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21. 发明申请

US20140235738A1 LATENT CURING AGENT AND EPOXY COMPOSITIONS CONTAINING THE SAME 有权
标题翻译：专利固化剂和含有该固化剂的环氧组合物
公开(公告)号：US20140235738A1
公开(公告)日：2014-08-21
申请号：US14266910
申请日：2014-05-01
申请人： Masashi Horikiri , Atsushi Sudo , Takeshi Endo
发明人： Masashi Horikiri , Atsushi Sudo , Takeshi Endo
IPC分类号： C09J11/06
CPC分类号： C09J11/06 , C08G59/44 , C08G59/50 , C08K5/05 , C08K5/07 , C08K5/13 , C08K5/20 , C09J163/00
摘要： A latent curing agent obtained by the reaction of a coumarin compound of the general formula (1), where X and Y can be independently H, an alkyl group, a heteroalkyl group, an aromatic group, a heteroaromatic group or an acetyl group and Z can be H, OH, an alkyl group, a heteroalkyl group, an aromatic group, a heteroaromatic group with an amine of the general formula (2), where “a” is 1 or 2, A can be an alkylene group, a heteroalkylene group, an aromatic group, a heteroaromatic group, and B can be an alkyl group (if a=1), an alkylene group (if a=2), a heteroalkyl group (if a=1), a heteroalkylene group (if a=2), an aromatic group, a heteroaromatic group, a hydroxyl group (if a=1), a secondary amino group (if a=2), O or S (if a=2), whereby B has the valency “a”, or where B alone or where A and B together form a ring system selected from an aliphatic ring system, a heteroaliphatic ring system, or an aromatic ring system, can be used for curable compositions with a polyepoxide which has at least 2 1,2-epoxide groups per molecule.
摘要翻译：通过使通式（1）的香豆素化合物与X和Y可以独立地为H，烷基，杂烷基，芳族基团，杂芳族基团或乙酰基反应得到的潜在性固化剂，Z 可以是H，OH，烷基，杂烷基，芳族基团，具有通式（2）的胺的杂芳族基团，其中“a”是1或2，A可以是亚烷基，亚杂烷基基团，芳基，杂芳基，B可以是烷基（如果a = 1），亚烷基（如果a = 2），杂烷基（如果a = 1），则杂亚烷基 = 2），芳族基团，杂芳族基团，羟基（如果a = 1），仲氨基（如果a = 2），O或S（如果a = 2），其中B具有“a “或其中B单独或其中A和B一起形成选自脂族环系，杂脂族环系或芳环体系的环系统可用于具有多环氧化物的可固化组合物 ch每分子具有至少2个1,2-环氧基团。

22. 发明授权

US07893274B2 Process for producing amino acid N-carboxyanhydride 有权
标题翻译：制备氨基酸N-羧酸酐的方法
公开(公告)号：US07893274B2
公开(公告)日：2011-02-22
申请号：US11457035
申请日：2006-07-12
申请人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
发明人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
IPC分类号： C07D263/00
CPC分类号： C07C269/04 , C07C271/44 , C07C271/54
摘要： The present invention provides a process for producing an amino acid N-carboxyanhydride, which comprises reacting an amino acid or a derivative thereof with a compound represented by the following formula (1): wherein R1 and R2 represent the same or different electron-withdrawing substituents and each independently are an optionally substituted acyl group, an optionally substituted alkyloxycarbonyl group, an optionally substituted perfluoroalkyl group, an optionally substituted perchloroalkyl group, a cyano group, a halogen atom, or a nitro group; and a and b are the same or different and each are an integer of 1-5.
摘要翻译：本发明提供了一种制备氨基酸N-羧酸酐的方法，其包括使氨基酸或其衍生物与下式（1）表示的化合物反应：其中R 1和R 2表示相同或不同的吸电子取代基并且各自独立地为任选取代的酰基，任选取代的烷氧基羰基，任选取代的全氟烷基，任选取代的全氯烷基，氰基，卤素原子或硝基; a和b相同或不同，为1-5的整数。

23. 发明申请

US20080003369A1 Low Shrinking Amine-Curing Epoxy Compositions 审中-公开
标题翻译：低收缩胺固化环氧组合物
公开(公告)号：US20080003369A1
公开(公告)日：2008-01-03
申请号：US11780170
申请日：2007-07-19
申请人： Kazuya Uenishi , Masashi Horikiri , Atsushi Sudo , Takeshi Endo
发明人： Kazuya Uenishi , Masashi Horikiri , Atsushi Sudo , Takeshi Endo
IPC分类号： C09J163/00 , B05D3/02
CPC分类号： C08L63/00 , C08G59/626 , C08K5/1545
摘要： The present invention relates to the use of one or more 6-membered lactones condensed to an aromatic or heteroaromatic moiety as shrinkage-suppressing agents in amine-curing epoxy compositions, such compositions and the use of such compositions in adhesives, sealants and coatings.
摘要翻译：本发明涉及一种或多种在芳族或杂芳族部分缩合的6-元内酯在胺固化环氧组合物中的收缩抑制剂的用途，以及这些组合物在粘合剂，密封剂和涂料中的用途。

24. 发明授权

US09051293B2 Process for preparing episulfide compounds 有权
标题翻译：制备环硫化合物的方法
公开(公告)号：US09051293B2
公开(公告)日：2015-06-09
申请号：US14112795
申请日：2012-04-20
申请人： Akitake Nakamura , Takeshi Endo
发明人： Akitake Nakamura , Takeshi Endo
IPC分类号： C07D331/02
CPC分类号： C07D331/02
摘要： Provided is a method for producing an episulfide compound, the method including a step of thiating epoxy groups of (B) an epoxy compound by a reaction with (C) a thiating agent in the presence of (A) a polyhydric hydroxyl compound having two or more hydroxyl groups.
摘要翻译：提供了一种环硫化合物的制备方法，该方法包括在（A）具有两个或多个羟基化合物的多羟基化合物的存在下，通过与（C）硫化剂的反应，将（B）环氧化合物的环氧基更多的羟基。

25. 发明授权

US08440524B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08440524B2
公开(公告)日：2013-05-14
申请号：US13030790
申请日：2011-02-18
申请人： Hirokazu Fujiwara , Masaki Konishi , Jun Kawai , Takeo Yamamoto , Takeshi Endo , Takashi Katsuno , Yukihiko Watanabe , Narumasa Soejima
发明人： Hirokazu Fujiwara , Masaki Konishi , Jun Kawai , Takeo Yamamoto , Takeshi Endo , Takashi Katsuno , Yukihiko Watanabe , Narumasa Soejima
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , C21D1/09 , C22F1/10 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/324 , H01L21/67115 , H01L29/0615 , H01L29/0619 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/7813 , H01L29/872
摘要： A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.
摘要翻译：一种半导体器件的制造方法，该半导体器件包括由碳化硅构成的半导体衬底，与衬底的上表面接触的上表面电极和与衬底的下表面接触的下表面电极，该方法包括以下步骤：（ a）在基板的上表面侧上形成上表面结构，（b）在基板的下表面侧形成下表面结构。步骤（a）包括以下步骤：（a1）在基板的上表面上沉积上表面电极材料层，上表面电极材料层是上表面电极的原料层，（a2）使上表面电极材料层。步骤（b）包括以下步骤：（b1）在基板的下表面上沉积下表面电极材料层，下表面电极材料层是下表面电极的原料层，（b2）使下表面电极材料层用激光器在下表面电极和衬底之间形成欧姆接触。

26. 发明申请

US20120194651A1 Shape measuring apparatus 审中-公开
标题翻译：形状测量仪
公开(公告)号：US20120194651A1
公开(公告)日：2012-08-02
申请号：US13200652
申请日：2011-09-28
申请人： Kenta Kanto , Seiho Yamashita , Takeshi Endo
发明人： Kenta Kanto , Seiho Yamashita , Takeshi Endo
IPC分类号： H04N13/02
CPC分类号： G01B11/24 , G01B11/00 , G06T7/571
摘要： [PROBLEMS] To provide a shape measuring apparatus having a configuration which enables the operation for aligning a measuring probe and a candidate object to be simplified when the shape of the candidate object is measured.[MEANS TO SOLVE THE PROBLEMS] A shape measuring apparatus is configured so that an optical probe 20 moves relative to a candidate object, and the three-dimensional shape of the candidate object is measured without contact from information obtained by the optical probe 20. The shape measuring apparatus includes a gantry structure 10 allowing the optical probe 20 to be moved to a predetermined position relative to the candidate object, and a support device 30 allowing the candidate object to be rotated around at least two rotational axes.
摘要翻译：本发明提供一种形状测量装置，其具有能够在测量候选物体的形状时使测量探针和候选物体对准的操作简化的构造。解决问题的手段形状测量装置被配置为使得光学探针20相对于候选物体移动，并且测量候选物体的三维形状而不与光学探针20获得的信息接触。形状测量装置包括允许光学探头20相对于候选物体移动到预定位置的台架结构10，以及允许候选物体围绕至少两个旋转轴线旋转的支撑装置30。

27. 发明申请

US20110262185A1 EXPOSURE DEVICE, IMAGE FORMING APPARATUS AND MIRROR ADJUSTING METHOD 有权
标题翻译：曝光装置，图像形成装置和镜像调整方法
公开(公告)号：US20110262185A1
公开(公告)日：2011-10-27
申请号：US13090977
申请日：2011-04-20
申请人： Takeshi Endo
发明人： Takeshi Endo
IPC分类号： G03G15/04
CPC分类号： G03G15/04072 , G03G15/0435 , G03G21/1666 , G03G2215/0404 , G03G2221/1636
摘要： An exposure device includes a mirror to reflect light used for exposure of an object, a holder to hold the mirror, an adhesive that bonds the mirror to the holder and elastically deforms, and an adjusting tool that pushes the mirror to change a direction of the mirror.
摘要翻译：曝光装置包括用于反射用于物体曝光的光的反射镜，用于保持反射镜的保持器，将反射镜粘合到保持器并弹性变形的粘合剂，以及调节工具，其推动反射镜以改变方向镜子。

28. 发明授权

US07825017B2 Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces 有权
标题翻译：制造具有不平坦表面的多层钝化膜的碳化硅半导体器件的方法
公开(公告)号：US07825017B2
公开(公告)日：2010-11-02
申请号：US12406578
申请日：2009-03-18
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
IPC分类号： H01L21/28 , H01L21/283 , H01L21/44 , H01L21/441 , H01L31/0312 , H01L29/47
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0611 , H01L29/063 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/8083 , H01L2224/02166 , H01L2224/04042 , H01L2224/05552 , H01L2224/05567 , H01L2924/0002 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.
摘要翻译：设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。钝化膜具有开口，表面电极通过该开口暴露在外部。钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

29. 发明授权

US07824995B2 SiC semiconductor device and method for manufacturing the same 有权
标题翻译： SiC半导体器件及其制造方法
公开(公告)号：US07824995B2
公开(公告)日：2010-11-02
申请号：US12071717
申请日：2008-02-26
申请人： Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
发明人： Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
IPC分类号： H01L29/72
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/045 , H01L29/0847 , H01L29/1608 , H01L29/51 , H01L29/66068
摘要： A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.
摘要翻译： SiC半导体器件包括：具有主表面的SiC衬底; 衬底上的沟道区; 分别在通道区域的上游侧和下游侧的第一和第二杂质区域; 通过栅极绝缘膜在沟道区上形成栅极。用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于2.6×1020cm-3。界面提供垂直于（0001）取向平面的通道表面。

30. 发明申请

US20100103490A1 Optical Information Recording Reproducing Apparatus 审中-公开
标题翻译：光信息记录再生装置
公开(公告)号：US20100103490A1
公开(公告)日：2010-04-29
申请号：US12579571
申请日：2009-10-15
申请人： Kazutaka Noguchi , Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Hiroyuki Matsuda , Shigeru Yamasaki
发明人： Kazutaka Noguchi , Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Hiroyuki Matsuda , Shigeru Yamasaki
IPC分类号： G03H1/04 , G03H1/22
CPC分类号： G03H1/0486 , G03H1/2286 , G03H2001/0491 , G03H2222/36 , G11B7/0065 , G11B7/08564 , G11B7/131
摘要： In the optical information recording reproducing apparatus that makes a reference light beam to interfere with an information light beam so as to record the information of the information light beam in a recording medium based on a two light beam interference method, or irradiates the reference light beam to a recording medium so as to emit a light beam and reproduces information stored in the recording medium by leading the light beam emitted from the recording medium an the image light receiving element, the optical information recording reproducing apparatus comprises a detector to detect positional deviation of at least one of the reference light beam and the information light beam from a predetermined optical path; and a correcting mechanism to correct the positional deviation based on an output from the detector.
摘要翻译：在使基准光束干涉信息光束以便根据两种光束干涉法将信息光束的信息记录在记录介质中的光信息记录重放装置中，或照射参考光束通过将从记录介质发射的光束引导到图像光接收元件而发射光束并再现存储在记录介质中的信息，光信息记录再现装置包括检测器，以检测位置偏差来自预定光路的参考光束和信息光中的至少一个; 以及基于来自检测器的输出来校正位置偏差的校正机构。

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