会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Electron beam exposure mask, electron beam exposure method, and electron beam exposure system
    • 电子束曝光掩模,电子束曝光法和电子束曝光系统
    • US07847272B2
    • 2010-12-07
    • US11235422
    • 2005-09-26
    • Hiroshi YasudaAkio Yamada
    • Hiroshi YasudaAkio Yamada
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00G03F1/20H01J2237/31769
    • An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
    • 电子束曝光系统设计用于校正邻近效应。 电子束曝光系统包括:用于产生电子束的电子束产生单元; 电子束曝光掩模,其具有开口部,其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。 改变的方向或方向可以是行方向和列方向中的任何一个,或者可以是行和列方向。