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1. 发明授权

US6029260A Memory analyzing apparatus 失效
标题翻译：内存分析装置
公开(公告)号：US6029260A
公开(公告)日：2000-02-22
申请号：US919149
申请日：1997-08-28
申请人： Ken Hashizume , Norifumi Kobayashi , Hideaki Kuroda
发明人： Ken Hashizume , Norifumi Kobayashi , Hideaki Kuroda
IPC分类号： G06F12/16 , G11C29/00 , G11C29/44
CPC分类号： G11C29/44
摘要： When defective bits of a memory are remedied, the disclosed memory analyzing apparatus can execute remedy analysis of a large capacity memory freely and effectively in a short time. Data are transferred from a defect cell memory (3) provided for a memory tester body (1) to a remedy analyzing apparatus (2) in the sequence suitable for defect remedy. The transferred data are regenerated in address sequence, and the numbers of the defective bits are counted and stored in an X line defect memory (26) and a Y line defect memory (27) at the same time. Further, a line detect flag is raised on the basis of the number of detective bits in the same row and the same column. Further, with respect to the defective bits of a line other than the defect line, the addresses thereof are stored in the bit defect memory (35), and the number of the defect bits is stored in a unit region defect number memory (33) for each defect remedy unit region. A CPU (5) allocates remedy lines to the line defects with a priority, and further processes the allocation analysis of the remedy lines on the basis of the data obtained from the respective memories (26, 27, 33, and 35), so that it is possible to reduce the remedy processing time markedly.
摘要翻译：当修复存储器的有缺陷的位时，所公开的存储器分析装置可以在短时间内自由而有效地执行大容量存储器的补救分析。将数据从适合于缺陷补救的顺序从针对存储器测试器主体（1）的缺陷单元存储器（3）传送到补救分析设备（2）。传送的数据以地址顺序重新生成，并且有缺陷位的数量被同时计数并存储在X行缺陷存储器（26）和Y行缺陷存储器（27）中。此外，基于同一行和同一列中的检测位的数量，生成行检测标志。此外，对于缺陷线以外的线的有缺陷的位，其地址被存储在位缺陷存储器（35）中，并且缺陷位的数量被存储在单位区域缺陷数存储器（33）中，针对每个缺陷补救单位区域。 CPU（5）以优先级为线路缺陷分配补救线路，并且根据从各个存储器（26,27,33和35）获得的数据进一步处理补救线路的分配分析，使得可以显着减少补救处理时间。

2. 发明授权

US09093316B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09093316B2
公开(公告)日：2015-07-28
申请号：US13475365
申请日：2012-05-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/3205 , H01L27/115 , H01L21/74 , H01L21/768 , H01L23/48 , H01L27/12 , H01L27/22 , H01L27/24 , H01L21/8238 , H01L45/00
CPC分类号： H01L27/11507 , H01L21/74 , H01L21/76895 , H01L21/823814 , H01L23/481 , H01L27/1203 , H01L27/228 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
摘要翻译：半导体器件包括：形成在衬底的前表面的扩散层; 在扩散层的前表面形成低电阻部分以具有低于扩散层的电阻; 以及从基板的后表面穿过基板的后接触电极，以通过扩散层连接到低电阻部分。

3. 发明申请

US20120130082A1 1-Substituted-4-Nitroimidazole Compound and Method for Preparing the Same 审中-公开
标题翻译： 1-取代的4-硝基咪唑化合物及其制备方法
公开(公告)号：US20120130082A1
公开(公告)日：2012-05-24
申请号：US13362646
申请日：2012-01-31
申请人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D405/06 , C07D233/92 , C07D233/84
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

4. 发明申请

US20100140617A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20100140617A1
公开(公告)日：2010-06-10
申请号：US12629150
申请日：2009-12-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L29/78 , H01L21/66 , H01L23/544
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.
摘要翻译：半导体器件制造方法包括以下步骤：在绝缘体上硅衬底的硅层的表面侧上形成晶体管，绝缘体上硅衬底通过层叠衬底，绝缘层和硅层; 形成覆盖晶体管的第一绝缘膜和包括与绝缘体上硅基板上的晶体管电连接的部分的布线部分; 通过所述布线部分测量所述晶体管的阈值电压; 在所述第一绝缘膜的表面上形成支撑衬底，其中所述第二绝缘膜置于所述支撑衬底和所述第一绝缘膜之间; 在绝缘体上硅衬底的背面去除衬底和绝缘层的至少一部分; 以及基于测量的阈值电压来调整晶体管的阈值电压。

5. 发明申请

US20090264404A1 Derivatives of 4-piperazin-1-yl-4-benzo[b]thiophene suitable for the treatment of cns disorders 有权
标题翻译：适用于治疗cns病症的4-哌嗪-1-基-4-苯并[b]噻吩的衍生物
公开(公告)号：US20090264404A1
公开(公告)日：2009-10-22
申请号：US11991146
申请日：2006-08-31
申请人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
IPC分类号： A61K31/496 , C07D409/14 , C07D265/36 , C07D223/08 , C07D243/08 , C07D267/14 , A61K31/536 , A61K31/55 , A61K31/551 , A61K31/553 , A61K31/397 , A61P25/00
CPC分类号： C07D409/12 , C07D333/54 , C07D407/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08 , C07D491/113
摘要： A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：由式（1）表示的杂环化合物或其盐：其中R 2表示氢原子或低级烷基; A表示低级亚烷基或低级亚烯基; R1表示芳基或杂环基。本发明的化合物具有广泛的精神障碍治疗范围，包括中枢神经系统疾病，无副作用和高安全性。

6. 发明申请

US20080218031A1 Electroacoustic Transducer 有权
标题翻译：电声传感器
公开(公告)号：US20080218031A1
公开(公告)日：2008-09-11
申请号：US12126022
申请日：2008-05-23
申请人： Hideaki Kuroda , Yoshihiro Sonoda
发明人： Hideaki Kuroda , Yoshihiro Sonoda
IPC分类号： H04R17/00
CPC分类号： H04R17/10
摘要： An electroacoustic transducer having one end portion of a first piezoelectric element and one end portion of a second piezoelectric element fixed to a frame such that the first piezoelectric element and the second piezoelectric element are supported by the frame in an opening of the frame in the cantilever manner. A flexible thin film is bonded to the frame and the first and second piezoelectric elements so that it covers at least a gap between each of the piezoelectric elements and the frame. The other end portions of the piezoelectric elements are free end portions, and face each other with a gap therebetween.
摘要翻译：一种电声换能器，其具有第一压电元件的一个端部和固定到框架的第二压电元件的一个端部，使得第一压电元件和第二压电元件由框架支撑在悬臂中的框架的开口中方式。柔性薄膜结合到框架和第一和第二压电元件，使得它覆盖每个压电元件和框架之间的至少一个间隙。压电元件的另一端部是自由端部，并且彼此面对地间隔开。

7. 发明授权

US06583490B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
公开(公告)号：US06583490B2
公开(公告)日：2003-06-24
申请号：US09888534
申请日：2001-06-26
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L2900
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

8. 发明授权

US5825059A Semiconductor device and an interconnection structure of same 失效
标题翻译：半导体器件及其互连结构
公开(公告)号：US5825059A
公开(公告)日：1998-10-20
申请号：US791271
申请日：1997-01-30
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8242 , H01L27/108 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L29/41775 , H01L29/456
摘要： A connection hole of a semiconductor device having a structure of preventing the connection hole from being short-circuited or degraded in dielectric strength even if there occurs misalignment when an opening portion is formed in an interlayer insulating film at a position over a conductive layer for forming the opening portion. The connection hole includes an inner wall on which an insulating film protected by a side wall made from non-crystal silicon is formed.
摘要翻译：即使在形成导电层的位置上的层间绝缘膜中形成开口部时发生未对准的结构，也可以使用具有防止连接孔短路或劣化的结构的半导体装置的连接孔开口部分。连接孔包括内壁，其上形成有由非晶硅制成的侧壁保护的绝缘膜。

9. 发明授权

US08362565B2 Memory element with small threshold voltage variance and high-speed logic element with low power consumption 有权
标题翻译：具有小阈值电压差异的存储元件和低功耗的高速逻辑元件
公开(公告)号：US08362565B2
公开(公告)日：2013-01-29
申请号：US12630396
申请日：2009-12-03
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L29/66
CPC分类号： H01L21/84 , H01L27/105 , H01L27/11 , H01L27/1116 , H01L27/12 , H01L29/78648
摘要： A semiconductor device includes: a semiconductor layer; an element isolation region formed in the semiconductor layer for separation between a memory element part and a logic element part; first and second field-effect transistors formed in the memory element part and having first and second gate electrodes on a first surface side of the semiconductor layer and a second surface side opposite to the first surface, respectively, and having a source and drain region in common with each other; a third field-effect transistor formed in the logic element part and having a third gate electrode on the second surface side; and first and second insulating films formed on the semiconductor layer to cover the first field-effect transistor and the second and third field-effect transistors, respectively. The first field-effect transistor and the second field-effect transistor are fully-depleted field-effect transistors. The first gate electrode and the second gate electrode are electrically connected.
摘要翻译：半导体器件包括：半导体层; 形成在所述半导体层中用于在存储元件部分和逻辑元件部分之间分离的元件隔离区; 第一和第二场效应晶体管形成在存储元件部分中，并且在半导体层的第一表面侧上分别具有第一和第二栅极电极以及与第一表面相对的第二表面侧，并且具有源极和漏极区域相互共同; 形成在所述逻辑元件部分中并且在所述第二表面侧上具有第三栅电极的第三场效应晶体管; 以及形成在所述半导体层上以分别覆盖所述第一场效应晶体管和所述第二和第三场效应晶体管的第一和第二绝缘膜。第一场效应晶体管和第二场效应晶体管是完全耗尽的场效应晶体管。第一栅电极和第二栅极电连接。

10. 发明授权

US08349840B2 Piperazine-substituted benzothiophenes for treatment of mental disorders 有权
公开(公告)号：US08349840B2
公开(公告)日：2013-01-08
申请号：US12970690
申请日：2010-12-16
申请人： Hiroshi Yamashita , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
IPC分类号： A61K31/496
CPC分类号： A61K31/496 , C07D405/12 , C07D409/12 , C07D409/14
摘要： The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

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