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11. 发明授权

US08466549B2 Semiconductor device for power conversion 有权
标题翻译：用于电力转换的半导体器件
公开(公告)号：US08466549B2
公开(公告)日：2013-06-18
申请号：US13244133
申请日：2011-09-23
申请人： Kentaro Ochi , Akira Mishima , Takuro Kanazawa , Tetsuo Iijima , Katsuo Ishizaka , Norio Kido
发明人： Kentaro Ochi , Akira Mishima , Takuro Kanazawa , Tetsuo Iijima , Katsuo Ishizaka , Norio Kido
IPC分类号： H01L23/34
CPC分类号： H01L23/3107 , H01L23/49568 , H01L23/49575 , H01L24/33 , H01L25/115 , H01L2224/32245 , H01L2924/1301 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. The third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.
摘要翻译：提供了通过使用半导体封装形成的半导体器件。半导体器件包括在感应导体上相邻布置的两个半导体封装。两个半导体封装的端子由第三引线连接。第三引线被布置成基本上平行于感应导体。接头部分处的引线例如具有弯曲结构，并且第三引线布置成靠近感应导体。

12. 发明授权

US07643323B2 Power converter 失效
标题翻译：电源转换器
公开(公告)号：US07643323B2
公开(公告)日：2010-01-05
申请号：US11905745
申请日：2007-10-03
申请人： Katsunori Azuma , Akira Mishima , Takashi Kaneko , Masaomi Konishide
发明人： Katsunori Azuma , Akira Mishima , Takashi Kaneko , Masaomi Konishide
IPC分类号： H02M1/00
CPC分类号： H02M7/003
摘要： A power converter of the present invention is connected between a direct current power source and controls power to a load by switching equipment. The converter is equipped with a first conductor for connecting a negative pole of the power converter and the switching equipment, and a second conductor for connecting a housing of the power converter and the negative pole of the power converter to the first conductor through a resistor.
摘要翻译：本发明的电力转换器连接在直流电源之间，并通过开关设备对负载进行电力控制。转换器配备有用于连接功率转换器的负极和开关设备的第一导体，以及用于通过电阻器将功率转换器的壳体和功率转换器的负极连接到第一导体的第二导体。

13. 发明申请

US20050161785A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050161785A1
公开(公告)日：2005-07-28
申请号：US11041200
申请日：2005-01-25
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/28 , H01L21/52 , H01L23/02 , H01L23/34 , H01L23/36 , H01L23/495 , H01L25/04 , H01L25/07 , H01L25/18 , H01L27/00
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子 GT1形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线如图6所示，漏极端子DT2形成在芯片3的背面，输出侧板状引线6与漏极端子DT2连接。此外，形成源极端子ST2和栅极端子GT2 在同步功率MOSFET芯片3的主表面上，并且源极端子ST2连接到用于源极13的板状引线。用于源极12和13的板状引线被暴露，因此，增加MCM 1的散热能力。

14. 发明申请

US20050134405A1 Electronic device and semiconductor device 审中-公开
标题翻译：电子设备和半导体器件
公开(公告)号：US20050134405A1
公开(公告)日：2005-06-23
申请号：US10999953
申请日：2004-12-01
申请人： Kentaro Ochi , Akira Mishima , Hitoshi Akamine
发明人： Kentaro Ochi , Akira Mishima , Hitoshi Akamine
IPC分类号： H01F17/00 , H01F27/00 , H03H5/02 , H03H7/01
CPC分类号： H03H7/0115 , H01F17/0013 , H01F2017/0026 , H01F2017/0053 , H03H7/1758 , H03H7/1766 , H03H7/38 , H03H7/463 , H03H2001/0085
摘要： This invention improves electric characteristics of electronic devices and semiconductor devices. An electronic device comprising an inductive conductor section 4 forming a coil pattern 3 on each of three primary dielectric substrates 1a which are laminated into a multi-layer part, a capacitive conductor section 6 forming a capacitance pattern 5 on each of two secondary dielectric substrates 1b which are laminated into another multi-layer part, and external connection terminals 9 which are connected to both ends of the inductive conductor section 4 and the capacitive conductor section 6 by means of through-hole wiring 8; wherein the conductor sections 4 and 6 are laminated, each of the capacitive conductor sections 6 forming a capacitance pattern 5 has a slit 10 to shut off a flow of an eddy current from the coil pattern 3 to the conductor section 6, and this configuration can suppress a loss of eddy current and reduction in the Q factor and inductance (L) of the inductive conductor section 4.
摘要翻译：本发明改善了电子器件和半导体器件的电特性。一种电子设备，包括：在层叠在多层部分中的三个一次介质基板1a的每一个上形成线圈图案3的感应导体部分4，在两个二次介质基板中的每一个上形成电容图案5的电容性导体部分6 1b层叠在另一层叠部分中，外部连接端子9通过通孔布线8连接到感应导体部分4和电容性导体部分6的两端; 其中导体部分4和6层压，形成电容图案5的每个电容性导体部分6具有狭缝10，以切断涡流从线圈图案3到导体部分6的流动，并且该构造可以抑制涡电流的损失，并降低感应导体部分4的Q因子和电感（L）。

15. 发明授权

US06377479B1 Power conversion system 有权
标题翻译：电源转换系统
公开(公告)号：US06377479B1
公开(公告)日：2002-04-23
申请号：US09660543
申请日：2000-09-12
申请人： Hideki Ayano , Akira Mishima , Satoru Inarida
发明人： Hideki Ayano , Akira Mishima , Satoru Inarida
IPC分类号： H02M112
CPC分类号： H02M1/12 , H02M2001/123
摘要： The output power line 4 of the power converter 2 and the common mode current circulation line 7 are wound together on a magnetic core to form the GP coil 3, each end of the common mode current circulation line 7 is connected to the grounding line 8 of the power supply of the power converter and to the grounding line 6 of the load, and the common mode current is circulated into the power converter 2 via the common mode current circulation line 7. By means of this simple constitution, wherein the impedance in the grounding circuit loop becomes higher than that in the common mode current circulation line loop due to the function of the GP coil and consequently most of the common mode current is led into the circulation loop comprising of the common mode current circulation line, high-frequency noise interference caused by the common mode current is suppressed as a result of the canceling effect of the power line.
摘要翻译：电力转换器2的输出电力线4和共模电流循环线7在磁芯上缠绕在一起形成GP线圈3，共模电流循环线7的每端与接地线8连接功率转换器的电源和负载的接地线6，共模电流经由共模电流循环线路7循环进入功率转换器2.通过这种简单的结构，其中，由于GP线圈的功能，接地电路环路比共模电流循环线路环路更高，因此大多数共模电流被引入包括共模电流循环线路的循环回路，高频噪声作为电力线的消除效果的结果，抑制由共模电流引起的干扰。

16. 发明授权

US06233442B1 High frequency apparatus with reduced adjusting error 失效
标题翻译：具有降低调整误差的高频装置
公开(公告)号：US06233442B1
公开(公告)日：2001-05-15
申请号：US09144729
申请日：1998-09-01
申请人： Tsutomu Koda , Akira Mishima , Tetsuya Ozaki , Seiji Matsushita
发明人： Tsutomu Koda , Akira Mishima , Tetsuya Ozaki , Seiji Matsushita
IPC分类号： H04B126
CPC分类号： H03D7/00 , H03D2200/0017 , H03D2200/009 , H04B1/1036
摘要： A high frequency apparatus includes an input terminal 21, a high frequency filter 22 to which a signal input into the input terminal 21 is supplied, a mixer 24, one input of which an output signal of the high frequency filter 22 is supplied to and an other input of which an output signal of a local oscillator 23 is supplied to, an intermediate frequency filter 25 to which an output signal of the mixer 24 is supplied, an output terminal 27 to which an output signal of the intermediate frequency filter 25 is supplied, and an electronic switch 30. The electronic switch is provided in the vicinity of the intermediate frequency filter 25, for making a passband characteristic of the intermediate frequency filter 25 substantially flat by closing both contacts, wherein opening and closing of the electronic switch 30 is controlled externally. Accordingly, the adjusting error of the high frequency filter can be reduced.
摘要翻译：高频装置包括：输入端子21，输入到输入端子21的信号的高频滤波器22;混频器24，其中输入高频滤波器22的输出信号的一个输入端和提供本地振荡器23的输出信号的其他输入，提供混频器24的输出信号的中频滤波器25提供中频滤波器25的输出信号的输出端27 和电子开关30.电子开关设置在中频滤波器25附近，用于通过闭合两个触点来使中频滤波器25的通带特性基本平坦，其中电开关30的开和关是从外部控制。因此，能够降低高频滤波器的调整误差。

17. 发明授权

US6052571A Tuner for PSK or PAM data applications 失效
标题翻译：调谐器用于PSK或PAM数据应用
公开(公告)号：US6052571A
公开(公告)日：2000-04-18
申请号：US969253
申请日：1997-11-13
申请人： Akira Mishima , Shigeharu Sumi , Motoyoshi Kitagawa
发明人： Akira Mishima , Shigeharu Sumi , Motoyoshi Kitagawa
IPC分类号： H01F21/02 , H01F21/04 , H01F41/04 , H03B5/18 , H03J1/00 , H03J1/14 , H03J3/00 , H03J7/06 , H03L7/099 , H03L7/18 , H04L27/152 , H04L27/227 , H04L27/233 , H03J3/28 , H03J5/02 , H03L7/08 , H04L27/22
CPC分类号： H03L7/0805 , H01F21/02 , H01F21/04 , H01F41/045 , H03B5/1841 , H03J1/0041 , H03J1/005 , H03J1/14 , H03J3/00 , H03J7/065 , H03L7/099 , H03L7/18 , H04L27/152 , H04L27/227 , H04L27/233
摘要： A high frequency apparatus for receiving digitally modulated high frequency signals withstands vibration and has a simple tuning adjustment. The apparatus has an input terminal, a mixer which mixes the input signals and an output signal from a local oscillator, a voltage controlled oscillator which includes the local oscillator, an oscillating section, a movable conductive member and, a gluing agent for maintaining an adjusted state, and a control loop having a high loop band width which is large enough so that noise of the local oscillator is not dominated by noise of the voltage controlled oscillator.
摘要翻译：一种用于接收经数字调制的高频信号经受振动并具有简单的调谐调节的高频装置。该装置具有输入端子，混合输入信号和来自本地振荡器的输出信号的混频器，包括本地振荡器的压控振荡器，振荡部分，可移动导电部件和用于保持调节的粘合剂状态和具有足够大的高环路带宽的控制环路，使得本地振荡器的噪声不受压控振荡器的噪声的支配。

18. 发明授权

US5355532A Television tuner unit having shield housing 失效
标题翻译：具有屏蔽外壳的电视调谐器单元
公开(公告)号：US5355532A
公开(公告)日：1994-10-11
申请号：US31056
申请日：1993-03-29
申请人： Kazuhiko Kubo , Akira Usui , Akira Mishima
发明人： Kazuhiko Kubo , Akira Usui , Akira Mishima
IPC分类号： H03D7/16 , H03J5/24 , H04B1/16 , H04N5/44 , H04N7/20 , H04B1/10
CPC分类号： H03J5/242 , H03D7/161
摘要： The present invention relates to a television tuner capable of receiving television broadcasting, CATV and satellite broadcasting. The television tuner includes a double superheterodyne tuner for receiving television signals, having an up-converter, a down-converter and a coupler for coupling the up-converter and down-converter, and the television tuner also includes a BS second mixer portion and a FM demodulator, for receiving signals from a broadcasting satellite. The double superheterodyne tuner, the BS second mixer portion and the FM demodulator are disposed in a housing, a combination of the up-converter and the BS second mixer portion is desiredly separated from the down-converter, the coupler is disposed in a space between the combination and the down-converter, and the FM demodulator is disposed in the remaining space of the housing.
摘要翻译：本发明涉及能够接收电视广播，有线电视和卫星广播的电视调谐器。电视调谐器包括用于接收电视信号的双重超外差调谐器，具有用于耦合上变频器和下变频器的上变频器，下变频器和耦合器，并且电视调谐器还包括BS第二混频器部分和 FM解调器，用于从广播卫星接收信号。双重超外差调谐器，BS第二混频器部分和FM解调器设置在壳体中，上变频器和BS第二混频器部分的组合期望地与下变换器分离，耦合器设置在组合和下变频器以及FM解调器被布置在壳体的剩余空间中。

19. 发明授权

US08514541B2 Injector drive circuit 失效
标题翻译：喷油器驱动电路
公开(公告)号：US08514541B2
公开(公告)日：2013-08-20
申请号：US13034151
申请日：2011-02-24
申请人： Ayumu Hatanaka , Akira Mishima , Takuya Mayuzumi , Mitsuhiko Watanabe , Fumiaki Nasu
发明人： Ayumu Hatanaka , Akira Mishima , Takuya Mayuzumi , Mitsuhiko Watanabe , Fumiaki Nasu
IPC分类号： H01H47/00
CPC分类号： F02D41/20 , F02D41/402 , F02D2041/2003 , F02D2041/2006 , F02D2041/201 , F02D2041/2051 , F02D2041/389
摘要： The present invention realizes an injector drive circuit capable of providing high output power of a boost convertor while suppressing increases in size and cost thereof. An injector energizing circuit 200 includes an FET 2 which applies a high voltage 100a generated by a boost convertor 100 to an injection valve 20. The boost convertor 100 includes an input side capacitor 103, a boosting FET 105, a boost coil 104, a boost diode 106, and FETs 108 and 109 provided in association with a negative pole of an output side capacitor 107. During a period in which the high voltage 100a is applied to the injection valve 20, a gate signal 108a of the FET 108 is turned ON and a gate signal 109a of the FET 109 is turned OFF. Consequently, the boosting FET 105 performs a switching operation to turn OFF the gate signal 108a of the FET 108 and turn ON the gate signal 109a of the FET 109 during a period for charging into the output side capacitor 107. Thus, energy required for boosting can be reduced and an improvement in output is enabled.
摘要翻译：本发明实现了一种喷射器驱动电路，其能够在抑制升压转换器的大小和成本的同时提供高输出功率。喷射器激励电路200包括将由升压转换器100产生的高电压100a施加到喷射阀20的FET2。升压转换器100包括输入侧电容器103，升压FET 105，升压线圈104，升压二极管106和与输出侧电容器107的负极相关联地设置的FET 108和109.在将高电压100a施加到喷射阀20的期间中，FET 108的栅极信号108a导通并且FET109的栅极信号109a断开。因此，升压FET 105进行切换动作，使FET108的栅极信号108a截止，并在对输出侧电容器107充电的期间内导通FET109的栅极信号109a。因此，升压所需的能量可以减少输出的改善。

20. 发明授权

US08035222B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08035222B2
公开(公告)日：2011-10-11
申请号：US12968534
申请日：2010-12-15
申请人： Kentaro Ochi , Akira Mishima , Takuro Kanazawa , Tetsuo Iijima , Katsuo Ishizaka , Norio Kido
发明人： Kentaro Ochi , Akira Mishima , Takuro Kanazawa , Tetsuo Iijima , Katsuo Ishizaka , Norio Kido
IPC分类号： H01L23/34
CPC分类号： H01L23/3107 , H01L23/49568 , H01L23/49575 , H01L24/33 , H01L25/115 , H01L2224/32245 , H01L2924/1301 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. the third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.
摘要翻译：提供了通过使用半导体封装形成的半导体器件。半导体器件包括在感应导体上相邻布置的两个半导体封装。两个半导体封装的端子由第三引线连接。第三引线被布置成基本上平行于感应导体。接头部分处的引线例如具有弯曲结构，并且第三引线布置成靠近感应导体。

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