专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06897471B1 Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon 失效
标题翻译：应变工程直通Ge / SnxGe1-x异质二极管和多量子阱光电探测器，在SnySizGe1-y-z缓冲硅上生长的激光器，发射器和调制器
公开(公告)号：US06897471B1
公开(公告)日：2005-05-24
申请号：US10722611
申请日：2003-11-28
申请人： Richard A. Soref , Jose Menendez , John Kouvetakis
发明人： Richard A. Soref , Jose Menendez , John Kouvetakis
IPC分类号： H01L31/0328
CPC分类号： H01L31/035254 , B82Y20/00 , H01L29/155 , H01L31/105 , H01L33/12 , H01L33/34 , H01S5/3427
摘要： This invention teaches two new families of Si-based Ge/SnxGe1-x heterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnySizGe1-y-z buffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge/SnxGe1-x MQW by selecting the VS lattice parameter to be approx midway between the layer lattices.
摘要翻译：本发明教导了两个新的基于Si的Ge / Sn x Ge 1-x N异质二极管和多量子阱（MQW）光子器件的新族：（1）带 - 波段光电探测器，激光器，发射器，放大器和调制器，用于1.5至12 mum波长范围; （2）子带间光电检测器，激光器，发射器和调制器，用于12至100个操作。双极性带对频带器件具有1.5-2.2,3-5和8到12个母带的应用。单极子带组具有长波红外和太赫兹应用。所有的应变层器件都生长在一个松弛的Sn>> Ge 1 1> buffer buffer layer upon upon upon upon upon upon upon upon upon upon upon upon upon upon 通过独特的LT UHV-CVD的硅晶片。 VS提供了用于随后的异质外延的低缺陷原子模板，并且是用于通过以下方式在Ge / Sn x Ge 1-x MQW内设计拉伸和压缩应变的必需的使能技术：选择VS晶格参数在层格之间大约中间。

2. 发明授权

US07391801B1 Electrically pumped Group IV semiconductor micro-ring laser 有权
标题翻译：电泵IV组半导体微环激光器
公开(公告)号：US07391801B1
公开(公告)日：2008-06-24
申请号：US11286010
申请日：2005-11-25
申请人： Richard A. Soref , Stephen J. Emelett
发明人： Richard A. Soref , Stephen J. Emelett
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/1071 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/1032 , H01S5/2231 , H01S5/3223 , H01S5/3224
摘要： An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A resonator layer is disposed on the optical coupling layer and may be adapted to include a photonic crystal lattice having a plurality of substantially cylindrical pores extending downwardly into the resonator layer. An insulating cap layer may be disposed on the resonator layer which operatives to seal the photonic crystal lattice. A first plug filled vias is formed on a central region of the cap layer, which extends downwardly to permit a bottom portion of the first plug to communicate with the photonic crystal lattice. Further, a second plug filled vias is formed on an edge region of the cap layer and extends downwardly to permit a bottom portion of the second plug to communicate with the photonic crystal lattice.
摘要翻译：提供电泵浦的半导体激光器，其包括设置在基板上的波导结构。光耦合层设置在基板和波导上。谐振器层设置在光学耦合层上，并且可以适于包括具有向下延伸到谐振器层中的多个基本圆柱形孔的光子晶格。绝缘盖层可以设置在谐振器层上，操作者可以密封光子晶格。在盖层的中心区域上形成第一插塞填充的通孔，其向下延伸以允许第一插头的底部与光子晶格格栅连通。此外，第二插头填充的通孔形成在盖层的边缘区域上并且向下延伸以允许第二插头的底部与光子晶格连接。

3. 发明授权

US06195187B1 Wavelength-division multiplexed M×N×M cross-connect switch using active microring resonators 失效
标题翻译：使用有源微环谐振器的波分复用MxNxM交叉连接开关
公开(公告)号：US06195187B1
公开(公告)日：2001-02-27
申请号：US09111004
申请日：1998-07-07
申请人： Richard A. Soref , Brent E. Little
发明人： Richard A. Soref , Brent E. Little
IPC分类号： H04J1400
CPC分类号： G02B6/2938 , G02B6/12007 , G02B6/29343 , G02B6/29395 , G02F1/3133 , G02F2203/15 , H04Q11/0005 , H04Q2011/0016 , H04Q2011/0035 , H04Q2011/0049 , H04Q2011/005 , H04Q2011/0058 , H04Q2011/0073
摘要： Large-scale switching array architectures for multiwavelength routing employ absorption-switched micro-ring resonator 2×2 switches at all optical cross-points of each of a plurality of series-connected waveguide crossbar matrix switches. The architecture eliminates detrimental waveguide crossovers. Two or four coupled micro-rings made from layered III-V or II-VI hetrostructure material can aid in maintaining cross-talk at very low levels while employing simple switch addressing methods.
摘要翻译：用于多波长路由的大规模开关阵列结构在多个串联连接的波导交叉矩阵开关中的每一个的所有光学交叉点处采用吸收开关微环形谐振器2x2开关。该架构消除了有害的波导交叉。由层状III-V或II-VI结构材料制成的两个或四个耦合的微环可以在采用简单的开关寻址方法的情况下帮助将串扰保持在非常低的水平。

4. 发明授权

US5163118A Lattice mismatched hetrostructure optical waveguide 失效
标题翻译：晶格不匹配的谐振结构光波导
公开(公告)号：US5163118A
公开(公告)日：1992-11-10
申请号：US237244
申请日：1988-08-26
申请人： Joseph P. Lorenzo , Richard A. Soref
发明人： Joseph P. Lorenzo , Richard A. Soref
IPC分类号： G02B6/12 , G02B6/122 , G02B6/136
CPC分类号： G02B6/122 , G02B6/136 , G02B2006/12061 , G02B2006/12169 , Y10S117/902 , Y10S117/918 , Y10S148/026 , Y10S148/072 , Y10S148/149 , Y10S148/152 , Y10S438/933 , Y10S438/958
摘要： The invention comprises processes and heterostructure products defining silicon on insulator waveguides (80, 88, 90, 106, 112, 120, 122) that are suitable for use with light in the 1.3, 1.6 .mu.m or greater wavelengths. Silicon is deposited on an insulator layer 12 on a crystalline substrate 10 and grown or regrown in crystalline form. The silicon is then etched or formed into a waveguide structures.
摘要翻译：本发明包括限定硅绝缘子波导（80,88,90,106,112,120,122）的方法和异质结构产品，其适用于1.3,1.6μm或更大波长的光。硅沉积在晶体衬底10上的绝缘体层12上，并以晶体形式生长或再生长。然后将硅蚀刻或形成为波导结构。

5. 发明授权

US4958898A Silicon double-injection electro-optic modulator with insulated-gate and method of using same 失效
标题翻译：具有绝缘栅的硅双注入电光调制器及其使用方法
公开(公告)号：US4958898A
公开(公告)日：1990-09-25
申请号：US323738
申请日：1989-03-15
申请人： Lionel Friedman , Richard A. Soref
发明人： Lionel Friedman , Richard A. Soref
IPC分类号： G02F1/015 , G02F1/025 , G02F1/21 , G02F1/313
CPC分类号： G02F1/3138 , G02F1/025 , G02F1/3133 , G02F2001/0152 , G02F2001/212 , G02F2202/105
摘要： A double-injection transistor structure with an MOS gate is utilized as a guided-wave electro-optic phase modulator at infrared wavelengths in a silicon-on-insulator (SOI) waveguide. Cathode, gate and anode regions are integrated in the waveguide, longitudinally. The effective phase modulation is given by the voltage-variable overlap of the guided-mode optical field with carrier-induced local changes in the silicon refractive index. An electron-hole plasma is injected under the gate by cathode and anode. Using depletion-layer widening, the plasma channel width and mode overlap are controlled very rapidly by one or two low-power gate electrodes.
摘要翻译：具有MOS栅极的双注入晶体管结构被用作在绝缘体上硅（SOI）波导中的红外波长处的导波电光相位调制器。阴极，栅极和阳极区域纵向集成在波导中。有效相位调制由导模光场的电压可变重叠与硅折射率的载流子引起的局部变化给出。阴极和阳极在栅极下方注入电子空穴等离子体。使用耗尽层加宽，通过一个或两个低功率栅电极非常快速地控制等离子体沟道宽度和模式重叠。

6. 发明授权

US4728167A Electrically controlled integrated optical switch 失效
标题翻译：电控集成光开关
公开(公告)号：US4728167A
公开(公告)日：1988-03-01
申请号：US831895
申请日：1986-02-24
申请人： Richard A. Soref , Joseph P. Lorenzo
发明人： Richard A. Soref , Joseph P. Lorenzo
IPC分类号： G02F1/015 , G02F1/025 , G02F1/313 , G02B6/10
CPC分类号： G02F1/025 , G02F1/3138 , G02F2001/0152 , G02F2001/0153 , G02F2202/105
摘要： An electrically controlled integrated optical switch having a body made up entirely of crystalline silicon. More specifically, the body has a pair of channel waveguides intersecting in an X-like configuration forming therein an intersection crossover region. A first electrode is positioned on the intersection crossover region and a second electrode is positioned on the bottom of the body opposite the intersection crossover region. A controllable current/voltage source is electrically connected to the electrodes in order to alter the index of refraction of the intersection crossover region in order to change the amount of optical cross coupling of light between the intersecting waveguides.
摘要翻译：一种电控集成光开关，其具有完全由晶体硅构成的主体。更具体地，主体具有在X形构造中相交的一对沟道波导，其中形成交叉交叉区域。第一电极位于交叉交叉区域上，并且第二电极位于与交叉点交叉区域相对的主体的底部。可控电流/电压源电连接到电极，以便改变交叉交叉区域的折射率，以便改变相交波导之间的光的交叉耦合的量。

7. 发明授权

US4714314A Mode dependent, optical time delay system for electrical signals 失效
标题翻译：模式相关，电信号光时延系统
公开(公告)号：US4714314A
公开(公告)日：1987-12-22
申请号：US698721
申请日：1985-02-06
申请人： Andrew C. Yang , Richard Payne , Richard A. Soref
发明人： Andrew C. Yang , Richard Payne , Richard A. Soref
IPC分类号： G02B6/14 , H04B10/2581 , G02B6/36
CPC分类号： H04B10/2581 , G02B6/14 , Y10S372/70
摘要： A mode dependent, optical time delay system for electrical signals having a highly multi-mode optical fiber having a step index profile in optical alignment with an optical source which is capable of converting an incoming electrical signal into an optical signal. By incorporating within the system a number of different components to alter or control the mode angles of the incoming optical signal, the resultant optical output signal is time delayed as it propagates through the optical fiber. This optical output signal is thereafter converted into an electrical output signal which is also time delayed in direct relation to the mode angle of the optical signal propagating through the optical fiber.
摘要翻译：一种模式相关的光学时间延迟系统，用于具有高度多模光纤的电信号，其具有与能够将输入的电信号转换为光信号的光源对准的阶跃折射率分布。通过在系统内并入多个不同的组件来改变或控制输入光信号的模式角，所产生的光输出信号在其通过光纤传播时被延时。该光输出信号此后转换为与通过光纤传播的光信号的模式角直接相关的时间延迟的电输出信号。

8. 发明授权

US06621841B1 Phonon-pumped semiconductor lasers 失效
标题翻译：声子泵浦半导体激光器
公开(公告)号：US06621841B1
公开(公告)日：2003-09-16
申请号：US10132328
申请日：2002-04-23
申请人： Richard A. Soref , Gregory Sun
发明人： Richard A. Soref , Gregory Sun
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S1/00 , H01S5/04 , H01S5/0612 , H01S5/3022 , H01S5/3401 , H01S5/3402 , H01S5/3425
摘要： The first phonon-pumped semiconductor laser. The active region is an unbiased boron-doped Si0.94Ge0.06/Si superlattice with Si0.97Ge0.03 buffer layers embedded in a surface-plasmon strip waveguide. Warm and cool heat sinks create a temperature gradient across the waveguide. A heat buffer layer adjacent to the cool sink reflects optical phonons and transmits acoustic phonons. Within the resonator, the difference in effective temperatures of optical and acoustic phonons provides hole pumping for the lasing transition between the heavy-hole 2 (HH2) and heavy-hole 1(HH1) minibands. A gain of 280/cm at the 5THz emission frequency is predicted for 6×1017/cm3 doping at temperatures of 300K and 77K for optical and acoustic phonons, respectively.
摘要翻译：第一个声子泵浦半导体激光器。有源区是一个无偏硼掺杂的Si0.94Ge0.06 / Si超晶格，Si0.97Ge0.03缓冲层埋在表面等离子体激元条波导中。温暖和凉爽的散热器在波导上产生温度梯度。与冷却水槽相邻的热缓冲层反射光学声子并传输声学声子。在谐振器内，光学和声学声子的有效温度差异为重孔2（HH2）和重孔1（HH1）迷你型之间的激光过渡提供了空穴泵浦。在5THz发射频率下，对于光学和声学声子，在300K和77K的温度下分别预测6×10 17 / cm 3的掺杂增益为280 / cm。

9. 发明授权

US6154475A Silicon-based strain-symmetrized GE-SI quantum lasers 失效
标题翻译：基于硅的应变对称化GE-SI量子激光器
公开(公告)号：US6154475A
公开(公告)日：2000-11-28
申请号：US984857
申请日：1997-12-04
申请人： Richard A. Soref , Lionel R. Friedman
发明人： Richard A. Soref , Lionel R. Friedman
IPC分类号： H01L29/15 , H01S5/34 , H01S3/19 , H01L29/06
CPC分类号： H01S5/32 , B82Y20/00 , H01L29/155 , H01S5/34 , H01S5/3402 , H01S2301/173 , H01S5/3403 , H01S5/342 , H01S5/3427
摘要： A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed buffer layer in turn grown on the Si wafer, and an intrinsic strain-symmetric Ge--Si superlattice covered by a heavily doped stably strained SiGe emitter. The superlattice has numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.
摘要翻译：提供一系列激光器，其可以容易地在硅晶片平台上生长，每个激光器具有形成在SiGe分级弛豫缓冲层上的高掺杂稳定应变SiGe或Ge集电极层，然后在Si晶片上生长，对称Ge-Si超晶格被重掺杂稳定应变的SiGe发射极覆盖。超晶格具有许多薄的8-15个原子单层的交错Ge和Si原子，能够实现高堆叠高度。

10. 发明授权

US5004447A Low loss semiconductor directional coupler switches including gain method of switching light using same 失效
标题翻译：低损耗半导体定向耦合器开关包括使用相同的开关灯的增益方法
公开(公告)号：US5004447A
公开(公告)日：1991-04-02
申请号：US403636
申请日：1989-09-06
申请人： Richard A. Soref
发明人： Richard A. Soref
IPC分类号： G02F1/313 , H01S5/062 , H01S5/10
CPC分类号： H01S5/1032 , G02F1/3133 , H01S5/06213 , H01S5/10
摘要： In multiple quantum well directional couplers, non-centralized input and output legs, occupying major portions of the switches, are continuously forward biased, to produce sufficient gain in light intensity therein to overcome losses in the centralized portions, to in turn provide a transparent (ODB loss) two-by-two coupler switch. Short segments of the centralized coupling portion occupying minor portions of the switches, are switched between forward bias states and zero bias states to provide light beam switching. Thus these switches employ both carrier gain and carrier refraction. The large changes in the index of refraction enable extremely short, low loss, switches to be fabricated and cascaded if desired. A second group of less preferred switches employ solely the carrier refraction effect, by injecting carriers into the waveguides at high levels, preferably equal to or greater than 1.times.10.sup.18 /cm.sup.3.
摘要翻译：在多个量子阱定向耦合器中，占用开关主要部分的非集中输入和输出支路被连续正向偏置，以在其中产生足够的光强增益，以克服集中部分中的损耗，从而提供透明（ ODB损耗）二位二联合开关。占用开关的小部分的集中耦合部分的短段在正向偏置状态和零偏置状态之间切换以提供光束切换。因此，这些开关采用载波增益和载波折射。如果需要，折射率的大的变化使得极短，低损耗，开关被制造和级联。第二组较不优选的开关仅采用载流子折射效应，通过将载流子以高水平注入到波导中，优选等于或大于1×10 18 / cm 3。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式