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11. 发明授权

US07071550B2 Semiconductor module having heat sink serving as wiring line 失效
标题翻译：具有散热器的半导体模块用作布线
公开(公告)号：US07071550B2
公开(公告)日：2006-07-04
申请号：US10814290
申请日：2004-04-01
申请人： Nobuyuki Sato
发明人： Nobuyuki Sato
IPC分类号： H01L23/10
CPC分类号： H01L23/3121 , H01L21/563 , H01L23/4334 , H01L25/165 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the top-surfaces face the package substrate, a drive-use integrated circuit (IC) chip which is mounted by flip chip bonding above the package substrate for driving the gates of metal insulator semiconductor field effect transistors (MISFETs) that are formed on the power MIS chips, a plurality of heat sinks disposed on or above the back surfaces of the power MXS chips, and a resin member for sealing the power MIS chips and the driver IC chip together in a single package.
摘要翻译：半导体模块包括部件安装或封装基板，具有顶表面和后表面的多个功率金属绝缘体半导体（MIS）芯片，并且通过倒装芯片接合安装在封装基板上或上方，同时使顶表面面封装基板，驱动用集成电路（IC）芯片，其通过倒装芯片接合安装在封装基板上方，用于驱动形成在电源MIS芯片上的金属绝缘体半导体场效应晶体管（MISFET）的栅极，多个设置在动力MXS芯片的背面上或上方的散热器，以及用于将功率MIS芯片和驱动器IC芯片一起密封在一起的树脂部件。

12. 发明申请

US20060097380A1 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US20060097380A1
公开(公告)日：2006-05-11
申请号：US11299812
申请日：2005-12-13
申请人： Nobuyuki Sato
发明人： Nobuyuki Sato
IPC分类号： H01L23/34
CPC分类号： H01L23/3121 , H01L21/563 , H01L23/4334 , H01L25/165 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091 , H01L2924/16152 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the top surfaces face the package substrate, a drive-use integrated circuit (IC) chip which is mounted by flip chip bonding above the package substrate for driving the gates of metal insulator semiconductor field effect transistors (MISFETs) that are formed on the power MIS chips a plurality of heat sinks disposed on or above the back surfaces of the power MIS chips, and a resin member for sealing the power MIS chips and the driver IC chip together in a single package.
摘要翻译：半导体模块包括部件安装或封装基板，多个功率金属绝缘体半导体（MIS）芯片，其具有顶表面和后表面，并且通过倒装芯片接合安装在封装基板上或上方，同时使顶表面面向封装基板，驱动用集成电路（IC）芯片，其通过在封装基板上方的倒装芯片接合来安装，用于驱动形成在电源MIS芯片上的金属绝缘体半导体场效应晶体管（MISFET）的栅极，多个热量设置在电力MIS芯片的背面上或上方的接收器，以及用于将功率MIS芯片和驱动器IC芯片一起密封在一起的树脂部件。

13. 发明申请

US20050121718A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050121718A1
公开(公告)日：2005-06-09
申请号：US11037158
申请日：2005-01-19
申请人： Kazuya Nakayama , Bungo Tanaka , Nobuyuki Sato
发明人： Kazuya Nakayama , Bungo Tanaka , Nobuyuki Sato
IPC分类号： H01L21/336 , H01L29/06 , H01L29/10 , H01L29/12 , H01L29/417 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/1045 , H01L29/4175 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate, a semiconductor layer formed above the semiconductor substrate, a plurality of unit cells each having a structure with a gate electrode disposed and formed above the semiconductor layer to have a stripe-like shape and with a source layer and a drain layer formed in the semiconductor layer to have stripe-like shapes respectively, a gate wiring line for mutually connecting together respective gate electrodes of the unit cells, a first main electrode being formed on a dielectric film covering the gate electrodes and the gate wiring line and being in contact with any one of the source layer and the drain layer of each unit cell, an impurity diffusion layer formed in the semiconductor layer to a depth reaching the semiconductor substrate only at part immediately underlying the gate wiring line, the part being selected from part immediately underlying a remaining one of the source layer and the drain layer of each unit cell and part immediately underlying the gate wiring line, the impurity diffusion layer being for permitting extension of the remaining one of the source and drain layers of each unit cell up to the semiconductor substrate, and a second main electrode as formed at a back surface of the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的半导体层，多个单元电池，每个单元电池具有设置并形成在半导体层上方的具有栅极电极的结构以具有条状形状并具有源极层和形成在所述半导体层中的具有条状形状的漏极层，用于将所述单元电池的各个栅电极相互连接在一起的栅极布线;形成在覆盖所述栅电极的电介质膜上的第一主电极和所述栅极布线并与每个单元电池的源极层和漏极层中的任何一个接触;在半导体层中仅形成在栅极布线的正下方的部分的深度到达半导体基板的深度的杂质扩散层，该部分是从每个单位单元和部分的源层和漏层中的剩余部分的下方的部分中选择在栅极布线的下方，杂质扩散层用于允许每个单元电池的剩余的一个源极和漏极层延伸到半导体衬底;以及第二主电极，形成在半导体衬底的背面。

14. 发明授权

US06765786B2 Niobium powder and solid electrolytic capacitor using the same 有权
标题翻译：铌粉和固体电解电容使用相同
公开(公告)号：US06765786B2
公开(公告)日：2004-07-20
申请号：US10391254
申请日：2003-03-18
申请人： Tadasu Kirihara , Nobuyuki Sato , Osamu Ebato , Kan Saito
发明人： Tadasu Kirihara , Nobuyuki Sato , Osamu Ebato , Kan Saito
IPC分类号： H01G904
CPC分类号： H01G9/0525 , C22C1/045
摘要： A niobium powder is provided for producing a niobium capacitor enhanced in the thermal stability of oxide films on niobium, with less leak current and less deterioration of leak current after application of thermal loads. The niobium powder contains form 0.005 to 0.10 mass % of hydrogen and from 0.002 to 5 mass % of sulfur and, further preferably, one or both of magnesium and aluminum in an amount from 0.002 to 1 mass % in total. The specific surface area of the powder is 1 to 10 m2/g and the average particle diameter of the secondary particles is 10 to 200 &mgr;m.
摘要翻译：提供了一种铌粉末，用于制造铌电容器，其在铌上的氧化膜的热稳定性增强，漏电流较小，并且在施加热负载后泄漏电流的劣化较小。铌粉末含有0.005〜0.10质量％的氢和0.002〜5质量％的硫，进一步优选为0.002质量％〜1质量％的镁和铝中的一种或两种。粉末的比表面积为1〜10m 2 / g，二次粒子的平均粒径为10〜200μm。

15. 发明授权

US06310854B1 Optical disk having areas of different recording densities or functions 有权
标题翻译：具有不同记录密度或功能的区域的光盘
公开(公告)号：US06310854B1
公开(公告)日：2001-10-30
申请号：US09198958
申请日：1998-11-24
申请人： Nobuyuki Sato , Katsuichi Osakabe
发明人： Nobuyuki Sato , Katsuichi Osakabe
IPC分类号： G11B724
CPC分类号： G11B7/0079 , A63F2300/206 , G11B7/0045 , G11B7/007 , G11B7/24 , G11B7/26 , G11B20/10527 , G11B27/034 , G11B27/036 , G11B27/19 , G11B27/24 , G11B27/329 , G11B2020/1259 , G11B2220/211 , G11B2220/2529 , G11B2220/2545 , G11B2220/2562 , G11B2220/2583 , Y10S430/146
摘要： An optical disk includes a standard area of a standard recording density provided on an inner peripheral side and a high density area of a higher recording density provided on an outer peripheral side. In each of the standard area and the high density area, a program area is provided so that an independent program can be recorded in each program area. In, one aspect of the invention, an optical disk includes, from the inner periphery to the outer periphery of the disk, a ROM area for read-only purpsoe, a RAM area in which information can be rewritten and a WO area in which information can be written only once.
摘要翻译：光盘包括设置在内周侧的标准记录密度的标准区域和设置在外周侧的较高记录密度的高密度区域。在每个标准区域和高密度区域中，提供了一个程序区域，使得可以在每个程序区域中记录独立的程序。在本发明的一个方面中，一种光盘包括从盘的内周到外周的只读光纤的ROM区域，可以重写信息的RAM区域和信息的WO区域只能写一次。

16. 发明授权

US6155677A Ink jet recording head, an ink jet unit and an ink jet apparatus using said recording head 失效
标题翻译：喷墨记录头，喷墨单元和使用所述记录头的喷墨设备
公开(公告)号：US6155677A
公开(公告)日：2000-12-05
申请号：US346917
申请日：1994-11-23
申请人： Masashi Kitani , Hiroshi Sugitani , Yasuro Kashima , Masanori Takenouchi , Tadanobu Nagami , Kunihiko Maeoka , Nobuyuki Sato , Hajime Yamamoto , Susumu Ito , Minoru Nozawa , Akira Tsujimoto , Seiichiro Karita , Masashi Miyagawa
发明人： Masashi Kitani , Hiroshi Sugitani , Yasuro Kashima , Masanori Takenouchi , Tadanobu Nagami , Kunihiko Maeoka , Nobuyuki Sato , Hajime Yamamoto , Susumu Ito , Minoru Nozawa , Akira Tsujimoto , Seiichiro Karita , Masashi Miyagawa
IPC分类号： B41J2/14 , B41J2/16 , B41J2/315 , B41J2/015 , B41J2/05
CPC分类号： B41J2/1404 , B41J2/14024 , B41J2/14145 , B41J2002/14379
摘要： An ink jet head for performing recording by discharging inks comprises an element substrate provided with a plurality of discharge energy generating elements for discharging the inks and a grooved member integrally having discharge ports, a plurality of grooves constituting ink flow passages provided corresponding to the discharge energy generating elements, a plurality of recess portions constituting a plurality of liquid chambers for supplying the inks to a plurality of ink flow passages, and separation grooves provided between the plurality of recess portions to separate between the recess portions constituting the liquid chambers. The element substrate and the groove member being jointed together. The liquid chambers are separated by the separation grooves for preventing the inks from flowing between the liquid chambers.
摘要翻译：用于通过喷墨进行记录的喷墨头包括设置有用于排出墨的多个排出能量产生元件的元件基板和一体地具有排出口的开槽部件，构成相应于排出能量设置的墨水流动通道的多个凹槽多个凹部，构成用于将油墨供给到多个墨水流路的多个液体室，以及设置在多个凹部之间以在构成液体室的凹部之间分离的分离槽。元件基板和槽构件接合在一起。液体室由分隔槽分开，以防止油墨在液体室之间流动。

17. 发明授权

US5869850A Lateral insulated gate bipolar transistor 失效
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US5869850A
公开(公告)日：1999-02-09
申请号：US990077
申请日：1997-12-12
申请人： Koichi Endo , Nobuyuki Sato
发明人： Koichi Endo , Nobuyuki Sato
IPC分类号： H01L21/331 , H01L29/06 , H01L29/739 , H01L29/74
CPC分类号： H01L29/66325 , H01L29/0696 , H01L29/7393 , H01L29/7394
摘要： A lateral insulated gate bipolar transistor has an emitter region that is displaced from a main path for passing carriers from a collector region to a base region through a first semiconductor layer. This arrangement suppresses the operation of a parasitic transistor composed of the emitter region, base region, and first semiconductor layer and prevents a latch-up. The width of the gate electrode of covering the first semiconductor layer serving as a drift region of carriers may be widened to form a carrier accumulation layer in the first semiconductor layer adjacent to the gate electrode. The accumulation layer increases the total number of carriers in the drift region, to reduce a saturation voltage between the collector region and the emitter region. As a result, the lateral insulated gate bipolar transistor operates with a low voltage to reduce power consumption.
摘要翻译：横向绝缘栅双极晶体管具有从主路径偏移的发射极区域，用于使载流子从集电极区域通过第一半导体层通过基极区域。这种布置抑制由发射极区域，基极区域和第一半导体层构成的寄生晶体管的操作，并且防止闩锁。覆盖用作载流子漂移区域的第一半导体层的栅电极的宽度可以加宽，以在与栅电极相邻的第一半导体层中形成载流子堆积层。累积层增加了漂移区域中的载流子总数，以减小集电极区域和发射极区域之间的饱和电压。结果，横向绝缘栅双极晶体管以低电压工作以降低功耗。

18. 发明授权

US5523395A Lectin species obtained from Japanese horseshoe crabs and from southern horseshoe crabs 失效
标题翻译：从日本鲎和南马蹄获得的凝集素
公开(公告)号：US5523395A
公开(公告)日：1996-06-04
申请号：US277939
申请日：1994-07-20
申请人： Seiichi Ohkuma , Khomei Yanagi , Kuniharu Wada , Isami Tsuboi , Shoji Kimura , Masahito Matsukawa , Nobuyuki Sato
发明人： Seiichi Ohkuma , Khomei Yanagi , Kuniharu Wada , Isami Tsuboi , Shoji Kimura , Masahito Matsukawa , Nobuyuki Sato
IPC分类号： A61K38/00 , C07K14/435 , C07K1/00
CPC分类号： C07K14/43509 , A61K38/00 , Y10S530/857
摘要： Disclosed are two lectin species isolated from the hemolymph of Japanese horseshoe crabs and Southern horseshoe crabs which bind to N-acetylneuraminic acid and N-glycolylneuraminic acid, but not to N-acetylglucosamine, glucoronic acid, or N-acetylgalactosamine.
摘要翻译：公开了从日本马蹄蟹和南马蹄蟹的血淋巴中分离出的两种凝集素物质，其结合N-乙酰神经氨酸和N-羟乙酰神经氨酸，而不与N-乙酰氨基葡萄糖，葡萄糖酸或N-乙酰半乳糖胺结合。

19. 发明授权

US5332921A Resin-seal type semiconductor device 失效
标题翻译：树脂密封型半导体器件
公开(公告)号：US5332921A
公开(公告)日：1994-07-26
申请号：US052610
申请日：1993-04-27
申请人： Noriaki Dousen , Nobuyuki Sato , Kouji Araki
发明人： Noriaki Dousen , Nobuyuki Sato , Kouji Araki
IPC分类号： H01L23/12 , H01L23/24 , H01L23/28 , H01L23/34 , H01L23/433 , H01L23/495 , H01L23/50 , H01L25/04 , H01L25/18 , H01L23/02
CPC分类号： H01L24/49 , H01L23/24 , H01L23/4334 , H01L23/49531 , H01L2224/05554 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4911 , H01L2224/49171 , H01L2224/49175 , H01L24/45 , H01L24/48 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19107
摘要： A resin-seal type semiconductor device includes a main substrate divided into first and second surfaces on which first and second insulating substrates are respectively provided. Circuit wiring patterns and first end portions of outer leads are provided on the first and second insulating substrates. Semiconductor elements are soldered onto the wiring patterns and coated with a surface protection material. The main substrate is then folded over so that the first and second surfaces oppose one another and the device acquires a U-shaped cross-section. A space formed between the first and second surfaces inside the U-shape is sealed with a resin such that second end portions of the outer leads are exposed from the resin.
摘要翻译：树脂密封型半导体器件包括分为第一和第二表面的主衬底，分别设有第一和第二绝缘衬底。电路布线图案和外引线的第一端部设置在第一绝缘基板和第二绝缘基板上。将半导体元件焊接到布线图案上并涂覆有表面保护材料。然后将主基板折叠成使得第一和第二表面彼此相对，并且该装置获得U形横截面。在U形内部的第一和第二表面之间形成的空间用树脂密封，使得外引线的第二端部从树脂露出。

20. 发明授权

US4805795A Butt-welded cans and process for manufacturing the same 失效
标题翻译：对焊罐和制造工艺相同
公开(公告)号：US4805795A
公开(公告)日：1989-02-21
申请号：US140603
申请日：1987-12-28
申请人： Nobuyuki Sato , Hiroshi Matsubayashi , Seishichi Kobayashi , Minoru Mitsuhashi , Kenji Matsuno , Kazuhisa Ishibashi
发明人： Nobuyuki Sato , Hiroshi Matsubayashi , Seishichi Kobayashi , Minoru Mitsuhashi , Kenji Matsuno , Kazuhisa Ishibashi
IPC分类号： B23K26/18 , B23K26/24 , B23K26/26 , B23K26/32 , B23K35/22
CPC分类号： B23K35/224 , B23K26/18 , B23K26/244 , B23K26/262 , B23K26/32 , B23K26/322 , B23K2201/34 , B23K2203/04 , B23K2203/50 , Y10S220/29 , Y10T29/5185 , Y10T428/1355
摘要： There is here provided butt-welded cans made of steel plates having a carbon concentration of 0.02 to 0.09% by weight, the aforesaid butt-welded cans being characterized in that a coating film for preventing the adhesion of melted metal particles is applied to at least the inner surface of the weld portion and its vicinity of each can, and a carbon concentration index I of the weld portion satisfies the formula (1)I=(Iw/Ic).times.10.sup.3 .ltoreq.15 (1)wherein Iw is a K.alpha. X ray intensity, of carbon in the weld portion, measured by the EPMA method, andIc is a K.alpha. X ray intensity, of carbon in graphite, measured by the EPMA method.
摘要翻译：这里提供了碳浓度为0.02〜0.09重量％的钢板对接焊接罐，上述对接焊接罐的特征在于，至少施加防止熔融金属颗粒粘附的涂膜每个罐的焊接部分的内表面及其附近，并且焊接部分的碳浓度指数I满足式（1）I =（Iw / Ic）×103

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