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    • 12. 发明授权
    • Method for recovery of tungsten from spent catalysts
    • 从废催化剂中回收钨的方法
    • US5932184A
    • 1999-08-03
    • US271569
    • 1992-05-26
    • Michael J. MillerClarence D. Vanderpool
    • Michael J. MillerClarence D. Vanderpool
    • B01J38/00C01G41/00C22B7/00C22B34/36
    • C01G41/00C22B34/365C22B7/009Y02P10/214Y02P10/23Y02P10/234
    • A method for recovering tungsten from a tungsten containing spent catalyst comprises digesting the catalyst in aqueous sodium hydroxide solution wherein the mole ratio of the sodium hydroxide to the tungsten contained in the spent catalyst is from about 2.6 to about 4.2 and wherein the amount of water is sufficient to dissolve the subsequently produced sodium tungstate, at a temperature of at least about 90.degree. C. for a length of time of at least about 1 hour to convert greater than about 77% by weight of the tungsten contained in the spent catalyst to sodium tungstate and form a sodium tungstate solution thereof and a residue containing the balance of the starting tungsten, and separating the sodium tungstate solution from the residue. Essentially all of the tungsten is recovered as sodium tungstate by first grinding the catalyst prior to the digestion and by using a mole ratio of sodium hydroxide to tungsten of about 3.8 to 4.2.
    • 从含钨废催化剂中回收钨的方法包括在氢氧化钠水溶液中消化催化剂,其中氢氧化钠与废催化剂中所含的钨的摩尔比为约2.6至约4.2,其中水的量为 足以在随后产生的钨酸钠溶解在至少约90℃的温度下至少约1小时的时间,以将废催化剂中所含的钨的大于约77重量%转化为钠 形成钨酸钠溶液和含余量起始钨的残余物,并从残余物中分离出钨酸钠溶液。 通过在消化之前首先研磨催化剂和通过使用约3.8至4.2的氢氧化钠与钨的摩尔比,基本上所有的钨作为钨酸钠回收。
    • 14. 发明授权
    • Process for recovering tungsten as an ammoniacal tungstate compound in
which ammoniacal tungstate liquors are reclaimed
    • 用于回收钨作为氨基钨酸盐化合物的方法,其中回收了氨基钨酸盐液体
    • US5417945A
    • 1995-05-23
    • US795310
    • 1991-11-14
    • Richard G. W. GingerichJames N. ChristiniMartin C. VogtClarence D. VanderpoolMichael J. Miller
    • Richard G. W. GingerichJames N. ChristiniMartin C. VogtClarence D. VanderpoolMichael J. Miller
    • C01G41/00
    • C01G41/003C01G41/00
    • A process for recovering tungsten as an ammoniacal tungstate which comprises reacting a tungsten containing material with sodium hydroxide to produce sodium tungstate and forming a first aqueous sodium tungstate solution therefrom, crystallizing sodium tungstate from the first aqueous sodium tungstate solution, dissolving the resulting sodium tungstate crystals in an aqueous medium to form a second aqueous sodium tungstate solution, extracting tungsten from the second aqueous sodium tungstate solution with an organic extracting agent wherein the extracting agent containing tungsten is capable of being stripped of the extracted tungsten by ammonia, and thereafter stripping the extracted tungsten from the organic extracting agent with ammonia to form an ammoniacal tungstate solution, crystallizing a portion of the tungsten contained in the ammoniacal tungstate solution to form a two phase system wherein an ammoniacal tungstate compound comprises the first phase and wherein the resulting mother liquor containing the balance of the contained tungsten comprises the second phase, and repeating the process using the mother liquor as at least a portion of the aqueous medium to dissolve the sodium tungstate crystals.
    • 一种用于回收钨作为钨酸钨的方法,其包括使含钨材料与氢氧化钠反应以产生钨酸钠并从其中形成第一含水钨酸钠溶液,从第一钨酸钠水溶液中使钨酸钠结晶,将所得的钨酸钠晶体 在水性介质中形成第二钨酸钠水溶液,用有机萃取剂从第二钨酸钠水溶液中提取钨,其中含有钨的萃取剂能够用氨除去提取的钨,然后将提取的 钨从有机萃取剂中与氨反应形成一种氨基钨酸盐溶液,使一部分钨酸铵溶液中所含的钨结晶形成两相体系,其中氨基钨酸盐化合物包含第一相,其中所得的 含有所含钨的余量的母液包括第二相,并且重复使用母液作为至少一部分水性介质以溶解钨酸钠晶体的方法。
    • 19. 发明授权
    • Integrated circuit package with segregated Tx and Rx data channels
    • 集成电路封装,具有隔离的Tx和Rx数据通道
    • US08368217B2
    • 2013-02-05
    • US13541658
    • 2012-07-03
    • Michael J. MillerMark William BaumannRichard S. Roy
    • Michael J. MillerMark William BaumannRichard S. Roy
    • H01L23/48
    • H01L23/50H01L2924/0002H01L2924/00
    • A chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. Tx terminals are grouped contiguously to each other, and are segregated as a group to a given edge of the package, Rx terminals are similarly grouped and segregated to a different edge of the package. Tx and Rx data channels are disposed in a respective single layer of the package, or both are disposed in a same single layer of the package. Rx ports and Tx ports are located at an approximate center of the package, with Tx and Rx ports disposed on respective opposite sides of an axis bisecting the package. Data signals received by, and transmitted from, the chip flow in a same direction, from a first edge of the package to the center of the package and from the center of the package to a second edge of the package, respectively.
    • 芯片布局将Rx端子和Rx端口与Tx端子和Tx端口隔离。 Tx端子彼此连续分组,并且作为组分离到包装的给定边缘,Rx端子被类似地分组并分离到包装的不同边缘。 Tx和Rx数据通道设置在封装的相应单层中,或者两者都被布置在封装的相同的单层中。 Rx端口和Tx端口位于封装的大致中心处,Tx和Rx端口设置在平分封装的轴的相应相对两侧。 分别从包装的第一边缘到包装的中心以及从包装的中心到包装的第二边缘的相同方向从芯片流接收和传输的数据信号。
    • 20. 发明申请
    • INTEGRATED CIRCUIT PACKAGE WITH SEGREGATED TX AND RX DATA CHANNELS
    • 集成电路封装与分离的TX和RX数据通道
    • US20120267769A1
    • 2012-10-25
    • US13541658
    • 2012-07-03
    • Michael J. MillerMark BaumannRichard S. Roy
    • Michael J. MillerMark BaumannRichard S. Roy
    • H01L23/58
    • H01L23/50H01L2924/0002H01L2924/00
    • A chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. Tx terminals are grouped contiguously to each other, and are segregated as a group to a given edge of the package, Rx terminals are similarly grouped and segregated to a different edge of the package. Tx and Rx data channels are disposed in a respective single layer of the package, or both are disposed in a same single layer of the package. Rx ports and Tx ports are located at an approximate center of the package, with Tx and Rx ports disposed on respective opposite sides of an axis bisecting the package. Data signals received by, and transmitted from, the chip flow in a same direction, from a first edge of the package to the center of the package and from the center of the package to a second edge of the package, respectively.
    • 芯片布局将Rx端子和Rx端口与Tx端子和Tx端口隔离。 Tx端子彼此连续分组,并且作为组分离到包装的给定边缘,Rx端子被类似地分组并分离到包装的不同边缘。 Tx和Rx数据通道设置在封装的相应单层中,或者两者都被布置在封装的相同的单层中。 Rx端口和Tx端口位于封装的大致中心处,Tx和Rx端口设置在平分封装的轴的相应相对两侧。 分别从包装的第一边缘到包装的中心以及从包装的中心到包装的第二边缘的相同方向从芯片流接收和传输的数据信号。