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11. 发明申请

US20070062825A1 Multi-chamber container 审中-公开
标题翻译：多室容器
公开(公告)号：US20070062825A1
公开(公告)日：2007-03-22
申请号：US11516719
申请日：2006-09-07
申请人： Kenji Omori , Shin-ichi Kawamura , Minoru Honda
发明人： Kenji Omori , Shin-ichi Kawamura , Minoru Honda
IPC分类号： B65D25/08
CPC分类号： A61J1/2093 , A61J1/2024 , A61M2207/00 , B32B7/06 , B32B15/085 , B32B15/20 , B32B27/08 , B32B27/32 , B32B27/325 , B32B27/36 , B32B2255/10 , B32B2255/20 , B32B2255/205 , B32B2307/546 , B32B2307/7242 , B32B2307/748 , B32B2307/75 , B32B2435/02 , B32B2439/40 , B32B2439/62 , B32B2439/80 , B65D81/3266
摘要： A multi-chamber container having chambers formed of a film of which at least an innermost layer is a cyclic polyolefin, one chamber being partitioned from another chamber by a partition wall, and the partition wall having an easily peelable seal layer which contains a low-density polyethylene and a propylene/α-olefin copolymer. The multi-chamber container enables the contents of the chambers to be mixed together.
摘要翻译：一种多室容器，其具有由至少最内层为环状聚烯烃的膜形成的室，一个室通过分隔壁与另一室隔开，并且所述隔壁具有容易剥离的密封层，密度聚乙烯和丙烯/α-烯烃共聚物。多室容器使得室的内容物可以混合在一起。

12. 发明授权

US07028673B2 Evaporative fuel adsorption device 失效
标题翻译：蒸发燃料吸附装置
公开(公告)号：US07028673B2
公开(公告)日：2006-04-18
申请号：US11111826
申请日：2005-04-22
申请人： Takaaki Itou , Koichi Hoshi , Kouichi Oda , Minoru Honda , Hideki Suzuki , Toshiki Annoura , Masahiro Mochizuki , Futaba Kanehira
发明人： Takaaki Itou , Koichi Hoshi , Kouichi Oda , Minoru Honda , Hideki Suzuki , Toshiki Annoura , Masahiro Mochizuki , Futaba Kanehira
IPC分类号： F02M37/04
CPC分类号： F02M35/10281 , F02M33/02 , F02M35/02 , F02M35/10052 , F02M35/112
摘要： An evaporative fuel adsorbent 32, which adsorbs evaporative fuel, is positioned substantially parallel to a sidewall surface 30 of a surge tank 22. A retention member 34 is positioned between the sidewall surface 22 and evaporative fuel adsorbent 32 to prevent oil, which runs down on the sidewall surface 22, from adhering to the evaporative fuel adsorbent 32. The evaporative fuel adsorbent 32 is mounted on the sidewall surface 30 of the surge tank 22 via the retention member 34.
摘要翻译：吸附蒸发燃料的蒸发燃料吸附剂32基本平行于稳压罐22的侧壁表面30定位。保持构件34位于侧壁表面22和蒸发燃料吸附剂32之间，以防止在侧壁表面22上向下流动的油粘附到蒸发燃料吸附剂32上。蒸发燃料吸附剂32通过保持构件34安装在缓冲罐22的侧壁表面30上。

13. 发明授权

US06849542B2 Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives 有权
标题翻译：一种半导体器件的制造方法，其包括用包含固定的研磨剂的磨石进行平坦化
公开(公告)号：US06849542B2
公开(公告)日：2005-02-01
申请号：US10272831
申请日：2002-10-18
申请人： Soichi Katagiri , Ui Yamaguchi , Seiichi Kondo , Kan Yasui , Masahiro Kaise , Minoru Honda
发明人： Soichi Katagiri , Ui Yamaguchi , Seiichi Kondo , Kan Yasui , Masahiro Kaise , Minoru Honda
IPC分类号： B24B57/02 , B24D3/32 , B24D3/34 , B24D7/06 , H01L21/304 , H01L21/321 , H01L21/463
CPC分类号： B24B37/245 , B24B37/042 , B24B37/22 , B24B57/02 , B24D3/32 , B24D3/344 , B24D7/063 , H01L21/3212
摘要： The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstone 10 having a plurality of polygonal segments 20, which comprises abrasive 23 that is bonded together with resin 24 and contains pores 22. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.
摘要翻译：本发明提供一种制造具有减少的凹陷和侵蚀的半导体器件的方法。在这种制造半导体器件的方法中，通过在表面上相对移动具有凸/凹图案的衬底和将抛光工具上的衬底的凸/凹表面压在一起的抛光工具，使凸/凹图案平坦化。抛光工具设置有具有多个多边形节段20的磨石10，磨石10包括与树脂24结合并包含孔22的磨料23。多边形节段被布置成使得三个或更多个多边形节段的角部不位于靠近对方

14. 发明申请

US20120315745A1 CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS 审中-公开
标题翻译：晶体硅薄膜成型方法和等离子体CVD装置
公开(公告)号：US20120315745A1
公开(公告)日：2012-12-13
申请号：US13499150
申请日：2010-09-28
申请人： Daisuke Katayama , Minoru Honda , Masayuki Kohno , Toshio Nakanishi
发明人： Daisuke Katayama , Minoru Honda , Masayuki Kohno , Toshio Nakanishi
IPC分类号： H01L21/20 , C23C16/511
CPC分类号： C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01J2237/3321 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H05H1/46
摘要： A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as SinH2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.
摘要翻译：通过进行等离子体CVD工艺，能够以高成膜速度形成高质量的结晶硅膜。在通过使用等离子体CVD装置通过具有多个孔的平面天线将微波引入处理室并产生等离子体的用于在处理对象物体的表面上形成结晶硅膜的结晶硅膜形成方法中，硅膜形成方法包括通过微波激发含有表示为SinH2n + 2（n等于或大于2）的硅化合物的成膜气体来产生等离子体; 以及通过用等离子体进行等离子体CVD处理，在处理对象基板的表面上沉积晶体硅膜。

15. 发明申请

US20120126376A1 SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE 审中-公开
标题翻译：二氧化硅膜及其制造方法，计算机可读存储介质和等离子体CVD装置
公开(公告)号：US20120126376A1
公开(公告)日：2012-05-24
申请号：US13121606
申请日：2009-09-29
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
IPC分类号： H01L29/06 , C23C16/52 , H01L21/316 , C23C16/511
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01L21/02164 , H01L21/02274 , H01L29/40114 , H01L29/40117 , H01L29/513 , H01L29/518 , H01L29/792
摘要： To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 in the silicon dioxide film, as measured by using secondary ion mass spectrometry (SIMS), a plasma CVD, which generate plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures and forms a film, is performed by setting the pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa and by using a gas of a compound composed of silicon atoms and chlorine atoms and an oxygen containing gas.
摘要翻译：为了通过使用二次离子质谱法（SIMS）测量在二氧化硅膜中产生低于或等于9.9×1020原子/ cm3的氢原子浓度的二氧化硅膜，通过引入微波产生等离子体的等离子体CVD 通过使用具有多个孔并形成膜的平面天线的处理室，通过将处理室内的压力设定在0.1Pa〜6.7Pa的范围内，通过使用由硅原子构成的化合物的气体和氯原子和含氧气体。

16. 发明授权

US08158535B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08158535B2
公开(公告)日：2012-04-17
申请号：US12521666
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

17. 发明申请

US20100283097A1 MOS SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译： MOS半导体存储器件
公开(公告)号：US20100283097A1
公开(公告)日：2010-11-11
申请号：US12665534
申请日：2008-06-20
申请人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
发明人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L29/792 , C23C16/308 , C23C16/345 , G11C11/5628 , G11C16/0466 , H01L27/11568 , H01L27/11578 , H01L27/11582 , H01L29/4234 , H01L29/513 , H01L29/7926
摘要： The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film 111 and fifth insulating film 115 having large bandgaps 111a and 115a, a third insulating film 113 having the smallest bandgap 113a, and a second insulating film 112 and fourth insulating film 114 interposed between the third insulating film 113 and the first and fifth insulating films 111 and 115, respectively, and having intermediate bandgaps 112a and 114a.
摘要翻译：本发明提供一种实现优异的数据保持特性的MOS半导体存储器件，同时还实现了高速数据写入性能，低功率操作性能和高可靠性。 MOS半导体存储器件601包括具有较大带隙111a和115a的第一绝缘膜111和第五绝缘膜115，具有最小带隙113a的第三绝缘膜113和介于第三绝缘膜113之间的第二绝缘膜112和第四绝缘膜114。绝缘膜113和第一和第五绝缘膜111和115，并具有中间带隙112a和114a。

18. 发明申请

US20100219094A1 CONTAINER 审中-公开
标题翻译：容器
公开(公告)号：US20100219094A1
公开(公告)日：2010-09-02
申请号：US12302006
申请日：2007-05-22
申请人： Masashi Moteki , Minoru Honda , Kenji Omori
发明人： Masashi Moteki , Minoru Honda , Kenji Omori
IPC分类号： B65D73/00
CPC分类号： A61J1/10 , A61J1/2024 , A61J1/2093 , B32B7/05 , B32B15/08 , B32B27/306 , B32B27/32 , B32B27/34 , B32B27/365 , B32B2255/10 , B32B2255/20 , B32B2255/205 , B32B2307/7244 , B32B2439/46 , B32B2439/80 , B32B2535/00 , B65D81/24 , B65D81/3266
摘要： A drug container with no need to peel a gas-barrier film or with no need to contain a desiccant, an oxygen absorbent or the like, in which the contents therein can be seen by the naked eyes. The container (10) comprises a front sheet (20) and a rear sheet (22), the front sheet (20) and the rear sheet (22) being fusion-bonded each other so as to form a space (14) therebetween, wherein the front sheet is constituted of a multilayered film having a linear-polyolefin layer as the outermost layer, wherein the rear sheet is constituted of a multilayered film having at least one selected from a group consisting of a metal foil, a vapor-deposited metal layer and a vapor-deposited inorganic layer, and wherein a transparent covering sheet (24) comprising a film having a vapor-deposited metal oxide layer is fusion-bonded to the front sheet so that the entire outer surface of at least a part of the front sheet which forms the space can be covered with the transparent covering sheet (24).
摘要翻译：不需要剥离阻气膜的药物容器，也可以不含有通过肉眼可以看到内容物的干燥剂，氧吸收剂等。容器（10）包括前片（20）和后片（22），前片（20）和后片（22）彼此熔合以在其间形成间隙（14）其特征在于，所述前片由具有直链状聚烯烃层作为最外层的多层膜构成，所述后片由具有选自金属箔，气相沉积金属层和气相沉积无机层，并且其中将包含具有气相沉积金属氧化物层的膜的透明覆盖片（24）熔融粘合到前片，使得至少一部分的整个外表面可以用透明覆盖片（24）覆盖形成空间的前片。

19. 发明申请

US20090241310A1 RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING 失效
标题翻译：使用氢气进行氢气扫描的RLSA CVD沉积控制
公开(公告)号：US20090241310A1
公开(公告)日：2009-10-01
申请号：US12059100
申请日：2008-03-31
申请人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
发明人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
IPC分类号： H01L21/00 , B66C17/08
CPC分类号： C23C16/345 , C23C16/511 , H01J37/32192 , H01J37/3222 , Y10T29/41
摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.
摘要翻译：微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

20. 发明申请

US20070139021A1 Power supply circuit 有权
标题翻译：电源电路
公开(公告)号：US20070139021A1
公开(公告)日：2007-06-21
申请号：US11639280
申请日：2006-12-15
申请人： Tomokazu Kojima , Minoru Honda
发明人： Tomokazu Kojima , Minoru Honda
IPC分类号： G05F1/70
CPC分类号： H03F3/45475 , H03F1/56 , H03F2203/45674
摘要： an operational amplifier generates a power supply potential from a reference potential. An impedance adjuster adjusts an output impedance of the operational amplifier in accordance with a control signal. A charge accumulator accumulates an output charge of the operational amplifier whose impedance is adjusted by the impedance adjuster. A comparator compares an output voltage of the operational amplifier before the impedance adjustment by the impedance adjuster and the output voltage of the operational amplifier after the impedance adjustment by the impedance adjuster to each other, and the comparator further generates the control signal in accordance with a result of the comparison so as to output the generated control signal to the impedance adjuster.
摘要翻译：运算放大器从参考电位产生电源电位。阻抗调节器根据控制信号调整运算放大器的输出阻抗。电荷累加器累积运算放大器的输出电荷，其阻抗由阻抗调节器调节。比较器在通过阻抗调节器进行的阻抗调整之后，将由阻抗调节器进行的阻抗调整之前的运算放大器的输出电压与运算放大器的输出电压进行比较，并且比较器进一步根据比较结果，将所生成的控制信号输出到阻抗调节器。

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