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11. 发明授权

US10032949B2 Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber 有权
公开(公告)号：US10032949B2
公开(公告)日：2018-07-24
申请号：US14936131
申请日：2015-11-09
申请人： International Business Machines Corporation
发明人： Talia S. Gershon , Supratik Guha , Oki Gunawan , Richard A. Haight , Yun Seog Lee
IPC分类号： H01L31/18 , H01L31/072 , H01L31/032 , H01L21/02 , H01L31/0392 , H01L31/07
摘要： Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

12. 发明授权

US09917220B2 Buffer layer for high performing and low light degraded solar cells 有权
公开(公告)号：US09917220B2
公开(公告)日：2018-03-13
申请号：US15077169
申请日：2016-03-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Augustin J. Hong , Marinus J. Hopstaken , Jeehwan Kim , John A. Ott , Devendra K. Sadana
IPC分类号： H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/07 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

13. 发明授权

US09806072B2 Super CMOS devices on a microelectronics system 有权
公开(公告)号：US09806072B2
公开(公告)日：2017-10-31
申请号：US15358049
申请日：2016-11-21
申请人： SCHOTTKY LSI, INC.
发明人： Augustine Wei-Chun Chang
IPC分类号： H01L27/118 , H01L29/872 , H01L27/06 , H01L27/11526 , H01L27/112 , H01L21/8238 , H01L31/0376 , H01L31/07 , H01L29/66
CPC分类号： H01L27/0629 , H01L21/8238 , H01L25/065 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/10897 , H01L27/112 , H01L27/11253 , H01L27/11286 , H01L27/11293 , H01L27/11526 , H01L27/11546 , H01L27/11807 , H01L28/20 , H01L29/66143 , H01L29/872 , H01L31/032 , H01L31/0376 , H01L31/03762 , H01L31/07 , H01L31/072 , H01L31/074 , H01L2924/0002 , H03K19/17728 , Y02E10/50 , H01L2924/00
摘要： This application is directed to a low cost IC solution that provides Super CMOS microelectronics macros. Hereinafter, SCMOS refers to Super CMOS and Schottky CMOS. SCMOS device solutions includes a niche circuit element, such as complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co, Ti, Ni or other metal atoms or compounds) to P- and N- Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form (i) generic logic gates, (ii) functional blocks of microprocessors and microcontrollers such as but not limited to data paths, multipliers, muliplier-accumaltors, (ii) memory cells and control circuits of various types (SRAM's with single or multiple read/write port(s), binary and ternary CAM's), (iii) multiplexers, crossbar switches, switch matrices in network processors, graphics processors and other processors to implement a variety of communication protocols and algorithms of data processing engines for (iv) Analytics, (v) block-chain and encryption-based security engines (vi) Artificial Neural Networks with specific circuits to emulate or to implement a self-learning data processor similar to or derived from the neurons and synapses of human or animal brains, (vii) analog circuits and functional blocks from simple to the complicated including but not limited to power conversion, control and management either based on charge pumps or inductors, sensor signal amplifiers and conditioners, interface drivers, wireline data transceivers, oscillators and clock synthesizers with phase and/or delay locked loops, temperature monitors and controllers; all the above are built from discrete components to all grades of VLSI chips. Solar photovoltaic electricity conversion, bio-lab-on-a-chip, hyperspectral imaging (capture/sensing and processing), wireless communication with various transceiver and/or transponder circuits for ranges of frequency that extend beyond a few 100 MHz, up to multi-THz, ambient energy harvesting either mechanical vibrations or antenna-based electromagnetic are newly extended or nacent fields of the SCMOS IC applications.

14. 发明授权

US09548406B2 Photoelectric conversion element and method of manufacturing the same 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US09548406B2
公开(公告)日：2017-01-17
申请号：US14496364
申请日：2014-09-25
申请人： Seiko Epson Corporation
发明人： Takayuki Yonemura , Yoshihiko Yokoyama , Yasuaki Hamada
IPC分类号： H01L31/032 , H01L31/07 , H01L31/072 , H01L31/108 , H01L31/109 , C04B35/26
CPC分类号： H01L31/032 , C04B35/26 , C04B2235/3227 , C04B2235/3232 , C04B2235/3262 , C04B2235/3298 , C04B2235/449 , H01L31/07 , H01L31/072 , H01L31/1085 , H01L31/109 , Y02E10/50
摘要： A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.
摘要翻译：光电转换元件包括第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极，第二电极是透明电极，并且在铁电层和第一电极之间形成pn结或第二电极。

15. 发明申请

US20160336087A1 METHODS FOR THE PREPARATION OF COLLOIDAL NANOCRYSTAL DISPERSION 审中-公开
标题翻译：制备胶体纳米分散体的方法
公开(公告)号：US20160336087A1
公开(公告)日：2016-11-17
申请号：US15150816
申请日：2016-05-10
申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
发明人： Cherie R. Kagan , AARON T. FAFARMAN , JI-HYUK CHOI , WEON-KYU KOH , DAVID K. KIM , SOONG JU OH , YUMING LAI , SUNG-HOON HONG , SANGAMESHWAR RAO SAUDARI , CHRISTOPHER B. MURRAY
IPC分类号： H01B1/06 , H01L29/24 , H01L29/66 , H01L29/06 , H01L31/07 , H01L29/45 , H01L29/49 , H01L31/032 , H01L31/18 , H01L29/22 , H01L29/786
CPC分类号： H01L31/07 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01B1/06 , H01L29/0665 , H01L29/127 , H01L29/18 , H01L29/22 , H01L29/2203 , H01L29/24 , H01L29/413 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78603 , H01L29/78681 , H01L31/0324 , H01L31/18 , Y02E10/50 , Y10S977/891 , Y10S977/938 , Y10S977/954
摘要： Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.
摘要翻译：公开了制备用作NC薄膜的胶态纳米晶体（NC）的分散体的方法。用配体封端的NC的分散体可以与含有硫属异氰酸酯（xCN）的配体的溶液混合。混合物可以分离成上清液和絮凝物。絮凝物可以用溶剂分散以形成用xCN基配体封端的NC的随后分散体。

16. 发明申请

US20160260859A1 PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开
标题翻译：具有接口带隙修改结构的光电装置及其形成方法
公开(公告)号：US20160260859A1
公开(公告)日：2016-09-08
申请号：US15156940
申请日：2016-05-17
申请人： International Business Machines Corporation , Egypt Nanotechnology Center
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/07 , H01L31/028 , H01L31/056 , H01L31/0224
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
摘要翻译：在p掺杂半导体层和光伏器件的透明导电材料层之间提供肖特基势垒减少层。肖特基势垒减少层可以是具有大于透明导电材料层的功函数的功函数的导电材料层。导电材料层可以是诸如碳纳米管层或石墨烯层的碳材料层。或者，导电材料层可以是具有比透明导电材料层更大的功函数的另一透明导电材料层。肖特基势垒的减小降低了透明材料层和p掺杂半导体层的接触电阻，从而降低了串联电阻并提高了光伏器件的效率。

17. 发明授权

US09111769B2 Semiconductor device and method for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09111769B2
公开(公告)日：2015-08-18
申请号：US14118173
申请日：2012-05-16
申请人： Masatoshi Aketa , Yuta Yokotsuji
发明人： Masatoshi Aketa , Yuta Yokotsuji
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108 , H01L29/06 , H01L29/16 , H01L29/872 , H01L21/04 , H01L21/265 , H01L29/20 , H01L29/66
CPC分类号： H01L29/063 , H01L21/0415 , H01L21/046 , H01L21/26546 , H01L29/0611 , H01L29/0619 , H01L29/0623 , H01L29/08 , H01L29/1608 , H01L29/2003 , H01L29/36 , H01L29/66143 , H01L29/66212 , H01L29/872
摘要： A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
摘要翻译：本发明的半导体器件包括由宽带隙半导体构成的半导体层和与半导体层的表面接触的肖特基电极。半导体层包括形成半导体层的表面的漂移层和形成在漂移层的表面层部分上并且具有比漂移层更高的电阻的高电阻层。通过从半导体层的表面注入杂质离子然后在小于1500℃进行退火处理来形成高电阻层。

18. 发明授权

US09093595B2 Photo detection device 有权
标题翻译：照片检测装置
公开(公告)号：US09093595B2
公开(公告)日：2015-07-28
申请号：US14154460
申请日：2014-01-14
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Daewoong Suh
IPC分类号： H01L31/102 , H01L31/109 , H01L31/0304 , H01L31/0236 , H01L31/0216 , H01L31/07
CPC分类号： H01L31/109 , H01L31/02162 , H01L31/02327 , H01L31/0236 , H01L31/03044 , H01L31/03048 , H01L31/07 , H01L31/108 , H01L31/1848 , Y02E10/544
摘要： TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.
摘要翻译： TA光检测装置，包括基板，在基板上形成的带通滤波器层，形成在带通滤波器层上的光吸收层，形成在光吸收层的一部分上的肖特基层，第一电极层形成在肖特基层的一部分上，以及形成在光吸收层上并与肖特基层间隔开的第二电极层。

19. 发明申请

US20140284631A1 METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MoS2 SCHOTTKY JUNCTIONS 有权
标题翻译：用于从MoS2肖特基结产生照片响应的方法和系统
公开(公告)号：US20140284631A1
公开(公告)日：2014-09-25
申请号：US14295592
申请日：2014-06-04
申请人： Georgetown University
发明人： Makarand PARANJAPE , Paola BARBARA , Amy LIU , Marcio FONTANA
IPC分类号： H01L33/00 , H01L31/07 , H01L31/18
CPC分类号： H01L33/005 , H01L31/032 , H01L31/035209 , H01L31/07 , H01L31/1013 , H01L31/18 , H01L33/0041 , H01L33/06 , H01L33/28 , H01L33/40 , Y02E10/50
摘要： Devices incorporating a single to a few-layer MoS2 channels in combination with optimized substrate, dielectric, contact and electrode materials and configurations thereof, exhibit light emission, photoelectric effect, and superconductivity, respectively.
摘要翻译：结合单层至几层MoS2通道的设备与优化的基板，电介质，接触和电极材料及其构造相结合，分别显示出发光，光电效应和超导性。

20. 发明授权

US08432012B2 Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same 有权
标题翻译：包括具有重叠掺杂区域的肖特基二极管的半导体器件及其制造方法
公开(公告)号：US08432012B2
公开(公告)日：2013-04-30
申请号：US13051606
申请日：2011-03-18
申请人： Qingchun Zhang , Jason Henning
发明人： Qingchun Zhang , Jason Henning
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07
CPC分类号： H01L29/6606 , H01L21/046 , H01L21/0495 , H01L29/0619 , H01L29/0692 , H01L29/1608 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined, and a plurality of spaced apart doped regions within the active region. The plurality of doped regions have a second conductivity type that is opposite the first conductivity type and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of doped regions include a plurality of rows extending in a longitudinal direction. Each of the rows includes a plurality of longitudinally extending segments, and the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction.
摘要翻译：半导体器件包括具有第一导电类型并且具有限定半导体器件的有源区的表面的半导体层以及有源区内的多个间隔开的掺杂区。多个掺杂区域具有与第一导电类型相反的第二导电类型并且限定有源区域内半导体层的多个暴露部分。多个掺杂区域包括在纵向方向上延伸的多个列。每排包括多个纵向延伸的段，并且第一排中的纵向延伸的段在垂直于纵向方向的横向方向上至少部分地与相邻行中的纵向延伸段重叠。

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