专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06188543B1 Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US06188543B1
公开(公告)日：2001-02-13
申请号：US09063791
申请日：1998-04-22
申请人： Koichi Terunuma , Yasufumi Uno , Tetsuya Mino , Koji Matsukuma
发明人： Koichi Terunuma , Yasufumi Uno , Tetsuya Mino , Koji Matsukuma
IPC分类号： G11B531
CPC分类号： G11B5/3967 , G11B5/012 , G11B5/3109 , G11B5/3113
摘要： A thin film magnetic head includes a recording gap layer, and lower and upper magnetic pole layers made of polycrystalline magnetic substances, deposited to sandwich the recording gap layer. An average particle size D of crystal substances at least in a region of the upper magnetic pole layer, near the recording gap layer with respect to a recording track width W is set to D≦W/20.
摘要翻译：薄膜磁头包括记录间隙层和由多晶磁性物质制成的下部和上部磁极层，沉积以夹持记录间隙层。至少在上磁极层的记录间隙层的相对于记录磁迹宽度W附近的晶体物质的平均粒径D设定为D <= W / 20。

12. 发明授权

US6163437A Magnetic head with spin valve effect magnetoresistive element and its manufacturing method 失效
标题翻译：磁头采用自旋阀效应磁阻元件及其制造方法
公开(公告)号：US6163437A
公开(公告)日：2000-12-19
申请号：US44886
申请日：1998-03-20
申请人： Kenji Inage , Toshiaki Maeda , Jun Shouji , Koichi Terunuma , Masanori Sakai
发明人： Kenji Inage , Toshiaki Maeda , Jun Shouji , Koichi Terunuma , Masanori Sakai
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40 , H01F10/00 , H01F10/08 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3166 , G11B5/3903 , G11B5/3967 , G11B5/40 , G11B2005/3996
摘要： A magnetic head with a spin valve effect MR element and a method of manufacturing the head. A plurality of spin valve effect MR elements on a substrate are formed, a plurality of pairs of lead conductors connected with the respective spin valve effect MR elements on the substrate are formed, and then a plurality of protection circuits of magnetization inversion connected between the respective pairs of lead conductors on the substrate are formed. Each of the protection circuits is constituted so as to turn on when it receives an energy with a level at which the pinned direction inversion in each of the spin valve effect MR elements occurs.
摘要翻译：具有旋转阀效应MR元件的磁头和制造头部的方法。在衬底上形成多个自旋阀效应MR元件，形成多个与各个自旋阀连接的引导导体，在衬底上形成MR元件，然后将多个磁化反转保护电路连接在相应的形成基板上的导体导体对。每个保护电路被构造成当其接收到具有在每个自旋阀效应MR元件中发生销钉方向反转的水平的能量时接通能量。

13. 发明授权

US5999378A Magnetoresistance effect head having a giant magnetoresistance effect film 失效
标题翻译：具有巨磁阻效应膜的磁阻效应头
公开(公告)号：US5999378A
公开(公告)日：1999-12-07
申请号：US980871
申请日：1997-12-01
申请人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
发明人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.
摘要翻译：磁阻效应头包括巨磁阻效应膜，一对向巨磁电阻效应头供电的引线，以及由结晶软磁膜制成的上下磁屏蔽层，并设置成保持巨磁阻效应膜其间插入有磁隙膜，其中确定巨磁阻效应膜的下层的表面粗糙度，使得表面粗糙度的中心周期L满足L> 70nm。

14. 发明授权

US07506430B2 Process to manufacture narrow track CPP head with bias cancellation 有权
标题翻译：制造具有偏压消除的窄轨CPP头的工艺
公开(公告)号：US07506430B2
公开(公告)日：2009-03-24
申请号：US11588563
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

15. 发明授权

US07403358B2 Thin film magnetic head, magnetic head device, magnetic recording/reproducing device and method for fabricating a thin film magnetic head 失效
标题翻译：薄膜磁头，磁头装置，磁记录/重放装置以及用于制造薄膜磁头的方法
公开(公告)号：US07403358B2
公开(公告)日：2008-07-22
申请号：US11227126
申请日：2005-09-16
申请人： Koichi Terunuma , Koji Shimazawa , Akifumi Kamijima
发明人： Koichi Terunuma , Koji Shimazawa , Akifumi Kamijima
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903 , G11B5/3932 , G11B5/3967 , Y10T29/49046
摘要： A magnetoresistive effective film responds commensurate with an external magnetic field. Magnetic domain-controlling films apply a perpendicular biasing magnetic field to the magnetoresistive effective film. The forefronts of first electrode films constituting a pair of electrode films are overlaid on the magnetoresistive effective film, and the forefront surfaces of the first electrode films are risen at an inner angle of θ1. Second electrode films are overlaid on the first electrode films, and the forefront surfaces of the second electrode films are risen at an inner angle of θ2 smaller than the inner angle θ1.
摘要翻译：磁阻有效膜响应与外部磁场相称。磁畴控制膜对磁阻有效膜施加垂直偏置磁场。构成一对电极膜的第一电极膜的前面覆盖在磁阻有效膜上，并且第一电极膜的最前面以内角θ1升高。第二电极膜覆盖在第一电极膜上，并且第二电极膜的最前端表面以小于内角θ1的内角θ2升高。

16. 发明授权

US07134184B2 Process of manufacturing a narrow track CCP head with bias cancellation 失效
标题翻译：制造具有偏置消除的窄轨CCP头的过程
公开(公告)号：US07134184B2
公开(公告)日：2006-11-14
申请号：US10706838
申请日：2003-11-12
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/23 , G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

17. 发明授权

US07082673B2 Method of manufacturing magnetoresistive device capable of preventing a sense current from flowing into dead regions of a magnetoresistive element, and method of manufacturing thin-film magnetic head 失效
标题翻译：制造能够防止感测电流流入磁阻元件的死区的磁阻器件的制造方法以及制造薄膜磁头的方法
公开(公告)号：US07082673B2
公开(公告)日：2006-08-01
申请号：US10670470
申请日：2003-09-26
申请人： Koji Shimazawa , Koichi Terunuma
发明人： Koji Shimazawa , Koichi Terunuma
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/4806 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresisive device comprises: an MR element having two surfaces that face toward opposite directions and two side portions that face toward opposite directions; two bias field applying layers that are located adjacent to the side portions of the MR element and apply a longitudinal bias magnetic field to the MR element; and two electrode layers that are located adjacent to one of the surfaces of each of the bias field applying layers and feed a sense current to the MR element. The electrode layers overlap the one of the surfaces of the MR element. The magnetoresistive device further comprises two nonconductive layers that are located between the one of the surfaces of the MR element and the two electrode layers and located in two regions that include ends of the MR element near the side portions thereof, the two regions being parts of the region in which the electrode layers face toward the one of the surfaces of the MR element.
摘要翻译：磁感应装置包括：MR元件，其具有面向相反方向的两个表面和面向相反方向的两个侧面部分; 两个偏置场施加层，其位于与MR元件的侧部相邻并且向MR元件施加纵向偏置磁场; 以及两个电极层，其位于每个偏置场施加层的一个表面附近，并将感测电流馈送到MR元件。电极层与MR元件的一个表面重叠。磁阻器件还包括位于MR元件的一个表面和两个电极层之间的两个非导电层，并且位于两个区域中，该两个区域包括MR元件的靠近其侧部的端部，两个区域是电极层朝向MR元件的一个表面的区域。

18. 发明授权

US07027271B2 Magnetoresistive device in a thin-film magnetic head and method of manufacturing same having particular electrode overlay configuration 失效
标题翻译：薄膜磁头中的磁阻器件及其具有特定电极覆盖结构的制造方法
公开(公告)号：US07027271B2
公开(公告)日：2006-04-11
申请号：US09911408
申请日：2001-07-25
申请人： Kenji Inage , Yoshihiro Kudo , Ken-ichi Takano , Koichi Terunuma , Yuzuru Iwai
发明人： Kenji Inage , Yoshihiro Kudo , Ken-ichi Takano , Koichi Terunuma , Yuzuru Iwai
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08
摘要： A magnetoresisive device comprises an MR element, bias field applying layers located adjacent to the side portions of the MR element, and two electrode layers that feed a sense current to the MR element. The electrode layers overlap one of the surfaces of the MR element. The total overlap amount of the two electrode layers is smaller than 0.3 μm. The MR element is a spin-valve GMR element. The MR element incorporates a base layer, a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a cap layer that are stacked in this order. The pinned layer includes a nonmagnetic spacer layer, and two ferromagnetic layers that sandwich this spacer layer.
摘要翻译：磁感应装置包括MR元件，邻近MR元件的侧部定位的偏置场施加层和向MR元件馈送感测电流的两个电极层。电极层与MR元件的一个表面重叠。两个电极层的总重叠量小于0.3μm。 MR元件是自旋阀GMR元件。 MR元件包括依次层叠的基底层，自由层，间隔层，钉扎层，反铁磁层和盖层。被钉扎层包括非磁性间隔层和夹住该间隔层的两个铁磁层。

19. 发明授权

US06927950B2 Thin-film magnetic head and method of manufacturing same, head gimbal assembly, and hard disk drive 有权
标题翻译：薄膜磁头及其制造方法，磁头万向节组件和硬盘驱动器
公开(公告)号：US06927950B2
公开(公告)日：2005-08-09
申请号：US10193316
申请日：2002-07-12
申请人： Noriyuki Ito , Kosuke Tanaka , Koichi Terunuma
发明人： Noriyuki Ito , Kosuke Tanaka , Koichi Terunuma
IPC分类号： G11B5/39 , G11B5/596
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/59683 , G11B2005/3996
摘要： A read head comprises an MR element, two bias field applying layers, and two conductive layers. The two bias field applying layers are adjacent to both side portions of the MR element, and apply a bias magnetic field to the MR element along the longitudinal direction. The two conductive layers feed a sense current to the MR element, each of the conductive layers being disposed to be adjacent to one of surfaces of each of the bias field applying layers and to overlap one of surfaces of the MR element. The conductive layers are each made of a gold alloy having a resistivity of less than 22 μΩ·cm and a hardness as high as or higher than the hardness of a material used for making the bias field applying layers.
摘要翻译：读头包括MR元件，两个偏置场施加层和两个导电层。两个偏置场施加层与MR元件的两侧部分相邻，并且沿MR方向向MR元件施加偏置磁场。两个导电层将感应电流馈送到MR元件，每个导电层被设置为与每个偏置场施加层的一个表面相邻并且与MR元件的一个表面重叠。导电层各自由电阻率小于22μΩ·cm的金合金和高于或高于用于制造偏压场施加层的材料的硬度的硬度制成。

20. 发明授权

US06757142B1 Magnetoresistive effect element with a magnetic sensing region and outside regions thereof, and manufacturing method of the element 有权
标题翻译：具有磁感应区域及其外部区域的磁阻效应元件及元件的制造方法
公开(公告)号：US06757142B1
公开(公告)日：2004-06-29
申请号：US09349119
申请日：1999-07-08
申请人： Koichi Terunuma
发明人： Koichi Terunuma
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903
摘要： A MR element with a magnetic sensing region and outside regions thereof which locate outside the magnetic sensing region along a track width direction, includes a multi-layered structure with an anti-ferromagnetic thin-film layer, a first ferromagnetic thin-film layer constituted by a single layer of ferromagnetic material or by multi layers of ferromagnetic material, a non-magnetic metal thin-film layer and a second ferromagnetic thin-film layer constituted by a single layer of ferromagnetic material or by multi layers of ferromagnetic material which are sequentially formed on a substrate. The all layers in the multi-layered structure exist in the magnetic sensing region, and at least the anti-ferromagnetic thin-film layer with its initial thickness exists in the outside regions.
摘要翻译：具有磁感应区域及其外部区域的MR元件沿着磁道宽度方向位于磁感应区域的外侧，包括具有反铁磁性薄膜层的多层结构，由第一铁磁性薄膜层构成的第一铁磁性薄膜层，单层铁磁材料或多层铁磁材料，非磁性金属薄膜层和由单层铁磁材料或多层铁磁材料构成的第二铁磁性薄膜层，这些层由顺序形成在基板上。多层结构中的所有层都存在于磁感应区域中，至少具有初始厚度的反铁磁性薄膜层存在于外部区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式