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1. 发明申请

US20080210985A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080210985A1
公开(公告)日：2008-09-04
申请号：US11778314
申请日：2007-07-16
申请人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
发明人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
IPC分类号： H01L27/148 , H01L31/101 , H01L31/18
CPC分类号： H01L27/14625 , H01L27/14623 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.
摘要翻译：固态成像装置包括：在其表面的至少一部分上形成有第一导电类型的区域的基板; 形成在所述第一导电类型的区域的表面的至少一部分上的第二导电类型的区域; 形成在所述基板上的多层布线层; 以及在所述多层布线层中直接形成在所述第二导电类型的区域上方的第二导电类型的层，连接到所述第二导电类型的区域。第二导电类型的层中的杂质浓度随着第二导电类型的区域的接近而降低。

2. 发明授权

US6015754A Chemical mechanical polishing apparatus and method 失效
标题翻译：化学机械抛光装置及方法
公开(公告)号：US6015754A
公开(公告)日：2000-01-18
申请号：US996695
申请日：1997-12-23
申请人： Yasukazu Mase , Yoshitaka Matsui , Takeshi Kubota , Toshihiko Kitamura
发明人： Yasukazu Mase , Yoshitaka Matsui , Takeshi Kubota , Toshihiko Kitamura
IPC分类号： B24B37/013 , B24B49/10 , H01L21/304 , H01L21/321 , H01L21/302 , C23F1/02
CPC分类号： B24B37/005 , B24B49/10 , H01L21/32115
摘要： A CMP apparatus is used to subject a target surface of a semiconductor wafer to a polishing treatment, by moving the target surface and a polishing surface of a polishing cloth relative to each other while supplying a polishing liquid between the target surface and the polishing surface. Electric resistance is measured between pairs of measuring points arranged on opposite sides of dicing lines on the target surface, while subjecting the target surface to the polishing treatment. The polishing treatment is caused to be ended by comparing detected values of a changing rate in measured values of the electric property with a reference value set to correspond to an end point of the polishing treatment.
摘要翻译： CMP设备用于通过在目标表面和抛光表面之间提供抛光液体的同时相对于彼此移动目标表面和抛光布的抛光表面来对半导体晶片的目标表面进行抛光处理。在目标表面上的切割线的相对侧的测量点对之间测量电阻，同时对目标表面进行抛光处理。通过将电性能的测量值中的变化率的检测值与设置为对应于抛光处理的终点的参考值进行比较，结束抛光处理。

3. 发明申请

US20070052056A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20070052056A1
公开(公告)日：2007-03-08
申请号：US11470118
申请日：2006-09-05
申请人： Takashi Doi , Toshihiko Kitamura , Takayuki Sakai
发明人： Takashi Doi , Toshihiko Kitamura , Takayuki Sakai
IPC分类号： H01L31/06
CPC分类号： H01L27/1463 , H01L27/14634 , H01L27/14689 , H01L27/1469
摘要： A solid-state imaging device includes: a semiconductor substrate; and a signal processing section provided on a backside of the semiconductor substrate. The semiconductor substrate has; a first impurity region of a first conductivity type, the first impurity region storing a signal charge produced through photoelectric conversion by a photoelectric conversion section formed in a surface portion of the semiconductor substrate; a second impurity region of the first conductivity type formed below the first impurity region; and a first gate electrode penetrating the semiconductor substrate in a thickness direction of the semiconductor substrate, the first gate electrode transferring the signal charge stored in the first impurity region to the second impurity region. The signal processing section receives the signal charge transferred to the second impurity region.
摘要翻译：固体摄像器件包括：半导体衬底; 以及设置在所述半导体衬底的背面上的信号处理部。半导体衬底具有：所述第一导电类型的第一杂质区域，所述第一杂质区域存储由形成在所述半导体衬底的表面部分中的光电转换部分通过光电转换产生的信号电荷; 形成在第一杂质区下面的第一导电类型的第二杂质区; 以及在所述半导体衬底的厚度方向上穿透所述半导体衬底的第一栅极电极，所述第一栅极电极将存储在所述第一杂质区域中的信号电荷转移到所述第二杂质区域。信号处理部分接收转移到第二杂质区域的信号电荷。

4. 发明授权

US07550792B2 Solid-state imaging device and manufacturing method thereof 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07550792B2
公开(公告)日：2009-06-23
申请号：US11778314
申请日：2007-07-16
申请人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
发明人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
IPC分类号： H01L27/148 , H01L31/101
CPC分类号： H01L27/14625 , H01L27/14623 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.
摘要翻译：固态成像装置包括：在其表面的至少一部分上形成有第一导电类型的区域的基板; 形成在所述第一导电类型的区域的表面的至少一部分上的第二导电类型的区域; 形成在所述基板上的多层布线层; 以及在所述多层布线层中直接形成在所述第二导电类型的区域上方的第二导电类型的层，连接到所述第二导电类型的区域。第二导电类型的层中的杂质浓度随着第二导电类型的区域的接近而降低。

5. 发明申请

US20070275496A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20070275496A1
公开(公告)日：2007-11-29
申请号：US11751807
申请日：2007-05-22
申请人： Atsuko Yamashita , Toshihiko Kitamura , Takashi Doi , Masaaki Ogawa , Takayuki Sakai
发明人： Atsuko Yamashita , Toshihiko Kitamura , Takashi Doi , Masaaki Ogawa , Takayuki Sakai
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided in the trench and made of organic material. An empty space is formed between a side wall of the trench and a side surface of the light guiding member. The side surface of the light guiding member is curved so that a central part of the side surface along a vertical direction is closer to a center axis of the trench than both end parts of the side surface along the vertical direction.
摘要翻译：固态成像装置包括：基板; 形成在基板中的光接收部分; 形成在所述基板上并且具有沟槽的布线层，形成在所述光接收部分正上方的区域上; 以及设置在沟槽中并由有机材料制成的导光构件。在沟槽的侧壁和导光构件的侧表面之间形成空的空间。导光构件的侧表面是弯曲的，使得沿着垂直方向的侧表面的中心部分比沿着垂直方向的侧表面的两个端部更靠近沟槽的中心轴线。

6. 发明授权

US07432530B2 Solid-state imaging device and method of manufacturing same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07432530B2
公开(公告)日：2008-10-07
申请号：US11751807
申请日：2007-05-22
申请人： Atsuko Yamashita , Toshihiko Kitamura , Takashi Doi , Masaaki Ogawa , Takayuki Sakai
发明人： Atsuko Yamashita , Toshihiko Kitamura , Takashi Doi , Masaaki Ogawa , Takayuki Sakai
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L31/062 , H01L31/113 , H01L31/06 , H01L27/148 , H01L29/74 , H01L29/768
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided in the trench and made of organic material. An empty space is formed between a side wall of the trench and a side surface of the light guiding member. The side surface of the light guiding member is curved so that a central part of the side surface along a vertical direction is closer to a center axis of the trench than both end parts of the side surface along the vertical direction.
摘要翻译：固态成像装置包括：基板; 形成在基板中的光接收部分; 形成在所述基板上并且具有沟槽的布线层，形成在所述光接收部分正上方的区域上; 以及设置在沟槽中并由有机材料制成的导光构件。在沟槽的侧壁和导光构件的侧表面之间形成空的空间。导光构件的侧表面是弯曲的，使得沿着垂直方向的侧表面的中心部分比沿着垂直方向的侧表面的两个端部更靠近沟槽的中心轴线。

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