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    • 14. 发明授权
    • 1,3-pentadiene derivatives and electrophotographic photoconductor using
the same
    • 使用它们的1,3-戊二烯衍生物和电子照相感光体
    • US5260156A
    • 1993-11-09
    • US907793
    • 1992-07-02
    • Mitsuru HashimotoMasaomi SasakiTomoyuki ShimadaNobuo SuzukiTakayuki SakaiSusumu Suzuka
    • Mitsuru HashimotoMasaomi SasakiTomoyuki ShimadaNobuo SuzukiTakayuki SakaiSusumu Suzuka
    • G03G5/06G03G5/047
    • G03G5/0668G03G5/067
    • A charge transporting material comprising a 1,3-pentadiene derivative having formula I):A--CH.dbd.CH--CH.dbd.CH--CH.sub.2 --A (I)wherein A represents a 9-anthryl group which may have a substituent, a N-substituted carbazolyl group which may have a substitutent, a N-substituted- phenothiazinyl group which may have a substituent or ##STR1## in which Ar represents an arylene group which may have a substituent, R.sup.1 and R.sup.2 each represent an alkyl group which may have a substituent, an aralkyl group which may have a substituent, or an aryl group which may have a substituent; an electrophotographic photoconductor comprising an electroconductive support and a photoconductive layer formed thereon, which comprises as an effective component at least one of the 1,3-pentadiene derivatives of the above formula (I); and novel 1,3-pentadiene derivatives of the formula (I), provided that in the formula I), R.sup.1 and R.sup.2 cannot be a methyl group at the same time, are disclosed.
    • 包含具有式I)的1,3-戊二烯衍生物的电荷输送材料:A-CH = CH-CH = CH-CH 2 -A(I)其中A表示可具有取代基的9-蒽基,N- 可以具有取代基的取代的咔唑基,可以具有取代基的N-取代吩噻嗪基或其中Ar表示可以具有取代基的亚芳基的“IMAGE”,R 1和R 2各自表示可以具有取代基的烷基, 取代基,可具有取代基的芳烷基或可具有取代基的芳基; 包含形成在其上的导电载体和光电导层的电子照相感光体,其包含上述式(I)的1,3-戊二烯衍生物中的至少一种作为有效成分; 和式(I)的新型1,3-戊二烯衍生物,条件是在式I)中,R1和R2不能同时为甲基。
    • 17. 发明申请
    • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME
    • 固态成像装置及其制造方法
    • US20070052056A1
    • 2007-03-08
    • US11470118
    • 2006-09-05
    • Takashi DoiToshihiko KitamuraTakayuki Sakai
    • Takashi DoiToshihiko KitamuraTakayuki Sakai
    • H01L31/06
    • H01L27/1463H01L27/14634H01L27/14689H01L27/1469
    • A solid-state imaging device includes: a semiconductor substrate; and a signal processing section provided on a backside of the semiconductor substrate. The semiconductor substrate has; a first impurity region of a first conductivity type, the first impurity region storing a signal charge produced through photoelectric conversion by a photoelectric conversion section formed in a surface portion of the semiconductor substrate; a second impurity region of the first conductivity type formed below the first impurity region; and a first gate electrode penetrating the semiconductor substrate in a thickness direction of the semiconductor substrate, the first gate electrode transferring the signal charge stored in the first impurity region to the second impurity region. The signal processing section receives the signal charge transferred to the second impurity region.
    • 固体摄像器件包括:半导体衬底; 以及设置在所述半导体衬底的背面上的信号处理部。 半导体衬底具有: 所述第一导电类型的第一杂质区域,所述第一杂质区域存储由形成在所述半导体衬底的表面部分中的光电转换部分通过光电转换产生的信号电荷; 形成在第一杂质区下面的第一导电类型的第二杂质区; 以及在所述半导体衬底的厚度方向上穿透所述半导体衬底的第一栅极电极,所述第一栅极电极将存储在所述第一杂质区域中的信号电荷转移到所述第二杂质区域。 信号处理部分接收转移到第二杂质区域的信号电荷。
    • 19. 发明申请
    • Semiconductor light emitting device
    • 半导体发光器件
    • US20060289886A1
    • 2006-12-28
    • US11262891
    • 2005-11-01
    • Takayuki Sakai
    • Takayuki Sakai
    • H01L33/00
    • H01L33/405H01L33/382H01L33/387H01L33/46H01L2933/0083
    • A semiconductor light emitting device comprises: a semiconductor multilayer structure including a light emitting layer, a first semiconductor layer and a second semiconductor layer; a first electrode that forms ohmic contact with the first semiconductor layer in the semiconductor multilayer structure; a second electrode that forms ohmic contact with the second semiconductor layer in the semiconductor multilayer structure; and a light reflector, provided adjacent to the second electrode, configured to reflect at least part of emitted light from the light emitting layer. The second electrode has a plurality of regions having a width being no more than half an in-medium wavelength of the emitted light from the light emitting layer that propagates in the second semiconductor layer.
    • 半导体发光器件包括:包括发光层,第一半导体层和第二半导体层的半导体多层结构; 与所述半导体多层结构中的所述第一半导体层形成欧姆接触的第一电极; 与半导体多层结构中的第二半导体层形成欧姆接触的第二电极; 以及邻近所述第二电极设置的光反射器,被配置为反射来自所述发光层的发射光的至少一部分。 第二电极具有多个区域,其宽度不大于来自在第二半导体层中传播的发光层的发射光的中内波长的一半。
    • 20. 发明申请
    • Method for heat treatment of precipitation hardening Al allot
    • 沉淀硬化Al分配热处理方法
    • US20050139299A1
    • 2005-06-30
    • US11065000
    • 2005-02-25
    • Takayuki Sakai
    • Takayuki Sakai
    • C22C21/02C22C21/04C22F1/043C22F1/04
    • C22F1/043C22C21/02C22C21/04
    • There is provided a precipitation hardening Al alloy in which an average area of eutectic structures existing in the Al alloy is less than 4 μm2. This Al alloy contains 6.5 to 7.5% by mass of Si, 0.36% by mass or less of Mg and 20 to 70 ppm of Sr, and is preferably used as a vehicle wheel. In heat treatment method of the precipitation hardening Al alloy, a work piece is subjected to solution treatment by being made to exist in a fluidized bed, and further a rate of solid solutions of Si and/or Mg into a phase is made to be 60% or more in the solution treatment and aging treatment is carried out at temperatures from 150° C. or more to less than 200° C. The precipitation hardening Al alloy to be obtained has well-balanced three mechanical properties of tensile strength, yield strength, and elongation, and is also excellent in fatigue strength.
    • 提供了沉积硬化Al合金,其中存在于Al合金中的共晶结构的平均面积小于4μm2。 该Al合金含有6.5〜7.5质量%的Si,0.36质量%以下的Mg和20〜70ppm的Sr,优选用作车轮。 在沉淀硬化Al合金的热处理方法中,将工件通过使其存在于流化床中而进行固溶处理,进一步使Si和/或Mg的固相溶液的比例为60 固溶处理中的%以上,老化处理在150℃以上且小于200℃的温度下进行。所得到的析出硬化Al合金具有良好平衡的拉伸强度,屈服强度 ,伸长率,疲劳强度也优异。