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21. 发明授权

US08203175B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08203175B2
公开(公告)日：2012-06-19
申请号：US12654657
申请日：2009-12-29
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L21/74 , H01L21/76895 , H01L21/823814 , H01L23/481 , H01L27/1203 , H01L27/228 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
摘要翻译：半导体器件包括：形成在衬底前表面的扩散层; 在扩散层的前表面形成低电阻部分以具有低于扩散层的电阻; 以及从基板的后表面穿过基板的后接触电极，以通过扩散层连接到低电阻部分。

22. 发明申请

US20120028920A1 DERIVATIVES OF 4-PIPERAZIN-1-YL-4-BENZO[B]THIOPHENE SUITABLE FOR THE TREATMENT OF CNS DISORDERS 失效
标题翻译：适用于治疗CNS病症的4-哌啶-1-基-4-苯并[b]噻吩的衍生物
公开(公告)号：US20120028920A1
公开(公告)日：2012-02-02
申请号：US13270544
申请日：2011-10-11
申请人： Hiroshi YAMASHITA , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
发明人： Hiroshi YAMASHITA , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
IPC分类号： A61K31/496 , C07D409/10 , C07D417/14 , C07D413/14 , A61K31/538 , A61K31/517 , A61K31/506 , A61K31/55 , A61K31/5415 , A61K31/553 , C07F7/18 , A61K31/695 , A61P25/18 , A61P25/24 , A61P25/00 , C07D409/14
CPC分类号： C07D409/12 , C07D333/54 , C07D407/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08 , C07D491/113
摘要： A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：由式（1）表示的杂环化合物或其盐：其中R 2表示氢原子或低级烷基; A表示低级亚烷基或低级亚烯基; R1表示芳基或杂环基。本发明的化合物具有广泛的精神障碍治疗范围，包括中枢神经系统疾病，无副作用和高安全性。

23. 发明申请

US20110152286A1 PIPERAZINE-SUBSTITUTED BENZOTHIOPHENES FOR TREATMENT OF MENTAL DISORDERS 有权
标题翻译：用于治疗精神疾病的哌嗪取代的苯二酚
公开(公告)号：US20110152286A1
公开(公告)日：2011-06-23
申请号：US12970690
申请日：2010-12-16
申请人： Hiroshi YAMASHITA , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
发明人： Hiroshi YAMASHITA , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
IPC分类号： A61K31/497 , C07D401/14 , A61P25/18 , A61P25/24 , A61P25/22 , A61P25/28 , A61P25/14 , A61P25/16
CPC分类号： A61K31/496 , C07D405/12 , C07D409/12 , C07D409/14
摘要： The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：本发明提供由通式（1）表示的杂环化合物：本发明化合物具有广泛的精神障碍治疗谱，包括中枢神经系统疾病，副作用高，安全性高。

24. 发明申请

US20080200689A1 1-Substituted-4-nitroimidazole compound and method for preparing the same 失效
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US20080200689A1
公开(公告)日：2008-08-21
申请号：US12007776
申请日：2008-01-15
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D233/92
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH 2的基团， X是卤素原子或式-S（O）n R 1）的基团）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

25. 发明授权

US07262212B2 2,3-dihydro-6-nitroimidazo[2,1-b]oxazoles 有权
标题翻译： 2,3-二氢-6-硝基咪唑并[2,1-b]恶唑
公开(公告)号：US07262212B2
公开(公告)日：2007-08-28
申请号：US10530429
申请日：2003-10-10
申请人： Hidetsugu Tsubouchi , Hirofumi Sasaki , Hideaki Kuroda , Motohiro Itotani , Takeshi Hasegawa , Yoshikazu Haraguchi , Takeshi Kuroda , Takayuki Matsuzaki , Kuninori Tai , Makoto Komatsu , Makoto Matsumoto , Hiroyuki Hashizume , Tatsuo Tomishige , Yuji Seike , Masanori Kawasaki , Takumi Sumida , Shin Miyamura
发明人： Hidetsugu Tsubouchi , Hirofumi Sasaki , Hideaki Kuroda , Motohiro Itotani , Takeshi Hasegawa , Yoshikazu Haraguchi , Takeshi Kuroda , Takayuki Matsuzaki , Kuninori Tai , Makoto Komatsu , Makoto Matsumoto , Hiroyuki Hashizume , Tatsuo Tomishige , Yuji Seike , Masanori Kawasaki , Takumi Sumida , Shin Miyamura
IPC分类号： A61K31/424 , A61K31/438 , C07D498/04 , C07D401/14
CPC分类号： C07D498/04 , C07D498/20 , C07F7/0812
摘要： The present invention provides a 2,3-dihydro-6-nitroimidazo[2,1-b]oxazole compound represented by the following general formula: wherein R1 represents a hydrogen atom or C1-C6 alkyl group, n represents an integer of 0 to 6, R2 represents a group —OR3 or the like, and R3 represents a hydrogen atom, C1-C6 alkyl group or the like, or R1 and —(CH2)nR2 may bind to each other together with carbon atoms adjacent thereto through nitrogen atoms so as to form a spiro ring represented by the general formula (H): wherein R41 is hydrogen, C1-C6 alkyl group or the like. The present compound has an excellent bactericidal action against Mycobacterium tuberculosis, multi-drug-resistant Mycobacterium tuberculosis, and atypical acid-fast bacteria.
摘要翻译：本发明提供由下列通式表示的2,3-二氢-6-硝基咪唑并[2,1-b]恶唑化合物：其中R 1表示氢原子或C 1 -C 6烷基，n表示0〜6的整数，R 2表示基团-OR 3等，R 3表示氢原子，C 1 -C 6烷基等，或R 1和 - （CH 2）n R 2 R 2，可以通过氮原子与与其相邻的碳原子彼此结合形成由通式（H）表示的螺环：其中R 41是氢，C 1 -C 6烷基或喜欢。本发明化合物对结核分枝杆菌，多药耐药结核分枝杆菌和非典型酸性抗菌细菌具有优异的杀菌作用。

26. 发明申请

US20070107613A1 Method and device for clearance adjustment for lead-in roller clearance adjustment mechanism 有权
标题翻译：导入辊间隙调整机构间隙调整方法及装置
公开(公告)号：US20070107613A1
公开(公告)日：2007-05-17
申请号：US11591476
申请日：2006-11-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： B41F13/54
CPC分类号： B65H20/02 , B41F13/03 , B65H2301/522 , B65H2511/13 , B65H2511/22 , B65H2511/224 , B65H2801/21 , B65H2220/01 , B65H2220/11 , B65H2220/02
摘要： A lead-in roller clearance adjustment mechanism includes a pair of lead-in rollers for guiding a web with a clearance therebetween and a clearance adjustment mechanism for adjusting an amount of clearance. The lead-in roller clearance adjustment mechanism further includes motors for driving the clearance adjustment mechanism and potentiometers for detecting output positions of these motors, and adjusts the amount of clearance automatically. A clearance adjustment device for the lead-in roller clearance adjustment mechanism includes a control device for an automated paper threading device and for clearance adjustment between the lead-in rollers, a web thickness of the web being inputted in the control device, the control device controlling the motors in order that the amount of clearance can be set at a predetermined value before threading the web into a lead-in roller unit, and that the amount of clearance can be set at a value corresponding to the inputted web thickness of the web after threading the web into the lead-in roller unit.
摘要翻译：导入辊间隙调节机构包括一对用于引导具有间隙的腹板的引入辊和用于调节间隙量的间隙调节机构。导入辊间隙调节机构还包括用于驱动间隙调节机构的电动机和用于检测这些电动机的输出位置的电位器，并且自动调节间隙量。用于引入滚轮间隙调节机构的间隙调节装置包括用于自动纸张穿线装置的控制装置，以及引导辊之间的间隙调整，卷筒纸的卷材厚度输入到控制装置中，控制装置控制电动机，以便在将幅材穿入导入辊单元之前将间隙量设定在预定值，并且间隙量可以被设定为对应于幅材的输入幅材厚度的值将网状物穿入导入辊单元后。

27. 发明授权

US06696351B1 Semiconductor device having a selectively deposited conductive layer 失效
标题翻译：具有选择性沉积的导电层的半导体器件
公开(公告)号：US06696351B1
公开(公告)日：2004-02-24
申请号：US09056794
申请日：1998-04-08
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L2170
CPC分类号： H01L27/10894 , H01L21/28518 , H01L27/1052 , H01L27/10817 , H01L27/10897 , H01L28/86
摘要： A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising the process of forming an interlayer insulating layer covering the memory array and peripheral circuit; forming the memory cells; exposing a surface of diffusion regions in the peripheral circuit after forming the memory cells; and forming a covering conductive layer on the exposed region of the diffusion regions in peripheral circuit. A semiconductor memory device produced by such a process has memory area having a good data retention due to a low junction leakage in the diffusion regions of the memory cells, whereas it has a high processing speed peripheral circuit due to a low resistance of the diffusion regions of the peripheral circuit.
摘要翻译：一种制造半导体存储器件的方法，所述半导体存储器件具有包括存储单元和在一个衬底上的外围电路的存储器阵列，包括形成覆盖所述存储器阵列和外围电路的层间绝缘层的工艺; 形成记忆单元; 在形成存储单元之后暴露外围电路中的扩散区域的表面; 并且在外围电路的扩散区域的露出区域上形成覆盖导电层。通过这种工艺制造的半导体存储器件由于存储单元的扩散区域中的低结泄漏而具有良好的数据保持性的存储区域，而由于外围电路的扩散区域的低电阻，它具有高处理速度的外围电路。

28. 发明授权

US06538896B2 Surface mount type electronic component 有权
公开(公告)号：US06538896B2
公开(公告)日：2003-03-25
申请号：US10121732
申请日：2002-04-15
申请人： Eitaro Kameda , Toshiyuki Baba , Hideaki Kuroda , Yasuhiro Morimoto
发明人： Eitaro Kameda , Toshiyuki Baba , Hideaki Kuroda , Yasuhiro Morimoto
IPC分类号： H05K702
CPC分类号： H03H9/178 , H03H9/0557 , H03H9/0561 , H03H9/1014 , H05K3/3442 , H05K2201/049 , H05K2201/09381 , H05K2201/10083 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A surface mount type electronic component includes a substantially rectangular case substrate, an electronic element mounted on the case substrate along the longitudinal direction, and a cap which is fixed onto the case substrate in such a manner as to cover the electronic element. First and second top-surface electrodes and first and second bottom-surface electrodes, which extend along the width direction of the case substrate, are arranged with a spacing on the top surface and the bottom surface of the case substrate, respectively. The first top-surface electrode and the first bottom-surface electrode are connected to each other via a first side electrode disposed on the side surface of the case substrate, and the second top-surface electrode and the second bottom-surface electrode are connected to each other via a second side electrode disposed on the side surface of the case substrate.

29. 发明授权

US06215229B1 Chip-type piezoelectric resonator and method for adjusting resonance frequency thereof 失效
标题翻译：片式压电谐振器及其谐振频率的调节方法
公开(公告)号：US06215229B1
公开(公告)日：2001-04-10
申请号：US09310237
申请日：1999-05-12
申请人： Hideaki Kuroda , Masaya Wajima , Ryuhei Yoshida
发明人： Hideaki Kuroda , Masaya Wajima , Ryuhei Yoshida
IPC分类号： H03H917
CPC分类号： H03H9/177 , H03H3/04 , H03H9/0561 , H03H9/1035 , H03H2003/0428
摘要： A capacitor-included, chip-type piezoelectric resonator allows minute and highly precise adjustment of electrostatic capacitance and the resonance frequency after production of the piezoelectric resonator by laminating a piezoelectric element and dielectric substrates. The resonator includes a piezoelectric substrate laminated with dielectric substrates and external electrodes disposed on the laminate body. A plurality of external electrodes are arranged to extend from the outer major surface of the first dielectric substrate to the outer major surface of the second dielectric substrate along first and second side surfaces disposed opposite to each other. On the outer major surface of the second dielectric substrate, at least one external electrode is divided into first and second electrode portions.
摘要翻译：包含电容器的芯片型压电谐振器通过层叠压电元件和电介质基板，能够在制造压电谐振器之后对静电电容和谐振频率进行微调和高度精确的调整。谐振器包括层叠有电介质基板的压电基板和设置在层叠体上的外部电极。多个外部电极布置成沿着彼此相对设置的第一和第二侧表面从第一电介质基板的外主表面延伸到第二电介质基板的外主表面。在第二电介质基板的外主表面上，至少一个外电极被分成第一和第二电极部分。

30. 发明授权

US6029260A Memory analyzing apparatus 失效
标题翻译：内存分析装置
公开(公告)号：US6029260A
公开(公告)日：2000-02-22
申请号：US919149
申请日：1997-08-28
申请人： Ken Hashizume , Norifumi Kobayashi , Hideaki Kuroda
发明人： Ken Hashizume , Norifumi Kobayashi , Hideaki Kuroda
IPC分类号： G06F12/16 , G11C29/00 , G11C29/44
CPC分类号： G11C29/44
摘要： When defective bits of a memory are remedied, the disclosed memory analyzing apparatus can execute remedy analysis of a large capacity memory freely and effectively in a short time. Data are transferred from a defect cell memory (3) provided for a memory tester body (1) to a remedy analyzing apparatus (2) in the sequence suitable for defect remedy. The transferred data are regenerated in address sequence, and the numbers of the defective bits are counted and stored in an X line defect memory (26) and a Y line defect memory (27) at the same time. Further, a line detect flag is raised on the basis of the number of detective bits in the same row and the same column. Further, with respect to the defective bits of a line other than the defect line, the addresses thereof are stored in the bit defect memory (35), and the number of the defect bits is stored in a unit region defect number memory (33) for each defect remedy unit region. A CPU (5) allocates remedy lines to the line defects with a priority, and further processes the allocation analysis of the remedy lines on the basis of the data obtained from the respective memories (26, 27, 33, and 35), so that it is possible to reduce the remedy processing time markedly.
摘要翻译：当修复存储器的有缺陷的位时，所公开的存储器分析装置可以在短时间内自由而有效地执行大容量存储器的补救分析。将数据从适合于缺陷补救的顺序从针对存储器测试器主体（1）的缺陷单元存储器（3）传送到补救分析设备（2）。传送的数据以地址顺序重新生成，并且有缺陷位的数量被同时计数并存储在X行缺陷存储器（26）和Y行缺陷存储器（27）中。此外，基于同一行和同一列中的检测位的数量，生成行检测标志。此外，对于缺陷线以外的线的有缺陷的位，其地址被存储在位缺陷存储器（35）中，并且缺陷位的数量被存储在单位区域缺陷数存储器（33）中，针对每个缺陷补救单位区域。 CPU（5）以优先级为线路缺陷分配补救线路，并且根据从各个存储器（26,27,33和35）获得的数据进一步处理补救线路的分配分析，使得可以显着减少补救处理时间。

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