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    • 7. 发明授权
    • 1,3-pentadiene derivatives and electrophotographic photoconductor using
the same
    • 使用它们的1,3-戊二烯衍生物和电子照相感光体
    • US5260156A
    • 1993-11-09
    • US907793
    • 1992-07-02
    • Mitsuru HashimotoMasaomi SasakiTomoyuki ShimadaNobuo SuzukiTakayuki SakaiSusumu Suzuka
    • Mitsuru HashimotoMasaomi SasakiTomoyuki ShimadaNobuo SuzukiTakayuki SakaiSusumu Suzuka
    • G03G5/06G03G5/047
    • G03G5/0668G03G5/067
    • A charge transporting material comprising a 1,3-pentadiene derivative having formula I):A--CH.dbd.CH--CH.dbd.CH--CH.sub.2 --A (I)wherein A represents a 9-anthryl group which may have a substituent, a N-substituted carbazolyl group which may have a substitutent, a N-substituted- phenothiazinyl group which may have a substituent or ##STR1## in which Ar represents an arylene group which may have a substituent, R.sup.1 and R.sup.2 each represent an alkyl group which may have a substituent, an aralkyl group which may have a substituent, or an aryl group which may have a substituent; an electrophotographic photoconductor comprising an electroconductive support and a photoconductive layer formed thereon, which comprises as an effective component at least one of the 1,3-pentadiene derivatives of the above formula (I); and novel 1,3-pentadiene derivatives of the formula (I), provided that in the formula I), R.sup.1 and R.sup.2 cannot be a methyl group at the same time, are disclosed.
    • 包含具有式I)的1,3-戊二烯衍生物的电荷输送材料:A-CH = CH-CH = CH-CH 2 -A(I)其中A表示可具有取代基的9-蒽基,N- 可以具有取代基的取代的咔唑基,可以具有取代基的N-取代吩噻嗪基或其中Ar表示可以具有取代基的亚芳基的“IMAGE”,R 1和R 2各自表示可以具有取代基的烷基, 取代基,可具有取代基的芳烷基或可具有取代基的芳基; 包含形成在其上的导电载体和光电导层的电子照相感光体,其包含上述式(I)的1,3-戊二烯衍生物中的至少一种作为有效成分; 和式(I)的新型1,3-戊二烯衍生物,条件是在式I)中,R1和R2不能同时为甲基。
    • 10. 发明申请
    • SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME
    • 固态成像装置及其制造方法
    • US20070052056A1
    • 2007-03-08
    • US11470118
    • 2006-09-05
    • Takashi DoiToshihiko KitamuraTakayuki Sakai
    • Takashi DoiToshihiko KitamuraTakayuki Sakai
    • H01L31/06
    • H01L27/1463H01L27/14634H01L27/14689H01L27/1469
    • A solid-state imaging device includes: a semiconductor substrate; and a signal processing section provided on a backside of the semiconductor substrate. The semiconductor substrate has; a first impurity region of a first conductivity type, the first impurity region storing a signal charge produced through photoelectric conversion by a photoelectric conversion section formed in a surface portion of the semiconductor substrate; a second impurity region of the first conductivity type formed below the first impurity region; and a first gate electrode penetrating the semiconductor substrate in a thickness direction of the semiconductor substrate, the first gate electrode transferring the signal charge stored in the first impurity region to the second impurity region. The signal processing section receives the signal charge transferred to the second impurity region.
    • 固体摄像器件包括:半导体衬底; 以及设置在所述半导体衬底的背面上的信号处理部。 半导体衬底具有: 所述第一导电类型的第一杂质区域,所述第一杂质区域存储由形成在所述半导体衬底的表面部分中的光电转换部分通过光电转换产生的信号电荷; 形成在第一杂质区下面的第一导电类型的第二杂质区; 以及在所述半导体衬底的厚度方向上穿透所述半导体衬底的第一栅极电极,所述第一栅极电极将存储在所述第一杂质区域中的信号电荷转移到所述第二杂质区域。 信号处理部分接收转移到第二杂质区域的信号电荷。