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11. 发明授权

US6010880A Inhibitors of human plasmin derived from the kunitz domains 失效
标题翻译：人类纤溶酶抑制剂衍生自kunitz结构域
公开(公告)号：US6010880A
公开(公告)日：2000-01-04
申请号：US676124
申请日：1997-01-07
申请人： William Markland , Robert Charles Ladner
发明人： William Markland , Robert Charles Ladner
IPC分类号： C12N15/09 , A61K38/55 , A61K38/57 , A61K51/00 , A61P7/04 , C04B35/593 , C07K14/81 , C12N9/68 , C12Q1/37 , C12Q1/56 , C07K1/00 , C07H21/04 , C12N1/20 , C12P21/06
CPC分类号： C04B35/5935 , C07K14/8114
摘要： This invention relates to novel mutants of the first Kunitz domain (K.sub.1) of the human lipoprotein-associated coagulation inhibitor (LACI) which inhibit plasmin. The invention also relates to other modified Kunitz domains that inhibit plasmin and to other plasmin inhibitors.
摘要翻译： PCT No.PCT / US95 / 00298 Sec。 371日期1997年1月7日 102（e）日期1997年1月7日PCT 1995年1月11日PCT PCT。公开号WO95 / 18830 日期1995年7月13日本发明涉及抑制纤溶酶的人脂蛋白相关凝血抑制剂（LACI）的第一Kunitz结构域（K1）的新突变体。本发明还涉及抑制纤溶酶和其它纤溶酶抑制剂的其它修饰的Kunitz结构域。

12. 发明授权

US5993715A Method of unidirectionally aligning whiskers during tape casting 失效
标题翻译：在铸造过程中单方向调整晶须的方法
公开(公告)号：US5993715A
公开(公告)日：1999-11-30
申请号：US868838
申请日：1997-06-09
申请人： Dong-Soo Park
发明人： Dong-Soo Park
IPC分类号： B28B1/52 , C04B35/593 , C04B35/622 , C04B35/80 , B28B1/14 , C04B35/81
CPC分类号： B28B1/52 , C04B35/5935 , C04B35/62218 , C04B35/806
摘要： A method of unidirectionally aligning the whiskers during tape casting and a sintered silicon nitride laminate of controlled properties and microstructure through alignment of the reinforcing grains fabricated by using the method are disclosed. The whiskers are unidirectionally oriented by placing a row of guides 0.2-0.5 mm apart from each other at exit of the reservoir of the slip containing the whiskers during tape casting. The silicon nitride comprising 10-30 volume % of elongated large grains growing from the .beta.-Si.sub.3 N.sub.4 whiskers and oriented unidirectionally in the fine grained matrix is fully densified by gas pressure sintering at 1900.degree. C. It exhibits a fracture toughness value as high as 9.24 Mpa m normal to the whisker alignment according to the Evans-Charles' method disclosed in the Journal of the American Ceramic Society, 59 [7-8], 371-372 (1976).
摘要翻译：公开了一种通过使用该方法制造的增强晶粒的对准来控制带铸期间的晶须和控制性能和微结构的烧结氮化硅层压体的方法。在晶圆铸造期间，通过在包含晶须的滑块的储存器的出口处彼此排列一排彼此相距0.2-0.5mm的导向器将晶须单向取向。包含10-30体积％的从β-SiN3N4晶须生长并在细粒基体中单向取向的细长大晶粒的氮化硅通过在1900℃下的气体压力烧结而完全致密化。其断裂韧性值高达9.24 根据“美国陶瓷学会杂志”59 [7-8]，371-372（1976）中公开的Evans-Charles'方法，晶须对准中的Mpa + E，rad m + EE。

13. 发明授权

US5922629A Silicon nitride ceramic sliding material and process for producing the same 失效
标题翻译：氮化硅陶瓷滑动材料及其制造方法
公开(公告)号：US5922629A
公开(公告)日：1999-07-13
申请号：US847746
申请日：1997-04-22
申请人： Jin-Joo Park , Yasushi Mochida , Akira Kuibira , Osamu Komura , Akira Yamaguchi
发明人： Jin-Joo Park , Yasushi Mochida , Akira Kuibira , Osamu Komura , Akira Yamaguchi
IPC分类号： F16C33/24 , C04B35/584 , C04B35/593 , C04B35/64 , C04B38/00 , C10M103/06 , C04B35/587
CPC分类号： C04B35/5935 , C04B35/584 , C04B38/0051 , C04B2111/00353
摘要： A silicon nitride ceramic sliding material comprising silicon nitride crystal grains and a grain boundary phase and having a porosity of 2 to 10% and a maximum pore size of 20 to 100 .mu.m. The silicon nitride ceramic sliding material preferably has a textural structure wherein the proportion of the total area of silicon nitride crystal grains of 0.1 to 10 .mu.m.sup.2 in area to the total area of all the silicon nitride crystal grains present in an arbitrary two-dimensional cross section is 30 to 90% and the proportion of the number of silicon nitride crystal grains of 2 to 10 in aspect ratio to the number of all the silicon nitride crystal grains present in that cross section is at least 20%. The material is produced by mixing a silicon nitride powder with a sintering aid powder, molding the resulting mixture, then heat-treating the resulting molded body in a nitrogen-containing atmosphere under reduced pressure at 1,000 to 1,500.degree. C., and then sintering it in a nonoxidizing atmosphere under ordinary pressure or under pressure, at 1,550 to 1,800.degree. C.
摘要翻译：一种氮化硅陶瓷滑动材料，其包含氮化硅晶粒和晶界相，并且具有2至10％的孔隙率和20至100μm的最大孔径。氮化硅陶瓷滑动材料优选具有纹理结构，其中氮化硅晶粒的总面积与面积中的所有氮化硅晶粒的总面积的相对于任意二维十字形中的全部氮化硅晶粒的面积为0.1-10μm 截面积为30〜90％，氮化硅晶粒数的比例为纵横比为2〜10的比例与存在于该截面中的全部氮化硅晶粒的数量的比例为20％以上。通过将氮化硅粉末与烧结助剂粉末混合，将所得混合物成型，然后在含氮气氛中，在减压下在1000〜1500℃下对所得成形体进行热处理，然后烧结在常压或压力下的非氧化性气氛中，在1550〜1800℃。

14. 发明授权

US5908797A Silicon nitride based sintered material and method for producing same 失效
标题翻译：氮化硅基烧结体及其制造方法
公开(公告)号：US5908797A
公开(公告)日：1999-06-01
申请号：US683144
申请日：1996-07-18
申请人： Kazuhiro Urashima , Shigeru Iwase
发明人： Kazuhiro Urashima , Shigeru Iwase
IPC分类号： F16C33/10 , B21D24/00 , B21D28/00 , C04B35/584 , C04B35/593 , C04B35/597 , C04B35/599
CPC分类号： C04B35/597 , C04B35/5935
摘要： To provide a silicon nitride based sintered material having high strength and high hardness and superior in reliability, silicon nitride sintered material has a composition mainly composed of silicon nitride or Si--Al--O--N, and further comprises 0.5 to 3 wt % of a Mg component, calculated as MgO, and 3 to 10 wt % of a Yb component, calculated as Yb.sub.2 O.sub.3. As a secondary crystal phase, the material contains one or more of Yb.sub.2 Si.sub.3 N.sub.4 O.sub.3, Yb.sub.2 Si.sub.3 N.sub.2 O.sub.5 and Yb.sub.4 Si.sub.2 N.sub.2 O.sub.7. Silicon nitride or Si--Al--O--N comprises 20-50 vol % of needle-like crystals of the entire material.
摘要翻译：为了提供具有高强度和高硬度并且可靠性优异的氮化硅基烧结材料，氮化硅烧结材料具有主要由氮化硅或Si-Al-ON组成的组成，并且还包含0.5至3重量％的Mg组分，以MgO计，和3〜10重量％的Yb成分，按Yb2O3计算。作为二次晶相，该材料含有Yb2Si3N4O3，Yb2Si3N2O5和Yb4Si2N2O7中的一种或多种。氮化硅或Si-Al-O-N包括20-50体积％的整个材料的针状晶体。

15. 发明授权

US5902542A Method of producing silicon nitride ceramics having thermal high conductivity 失效
标题翻译：具有导热性高的氮化硅陶瓷的制造方法
公开(公告)号：US5902542A
公开(公告)日：1999-05-11
申请号：US766317
申请日：1996-12-13
申请人： Kiyoshi Hirao , Koji Watari , Motohiro Toriyama , Syuzo Kanzaki , Masaaki Obata
发明人： Kiyoshi Hirao , Koji Watari , Motohiro Toriyama , Syuzo Kanzaki , Masaaki Obata
IPC分类号： C04B35/584 , C04B35/593 , C04B35/638 , C04B35/64 , C04B35/645
CPC分类号： C04B35/5935
摘要： The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.
摘要翻译：本发明提供了具有高导热性的氮化硅陶瓷及其制造方法。本发明涉及一种具有氮化硅结构的氮化硅烧结体的制造方法，该氮化硅烧结体具有在与晶体取向方向平行的方向上单轴取向并具有100〜150W / mK的高导热率的微结构，通过将烧结助剂，β-氮化硅单晶的混合粉末作为晶种和氮化硅原料粉末与分散介质混合来形成浆料，通过带状流延或挤出成型形成浆料，用β - 氮化硅单晶，其平行于铸造平面取向以去除有机组分，如果需要，通过热压等来致密化，并且在1〜100个大气压的氮气压力下，在1700〜2000℃进一步退火。

16. 发明授权

US5880439A Functionally stepped, resistive ceramic 失效
标题翻译：功能梯级，电阻陶瓷
公开(公告)号：US5880439A
公开(公告)日：1999-03-09
申请号：US614058
申请日：1996-03-12
申请人： Seetharama C. Deevi , A. Clifton Lilly, Jr.
发明人： Seetharama C. Deevi , A. Clifton Lilly, Jr.
IPC分类号： B32B18/00 , C04B35/58 , C04B35/593 , H01C7/00 , H01C17/30 , H05B3/14 , H05B3/58 , C04B35/03 , H01B1/06 , H01C1/012
CPC分类号： C04B35/58 , B32B18/00 , C04B35/58092 , C04B35/593 , C04B35/645 , C04B35/6455 , C04B35/806 , C04B37/006 , C04B37/026 , H01C17/30 , H01C7/001 , H05B3/141 , C04B2111/00405 , C04B2235/6567 , C04B2235/658 , C04B2235/6581 , C04B2235/666 , C04B2235/75 , C04B2237/124 , C04B2237/125 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/346 , C04B2237/348 , C04B2237/36 , C04B2237/365 , C04B2237/368 , C04B2237/38 , C04B2237/402 , C04B2237/403 , C04B2237/405 , C04B2237/406 , C04B2237/58 , C04B2237/588 , C04B2237/704 , C04B2237/76 , C04B2237/765 , C04B2237/78
摘要： An electrically powered functionally graded ceramic composite heater and a functionally stepped ceramic composite heater useful for cigarette lighters. The electrical resistance heater includes discrete heating zones wherein each zone of the heater can be activated using an electric control module, and is capable of heating to a temperature in the range of 600.degree. C. to 900.degree. C. using portable energy devices. The ceramic heater can be made by pressing together layers of differing amounts of constituents of the ceramic precursor material followed by secondary processing steps to obtain discrete heating elements. The heater design can include a hub on one end to provide structural integrity, and function as a common for the heating zones.
摘要翻译：电动功能梯度陶瓷复合加热器和用于打火机的功能阶梯式陶瓷复合加热器。电阻加热器包括分立的加热区，其中可以使用电控模块来激活加热器的每个区域，并且能够使用便携式能量装置加热至600℃至900℃的温度。陶瓷加热器可以通过将不同量的陶瓷前体材料的组分的层压在一起而后进行二次加工步骤来制得，以获得分立的加热元件。加热器设计可以包括在一端的毂，以提供结构完整性，并且作为加热区域的常见功能。

17. 发明授权

US5849360A Tube chemical gas deposition method of preparing titanium nitride coated titanium carbide for titanium carbide/silicon nitride composites 失效
标题翻译：用于碳化钛/氮化硅复合材料的氮化钛涂层碳化钛的管化学气体沉积方法
公开(公告)号：US5849360A
公开(公告)日：1998-12-15
申请号：US670259
申请日：1996-06-20
申请人： Jow-Lay Huang , Ming-Tung Lee
发明人： Jow-Lay Huang , Ming-Tung Lee
IPC分类号： C04B35/593 , C04B35/628 , C04B41/50 , C04B41/87 , C23C16/34 , C23C16/44 , B05D3/02
CPC分类号： C04B35/62884 , C04B35/593 , C04B35/62836 , C04B35/62897 , C04B41/009 , C04B41/5068 , C04B41/87 , C23C16/34 , C23C16/4417 , C04B2235/3217 , C04B2235/3225 , C04B2235/3843 , C04B2235/3878 , C04B2235/3886 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/77 , C04B2235/96
摘要： A tube chemical vapor deposition method of preparing titanium carbide/silicon nitride (TiC/Si.sub.3 N.sub.4) composites. To prepare such composites, titanium carbide (TiC) is first coated with a homogeneous layer of titanium nitride (Ti.sub.3 N.sub.4). A gas mixture of titanium chloride (TiCl.sub.4), nitrogen (N.sub.2), hydrogen (H.sub.2) with an appropriate ratio is introduced into a reaction chamber where the tube chemical vapor deposition takes place. The temperature of the reaction for the sintering process is between 900.degree. C. to 1200.degree. C., under a total pressure of 1 atm. While maintaining a constant temperature for 1 to 2 hours, deposition of titanium nitride (Ti.sub.3 N.sub.4) onto titanium carbide (TiC) powder takes place. The adoption of the simple tube chemical vapor deposition technique for the present invention not only enables a mass production of homogeneously coated titanium carbide (TiC) particulates, but also further enhances the hardness and toughness as well as other mechanical properties of silicon based composites, such as a titanium carbide/silicon nitride (TiC/Si.sub.3 N.sub.4) composite.
摘要翻译：一种制备碳化钛/氮化硅（TiC / Si3N4）复合材料的管化学气相沉积方法。为了制备这种复合材料，首先用均匀的氮化钛（Ti 3 N 4）层涂覆碳化钛（TiC）。将具有适当比例的氯化钛（TiCl 4），氮（N 2），氢（H 2）的气体混合物引入到发生管化学气相沉积的反应室中。烧结过程的反应温度为900〜1200℃，总压力为1个大气压。在保持恒温1〜2小时的同时，将氮化钛（Ti 3 N 4）沉积到碳化钛（TiC）粉末上。采用本发明的简单管化学气相沉积技术不仅可以大量生产均匀涂覆的碳化钛（TiC）颗粒，而且可以进一步提高硅基复合材料的硬度和韧性以及其它机械性能，例如作为碳化钛/氮化硅（TiC / Si 3 N 4）复合体。

18. 发明授权

US5759481A Silicon nitride having a high tensile strength 失效
标题翻译：具有高拉伸强度的氮化硅
公开(公告)号：US5759481A
公开(公告)日：1998-06-02
申请号：US739107
申请日：1996-10-25
申请人： Vimal K. Pujari , Dennis M. Tracey , Michael R. Foley , Norman I. Paille , Paul J. Pelletier , Lenny C. Sales , Craig A. Willkens , Russell L. Yeckley
发明人： Vimal K. Pujari , Dennis M. Tracey , Michael R. Foley , Norman I. Paille , Paul J. Pelletier , Lenny C. Sales , Craig A. Willkens , Russell L. Yeckley
IPC分类号： C04B35/593 , C04B41/00 , C04B41/80 , C04B35/584
CPC分类号： C04B41/009 , C04B35/593 , C04B41/0072 , C04B41/80
摘要： A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.
摘要翻译：一种陶瓷体，其包含至少约80w / o的氮化硅并具有至少约800MPa的平均拉伸强度。

19. 发明授权

US5744410A High thermal conductive silicon nitride sintered body, method of producing the same and press-contacted body 失效
标题翻译：高导热氮化硅烧结体，其制造方法和压接体
公开(公告)号：US5744410A
公开(公告)日：1998-04-28
申请号：US700358
申请日：1996-10-04
申请人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
发明人： Michiyasu Komatsu , Kazuo Ikeda , Nobuyuki Mizunoya , Yoshitoshi Sato , Tatsuya Imaizumi , Kazuyuki Kondo
IPC分类号： C04B35/584 , C04B35/593 , H01L23/15
CPC分类号： H01L24/33 , C04B35/584 , C04B35/5935 , H01L23/15 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01064 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01105 , H01L2924/04953 , H01L2924/1301 , H01L2924/13034 , H01L2924/14 , H01L2924/181 , H01L2924/3025
摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt % to at most 17.5 wt % of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt % of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt % of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt % of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a .beta.-type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m.multidot.K and a three-point bending strength of at least 650 MPa at a room temperature.
摘要翻译： PCT No.PCT / JP96 / 01559 Sec。 371日期：1996年10月4日 102（e）日期1996年10月4日PCT PCT 1996年6月7日PCT公布。出版物WO97 / 00837 日本1997年1月9日本发明的高导热性氮化硅烧结体的特征在于，如果需要，以其氧化物的量含有大于7.5重量％至最多17.5重量％的稀土元素，如果需要，大多数1.0重量％的氮化铝和氧化铝中的至少一种，如果需要，0.1-3.0重量％的选自Ti，Zr，Hf，V的氧化物，碳化物，氮化物，硅化物和硼化物中的至少一种化合物，Nb，Ta，Cr，Mo和W以及0.3重量％以下的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B作为杂质阳离子元素， β型氮化硅晶体和晶界相。所述烧结体的晶界相与晶界相的结晶化合物相的比例为至少20％，孔隙率为2.5体积％以下，导热系数为80W / m×K以上，在室温下三点弯曲强度至少为650MPa。

20. 发明授权

US5705449A High-strength, high-toughness silicon nitride sinter 失效
标题翻译：高强度高韧性氮化硅烧结体
公开(公告)号：US5705449A
公开(公告)日：1998-01-06
申请号：US761206
申请日：1996-12-06
申请人： Kiyoshi Hirao , Manuel E. Brito , Shuzo Kanzaki
发明人： Kiyoshi Hirao , Manuel E. Brito , Shuzo Kanzaki
IPC分类号： C30B1/02 , C04B35/584 , C04B35/593 , C04B35/626 , C30B29/62 , C04B35/587
CPC分类号： C04B35/5935
摘要： A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.
摘要翻译：制造高强度高韧性氮化硅烧结体的方法包括以下步骤：将氮化硅粉末与烧结添加剂混合，将所得混合物作为0.1〜10体积％的种子颗粒，以该混合物具有比氮化硅粉末的平均粒径小的直径比至少为2的长径比的细长的单晶β-氮化硅颗粒，形成所得混合物以便使细长单晶β - 氮化硅颗粒作为特定方向的种子颗粒，并且加热生坯以使其密度并同时诱导单晶β-氮化硅颗粒的外延生长，以及通过该方法获得的高强度，高韧性氮化硅烧结体。

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