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1. 发明授权

US5999378A Magnetoresistance effect head having a giant magnetoresistance effect film 失效
标题翻译：具有巨磁阻效应膜的磁阻效应头
公开(公告)号：US5999378A
公开(公告)日：1999-12-07
申请号：US980871
申请日：1997-12-01
申请人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
发明人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.
摘要翻译：磁阻效应头包括巨磁阻效应膜，一对向巨磁电阻效应头供电的引线，以及由结晶软磁膜制成的上下磁屏蔽层，并设置成保持巨磁阻效应膜其间插入有磁隙膜，其中确定巨磁阻效应膜的下层的表面粗糙度，使得表面粗糙度的中心周期L满足L> 70nm。

2. 发明授权

US07602591B2 Exchange-coupled free layer with out-of-plane magnetization 有权
标题翻译：具有超平面磁化的交换耦合自由层
公开(公告)号：US07602591B2
公开(公告)日：2009-10-13
申请号：US11157961
申请日：2005-06-22
申请人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
发明人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3272 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated from a high perpendicular anisotropy layer by a spacer. Thus, the high anisotropy material introduces an out-of-plane component by exchange coupling. The high perpendicular anisotropy material also has low spin polarization. Further, the low anisotropy material positioned closer to the pinned layer has a high spin polarization. As a result, the magnetization of the low anisotropy material is re-oriented from an in-plane direction to an out-of-plane direction. Accordingly, the overall free layer perpendicular anisotropy can be made small as a result of the low anisotropy material and the high anisotropy material. Adjusting the thickness of these layers, as well as the spacer therebetween, can further lower the anisotropy and thus further increase the sensitivity.
摘要翻译：磁阻元件作为具有合成自由层的自旋阀提供。更具体地，合成自由层包括通过间隔物与高垂直各向异性层分离的低垂直各向异性层。因此，高各向异性材料通过交换耦合引入了平面外部分。高垂直各向异性材料也具有低自旋极化。此外，位于更靠近被钉扎层的低各向异性材料具有高的自旋极化。结果，低各向异性材料的磁化从面内方向重新取向到面外方向。因此，作为低各向异性材料和高各向异性材料的结果，可以使整个自由层垂直各向异性变小。调整这些层的厚度以及它们之间的间隔物可以进一步降低各向异性，从而进一步提高灵敏度。

3. 发明申请

US20070035888A1 Stabilizer for magnetoresistive head and method of manufacture 有权
标题翻译：磁阻头稳定器及制造方法
公开(公告)号：US20070035888A1
公开(公告)日：2007-02-15
申请号：US10572038
申请日：2004-04-02
申请人： Rachid Sbiaa , Haruyuki Morita
发明人： Rachid Sbiaa , Haruyuki Morita
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A reader of a current-perpendicular-to-plane magnetoresistive head includes a spin valve with sensor having a stabilizer adjacent thereto, to substantially avoid magnetization distribution at the edge of the sensor due to vortex effect and charge accumulation. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer includes a pinned ferromagnetic layer adjacent to the free layer, and an antiferromagnetic layer positioned thereon. It becomes easy to provide an effective biasing using a variety of materials having different magnetic moments and thickness. Also problems related to sensor edge for small size will be overcome. A method of manufacturing the reader is also provided.
摘要翻译：电流 - 垂直于平面的磁阻头的读取器包括具有与其相邻的稳定器的传感器的自旋阀，以基本上避免由于涡流效应和电荷累积而在传感器的边缘处的磁化分布。至少一个自由层通过间隔物与至少一个钉扎层隔开。在自由层之上，提供覆盖层。稳定器包括与自由层相邻的钉扎铁磁层和位于其上的反铁磁层。使用具有不同磁矩和厚度的各种材料提供有效的偏置变得容易。还将克服与小尺寸传感器边缘有关的问题。还提供了制造读取器的方法。

4. 发明授权

US06451215B1 Method of producing magneto-resistive tunnel junction head 失效
标题翻译：产生磁阻隧道连接头的方法
公开(公告)号：US06451215B1
公开(公告)日：2002-09-17
申请号：US09542907
申请日：2000-04-04
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , H01F10/3254 , H01F10/3268 , H01L43/12
摘要： The present invention relates to a method of producing a magneto-resistive tunnel junction head comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer. The method comprises a laminating step of forming the tunnel barrier layer and a non-magnetic metal protect layer in turn on the ferromagnetic pinned layer, an insulating layer forming step of forming side insulating layers on both sides of a lamination body having the ferromagnetic pinned layer, the tunnel barrier layer and the non-magnetic metal protect layer, a cleaning step of cleaning the surface of the non-magnetic metal protect layer, and a ferromagnetic free layer forming step of forming the ferromagnetic free layer such that the ferromagnetic free layer faces the ferromagnetic pinned layer via the cleaned surface. Therefore, according to the method, the magneto-resistive tunnel junction head is expected to have more improved head characteristics.
摘要翻译：本发明涉及一种制造磁阻隧道结头的方法，其包括具有隧道势垒层，铁磁自由层和铁磁性钉扎层的隧道多层膜，使隧道势垒层保持在铁磁性自由层和铁磁钉扎层。所述方法包括依次在所述铁磁性钉扎层上形成所述隧道势垒层和非磁性金属保护层的层压步骤，在具有所述铁磁性钉扎层的层叠体的两侧形成侧绝缘层的绝缘层形成步骤，隧道势垒层和非磁性金属保护层，清洁非磁性金属保护层的表面的清洁步骤和形成铁磁性自由层的铁磁自由层形成步骤，使得铁磁自由层面向铁磁钉扎层经过清洁的表面。因此，根据该方法，期望磁阻隧道结头具有更多改进的头部特性。

5. 发明授权

US06391431B1 Magnetoresistance effect film and magnetoresistance effect type head 失效
标题翻译：磁阻效应膜和磁阻效应型头
公开(公告)号：US06391431B1
公开(公告)日：2002-05-21
申请号：US09325394
申请日：1999-06-04
申请人： Masashi Sano , Yoshihiro Tsuchiya , Satoru Araki , Haruyuki Morita
发明人： Masashi Sano , Yoshihiro Tsuchiya , Satoru Araki , Haruyuki Morita
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/123 , H01F10/3268 , Y10T428/1143 , Y10T428/1157 , Y10T428/12861 , Y10T428/12944 , Y10T428/24975
摘要： A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, and an antiferromagnetization promote layer formed on a surface of the antiferromagnetic layer remote from the other surface thereof abutting the ferromagnetic layer, wherein the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure the which requires a heat treatment for generating exchange coupling relative to the ferromagnetic layer, and the antiferromagnetic layer after the heat treatment has a state wherein (110) crystal surfaces are oriented on a film surface of the antiferromagnetic layer.
摘要翻译：自旋阀型磁阻效应膜包括：包含非磁性金属层的多层膜，在非磁性金属层的一个表面上形成的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层形成在铁磁层的远离其另一表面的表面上的反铁磁性层，其与非磁性金属层邻接以引导铁磁层的磁化方向，以及形成在铁磁层的表面上的反铁磁化促进层反铁磁层远离其另一表面邻接铁磁层，其中反铁磁层由含Mn的化合物制成并具有CuAu-I型规则晶体结构，其需要进行热处理以产生相对于铁磁层的交换耦合，热处理后的反铁磁层具有（110）晶面的状态在反铁磁层的膜表面上取向。

6. 发明授权

US06219274B1 Ferromagnetic tunnel magnetoresistance effect element and method of producing the same 有权
标题翻译：铁磁隧道磁阻效应元件及其制造方法
公开(公告)号：US06219274B1
公开(公告)日：2001-04-17
申请号：US09438368
申请日：1999-11-12
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： G11C1100
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3268 , H01L43/08 , H01L43/12
摘要： The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier layer is formed as an oxide film obtained by oxidizing a non-magnetic metal layer according to a radical oxidation method. Thus, there can be obtained a ferromagnetic tunnel magnetoresistance effect element which is excellent in productivity and quality stability and highly excellent in TMR effect.
摘要翻译：铁磁隧道磁阻效应元件本发明涉及一种具有多层结构的铁磁隧道磁阻效应元件，该多层结构包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层，其中隧道势垒层形成为由根据自由基氧化法氧化非磁性金属层。因此，可以获得生产率和质量稳定性优异并且TMR效果非常优异的铁磁隧道磁阻效应元件。

7. 发明授权

US5754368A Suspension, slider-suspension assembly, assembly carriage device and manufacturing method of suspension 失效
标题翻译：悬架，滑块悬挂组件，组装托架装置和悬挂制造方法
公开(公告)号：US5754368A
公开(公告)日：1998-05-19
申请号：US736436
申请日：1996-10-24
申请人： Masashi Shiraishi , Shunichi Kudo , Haruyuki Morita , Akihiro Takei , Ichiro Takadera
发明人： Masashi Shiraishi , Shunichi Kudo , Haruyuki Morita , Akihiro Takei , Ichiro Takadera
IPC分类号： G11B5/48 , G11B11/105 , G11B21/16 , G11B5/55 , G11B21/08
CPC分类号： G11B5/486 , G11B11/1055 , G11B11/1058 , G11B21/16 , G11B5/4826 , G11B5/4833 , G11B5/484 , G11B11/10534 , G11B11/10569 , Y10T29/49025 , Y10T29/49027
摘要： A suspension includes a resilient flexure for supporting a magnetic head slider near its one end, and a load beam with a base end portion, for supporting the flexure. Particularly, connection conductors are formed on the flexure in a thin film pattern, and one ends of the connection conductors are to be connected to the magnetic head slider and the other ends of the connection conductors are positioned near the other end of the flexure. The other end of the flexure extends to at least a position of the base end portion of the load beam.
摘要翻译：悬架包括用于在其一端附近支撑磁头滑块的弹性挠曲件和用于支撑挠曲件的具有基端部分的负载梁。特别地，连接导体以薄膜图案形成在挠曲件上，连接导体的一端连接到磁头滑块，连接导体的另一端位于挠曲件的另一端附近。挠曲件的另一端延伸至负载梁的基端部的至少一个位置。

8. 发明授权

US5675190A Operating apparatus for parking brake and method for releasing parking brake 失效
标题翻译：驻车制动器操作装置和释放驻车制动器的方法
公开(公告)号：US5675190A
公开(公告)日：1997-10-07
申请号：US520515
申请日：1995-08-29
申请人： Haruyuki Morita
发明人： Haruyuki Morita
IPC分类号： B60T7/12 , B60R25/08 , B60T7/02 , B60T7/10 , B60T13/68 , F16H59/74 , F16H63/48
CPC分类号： B60T7/10 , B60R25/08
摘要： An operating apparatus for a parking brake is provided with a parking brake switch and an engine key switch. The parking brake switch can be operated to an ON position, an OFF position and a RESET position. When the engine key switch is OFF, the parking brake maintains an engaged state regardless of the operating position of the parking brake switch. When the engine key switch is switched from OFF to ON, the parking brake is released only when the parking brake switch is first operated to the RESET position. Then, after the parking brake switch is operated to the RESET position, the parking brake is released when the parking brake switch is operated to the OFF position, but it is engaged if the parking brake switch is operated to the ON position. With this, the parking brake is released through one and the same operating procedure, regardless of the operating position of the parking brake switch.
摘要翻译：驻车制动器的操作装置设有驻车制动开关和发动机钥匙开关。驻车制动开关可以操作到ON位置，OFF位置和RESET位置。当发动机钥匙开关关闭时，无论驻车制动开关的操作位置如何，驻车制动器保持接合状态。当发动机钥匙开关从OFF切换到ON时，驻车制动器仅在驻车制动开关首次被操作到复位位置时被释放。然后，在驻车制动开关被操作到复位位置之后，当驻车制动开关操作到OFF位置时，驻车制动器被释放，但是如果驻车制动开关被操作到ON位置，则它被接合。由此，不管驻车制动开关的操作位置如何，驻车制动器通过同一操作程序被释放。

9. 发明授权

US5094897A Magnetic recording medium comprising a glass substrate and a gamma Fe.sub.2 .sub.3 magnetic thin film with specified X-ray diffraction and surface roughness 失效
$Magnetic recording medium comprising a glass substrate and a gamma Fe.sub.2 .sub.3 magnetic thin film with specified X-ray diffraction and surface roughness$
标题翻译：磁记录介质包括玻璃基板和具有规定的X射线衍射和表面粗糙度的γFe2 O 3磁性薄膜
公开(公告)号：US5094897A
公开(公告)日：1992-03-10
申请号：US514401
申请日：1990-04-26
申请人： Haruyuki Morita , Monjiro Momoi , Kazumasa Fukuda
发明人： Haruyuki Morita , Monjiro Momoi , Kazumasa Fukuda
IPC分类号： G11B5/64
CPC分类号： G11B5/653 , Y10S428/90 , Y10T428/31
摘要： A magnetic recording disk comprising a rigid substrate and a magnetic layer of the continuous thin film type is durable and exhibits good electromagnetic properties when the magnetic layer predominantly composed of .gamma.-Fe.sub.2 O.sub.3 has specific peak area ratios in an X-ray diffraction chart thereof. Inclusion of .alpha.-Fe.sub.2 O.sub.3 in the magnetic layer is also effective. Reliable recording/reproduction can be conducted on the magnetic recording disk using a flying magnetic head.
摘要翻译：包含刚性基板和连续薄膜型磁性层的磁记录盘在X射线衍射图中主要由γ-Fe 2 O 3组成的磁性层具有特定的峰面积比是耐用的并且具有良好的电磁特性。在磁性层中包含α-Fe2O3也是有效的。可以使用飞行磁头在磁记录盘上进行可靠的记录/再现。

10. 发明授权

US4699847A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4699847A
公开(公告)日：1987-10-13
申请号：US758434
申请日：1985-07-24
申请人： Masatoshi Nakayama , Haruyuki Morita , Yuichi Kubota , Keiko Tsuchiya
发明人： Masatoshi Nakayama , Haruyuki Morita , Yuichi Kubota , Keiko Tsuchiya
IPC分类号： C08F290/00 , C08F299/02 , C09D4/00 , C09D5/23 , C09D101/18 , C09D127/04 , C09D127/06 , C09D163/00 , C09D167/06 , C09D175/00 , C09D175/04 , G11B5/702 , G11B5/73
CPC分类号： G11B5/7023 , G11B5/7026 , Y10S428/90 , Y10T428/31797 , Y10T428/31935
摘要： In a magnetic recording medium comprising a plastic base film and a magnetic layer, the base film is plasma treated at frequencies in the range of 10 kHz to 200 kHz in an inorganic gas containing at least 5% of oxygen. The magnetic layer is formed on the plasma treated base film by applying a magnetic composition of ferromagnetic fine particles dispersed in a plasticized binder compound comprising a radiation-sensitive modified resin in admixture with a radiation-sensitive modified flexible resin or prepolymer, oligomer or telomer thereof, and exposing the composition to radiation for crosslinking and polymerization.
摘要翻译：在包括塑料基膜和磁性层的磁记录介质中，在含有至少5％的氧的无机气体中，将基膜在10kHz至200kHz范围内的频率进行等离子体处理。通过将散射在包含辐射敏感性改性树脂的增塑粘合剂化合物中的铁磁细颗粒的磁性组合物与辐射敏感的改性柔性树脂或其预聚物，低聚物或调聚物混合，形成在等离子体处理的基底膜上的磁性层，并将组合物暴露于辐射用于交联和聚合。

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