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21. 发明授权

US08545627B2 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications 失效
标题翻译：锆和硼化铪合金模板在硅上用于氮化物集成应用
公开(公告)号：US08545627B2
公开(公告)日：2013-10-01
申请号：US13085115
申请日：2011-04-12
申请人： John Kouvetakis , Radek Roucka
发明人： John Kouvetakis , Radek Roucka
IPC分类号： H01L21/02 , C04B35/58 , C30B25/00
CPC分类号： H01L29/24 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
摘要翻译：提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。

22. 发明申请

US20130032857A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20130032857A1
公开(公告)日：2013-02-07
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/04 , C07F7/08 , H01B1/06 , H01L29/24 , H01L21/205
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

23. 发明授权

US08216537B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08216537B2
公开(公告)日：2012-07-10
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

24. 发明授权

US08133802B2 Silicon-germanium hydrides and methods for making and using same 有权
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08133802B2
公开(公告)日：2012-03-13
申请号：US12093256
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter, III
发明人： John Kouvetakis , Cole J. Ritter, III
IPC分类号： H01L21/205 , C01B25/00 , C01B33/00
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10T428/261 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
摘要翻译：本发明提供硅锗化合物，其合成方法，其沉积方法和使用该化合物制备的半导体结构。化合物由下式定义：SiHnI（GeHn2）y，其中y为2,3或4，其中n1为0,1,2或3以满足价态，并且其中n2对于每个Ge原子独立地为0,1,2或3 在化合物中，以满足化合价。

25. 发明申请

US20110316043A1 Thin Group IV Semiconductor Structures 审中-公开
标题翻译：薄IV族半导体结构
公开(公告)号：US20110316043A1
公开(公告)日：2011-12-29
申请号：US13062022
申请日：2009-09-16
申请人： John Kouvetakis , Jose Menendez
发明人： John Kouvetakis , Jose Menendez
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262
摘要： Thin group IV semiconductor structures are provided comprising a thin Si substrate and a second region formed directly on the Si substrate, where the second region comprises either (i) a Ge1-xSnx layer; or (ii) a Ge layer having a threading dislocation density of less than about 105/cm2, and the effective bandgap of the second region is less than the effective bandgap of the Si substrate. Further, methods for preparing the thin group IV semiconductor structures are provided. Such structures are useful, for example, as components of solar cells.
摘要翻译：提供了薄IV族半导体结构，其包括薄Si衬底和直接形成在Si衬底上的第二区域，其中第二区域包括（i）Ge1-xSnx层; 或（ii）穿透位错密度小于约105 / cm2的Ge层，并且第二区域的有效带隙小于Si衬底的有效带隙。此外，提供了制备薄IV族半导体结构的方法。这样的结构例如作为太阳能电池的组件是有用的。

26. 发明申请

US20110045646A1 SELECTIVE DEPOSITION OF SIGE LAYERS FROM SINGLE SOURCE OF SI-GE HYDRIDES 审中-公开
标题翻译：从SI-GE HYDRIDES的单一来源选择性沉积信号层
公开(公告)号：US20110045646A1
公开(公告)日：2011-02-24
申请号：US12866945
申请日：2009-03-27
申请人： John Kouvetakis , Yan-Yan Fang
发明人： John Kouvetakis , Yan-Yan Fang
IPC分类号： H01L21/20 , H01L21/336
CPC分类号： H01L21/0262 , C23C16/04 , C23C16/30 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02631 , H01L21/02636 , H01L21/02642
摘要： Single-source silyl-germanes hydrides can be used to deposit Gei_xSix seamlessly, conformally and selectively in the “source/drain” regions of prototypical transistors, leading to potentially significant performance gains derived from mobility enhancement, and applications in optoelectronics. Low-temperature heteroepitaxy (300-430° C.) produces monocrystalline microstructures, smooth and continuous surface morphologies and low defect densities. Strain engineering can be achieved by incorporating the entire SiGe content of precursors into the film.
摘要翻译：可以使用单源甲硅烷基锗烷氢化物在原型晶体管的“源极/漏极”区域中无缝地，保形地和选择性地沉积Gei_xSix，从而导致来自移动性增强的潜在的显着性能增益以及光电子学中的应用。低温异质外延（300-430°C）产生单晶微结构，光滑连续的表面形貌和低缺陷密度。应变工程可以通过将前体的整个SiGe含量纳入薄膜来实现。

27. 发明申请

US20100012972A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20100012972A1
公开(公告)日：2010-01-21
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： H01L29/165 , C01B33/00 , C30B25/02 , H01B1/06 , H01L21/20
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

28. 发明授权

US07598513B2 SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn 失效
标题翻译： SixSnyGe1-x-y和基于Si，Ge和Sn的相关合金异质结构
公开(公告)号：US07598513B2
公开(公告)日：2009-10-06
申请号：US10559979
申请日：2004-06-14
申请人： John Kouvetakis , Matthew Bauer , John Tolle
发明人： John Kouvetakis , Matthew Bauer , John Tolle
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0259 , H01L21/0262 , H01L29/161 , H01L29/165 , Y02E10/547 , Y10S148/169 , Y10S438/936
摘要： A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.
摘要翻译：在Si-Ge-Sn系统中合成器件质量合金和有序相的新方法使用特高压CVD法和SnD4与SiH3GeH3的反应。使用该方法，通过Ge1-xSnx缓冲层在Si上生长单相SixSnyGe1-xy半导体（x <= 0.25，y <= 0.11）。Ge1-xSnx缓冲层促进SixSnyGe1-xy膜的异质外延生长，并作为可以在结构上符合并吸收由更刚性的Si和Si-Ge-Sn材料施加的微分应变。使用提供高纯度半导体级材料的新的高产率方法制备SiH 3 GeH 3物质。

29. 发明申请

US20080113186A1 Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates 有权
标题翻译：在基板上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US20080113186A1
公开(公告)日：2008-05-15
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
IPC分类号： H01L21/20 , C30B25/02 , B32B33/00 , C01B33/06
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film. The grown materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels.
摘要翻译：提供了一种用于在具有富锗含量（Ge> 50at。％）和精确化学计量的Si（100）上生长Si-Ge材料的方法，SiGe，SiGe 2 Si，SiGe 3， SUB＆gt;和SiGe 4。具有源自化合物族（H 3 3 Ge）的直接Si-Ge键的新型氢化物x Si x 4 x x（x = 1- 4）用于在约300-450℃之间的前所未有的低温下生长具有低缺陷密度的均匀的，中继的和高度平坦的膜，完全避免了厚的成分梯度缓冲层和剥离技术的需要。在约500-700℃下，以较小的分布，无缺陷的微结构和原子水平的高均匀元素含量生长SiGe x X量子点。该方法通过将气态前体的整个Si / Ge骨架结合到膜中来提供形态，组成，结构和应变的精确控制。生长的材料具有在高频电子和光学系统中的应用所需的形态和微结构特征，以及用于基于高迁移率Si和Ge通道开发商业设备的模板和缓冲层。

30. 发明授权

US06897471B1 Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon 失效
标题翻译：应变工程直通Ge / SnxGe1-x异质二极管和多量子阱光电探测器，在SnySizGe1-y-z缓冲硅上生长的激光器，发射器和调制器
公开(公告)号：US06897471B1
公开(公告)日：2005-05-24
申请号：US10722611
申请日：2003-11-28
申请人： Richard A. Soref , Jose Menendez , John Kouvetakis
发明人： Richard A. Soref , Jose Menendez , John Kouvetakis
IPC分类号： H01L31/0328
CPC分类号： H01L31/035254 , B82Y20/00 , H01L29/155 , H01L31/105 , H01L33/12 , H01L33/34 , H01S5/3427
摘要： This invention teaches two new families of Si-based Ge/SnxGe1-x heterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnySizGe1-y-z buffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge/SnxGe1-x MQW by selecting the VS lattice parameter to be approx midway between the layer lattices.
摘要翻译：本发明教导了两个新的基于Si的Ge / Sn x Ge 1-x N异质二极管和多量子阱（MQW）光子器件的新族：（1）带 - 波段光电探测器，激光器，发射器，放大器和调制器，用于1.5至12 mum波长范围; （2）子带间光电检测器，激光器，发射器和调制器，用于12至100个操作。双极性带对频带器件具有1.5-2.2,3-5和8到12个母带的应用。单极子带组具有长波红外和太赫兹应用。所有的应变层器件都生长在一个松弛的Sn>> Ge 1 1> buffer buffer layer upon upon upon upon upon upon upon upon upon upon upon upon upon upon 通过独特的LT UHV-CVD的硅晶片。 VS提供了用于随后的异质外延的低缺陷原子模板，并且是用于通过以下方式在Ge / Sn x Ge 1-x MQW内设计拉伸和压缩应变的必需的使能技术：选择VS晶格参数在层格之间大约中间。

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