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    • 6. 发明授权
    • Thin-film magnetic head, thin-film magnetic head assembly, storage device, and method of manufacturing thin-film magnetic head
    • 薄膜磁头,薄膜磁头组件,存储装置以及制造薄膜磁头的方法
    • US07136263B2
    • 2006-11-14
    • US10727551
    • 2003-12-05
    • Kosuke TanakaKoji ShimazawaKoichi Terunuma
    • Kosuke TanakaKoji ShimazawaKoichi Terunuma
    • G11B5/127
    • G11B5/3906Y10T29/49052
    • A thin-film magnetic head comprises a magnetoresistive film, a pair of magnetic domain control layers for applying a bias magnetic field to the magnetoresistive film, a pair of electrode layers for supplying a current to the magnetoresistive film, first and second shield layers for shielding the magnetoresistive film, a first insulating layer disposed between the magnetoresistive film and magnetic domain control layer and the first shield layer, and a second insulating layer disposed between the magnetoresistive film and electrode layer and the second shield layer. The shield layers have a distance therebetween shorter at a position where the electrode layer and magnetic domain control layer are laminated than that at a position where the magnetoresistive film is located. While the surface of the magnetic domain control layer on the first insulating layer side at the position where the electrode film and magnetic domain control layer are laminated is taken as a reference surface, the distance from the reference surface to the surface of the electrode layer on the second insulating layer side is set shorter than the distance from the reference surface to the surface of the magnetoresistive film on the second insulating layer side.
    • 薄膜磁头包括磁阻膜,用于向磁阻膜施加偏置磁场的一对磁畴控制层,用于向磁阻膜提供电流的一对电极层,用于屏蔽的第一和第二屏蔽层 磁阻膜,设置在磁阻膜和磁畴控制层之间的第一绝缘层和第一屏蔽层,以及设置在磁阻膜与电极层和第二屏蔽层之间的第二绝缘层。 在层叠电极层和磁畴控制层的位置上,屏蔽层的距离比在磁阻膜位置处的屏蔽层之间的距离更短。 将层叠有电极膜和磁畴控制层的位置上的第一绝缘层侧的磁畴控制层的表面作为基准面,从基准面到电极层的表面的距离 第二绝缘层侧被设定为比从第二绝缘层侧的磁阻膜的基准面到表面的距离短。
    • 7. 发明授权
    • Thin film magnetic head, head gimbal assembly, and hard disk drive
    • 薄膜磁头,头万向节装配和硬盘驱动器
    • US07193822B2
    • 2007-03-20
    • US10861472
    • 2004-06-07
    • Tomoaki ShimizuKoji ShimazawaKosuke TanakaKoichi Terunuma
    • Tomoaki ShimizuKoji ShimazawaKosuke TanakaKoichi Terunuma
    • G11B5/127
    • B82Y25/00B82Y10/00G11B5/3906G11B5/3909G11B2005/0016
    • At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to-point distances in the plane where each magnetic underlayer and the corresponding bias magnetic field applying layer are mated, are substantially equalized to each other. Therefore, a coercive force Hc in an in-plane direction (direction parallel to a film surface) of each bias magnetic field applying layer can be maintained at a high level so that even when further gap narrowing or track narrowing is aimed, the bias magnetic field applying layers can act to apply an effective bias magnetic field, i.e. can act to suppress occurrence of the Barkhausen noise.
    • 在磁阻效应膜的至少软磁性层的两端部,设置一对偏置磁场施加层,用于经由磁性底层向软磁性层施加纵向偏置磁场。 此外,每个磁性底层和相应的偏置磁场施加层配合的平面中的相互点阵点对点距离基本上相等。 因此,可以将每个偏磁场施加层的面内方向(平行于膜表面的方向)的矫顽力Hc保持在高水平,使得即使当进一步进行间隙变窄或轨道变窄时,偏磁 场施加层可以起作用以施加有效偏置磁场,即可以起到抑制巴克豪森噪声的发生的作用。
    • 9. 发明授权
    • Magnetoresistive sensor, a thin film magnetic head, a magnetic head device, and a magnetic disk drive device
    • 磁阻传感器,薄膜磁头,磁头装置和磁盘驱动装置
    • US06462917B2
    • 2002-10-08
    • US09772930
    • 2001-01-31
    • Koichi TerunumaTetsuro SasakiKosuke TanakaTakumi Uesugi
    • Koichi TerunumaTetsuro SasakiKosuke TanakaTakumi Uesugi
    • G11B539
    • B82Y25/00B82Y10/00G01R33/093G11B5/1278G11B5/3903G11B5/3967G11B5/4806G11B5/59683G11B2005/0029G11B2005/3996Y10T428/11Y10T428/1193
    • A magnetoresistive sensor according to the present invention has a spin-valve film structure which includes an underfilm, a first ferromagnetic film, a conductive film, a second ferromagnetic film, an antiferromagnetic film and a protective film. One surface of the first ferromagnetic film is adjacent to the one surface of the underfilm, and the one surface of the conductive film is adjacent to the other surface of the first ferromagnetic film. One surface of the second ferromagnetic film is adjacent to the other surface of the conductive film. One surface of the antiferromagnetic film adjacent to the other surface of the second ferromagnetic film, and thus, the antiferromagnetic film is bonded to the second ferromagnetic film with exchange interaction. One surface of the protective film is adjacent to the other surface of the antiferromagnetic film. The underfilm has a face centered cubic crystal structure, and is oriented in the (111) plane direction. Then, the distance between the adjacent (111) planes of the spin-valve film structure except the antiferromagnetic film is within 0.2050-0.2064 nm.
    • 根据本发明的磁阻传感器具有包括底膜,第一铁磁膜,导电膜,第二铁磁膜,反铁磁膜和保护膜的自旋阀膜结构。 第一铁磁膜的一个表面与底膜的一个表面相邻,并且导电膜的一个表面与第一铁磁膜的另一个表面相邻。 第二铁磁膜的一个表面与导电膜的另一个表面相邻。 与第二铁磁膜的另一个表面相邻的反铁磁膜的一个表面,因此,反铁磁膜以交换相互作用结合到第二铁磁膜。 保护膜的一个表面与反铁磁膜的另一个表面相邻。 底膜具有面心立方晶体结构,并且在(111)面方向取向。 然后,除了反铁磁膜之外的自旋阀膜结构的相邻(111)面之间的距离在0.2050-0.2064nm内。