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    • 12. 发明申请
    • Sulphonium Salt Initiators
    • 锍盐引发剂
    • US20090208872A1
    • 2009-08-20
    • US11922444
    • 2006-06-21
    • Jean-Pierre WolfAttila LatikaJean-Luc BirbaumStephan IlgPascal Hayoz
    • Jean-Pierre WolfAttila LatikaJean-Luc BirbaumStephan IlgPascal Hayoz
    • G03F7/20G03F7/004C07D209/88C07C321/30
    • C07D209/88B33Y70/00C07C309/06C07C381/12G03F7/0045G03F7/038Y10S430/122
    • Compounds of the formula (I), (II), (III), (IV) and wherein, R is hydrogen, C1-C20alkyl; C2-C20alkyl interrupted by one or more O; is -L-X—R2 or -L-R2; R1 has for example one of the meanings as given for R; R2 is a monovalent sensitizer or photoinitiator moiety; Ar1 and Ar2 for example independently of one another are phenyl substituted by C1-C20alkyl, halogen or OR3; or are unsubstituted naphthyl, anthryl, phenanthryl or biphenylyl; or are naphthyl, anthryl, phenanthryl or biphenylyl substituted by C1-C20alkyl, OH or OR3; or are —Ar4-A-Ar3; Ar3 is unsubstituted phenyl naphthyl, anthryl, phenanthryl or biphenylyl; or is phenyl, naphthyl, anthryl, phenanthryl or biphenylyl substituted by C1-C20alkyl, OR3 or benzoyl; Ar4 is phenylene, naphthylene, anthrylene or phenanthrylene; A is a direct bond, S, O or C1-C20alkylene; X is CO, C(O)O, OC(O), O, S or NR3; L is C1-C20alkylene or C2-C20alkylene interrupted by one or more O; R3 is C1-C20alkyl or C1-C20hydroxyalkyl; and Y is an anion, are suitable as photolatent acid generators.
    • 式(I),(II),(III),(IV)的化合物,其中R是氢,C 1 -C 20烷基; 被一个或多个O中断的C 2 -C 20烷基; 是-L-X-R2或-L-R2; R1具有例如R给出的含义之一; R2是单价敏化剂或光引发剂部分; Ar 1和Ar 2例如彼此独立地是被C 1 -C 20烷基,卤素或OR 3取代的苯基; 或未取代的萘基,蒽基,菲基或联苯基; 或被C 1 -C 20烷基,OH或OR 3取代的萘基,蒽基,菲基或联苯基; 或为-Ar4-A-Ar3; Ar 3是未取代的苯基萘基,蒽基,菲基或联苯基; 或由C 1 -C 20烷基,OR 3或苯甲酰基取代的苯基,萘基,蒽基,菲基或联苯基; Ar4是亚苯基,亚萘基,亚蒽基或菲基; A是直接键合,S,O或C1-C20亚烷基; X是CO,C(O)O,OC(O),O,S或NR 3; L是被一个或多个O中断的C1-C20亚烷基或C2-C20亚烷基; R3是C1-C20烷基或C1-C20羟烷基; 并且Y是阴离子,适合作为光潜酸产生剂。
    • 15. 发明授权
    • Oxime derivatives and the use thereof as latent acids
    • 肟衍生物及其作为潜伏酸的用途
    • US06261738B1
    • 2001-07-17
    • US09533952
    • 2000-03-23
    • Toshikage AsakuraHitoshi YamatoMasaki OhwaJean-Luc BirbaumKurt DietlikerJunichi Tanabe
    • Toshikage AsakuraHitoshi YamatoMasaki OhwaJean-Luc BirbaumKurt DietlikerJunichi Tanabe
    • G03G7004
    • G03F7/039C07C251/62C07C309/00C07C309/65C07C317/32C07C323/47C07C381/00C07C2602/42C07D319/18C07D333/22G03F7/0045Y10S430/12
    • Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as phototsensitive acid-donors in chemically amplified resist formulations.
    • 式I,II和III的化合物,其中R1是例如氢,C1-C12烷基,C3-C30环烷基,C2-C12链烯基,C4-C8环烯基,苯基,未取代或取代的萘基,蒽基或菲基,未取代或取代的, 未取代或取代的杂芳基; 其中除氢之外的所有基团R1可以另外被具有在酸作用下切割的-O-C键或-O-Si键的基团取代; R'1是例如亚苯基,亚萘基,亚二苯基或氧联二苯基,其中这些基团是未取代的或被取代的; R2是卤素或C1-C10卤代烷基; R3是例如C1-C18烷基磺酰基,苯基磺酰基,萘基磺酰基,蒽磺酰基或菲基磺酰基,其中基团是未取代的或被取代的,或者R3是例如。 C 2 -C 6卤代烷酰基或卤代苯甲酰基,R'3是例如亚苯基二磺酰基,萘基二磺酰基,二苯基二磺酰基或氧基二苯基二磺酰基,其中这些基团是未取代的或被取代的,X是卤素; 在化学放大抗蚀剂配方中特别适合作为光敏酸供体。