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21. 发明授权

US07335541B2 Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other 有权
标题翻译：使用该掩模制造薄膜晶体管的方法，用于形成包括彼此偏离的狭缝图案的多晶硅
公开(公告)号：US07335541B2
公开(公告)日：2008-02-26
申请号：US10854664
申请日：2004-05-26
申请人： Myung-Koo Kang , Sook-Young Kang , Hyun-Jae Kim
发明人： Myung-Koo Kang , Sook-Young Kang , Hyun-Jae Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0268 , H01L21/2026 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.
摘要翻译：提供了一种用于将非晶硅结晶成多晶硅的掩模。掩模包括用于限定要被照明的区域的多个狭缝图案。沿着纵向第一方向形成多个狭缝图案，并且掩模沿纵向第二方向移动。第一纵向方向基本上垂直于第二纵向方向。每个分割图案与另一个分开的图案偏离大致相同的距离。因此，使用掩模的多晶硅生长成相对于水平和垂直方向各向同性。

22. 发明授权

US07223504B2 Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor 有权
标题翻译：结晶掩模，结晶方法和制造包括结晶半导体的薄膜晶体管的方法
公开(公告)号：US07223504B2
公开(公告)日：2007-05-29
申请号：US10993648
申请日：2004-11-19
申请人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
发明人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
IPC分类号： G03F1/00
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66757
摘要： A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.
摘要翻译：提供了一种用于将非晶硅转化为多晶硅的激光照明的结晶掩模，其包括：具有多个第一狭缝的多个透射区域，用于调节穿过掩模的激光照射的能量; 和不透明区域。

23. 发明申请

US20070108447A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管和液晶显示
公开(公告)号：US20070108447A1
公开(公告)日：2007-05-17
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L29/76 , H01L29/10 , H01L31/036 , H01L31/112
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

24. 发明申请

US20050258997A1 Analog buffer, display device having the same, and method of driving the same 有权
标题翻译：模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法
公开(公告)号：US20050258997A1
公开(公告)日：2005-11-24
申请号：US11122769
申请日：2005-05-05
申请人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
发明人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , H03F3/00 , H03F3/50 , H03F3/70 , H03K5/08 , H03K19/00 , H03M1/66
CPC分类号： G09G3/3688 , H03F3/005 , H03F3/505
摘要： An analog buffer, display device having the same and a method of drving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要翻译：提供了一种模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法。模拟缓冲器将模拟电压施加到负载。模拟缓冲器包括比较器和晶体管。比较器被配置为将从外部设备提供的输入电压与施加到负载的模拟电压进行比较。当模拟电压低于输入电压时，晶体管导通以对负载进行充电或导通，以在模拟电压高于输入电压时对负载进行放电，并且当模拟电压变得基本相同时，晶体管截止作为输入电压。

25. 发明授权

US06822703B2 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示器的多晶硅薄膜晶体管及其制造方法
公开(公告)号：US06822703B2
公开(公告)日：2004-11-23
申请号：US10128330
申请日：2002-04-24
申请人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
发明人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
IPC分类号： G02F1136
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136236 , H01L27/1214
摘要： A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.
摘要翻译：公开了一种用于LCD的多晶硅TFT及其制造方法。 TFT包括形成在基板上的有源图案，形成在包括有源图案的基板上的栅极绝缘层，形成在栅极绝缘层上以与有源图案交叉的栅极线，并且包括用于限定第一杂质的栅电极区域，第二杂质区域和沟道区域，在包括栅极线的栅极绝缘层上形成的绝缘夹层，形成在绝缘层间并通过第一接触孔连接到第二杂质区域的数据线，该第一接触孔通过栅绝缘层和第二杂质区上的绝缘中间层，以及形成在与数据线相同的绝缘夹层上的像素电极，并通过第二接触孔与第一杂质区连接，第二接触孔通过栅极绝缘层和绝缘中间层在第一杂质区域。掩模的数量可以减少到5张或6张，从而简化制造过程。

26. 发明授权

US08971224B2 Multi-carriers managing device and method and sleep mode operating method of terminal 有权
标题翻译：多载波管理设备和终端的方法和睡眠模式操作方法
公开(公告)号：US08971224B2
公开(公告)日：2015-03-03
申请号：US13126897
申请日：2009-10-30
申请人： Eunkyung Kim , Juhee Kim , Hyun-Jae Kim , Kyung Soo Kim
发明人： Eunkyung Kim , Juhee Kim , Hyun-Jae Kim , Kyung Soo Kim
IPC分类号： G08C17/00 , H04W4/00 , H04B1/38 , H04W52/02 , H04L5/02 , H04L27/26 , H04W36/24 , H04W72/04
CPC分类号： H04W52/0229 , H04L5/001 , H04L5/008 , H04L5/0098 , H04L5/02 , H04L27/2601 , H04W36/24 , H04W52/0206 , H04W52/0216 , H04W72/042 , H04W72/0453 , Y02D70/20
摘要： A multi-carriers management device of a communication system supporting multi-carriers requests a terminal attempting to enter a sleep window to change a primary carrier, and transmits a control message to the terminal through the changed primary carrier during the sleep window.
摘要翻译：支持多载波的通信系统的多载波管理装置请求尝试进入睡眠窗口的终端来改变主载波，并且在睡眠窗口期间通过改变的主载波向终端发送控制消息。

27. 发明授权

US08859331B2 Compositions used in formation of oxide material layers, methods of forming an oxide material layer using the same, and methods of fabricating a thin film transistor using same 有权
标题翻译：用于形成氧化物材料层的组合物，使用其形成氧化物材料层的方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US08859331B2
公开(公告)日：2014-10-14
申请号：US13523978
申请日：2012-06-15
申请人： Hyun Jae Kim , Dong Lim Kim , Joohye Jung , You Seung Rim
发明人： Hyun Jae Kim , Dong Lim Kim , Joohye Jung , You Seung Rim
IPC分类号： H01L21/00 , H01L21/16 , H01L21/02
CPC分类号： H01L21/08 , H01B1/08 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628
摘要： Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.
摘要翻译：提供形成氧化物层的方法。该方法包括将前体材料与过氧化物材料混合以形成前体溶液，将前体溶液涂覆在基材上，并烘烤涂覆的前体溶液。

28. 发明授权

US08718660B2 Apparatus for measuring radio environment of base station and method for measuring the same 有权
标题翻译：用于测量基站无线电环境的装置及其测量方法
公开(公告)号：US08718660B2
公开(公告)日：2014-05-06
申请号：US12906587
申请日：2010-10-18
申请人： Sung Cheol Chang , Hyun-Jae Kim , Won-Ik Kim , Sung Kyung Kim , Chul Sik Yoon , Jee Hwan Ahn
发明人： Sung Cheol Chang , Hyun-Jae Kim , Won-Ik Kim , Sung Kyung Kim , Chul Sik Yoon , Jee Hwan Ahn
IPC分类号： H04W72/00
CPC分类号： H04B17/336 , H04B17/318
摘要： A method and apparatus for measuring a radio environment of a base station is provided. The method includes respectively selecting one or more frames for measuring a radio environment in a first mode in which an Over-The-Air Receiver (OTAR) of the base station is initialized and a second mode in which the OTAR is active, continuously measuring the radio environment based on the selected one or more frames in the first mode and intermittently measuring the radio environment based on the selected one or more frames in the second mode.
摘要翻译：提供了一种用于测量基站的无线电环境的方法和装置。该方法包括：在初始化基站的空中接收机（OTAR）的第一模式中分别选择一个或多个用于测量无线电环境的帧，以及其中OTAR被激活的第二模式，连续地测量基于所述第一模式中所选择的一个或多个帧的无线电环境，并且基于所述第二模式中所选择的一个或多个帧来间歇地测量所述无线电环境。

29. 发明授权

US08536570B2 Composition for oxide thin film, preparation method of the composition, methods for forming the oxide thin film using the composition, and electronic device using the composition 有权
标题翻译：氧化物薄膜的组成，组合物的制备方法，使用该组合物形成氧化物薄膜的方法，以及使用该组合物的电子器件
公开(公告)号：US08536570B2
公开(公告)日：2013-09-17
申请号：US13341060
申请日：2011-12-30
申请人： Hyun Jae Kim , Woong Hee Jeong , Jung Hyeon Bae , Kyung Min Kim
发明人： Hyun Jae Kim , Woong Hee Jeong , Jung Hyeon Bae , Kyung Min Kim
IPC分类号： H01L29/10 , H01B1/02
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02628
摘要： Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound.
摘要翻译：提供了一种氧化物半导体的组合物，该组合物的制备方法，使用该组合物形成氧化物半导体薄膜的方法，以及使用该组合物形成电子器件的方法。用于氧化物半导体的组合物包括用于氧化物薄膜的化合物和用于调节氧化物薄膜的导电性的稳定剂。稳定剂的摩尔数大于化合物总摩尔数的2至12倍。

30. 发明申请

US20130059414A1 COMPOSITIONS USED IN FORMATION OF OXIDE MATERIAL LAYERS, METHODS OF FORMING AN OXIDE MATERIAL LAYER USING THE SAME, AND METHODS OF FABRICATING A THIN FILM TRANSISTOR USING SAME 有权
标题翻译：用于形成氧化物材料层的组合物，使用其形成氧化物材料层的方法，以及使用其制造薄膜晶体管的方法
公开(公告)号：US20130059414A1
公开(公告)日：2013-03-07
申请号：US13523978
申请日：2012-06-15
申请人： Hyun Jae KIM , Dong Lim KIM , Joohye JUNG , You Seung RIM
发明人： Hyun Jae KIM , Dong Lim KIM , Joohye JUNG , You Seung RIM
IPC分类号： H01L21/36 , H01B1/08
CPC分类号： H01L21/08 , H01B1/08 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628
摘要： Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.
摘要翻译：提供形成氧化物层的方法。该方法包括将前体材料与过氧化物材料混合以形成前体溶液，将前体溶液涂覆在基材上，并烘烤涂覆的前体溶液。

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