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    • 7. 发明申请
    • OPTICAL SERIALIZING/DESERIALIZING APPARATUS AND METHOD AND METHOD OF MANUFACTURING SAME
    • 光学串联/精制装置及其制造方法及方法
    • US20110206381A1
    • 2011-08-25
    • US12911417
    • 2010-10-25
    • Ho-Chul JiKyoung Won NaSung Dong SuhKyoung Ho HaSeong Gu KimDong Jae ShinIn Sung Joe
    • Ho-Chul JiKyoung Won NaSung Dong SuhKyoung Ho HaSeong Gu KimDong Jae ShinIn Sung Joe
    • H04B10/00
    • H04B10/801H04J14/08
    • An optical serializer/deserializer (SERDES) includes serializing circuitry which includes a source of a plurality of unmodulated optical signals, a modulation unit for generating a plurality of modulated optical signals using a plurality of electrical signals to modulate the plurality of unmodulated optical signals, and a coupling unit for delaying the plurality of modulated optical signs to generate a plurality of delayed modulated optical signals and combines the delayed modulated optical signals to generate a serialized modulated optical signal. Deserializing circuitry of the SERDES includes an optical splitter for splitting a serialized modulated optical signal into a plurality of modulated split optical signals, a demodulation unit for demodulating the modulated split optical signals and generating a respective plurality of demodulated split optical signals, and a delay unit for delaying each of the plurality of demodulated split optical signals by a respective delay amount such that the serialized modulated optical signal is converted into a respective plurality of parallel demodulated split optical signals.
    • 光串行器/解串器(SERDES)包括串行化电路,其包括多个未调制的光信号的源,调制单元,用于使用多个电信号产生多个调制的光信号,以调制多个未调制的光信号;以及 耦合单元,用于延迟所述多个调制的光学符号以产生多个延迟调制的光信号,并组合所述经延迟的经调制的光信号以产生串行调制的光信号。 SERDES的反序列化电路包括用于将串行调制的光信号分解为多个调制的分离的光信号的光分路器,用于解调调制的分离的光信号并产生相应的多个解调的分离光信号的解调单元,以及延迟单元 用于将所述多个解调的分离光信号中的每一个延迟各自的延迟量,使得所述串行调制的光信号被转换成相应的多个并行解调的分离光信号。
    • 9. 发明授权
    • Semiconductor laser diode with current restricting layer and fabrication method thereof
    • 具有限流层的半导体激光二极管及其制造方法
    • US07785911B2
    • 2010-08-31
    • US11580093
    • 2006-10-13
    • Joon-seop KwakKyoung-ho HaYoon-joon Sung
    • Joon-seop KwakKyoung-ho HaYoon-joon Sung
    • H01L21/86
    • H01S5/22H01S5/2063H01S5/32341
    • Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
    • 提供一种具有电流限制层的半导体激光二极管及其制造方法。 半导体激光二极管包括衬底,沉积在衬底上的第一材料层,沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层 从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层,以便限制注入有源层的电流。 因此,可以制造具有低共振临界电流值的改进的半导体激光二极管,其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度,同时保持脊部的宽度 。