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1. 发明授权

US08247331B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08247331B2
公开(公告)日：2012-08-21
申请号：US12521645
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/321
CPC分类号： H01L21/28202 , H01J37/32192 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

2. 发明授权

US07960293B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US07960293B2
公开(公告)日：2011-06-14
申请号：US12302810
申请日：2007-05-30
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L21/3185 , H01L29/518
摘要： A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.
摘要翻译：一种形成绝缘膜的方法包括：在硅表面上形成氮化硅膜，使其表面上露出硅的靶基板经受硅氮化处理，通过加热设置有硅的氮化硅膜，氮化硅膜在N2O气氛中氮化氮氧化硅膜。

3. 发明申请

US20100323529A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20100323529A1
公开(公告)日：2010-12-23
申请号：US12521645
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/314 , B05C11/00
CPC分类号： H01L21/28202 , H01J37/32192 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

4. 发明申请

US20090197403A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20090197403A1
公开(公告)日：2009-08-06
申请号：US12302810
申请日：2007-05-30
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/336
CPC分类号： H01L21/28202 , H01L21/3185 , H01L29/518
摘要： A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.
摘要翻译：一种形成绝缘膜的方法包括：在硅表面上形成氮化硅膜，使其表面上露出硅的靶基板经受硅氮化处理，通过加热设置有硅的氮化硅膜，氮化硅膜在N2O气氛中氮化氮氧化硅膜。

5. 发明授权

US08158535B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08158535B2
公开(公告)日：2012-04-17
申请号：US12521666
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

6. 发明申请

US20100323531A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20100323531A1
公开(公告)日：2010-12-23
申请号：US12521666
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/314
CPC分类号： H01L21/28202 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

7. 发明授权

US07915177B2 Method of forming gate insulation film, semiconductor device, and computer recording medium 失效
标题翻译：形成栅极绝缘膜，半导体器件和计算机记录介质的方法
公开(公告)号：US07915177B2
公开(公告)日：2011-03-29
申请号：US12694900
申请日：2010-01-27
申请人： Tatsuo Nishita , Shuuichi Ishizuka , Yutaka Fujino , Toshio Nakanishi , Yoshihiro Sato
发明人： Tatsuo Nishita , Shuuichi Ishizuka , Yutaka Fujino , Toshio Nakanishi , Yoshihiro Sato
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译：在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。

8. 发明申请

US20110124202A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20110124202A1
公开(公告)日：2011-05-26
申请号：US13019093
申请日：2011-02-01
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

9. 发明申请

US20070059944A1 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20070059944A1
公开(公告)日：2007-03-15
申请号：US11514236
申请日：2006-09-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/471
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

10. 发明申请

US20100130023A1 METHOD OF FORMING GATE INSULATION FILM, SEMICONDUCTOR DEVICE, AND COMPUTER RECORDING MEDIUM 失效
标题翻译：形成绝缘膜的方法，半导体器件和计算机记录介质
公开(公告)号：US20100130023A1
公开(公告)日：2010-05-27
申请号：US12694900
申请日：2010-01-27
申请人： Tatsuo Nishita , Shuuichi Ishizuka , Yutaka Fujino , Toshio Nakanishi , Yoshihiro Sato
发明人： Tatsuo Nishita , Shuuichi Ishizuka , Yutaka Fujino , Toshio Nakanishi , Yoshihiro Sato
IPC分类号： H01L21/3115
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译：在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。

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