer; in an interlayer dielectric layer, self-alignably forming a first contact hole by using the first and third cover dielectric layers as masking layers, and self-alignably forming a second contact hole by using the second cover dielectric layer as a masking layer; and forming fourth and fifth wiring layers in these contact holes, respectively.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成第一，第二和第三布线层; 形成用于覆盖这些布线层的第一，第二和第三覆盖电介质层; 在有源区中形成P型和N型的第二杂质扩散层的第一杂质扩散层，在有源区中形成P型的第三杂质扩散层和N型的第四杂质扩散层 ; 自对准地形成用于将第一杂质扩散层与第二布线层连接的第一局部布线层，并自对准地形成用于将第四杂质扩散层与第三布线层连接的第二局部布线层; 在层间电介质层中，通过使用第一和第三覆盖电介质层作为掩蔽层自对准地形成第一接触孔，并且通过使用第二覆盖电介质层作为掩蔽层自对准地形成第二接触孔; 并且在这些接触孔中分别形成第四和第五布线层。

28. 发明授权

US5938530A Image processing device and image processing method 失效
标题翻译：图像处理装置及图像处理方法
公开(公告)号：US5938530A
公开(公告)日：1999-08-17
申请号：US760804
申请日：1996-12-05
申请人： Kunio Watanabe
发明人： Kunio Watanabe
IPC分类号： A63F13/00 , A63F13/10 , G06T13/20 , A63F9/24
CPC分类号： H04N13/0018 , A63F13/00 , A63F13/10 , A63F2300/66 , A63F2300/6638 , A63F2300/8076
摘要： An object is to provide an image processing device that is capable of reproducing effectively objects or characters in a condition showing considerable variation, such as explosions or smoke.This image processing device is constituted of an output device and processing devices constituted of ROM that stores data constituting an object whose mode is anticipated to show a series of changes in prescribed time, the object being constituted of a plurality of portions, and that execute image processing whereby animation is effected in respect of each portion, the processing results from these processing devices being displayed on an output device.
摘要翻译：目的是提供一种图像处理装置，其能够在显示诸如爆炸或烟雾等显着变化的状况下有效地再现对象或人物。该图像处理装置由输出装置和ROM构成，该ROM由存储构成预定模式的目标的数据的ROM构成，该对象由规定时间的一系列变化构成，该对象由多个部分构成，并且执行图像对于每个部分进行动画处理，来自这些处理装置的处理结果被显示在输出装置上。

29. 发明授权

US5851702A Method for producing a photomask 失效
标题翻译：光掩模的制造方法
公开(公告)号：US5851702A
公开(公告)日：1998-12-22
申请号：US871977
申请日：1997-06-10
申请人： Kunio Watanabe , Shinji Kobayashi , Masashi Inoue
发明人： Kunio Watanabe , Shinji Kobayashi , Masashi Inoue
IPC分类号： G03F1/68 , G03F1/80 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/54 , G03F1/50
摘要： A method for producing a photomask of the present invention includes the steps of: forming a light-blocking film on a surface of a transparent substrate; forming a resist film for an EB on the light-blocking film; patterning the resist film by EB writing and development; and selectively etching the light-blocking film using the patterned resist film to form a photomask, wherein the light-blocking film has a thickness in the range of about 60 nm to about 70 nm.
摘要翻译：本发明的光掩模的制造方法包括以下步骤：在透明基板的表面上形成遮光膜; 在遮光膜上形成用于EB的抗蚀剂膜; 通过EB写作和开发来形成抗蚀膜; 并使用所述图案化的抗蚀剂膜选择性地蚀刻所述遮光膜以形成光掩模，其中所述遮光膜的厚度在约60nm至约70nm的范围内。

30. 发明授权

US5623013A Xonotlite-reinforced organic polymer composition 失效
标题翻译：黑云母增强有机聚合物组合物
公开(公告)号：US5623013A
公开(公告)日：1997-04-22
申请号：US510224
申请日：1995-08-02
申请人： Hideho Tanaka , Yukihiko Asano , Kunio Watanabe , Hisataka Uchimura
发明人： Hideho Tanaka , Yukihiko Asano , Kunio Watanabe , Hisataka Uchimura
IPC分类号： C08K7/10 , C08J5/10 , C08K3/34 , C08L23/00
CPC分类号： C08K7/10
摘要： A Xonotlite-reinforced organic polymer composition obtained by mixing (A) an organic polymer and (B) fibrous Xonotlite, in which the fibrous Xonotlite (1) satisfies conditions (a), (b), and (c):(a) 0.1 .mu.m.ltoreq.D.ltoreq.0.4 .mu.m(b) 1 .mu.m.ltoreq.L
摘要翻译：通过混合（A）有机聚合物和（B）纤维黑云母，其中纤维性雪钛石（1）满足条件（a），（b）和（c））得到的硬粒子增强有机聚合物组合物：（a）0.1 （c）10 / L / D其中D和L代表平均纤维直径，和纤维黑云母（B）的平均纤维长度分别为（2）通过氮吸附测定的BET比表面积不小于21m 2 / g; （3）用表面活性剂和/或偶联剂进行表面处理; 和（4）已经形成颗粒。该组合物表现出改进的机械特性和改善的耐热性和抗冲击性之间的平衡。

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