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21. 发明申请

US20110084322A1 CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20110084322A1
公开(公告)日：2011-04-14
申请号：US12899473
申请日：2010-10-06
申请人： Jin Yeong KANG
发明人： Jin Yeong KANG
IPC分类号： H01L31/10 , H01L31/0312 , H01L31/18
CPC分类号： H01L27/14645 , H01L27/1461 , H01L27/14614 , H01L27/14689
摘要： Disclosed is a CMOS image sensor and a manufacturing method thereof. According to an aspect of the present invention, each pixel of CMOS image sensor includes a photo detector that includes an electon Collection layer doped with a concentration of 5×1015/cm3 to 2×1016/cm3; and a transfer transistor that is connected to the photo detector and is formed of a vertical type trench gate of which the equivalent oxide thickness is 120 Å or more.
摘要翻译：公开了CMOS图像传感器及其制造方法。根据本发明的一个方面，CMOS图像传感器的每个像素包括光电检测器，其包括以5×10 15 / cm 3至2×10 16 / cm 3的浓度掺杂的电子收集层; 以及连接到光检测器并由等效氧化物厚度为120以上的垂直型沟槽栅极形成的转移晶体管。

22. 发明授权

US07902577B2 Image sensor having heterojunction bipolar transistor and method of fabricating the same 有权
标题翻译：具有异质结双极晶体管的图像传感器及其制造方法
公开(公告)号：US07902577B2
公开(公告)日：2011-03-08
申请号：US11872308
申请日：2007-10-15
申请人： Jin Yeong Kang , Sang Heung Lee , Jin Gun Koo
发明人： Jin Yeong Kang , Sang Heung Lee , Jin Gun Koo
IPC分类号： H01L31/11
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14681
摘要： Provided is an image sensor having a heterojunction bipolar transistor (HBT) and a method of fabricating the same. The image sensor is fabricated by SiGe BiCMOS technology. In the image sensor, a PD employs a floating-base-type SiGe HBT. A floating base of the SiGe HBT produces a positive voltage with respect to a collector during an exposure process, and the HBT performs a reverse bipolar operation due to the positive voltage so that the collector and an emitter exchange functions. The SiGe HBT can sense an optical current signal and also amplify the optical current signal. The image sensor requires only three transistors in a pixel so that the degree of integration can increase. The image sensor has an improved sensitivity of signals in the short wavelength region and a sensing signal has excellent linearity such that both a sensing mechanism and control circuit are very simple.
摘要翻译：提供了具有异质结双极晶体管（HBT）的图像传感器及其制造方法。图像传感器由SiGe BiCMOS技术制造。在图像传感器中，PD采用浮动型SiGe HBT。 SiGe HBT的浮动基极在曝光过程中产生相对于集电极的正电压，HBT由于正电压而执行反向双极性操作，从而集电极和发射极交换功能起作用。 SiGe HBT可以感测光电流信号，并且还可以放大光电流信号。图像传感器在像素中仅需要三个晶体管，使得集成度可以增加。图像传感器在短波长区域具有改善的信号灵敏度，并且感测信号具有优异的线性度，使得感测机构和控制电路都非常简单。

23. 发明申请

US20090321641A1 BIPOLAR JUNCTION TRANSISTOR-BASED UNCOOLED INFRARED SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：基于双极性晶体管的不连续红外传感器及其制造方法
公开(公告)号：US20090321641A1
公开(公告)日：2009-12-31
申请号：US12111830
申请日：2008-04-29
申请人： Kun Sik PARK , Yong Sun YOON , Bo Woo KIM , Jin Yeong KANG , Jong Moon PARK , Seong Wook YOO
发明人： Kun Sik PARK , Yong Sun YOON , Bo Woo KIM , Jin Yeong KANG , Jong Moon PARK , Seong Wook YOO
IPC分类号： H01L31/024 , H01L31/18 , H01L31/09
CPC分类号： G01J5/20 , H01L21/762 , H01L27/1203
摘要： A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.
摘要翻译：提供了一种基于BJT（双极结型晶体管）的非制冷IR传感器及其制造方法。基于BJT的非制冷红外传感器包括：基板; 至少一个BJT，其形成为与衬底分开浮动; 以及形成在所述至少一个BJT的上表面上的吸热层，其中所述BJT根据通过所述吸热层吸收的热量来改变输出值。因此，可以提供能够通过CMOS兼容工艺实现的BJT系非冷却IR传感器，并获得更优异的温度变化检测特性。

24. 发明授权

US07534680B2 Bipolar transistor, BiCMOS device, and method for fabricating thereof 有权
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US07534680B2
公开(公告)日：2009-05-19
申请号：US11797071
申请日：2007-04-30
申请人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
发明人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/0623 , H01L27/1203 , H01L29/7371 , H01L29/78
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

25. 发明授权

US07170355B2 Voltage-controlled oscillator using current feedback network 有权
标题翻译：使用电流反馈网络的压控振荡器
公开(公告)号：US07170355B2
公开(公告)日：2007-01-30
申请号：US10957749
申请日：2004-10-05
申请人： Ja Yol Lee , Sang Heung Lee , Jin Yeong Kang , Seung Hyeub Oh
发明人： Ja Yol Lee , Sang Heung Lee , Jin Yeong Kang , Seung Hyeub Oh
IPC分类号： H03B1/00
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1221 , H03B5/1243
摘要： Provided is a voltage-controlled oscillator (VCO) using a current feedback network for use in a wireless communication terminal. The voltage-controlled oscillator has high input impedance and low output impedance, so that a degree of isolation from the external load is excellent, thereby preventing degradation of the Q-factor by the load in overall oscillation circuit. In the voltage-controlled oscillator of the present invention, an LC resonator is provided to generate positive feedback, and negative resistance may be obtained at a wider frequency range by tuning a varactor of the LC resonator. And a boosting inductor is inserted into the positive feedback loop to have a greater negative resistance, therefore it is possible to prevent a problem in which the oscillation does not occur due to the parasitic resistance components generated during circuit fabrication.
摘要翻译：提供了一种使用电流反馈网络在无线通信终端中使用的压控振荡器（VCO）。压控振荡器具有高输入阻抗和低输出阻抗，使得与外部负载的隔离度优异，从而防止整个振荡电路中的负载对Q因子的劣化。在本发明的压控振荡器中，设置LC谐振器以产生正反馈，并且通过调谐LC谐振器的变容二极管可以在更宽的频率范围内获得负电阻。并且将增压电感器插入到正反馈回路中以具有更大的负电阻，因此可以防止由于在电路制造期间产生的寄生电阻分量而不发生振荡的问题。

26. 发明申请

US20050139862A1 Self-aligned heterojunction bipolar transistor and manufacturing method thereof 审中-公开
标题翻译：自对准异质结双极晶体管及其制造方法
公开(公告)号：US20050139862A1
公开(公告)日：2005-06-30
申请号：US10677665
申请日：2003-10-01
申请人： Chan Park , Seung-Yun Lee , Shanghoon Kim , Jin-Yeong Kang
发明人： Chan Park , Seung-Yun Lee , Shanghoon Kim , Jin-Yeong Kang
IPC分类号： H01L21/331 , H01L29/08 , H01L29/737 , H01L29/739 , H01L31/0328 , H01L31/072
CPC分类号： H01L29/66242 , H01L29/0821 , H01L29/7378
摘要： Provided are a self-aligned heterojunction bipolar transistor that can prevent electrical short-circuit caused by the agglomeration during the formation of a silicide electrode, minimize resistance by forming thick base electrodes, minimize the parasitic resistance of the base and parasitic capacitance between the base and the collector, and thus improve the process stability and economical efficiency by ruling out a wet-etching process and performing a selective thin film growing process once, and a manufacturing method thereof. The heterojunction bipolar transistor of this research includes: a collector and a collector electrode formed within a silicon substrate; base electrodes formed on the collector and including a protrusion having a first opening and a body having a second opening for exposing the surface of the collector; a base epitaxial layer grown selectively on the collector exposed thorough the first opening; sidewall spacers formed on the sidewalls of the second opening; an emitter electrode formed on the base epitaxial layer in the shape of an overhang that covers the sidewall spacers; and an insulation layer inserted between the overhang of the emitter electrode and the base electrodes and connected to the sidewall spacers.
摘要翻译：提供了一种自对准异质结双极晶体管，其可以防止在形成硅化物电极期间由聚集引起的电短路，通过形成厚的基极电极使电阻最小化，使基极的寄生电阻最小化，并且基极和并且因此通过排除湿式蚀刻工艺和执行选择性薄膜生长工艺一次来提高工艺稳定性和经济性及其制造方法。该研究的异质结双极晶体管包括：在硅衬底内形成的集电极和集电极; 基底电极形成在集电体上并且包括具有第一开口的突起和具有用于暴露集电体的表面的第二开口的主体; 在通过第一开口暴露的收集器上选择性地生长的基极外延层; 形成在第二开口的侧壁上的侧壁间隔物; 形成在所述基底外延层上的覆盖所述侧壁间隔物的突出形状的发射电极; 以及绝缘层，其插入在发射电极的伸出部和基极之间并与侧壁间隔件连接。

27. 发明授权

US06791105B2 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US06791105B2
公开(公告)日：2004-09-14
申请号：US10329269
申请日：2002-12-24
申请人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
发明人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
IPC分类号： H01L2906
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

28. 发明授权

US06469609B2 Method of fabricating silver inductor 有权
标题翻译：制造银电感的方法
公开(公告)号：US06469609B2
公开(公告)日：2002-10-22
申请号：US09733839
申请日：2000-12-07
申请人： Seung-Yun Lee , Jin-Yeong Kang
发明人： Seung-Yun Lee , Jin-Yeong Kang
IPC分类号： H01F500
CPC分类号： H01F41/041 , H01F5/003 , Y10T29/4902 , Y10T29/49071
摘要： The present invention relates to a method of fabricating an inductor capable of improving a quality factor and decreasing a series resistance by using as a material of the inductor silver smaller in a specific resistance than aluminum used conventionally. The method of fabricating an inductor according to the present invention includes the following steps. A first step is of forming a first metal layer on a first insulating layer, patterning said first metal layer, and forming a second insulating layer on the resultant structure. A second step is of patterning said second insulating layer to form a via hole and forming a plug in said via hole. A third step is of forming a third insulating layer on the resultant structure and patterning said third insulating layer to form a spiral groove. A fourth step is of forming a second metal layer in said spiral groove to form an inductor. And a fifth step is of forming a fourth insulating layer for protecting said inductor from a mechanical force or materials causing a chemical reaction.
摘要翻译：本发明涉及一种制造电感器的方法，该电感器通过使用电感器银的材料，其电阻比常规使用的铝的电阻率小，可以提高品质因数并降低串联电阻。根据本发明的制造电感器的方法包括以下步骤。第一步骤是在第一绝缘层上形成第一金属层，图案化所述第一金属层，并在所得结构上形成第二绝缘层。第二步是图案化所述第二绝缘层以形成通孔并在所述通孔中形成插头。第三步骤是在所得结构上形成第三绝缘层，并且图案化所述第三绝缘层以形成螺旋槽。第四步骤是在所述螺旋槽中形成第二金属层以形成电感器。并且第五步是形成用于保护所述电感器免受机械力或导致化学反应的材料的第四绝缘层。

29. 发明授权

US5389796A Vacuum transistor having an optical gate 失效
标题翻译：具有光栅的真空晶体管
公开(公告)号：US5389796A
公开(公告)日：1995-02-14
申请号：US171408
申请日：1993-12-22
申请人： Sung-Weon Kang , Jin-Yeong Kang
发明人： Sung-Weon Kang , Jin-Yeong Kang
IPC分类号： H01J21/06 , H01J1/34 , H01J9/12 , H01J17/06 , H01J19/24 , H01J21/04 , H01J40/16 , H01L21/331 , H01L31/12 , H01L29/06
CPC分类号： H01J1/34 , H01J17/066 , H01J21/04
摘要： A vacuum transistor having an optical gate in which an optical signal is radiated from the optical gate. The transistor has a silicon substrate; an insulating layer deposited on said silicon substrate, the insulating layer having a recess portion formed by an etching method; an optical source for radiating the optical signal and serving as said optical gate; and two electrodes formed on said insulating layer and separated from each other under a vacuum or an atmosphere. One of the electrodes receives the optical signal and is an electron emitting electrode for emitting electrons, and the other electrode is an electron collecting electrode for collecting the electrons emitted from said electron emitting electrode. The electron emitting electrode is formed beneath said optical source under a vacuum or an atmosphere and is connected to ground; and said electron collecting electrode is connected to a power source. The amount of current flowing in said electron collecting electrode may be adjusted by the intensity of the optical signal from said optical source. The mobility of electrons between the electron emitting electrode and the electron collecting electrode is further improved owing to a vacuum state or an atmosphere state of the electron transferring path.
摘要翻译：一种具有光栅的真空晶体管，其中光信号从光栅辐射。晶体管具有硅衬底; 沉积在所述硅衬底上的绝缘层，所述绝缘层具有通过蚀刻方法形成的凹部; 用于辐射光信号并用作所述光栅的光源; 以及形成在所述绝缘层上并在真空或大气中彼此分离的两个电极。一个电极接收光信号，并且是用于发射电子的电子发射电极，另一个电极是用于收集从所述电子发射电极发射的电子的电子收集电极。电子发射电极在真空或大气下在所述光源下面形成并连接到地面; 并且所述电子收集电极连接到电源。可以通过来自所述光源的光信号的强度来调节在所述电子收集电极中流动的电流量。由于电子传输路径的真空状态或气氛状态，电子发射电极和电子收集电极之间的电子迁移率进一步提高。

30. 发明授权

US08513655B2 Organic light emitting diode and manufacturing method thereof 有权
标题翻译：有机发光二极管及其制造方法
公开(公告)号：US08513655B2
公开(公告)日：2013-08-20
申请号：US12974708
申请日：2010-12-21
申请人： Lee Mi Do , Kun Sik Park , Ji Man Park , Dong Pyo Kim , Jin-Yeong Kang , Kyu Ha Baek
发明人： Lee Mi Do , Kun Sik Park , Ji Man Park , Dong Pyo Kim , Jin-Yeong Kang , Kyu Ha Baek
IPC分类号： H01J19/42
CPC分类号： H01L51/5212 , H01L51/5228
摘要： An organic light emitting diode (OLED) and a method for manufacturing the same are provided. In the OLED, patterned metal electrodes are positioned on one or more of upper and lower portions of a light emission layer to allow light generated from the light emission layer to emit to an area between the patterned metal electrodes.
摘要翻译：提供有机发光二极管（OLED）及其制造方法。在OLED中，图案化的金属电极位于发光层的上部和下部的一个或多个上，以允许从发光层产生的光发射到图案化的金属电极之间的区域。

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