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21. 发明申请

US20130064496A1 OPTICAL LINKS, MANUFACTURING METHODS THEREOF, AND MEMORY SYSTEMS HAVING THE SAME 有权
标题翻译：光学链接及其制造方法及其相关记忆系统
公开(公告)号：US20130064496A1
公开(公告)日：2013-03-14
申请号：US13549845
申请日：2012-07-16
申请人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
发明人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： H04B10/25 , G02B6/107 , G02B6/12004 , G02B6/12007 , G02B6/14 , G02B6/29344 , G02B6/2938 , Y10T29/49
摘要： An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.
摘要翻译：光链路可以包括主光波导; N个子光波导，其中N是自然数; N模耦合器，其被配置为在所述主光波导与所述N个子光波导中的相应一个之间执行模式耦合操作; 以及连接到主光波导的输出端子和N个子光波导中的每一个的输出端子的光波长滤波器。存储器系统可以包括存储器设备，存储器控制器和光学链路。数据处理系统可以包括存储器系统和通过总线连接到存储器系统的中央处理单元。

22. 发明授权

US08379470B2 Semiconductor memory devices, controllers, and semiconductor memory systems 有权
标题翻译：半导体存储器件，控制器和半导体存储器系统
公开(公告)号：US08379470B2
公开(公告)日：2013-02-19
申请号：US12855409
申请日：2010-08-12
申请人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
发明人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
IPC分类号： G11C13/04
CPC分类号： G06F13/4243 , G02B6/43
摘要： A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.
摘要翻译：半导体存储器系统包括光学互连的控制器和存储器件。所述控制器包括：控制逻辑，被配置为产生用于控制所述存储器件的控制信号;以及发射器，被配置为将所述控制信号转换为光信号，并输出所述光信号。存储装置包括：接收单元滤波器，被配置为基于与光信号或电信号的周期相对应的电源电压将光信号转换为电信号。

23. 发明申请

US20120155888A1 OPTICAL MODULATOR WITH REDUCED SIZE AND OPTICAL TRANSMITTER INCLUDING THE SAME 有权
标题翻译：具有减小尺寸的光学调制器和包括其的光学发射器
公开(公告)号：US20120155888A1
公开(公告)日：2012-06-21
申请号：US13313532
申请日：2011-12-07
申请人： Ho-Chul Ji , Kyoung Ho Ha , Dong Jae Shin , Jung Hyung Pyo , Kwang Hyun Lee
发明人： Ho-Chul Ji , Kyoung Ho Ha , Dong Jae Shin , Jung Hyung Pyo , Kwang Hyun Lee
IPC分类号： H04B10/04
CPC分类号： G02B6/305 , G02B6/30 , G02F1/225 , G02F2201/307
摘要： An optical modulator includes a light input/output unit receiving an incident optical signal which has not been modulated, splitting the incident optical signal into a first optical signal and a second optical signal, and transmitting the first and second optical signals to a first path and a second path, respectively, of an optical waveguide. A phase shifter is positioned in at least one of the first and second paths and modulates a phase of at least one of the first and second optical signals, which have been received through the first and second paths, respectively, in response to an electrical signal. A phase-modulated signal is output. A reflective grating coupler reflects signals respectively received through the first and second paths back along the first and second paths respectively.
摘要翻译：光调制器包括：光输入/输出单元，接收尚未调制的入射光信号，将入射光信号分为第一光信号和第二光信号，并将第一和第二光信号传输到第一路径; 分别是光波导的第二路径。移相器被定位在第一和第二路径中的至少一个中，并且分别响应于电信号调制已经通过第一和第二路径接收的第一和第二光信号中的至少一个的相位。输出相位调制信号。反射光栅耦合器分别沿着第一和第二路径反射分别通过第一和第二路径接收的信号。

24. 发明申请

US20120099813A1 Phase Shifter and Electro-Optic Modulation Device Including the Same 有权
标题翻译：移相器和电光调制装置包括它
公开(公告)号：US20120099813A1
公开(公告)日：2012-04-26
申请号：US13239936
申请日：2011-09-22
申请人： Kwang-Hyun Lee , Dong-Jae Shin , Kyoung-Ho Ha
发明人： Kwang-Hyun Lee , Dong-Jae Shin , Kyoung-Ho Ha
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F1/2257 , G02F2201/066 , G02F2201/15
摘要： A phase shifter includes an optical waveguide, a plurality of impurity regions and a plurality of electrodes. The optical waveguide receives an optical input signal and outputs an optical output signal. The impurity regions include respective charge carriers. The impurity regions are disposed in contact with the optical waveguide at respective contact surface, where at least one of the contact surfaces has a zigzag pattern. The electrodes are connected to the respective impurity regions. Application of an electrical signal to at least one of the electrodes phase-shifts the optical output signal with respect to the optical input signal. Therefore, the phase shifter may efficiently vary a magnitude of the phase shift of the optical output signal.
摘要翻译：移相器包括光波导，多个杂质区和多个电极。光波导接收光输入信号并输出光输出信号。杂质区域包括各自的载流子。杂质区域设置成在相应的接触表面处与光波导接触，其中至少一个接触表面具有锯齿形图案。电极连接到各个杂质区域。将电信号施加到至少一个电极相对于光输入信号使光输出信号相移。因此，移相器可以有效地改变光输出信号的相移幅度。

25. 发明申请

US20120087673A1 OPTICAL INTERCONNECTION SYSTEM FOR TRANSMITTING AND RECEIVING A THREE-LEVEL SIGNAL AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：用于发送和接收三级信号的光学互连系统及其操作方法
公开(公告)号：US20120087673A1
公开(公告)日：2012-04-12
申请号：US13323105
申请日：2011-12-12
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/00
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

26. 发明申请

US20120070151A1 Optical Modulators for Generating De-Emphasis Formatted Optical Signals and Methods of Operating the Same 有权
标题翻译：用于生成去加重格式光学信号的光学调制器及其操作方法
公开(公告)号：US20120070151A1
公开(公告)日：2012-03-22
申请号：US13177806
申请日：2011-07-07
申请人： Dong Jae Shin , Kwang Hyun Lee , Jung Hyung Pyo , Kyoung Ho Ha , Ho-Chul Ji
发明人： Dong Jae Shin , Kwang Hyun Lee , Jung Hyung Pyo , Kyoung Ho Ha , Ho-Chul Ji
IPC分类号： H04B10/12 , H04J14/00
CPC分类号： H04B10/5053 , H04B10/516
摘要： A de-emphasis format signal generator can be configured to combine first and second electrical non-de-emphasis formatted signals provided to first and second optical modulators, coupled in parallel with one another, to provide a combined optical signal having a de-emphasis format. Accordingly, three aspects of a de-emphasis formatted signal, including a de-emphasis delay aspect, a de-emphasis attenuation aspect, and a de-emphasis combining aspect, can provided separately and in different domains (such as in the electrical domain and in the optical domain) which can be combined with one another to provide an output de-emphasis formatted optical signal.
摘要翻译：去加重格式信号发生器可以被配置为组合提供给彼此并联耦合的第一和第二光调制器的第一和第二电非去加重格式化信号，以提供具有去加重格式的组合光信号。因此，包括去加重延迟方面，去加重衰减方面和去加重组合方面的去加重格式化信号的三个方面可以分别提供在不同的领域（例如在电域和在光域中），其可以彼此组合以提供输出去加重格式的光信号。

27. 发明申请

US20110133063A1 Optical waveguide and coupler apparatus and method of manufacturing the same 有权
标题翻译：光波导和耦合器装置及其制造方法
公开(公告)号：US20110133063A1
公开(公告)日：2011-06-09
申请号：US12911415
申请日：2010-10-25
申请人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
发明人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
IPC分类号： G02B6/42 , G02B6/02 , G02B6/34 , G02B6/26 , H01L31/12
CPC分类号： G02B6/124 , G02B6/122 , G02B6/30 , G02B6/34 , G02B6/4214 , G02B2006/12104
摘要： Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
摘要翻译：光波导和耦合器器件和方法包括形成在体半导体衬底中的沟槽，例如体硅衬底。在沟槽中形成底层，在底面包层上形成芯部区域。可以在耦合器装置和/或波导装置下形成反射元件，例如分布式布拉格反射器。因为光学器件集成在大容量衬底中，所以它们可以根据硅光子学技术容易地与芯片上或芯片上的其它器件集成。具体地，例如，光学器件可以集成在DRAM存储器电路芯片芯片中。

28. 发明授权

US07826505B2 III-V group GaN-based compound semiconductor device 有权
标题翻译： III-V族GaN基化合物半导体器件
公开(公告)号：US07826505B2
公开(公告)日：2010-11-02
申请号：US11445220
申请日：2006-06-02
申请人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
发明人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S5/2004 , H01S5/2013 , H01S5/22 , H01S5/3213 , H01S5/3216
摘要： A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0
摘要翻译：提供了具有低电流消耗，高光输出和长寿命的改进结构的III-V族GaN基化合物半导体器件。 III-V族GaN基化合物半导体器件包括有源层和第一覆盖层和第二覆盖层，其中，第一覆盖层和第二覆盖层中的至少一个具有由多个交替形成的超晶格结构 Al x Ga（1-x）N层（0

29. 发明申请

US20100195420A1 SEMICONDUCTOR MEMORY DEVICE AND SYSTEM 审中-公开
标题翻译：半导体存储器件和系统
公开(公告)号：US20100195420A1
公开(公告)日：2010-08-05
申请号：US12689040
申请日：2010-01-18
申请人： Sung-dong SUH , Seong-gu Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Sung-dong SUH , Seong-gu Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： G11C7/00
CPC分类号： G11C8/18 , G11C29/023
摘要： A semiconductor memory system includes a memory controller and a memory. The memory controller includes a control signal converting unit converting a control signal into a converted control signal including n sequential clock pulses and a target clock pulse activated after a time period has elapsed from a start point of the n sequential clock pulses, and output the converted clock signal, and a controller transmitting unit converting the converted control signal into an optical signal, and transmitting the optical signal to the memory. The memory includes a memory receiving unit converting the optical signal into an electrical signal, and a control signal re-converting unit detecting the time period from the electrical signal, and converting the control signal into a control signal corresponding to the time period.
摘要翻译：半导体存储器系统包括存储器控制器和存储器。存储器控制器包括控制信号转换单元，其将控制信号转换为包括n个连续时钟脉冲的转换控制信号和在从n个连续时钟脉冲的起始点经过时间段之后激活的目标时钟脉冲，并且输出转换的时钟信号，以及将转换的控制信号转换为光信号的控制器发送单元，并将光信号发送到存储器。存储器包括将光信号转换成电信号的存储器接收单元和从电信号检测时间段的控制信号重新转换单元，并将控制信号转换成对应于该时间段的控制信号。

30. 发明授权

US07715458B2 Semiconductor optical devices, systems and methods of manufacturing the same 有权
标题翻译：半导体光学器件，系统及其制造方法
公开(公告)号：US07715458B2
公开(公告)日：2010-05-11
申请号：US11980424
申请日：2007-10-31
申请人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： H01S5/20 , H01L31/00 , H01L21/00
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/021 , H01S5/0218 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/124 , H01S5/2004 , H01S5/3434 , H01S5/4087
摘要： A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
摘要翻译：半导体光学器件包括硅衬底和III-V族III族半导体增益层。在硅衬底上形成III-V族半导体增益层。硅衬底或III-V族半导体增益层在其中形成色散的布拉格光栅。在制造半导体光学器件的方法中，在硅衬底上形成III-V族半导体增益层。在硅衬底或III-V族半导体增益层上形成分散布拉格光栅。

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