专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070235344A1 Process for high copper removal rate with good planarization and surface finish 审中-公开
标题翻译：具有良好的平坦化和表面光洁度的高铜去除率的工艺
公开(公告)号：US20070235344A1
公开(公告)日：2007-10-11
申请号：US11399560
申请日：2006-04-06
申请人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： B23H5/08
CPC分类号： B23H5/08 , C25F3/02 , H01L21/32125
摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.
摘要翻译：公开了一种用于电化学机械抛光（ECMP）的方法。通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。通常，增加压板和头部的表面速度将增加表面平滑度。此外，增加晶片上的电流密度将增加表面平滑度。在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。对于铜，可以实现10,000 / min以上的去除率。

12. 发明授权

US07207878B2 Conductive polishing article for electrochemical mechanical polishing 失效
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US07207878B2
公开(公告)日：2007-04-24
申请号：US11031545
申请日：2005-01-08
申请人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Q. Liu , Antoine P. Manens , Siew S. Neo , Stan D. Tsai , Liang-Yuh Chen , Paul D. Butterfield , Yuan A. Tian , Sen-Hou Ko
发明人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Q. Liu , Antoine P. Manens , Siew S. Neo , Stan D. Tsai , Liang-Yuh Chen , Paul D. Butterfield , Yuan A. Tian , Sen-Hou Ko
IPC分类号： B24D11/00
CPC分类号： B82Y30/00 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/14 , B24B37/16 , B24B37/205 , B24B37/22 , B24B37/24 , B24B37/26 , B24B53/017 , H01L21/32125 , Y10T428/249924
摘要： Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.
摘要翻译：提供了用于处理基板的抛光制品的实施例。在一个实施例中，用于处理衬底的抛光制品包括其上设置有导电层的织物层。导电层具有适于抛光衬底的暴露表面。织物层可以是编织的或非织造的。导电层可以由软金属构成，并且在一个实施例中，暴露的表面可以是平面的。

13. 发明授权

US07008554B2 Dual reduced agents for barrier removal in chemical mechanical polishing 失效
公开(公告)号：US07008554B2
公开(公告)日：2006-03-07
申请号：US10193810
申请日：2002-07-11
申请人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

14. 发明授权

US06991528B2 Conductive polishing article for electrochemical mechanical polishing 失效
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US06991528B2
公开(公告)日：2006-01-31
申请号：US10455941
申请日：2003-06-06
申请人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Q. Liu , Antoine P. Manens , Siew S. Neo , Stan D. Tsai , Liang-Yuh Chen , Paul D. Butterfield , Yuan A. Tian , Sen-Hou Ko
发明人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Q. Liu , Antoine P. Manens , Siew S. Neo , Stan D. Tsai , Liang-Yuh Chen , Paul D. Butterfield , Yuan A. Tian , Sen-Hou Ko
IPC分类号： B23H3/00 , B23B5/02
CPC分类号： B82Y30/00 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/14 , B24B37/16 , B24B37/205 , B24B37/22 , B24B37/24 , B24B37/26 , B24B53/017 , H01L21/32125 , Y10T428/249924
摘要： Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.
摘要翻译：提供了用于处理基板的抛光制品的实施例。在一个实施例中，用于处理衬底的抛光制品包括其上设置有导电层的织物层。导电层具有适于抛光衬底的暴露表面。织物层可以是编织的或非织造的。导电层可以由软金属构成，并且在一个实施例中，暴露的表面可以是平面的。

15. 发明授权

US06991526B2 Control of removal profile in electrochemically assisted CMP 失效
标题翻译：电化学辅助CMP中去除曲线的控制
公开(公告)号：US06991526B2
公开(公告)日：2006-01-31
申请号：US10244697
申请日：2002-09-16
申请人： Lizhong Sun , Liang-Yuh Chen , Siew Neo , Feng Q. Liu , Alain Duboust , Stan D. Tsai , Rashid Mavliev
发明人： Lizhong Sun , Liang-Yuh Chen , Siew Neo , Feng Q. Liu , Alain Duboust , Stan D. Tsai , Rashid Mavliev
IPC分类号： B24B1/00 , C25F7/00
CPC分类号： B24B37/042 , B23H5/08
摘要： Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.
摘要翻译：本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。一方面，用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。电介质插入件位于对电极和衬底之间。电介质插入件具有多个区域，每个区域允许在对电极和衬底之间分开的电流密度。在另一个实施例中，用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。对电极包括多个电绝缘的导电元件。电连接器分别耦合到每个导电元件。

16. 发明申请

US20050000801A1 Method and apparatus for electrochemical mechanical processing 失效
标题翻译：电化学机械加工的方法和装置
公开(公告)号：US20050000801A1
公开(公告)日：2005-01-06
申请号：US10880752
申请日：2004-06-30
申请人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
发明人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
IPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , H01L21/321 , C25D17/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/16 , B24B49/16 , B24B53/017 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。残余处理单元包括偏置的导电平面化表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

17. 发明授权

US07390744B2 Method and composition for polishing a substrate 失效
标题翻译：抛光基材的方法和组合物
公开(公告)号：US07390744B2
公开(公告)日：2008-06-24
申请号：US11130032
申请日：2005-05-16
申请人： Renhe Jia , Feng Q. Liu , Stan D. Tsai , Liang-Yuh Chen
发明人： Renhe Jia , Feng Q. Liu , Stan D. Tsai , Liang-Yuh Chen
IPC分类号： H01L21/302
CPC分类号： B23H5/08 , C09G1/02 , C11D3/1213 , C11D3/124 , C11D3/14 , C11D3/3765 , C11D3/3947 , C11D11/0041 , C25F3/02 , C25F3/08 , H01L21/3212 , H01L21/32125 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing process or by an electrochemical mechanical polishing process. The polishing compositions used in barrier removal may further be used after a process for electrochemical mechanical planarization process of a conductive material. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization type defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。提供抛光组合物用于通过化学机械抛光工艺或通过电化学机械抛光工艺从衬底表面去除至少一种阻挡材料。用于屏障去除的抛光组合物可以在导电材料的电化学机械平面化工艺的过程之后进一步使用。本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时降低了平面化型缺陷。

18. 发明授权

US07375023B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法和装置
公开(公告)号：US07375023B2
公开(公告)日：2008-05-20
申请号：US11393999
申请日：2006-03-30
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更大的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

19. 发明授权

US07278911B2 Conductive polishing article for electrochemical mechanical polishing 有权
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US07278911B2
公开(公告)日：2007-10-09
申请号：US11215254
申请日：2005-08-30
申请人： Paul D. Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine P. Manens , Rashid Mavliev , Stan D. Tsai , Feng Q. Liu , Ralph Wadensweiler , Lizhong Sun , Siew S. Neo , Alain Duboust
发明人： Paul D. Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine P. Manens , Rashid Mavliev , Stan D. Tsai , Feng Q. Liu , Ralph Wadensweiler , Lizhong Sun , Siew S. Neo , Alain Duboust
IPC分类号： B24D11/02 , B23H5/06 , C25D17/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.
摘要翻译：提供了用于研磨衬底的抛光制品的实施例。在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

20. 发明授权

US07210988B2 Method and apparatus for reduced wear polishing pad conditioning 失效
标题翻译：降低磨损抛光垫调理的方法和装置
公开(公告)号：US07210988B2
公开(公告)日：2007-05-01
申请号：US11209167
申请日：2005-08-22
申请人： Yan Wang , Stan D. Tsai , Yongqi Hu , Feng Q. Liu , Liang-Yuh Chen , Daxin Mao , Huyen Karen Tran , Martin S. Wohlert , Renhe Jia , Yuan A. Tian
发明人： Yan Wang , Stan D. Tsai , Yongqi Hu , Feng Q. Liu , Liang-Yuh Chen , Daxin Mao , Huyen Karen Tran , Martin S. Wohlert , Renhe Jia , Yuan A. Tian
IPC分类号： B24B53/00
CPC分类号： B24B53/017 , B23H5/08
摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要翻译：提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。在一个实施例中，调节头包括设置在中心腔中的刷子。清洁流体通过调节头的中心空腔设置到处理垫。刷子旋转并横向移动到处理垫的表面上。通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻擦拭处理垫。调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式