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1. 发明申请

US20050161785A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050161785A1
公开(公告)日：2005-07-28
申请号：US11041200
申请日：2005-01-25
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/28 , H01L21/52 , H01L23/02 , H01L23/34 , H01L23/36 , H01L23/495 , H01L25/04 , H01L25/07 , H01L25/18 , H01L27/00
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子 GT1形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线如图6所示，漏极端子DT2形成在芯片3的背面，输出侧板状引线6与漏极端子DT2连接。此外，形成源极端子ST2和栅极端子GT2 在同步功率MOSFET芯片3的主表面上，并且源极端子ST2连接到用于源极13的板状引线。用于源极12和13的板状引线被暴露，因此，增加MCM 1的散热能力。

2. 再颁专利

USRE43663E1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：USRE43663E1
公开(公告)日：2012-09-18
申请号：US12821999
申请日：2010-06-23
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/02 , H01L23/12
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子GT1为形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线6上，并且漏极端子DT2形成在芯片3的后表面上，并且输出侧板状引线6连接到漏极端子DT2。此外，源极端子ST2和栅极端子GT2形成在同步功率MOSFET芯片3的主表面上，源极端子ST2连接到源极13的板状引线。源极12和13的板状引线被曝光，因此可以提高MCM 1的散热能力。

3. 再颁专利

USRE41869E1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：USRE41869E1
公开(公告)日：2010-10-26
申请号：US12130782
申请日：2008-05-30
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/02 , H01L23/12
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子GT1为形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线6上，并且漏极端子DT2形成在芯片3的后表面上，并且输出侧板状引线6连接到漏极端子DT2。此外，源极端子ST2和栅极端子GT2形成在同步功率MOSFET芯片3的主表面上，源极端子ST2连接到源极13的板状引线。源极12和13的板状引线被曝光，因此可以提高MCM 1的散热能力。

4. 发明授权

US07145224B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07145224B2
公开(公告)日：2006-12-05
申请号：US11041200
申请日：2005-01-25
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/02 , H01L23/12
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子 GT1形成在芯片2的主表面上，源极端子ST1连接到源极12的板状引线。此外，在输出侧板状引线6上配置有同步功率MOSFET芯片3，在芯片3的背面形成漏极端子DT2，将输出侧板状引线6连接到漏极端子DT 2。此外，源极端子ST2和栅极端子GT2形成在同步功率MOSFET芯片3的主表面上，源极端子ST2连接到源极13的板状引线。用于源12和13的板状引线被暴露，因此可以增加MCM 1的散热能力。

5. 发明申请

US20140226380A1 POWER CONVERSION APPARATUS 有权
标题翻译：功率转换装置
公开(公告)号：US20140226380A1
公开(公告)日：2014-08-14
申请号：US14125924
申请日：2012-09-20
申请人： Tetsuya Kawashima
发明人： Tetsuya Kawashima
IPC分类号： H02M7/539
CPC分类号： H02M7/539 , H02M7/48 , H02M7/53873 , H02M2001/0009
摘要： A current flowing into one of half-bridge circuits of a power semiconductor module (10) is detected by corresponding one of current detection circuits (11a and 11b to 11f) through a current detection terminal provided in corresponding one of semiconductor switching devices (Q1 and Q2 to Q6) forming the half-bridge circuits and a current detection terminal provided in corresponding one of flywheel diodes (D1 and D2 to D6) back-to-back connected to the corresponding one of the semiconductor switching devices (Q1 and Q2 to Q6). A pulse voltage waveform indicating the current detected by the corresponding one of the current detection circuits (11a and 11b to 11f) is held for a predetermined period and converted into a stepwise voltage waveform by use of corresponding one of sample-and-hold circuits (14a, 14b and 14f), so that the voltage held by the corresponding one of the sample-and-hold circuits (14a, 14b and 14c) is transmitted to a control circuit (20) through corresponding one of insulating circuits (14a, 14b and 14c).
摘要翻译：流入功率半导体模块（10）的半桥电路之一的电流通过相应的一个电流检测电路（11a和11b至11f）通过设置在相应的一个半导体开关器件（Q1和 Q2和Q6）形成半桥电路，以及设置在相应的一个续流二极管（D1和D2至D6）中的电流检测端子，背对背连接到相应的一个半导体开关器件（Q1和Q2至Q6））。指示由相应的一个电流检测电路（11a和11b至11f）检测的电流的脉冲电压波形保持预定时间段，并且通过使用相应的一个采样和保持电路（使得由相应的一个采样保持电路（14a，14b和14c）保持的电压通过相应的一个绝缘电路（14a，14b）传输到控制电路（20）和14c）。

6. 发明授权

US08558527B2 Switching power supply system provided with under voltage lock out circuit 有权
标题翻译：开关电源系统配有欠压锁定电路
公开(公告)号：US08558527B2
公开(公告)日：2013-10-15
申请号：US13109331
申请日：2011-05-17
申请人： Masahiro Sasaki , Tetsuya Kawashima
发明人： Masahiro Sasaki , Tetsuya Kawashima
IPC分类号： G05F1/00
CPC分类号： H02M1/32 , H02M1/36 , H02M3/1588 , H02M2001/0012 , Y02B70/1466
摘要： A switching power supply system controlling switching operations of switching devices by a control circuit to convert an input voltage into a desired output voltage, the system being provided with a under voltage lock out circuit including: an input voltage detection unit detecting an input voltage and producing an input voltage digital signal corresponding to the input voltage Vin; and a voltage level comparison unit carrying out digital comparison of the input voltage digital signal with each of two voltage detection level data and outputting the results of the comparisons as an output signal, in which by changing voltage detection level data stored in two registers, desired voltage detection levels and hysteresis characteristic are easily actualized.
摘要翻译：一种开关电源系统，其通过控制电路来控制开关器件的开关动作，将输入电压转换成期望的输出电压，所述系统配备有欠压锁定电路，包括：输入电压检测单元，检测输入电压并产生对应于输入电压Vin的输入电压数字信号; 以及电压电平比较单元，对输入电压数字信号与两个电压检测电平数据中的每一个进行数字比较，并输出比较结果作为输出信号，其中通过改变存储在两个寄存器中的电压检测电平数据为期望的电压检测电平和滞后特性容易实现。

7. 发明授权

US08237232B2 Semiconductor device including a DC-DC converter having a metal plate 失效
标题翻译：包括具有金属板的DC-DC转换器的半导体器件
公开(公告)号：US08237232B2
公开(公告)日：2012-08-07
申请号：US13050313
申请日：2011-03-17
申请人： Tomoaki Uno , Nobuyoshi Matsuura , Yukihiro Sato , Keiichi Okawa , Tetsuya Kawashima , Kisho Ashida
发明人： Tomoaki Uno , Nobuyoshi Matsuura , Yukihiro Sato , Keiichi Okawa , Tetsuya Kawashima , Kisho Ashida
IPC分类号： H01L23/02 , H01L31/111
CPC分类号： H01L23/50 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4847 , H01L2224/48624 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/05042 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/207
摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.
摘要翻译：提高了半导体器件的电气特性。在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。金属板包括与第二半导体芯片的焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分和从第一部分的长边延伸到第三部分的第三部分引线。

8. 发明授权

US08044520B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044520B2
公开(公告)日：2011-10-25
申请号：US11624767
申请日：2007-01-19
申请人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
发明人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
IPC分类号： H01L23/52 , H01L29/40
CPC分类号： H01L25/16 , H01L24/37 , H01L24/40 , H01L2224/05554 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H02M3/1588 , H03K17/08142 , H03K17/162 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要翻译：一种能够减少大电流和高频损耗的电源。在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的时间短于连接驱动器IC芯片的输出端子与栅极端子的布线DH的布线长度高端功率MOSFET芯片或源极端子。此外，使布线数量DL大于布线数量DH。

9. 发明申请

US20070278516A1 Semiconductor device and power source unit using the same 有权
标题翻译：半导体器件和电源单元使用相同
公开(公告)号：US20070278516A1
公开(公告)日：2007-12-06
申请号：US11809023
申请日：2007-05-30
申请人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
IPC分类号： H01L31/111
CPC分类号： H01L25/16 , G06F1/26 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/40 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.
摘要翻译：本发明提供一种降低电源单元的主电路的寄生电感的技术。在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

10. 发明申请

US20070090814A1 Semiconductor device and power supply device using the same 有权
标题翻译：半导体装置及使用该装置的电源装置
公开(公告)号：US20070090814A1
公开(公告)日：2007-04-26
申请号：US11585226
申请日：2006-10-24
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： G05F1/613
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

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