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11. 发明申请

US20110237085A1 METHODS OF MODIFYING INTERLAYER ADHESION 有权
标题翻译：修改层间粘合的方法
公开(公告)号：US20110237085A1
公开(公告)日：2011-09-29
申请号：US13152865
申请日：2011-06-03
申请人： FRANCIMAR CAMPANA SCHMITT , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
发明人： FRANCIMAR CAMPANA SCHMITT , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

12. 发明申请

US20110055491A1 SIMULTANEOUS SWITCHING OF MULTIPLE TIME SLOTS IN AN OPTICAL NETWORK NODE 有权
标题翻译：光网络节点中多个时隙的同时切换
公开(公告)号：US20110055491A1
公开(公告)日：2011-03-03
申请号：US12550497
申请日：2009-08-31
申请人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
发明人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
IPC分类号： G06F12/00
CPC分类号： H04L49/9036
摘要： A switching frame buffer is described in which data units within a sequence of time slots, of a frame, may be simultaneously input and output at ports of the switching frame buffer. In one implementation, a write port may receive data units within a single cycle of the switch. A number of memories may be provided, where first selected ones of the memories constitute memory groups and second selected ones of the memories constitute a memory subsets, each of the memory groups including a corresponding one of the memory subsets. The write port may supply each of a number of copies of the data units to a corresponding one of the memory subsets. Multiplexers may be associated with the groups of the memories and a read port may receive one of the copies of a number of the data units from different ones of the multiplexers.
摘要翻译：描述了一种切换帧缓冲器，其中帧的时隙序列内的数据单元可以同时在切换帧缓冲器的端口输入和输出。在一个实现中，写入端口可以在交换机的单个周期内接收数据单元。可以提供多个存储器，其中存储器中的第一选定存储器构成存储器组，并且存储器中的第二选定存储器构成存储器子集，每个存储器组包括对应的一个存储器子集。写入端口可以将数据单元的多个副本中的每一个提供给相应的一个存储器子集。多路复用器可以与存储器组相关联，并且读取端口可以从不同的多路复用器接收多个数据单元的一个副本。

13. 发明授权

US07226876B2 Method of modifying interlayer adhesion 有权
标题翻译：修饰层间粘合的方法
公开(公告)号：US07226876B2
公开(公告)日：2007-06-05
申请号：US11126910
申请日：2005-05-11
申请人： Francimar Campana Schmitt , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
发明人： Francimar Campana Schmitt , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

14. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

15. 发明授权

US07087497B2 Low-thermal-budget gapfill process 有权
标题翻译：低热量预算的填隙过程
公开(公告)号：US07087497B2
公开(公告)日：2006-08-08
申请号：US10793559
申请日：2004-03-04
申请人： Zheng Yuan , Reza Arghavani , Ellie Y Yieh , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Ellie Y Yieh , Shankar Venkataraman
IPC分类号： H01L21/336
CPC分类号： H01L21/76224 , C23C16/403 , C23C16/45536 , C23C16/45544 , H01J37/32009 , H01L21/02178 , H01L21/0228 , H01L21/32055 , H01L21/67017 , H01L21/6719 , H01L21/763
摘要： A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.
摘要翻译：提供了一种低热预算的间隙填充方法，用于填充在应变硅衬底上形成的两个相邻隆起特征之间的间隙，作为浅沟槽隔离工艺的一部分。使用原子层沉积沉积电绝缘衬垫，并且将多晶硅沉积在电绝缘衬垫上，其中两个阶段在低于700℃的温度下进行。

16. 发明申请

US20050211265A1 Method for cleaning a process chamber 审中-公开
标题翻译：清洁处理室的方法
公开(公告)号：US20050211265A1
公开(公告)日：2005-09-29
申请号：US11132895
申请日：2005-05-19
申请人： Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
发明人： Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
IPC分类号： B08B7/00 , C23C16/44 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/00 , Y10S134/902 , Y10S438/905
摘要： Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
摘要翻译：介绍了沉积室清洗方法和设备。清洁方法包括使用远程等离子体源从清洁气体产生反应物质以清洁沉积室。在室清洁期间可以使用氦气或氩气流。射频功率还可以与远程等离子体源组合使用以清洁沉积室。

17. 发明授权

US06918012B2 Streamlined cache coherency protocol system and method for a multiple processor single chip device 有权
标题翻译：用于多处理器单芯片器件的简化高速缓存一致性协议系统和方法
公开(公告)号：US06918012B2
公开(公告)日：2005-07-12
申请号：US09942328
申请日：2001-08-28
申请人： Padmanabha I. Venkitakrishnan , Shankar Venkataraman , Stuart C. Siu
发明人： Padmanabha I. Venkitakrishnan , Shankar Venkataraman , Stuart C. Siu
IPC分类号： G06F12/08 , G06F12/14
CPC分类号： G06F12/0831
摘要： A streamlined cache coherency protocol system and method for a multiple processor single chip device. There are three primary memory unit (e.g., a cache line) states (modified, shared, and invalid) and three intermediate memory unit pending states. The pending states are used by the present invention to prevent race conditions that may develop during the completion of a transaction. The pending states “lock out” the memory unit (e.g., prevent access by other agents to a cache line) whose state is in transition between two primary states, thus ensuring coherency protocol correctness. Transitions between states are governed by a series of request and reply or acknowledgment messages. The memory unit is placed in a pending state while appropriate measures are taken to ensure access takes place at an appropriate time. For example, a modification occurs only when other agents can not access the particular memory unit (e.g., a cache line).
摘要翻译：用于多处理器单芯片器件的精简缓存一致性协议系统和方法。存在三个主存储器单元（例如，高速缓存行）状态（修改，共享和无效）和三个中间存储器单元挂起状态。本发明使用待决状态来防止在交易完成期间可能发展的种族条件。挂起状态“锁定”其状态在两个主状态之间转换的存储器单元（例如，阻止其他代理到高速缓存行的访问），从而确保一致性协议的正确性。状态之间的转换由一系列请求和回复或确认消息来管理。存储单元处于待机状态，同时采取适当措施确保在适当的时间进行访问。例如，仅当其他代理不能访问特定存储器单元（例如，高速缓存行）时才进行修改。

18. 发明授权

US06814087B2 Accelerated plasma clean 有权
标题翻译：加速等离子清洁
公开(公告)号：US06814087B2
公开(公告)日：2004-11-09
申请号：US10115665
申请日：2002-04-03
申请人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B700
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of removing residue from a substrate processing chamber. In one embodiment the method comprises flowing an inert gas into a remote plasma chamber and forming a plasma within the chamber; maintaining the plasma while creating a plurality of reactive fluorine species by flowing a fluorine-containing gas into the remote plasma chamber and increasing a flow rate of a fluorine-containing gas from a first flow rate to a second flow rate higher than the first flow rate; and introducing the plurality of reactive fluorine species into the substrate processing chamber.

19. 发明授权

US06591850B2 Method and apparatus for fluid flow control 失效
公开(公告)号：US06591850B2
公开(公告)日：2003-07-15
申请号：US09895104
申请日：2001-06-29
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
IPC分类号： G05D1100
CPC分类号： G05D7/0635 , Y10T137/0363 , Y10T137/2524 , Y10T137/2529 , Y10T137/265
摘要： The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.

20. 发明授权

US08894767B2 Flow control features of CVD chambers 有权
标题翻译： CVD室的流量控制特征
公开(公告)号：US08894767B2
公开(公告)日：2014-11-25
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00 , C23F1/00 , C23C16/455 , H01J37/32 , C23C16/452
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

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