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    • 11. 发明申请
    • Pattern forming method and method of manufacturing semiconductor device
    • 图案形成方法和制造半导体器件的方法
    • US20100099036A1
    • 2010-04-22
    • US12654295
    • 2009-12-16
    • Daisuke KawamuraShinichi Ito
    • Daisuke KawamuraShinichi Ito
    • G03F7/20
    • G03F7/11G03F7/70341G03F7/7065G03F7/70958Y10S430/162
    • A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.
    • 图案形成方法包括在基板上形成抗蚀剂膜,在抗蚀剂膜上形成覆盖膜的涂布溶液涂布抗蚀膜,在抗蚀剂膜上形成覆盖膜,通过浸渍将图案转印到抗蚀剂膜上 使用液浸液体在抗蚀剂膜上形成潜像的光刻方法,在形成潜像后去除覆盖膜,进行第一次检查以检查覆盖膜在形成潜像之间是否存在缺陷 并且在所述第一检查中发现所述缺陷时,移除所述覆盖膜,执行预定处理,以及在除去所述覆盖膜之后,在所述基板上显影所述抗蚀剂膜以形成抗蚀剂图案。
    • 17. 发明申请
    • Pattern forming method and method of manufacturing semiconductor device
    • 图案形成方法和制造半导体器件的方法
    • US20060177777A1
    • 2006-08-10
    • US11350080
    • 2006-02-09
    • Daisuke KawamuraShinichi Ito
    • Daisuke KawamuraShinichi Ito
    • G03F7/20
    • G03F7/11G03F7/70341G03F7/7065G03F7/70958Y10S430/162
    • A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.
    • 图案形成方法包括在基板上形成抗蚀剂膜,在抗蚀剂膜上形成覆盖膜的涂布溶液涂布抗蚀膜,在抗蚀剂膜上形成覆盖膜,通过浸渍将图案转印到抗蚀剂膜上 使用液浸液体在抗蚀剂膜上形成潜像的光刻方法,在形成潜像后去除覆盖膜,进行第一次检查以检查覆盖膜在形成潜像之间是否存在缺陷 并且在所述第一检查中发现所述缺陷时,移除所述覆盖膜,执行预定处理,以及在除去所述覆盖膜之后,在所述基板上显影所述抗蚀剂膜以形成抗蚀剂图案。