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    • 8. 发明授权
    • Method of generating writing pattern, method of forming resist pattern, method of controlling exposure tool, and method of manufacturing semiconductor device
    • 产生书写图案的方法,形成抗蚀剂图案的方法,控制曝光工具的方法以及制造半导体器件的方法
    • US07749665B2
    • 2010-07-06
    • US11108751
    • 2005-04-19
    • Daisuke KawamuraShinichi Ito
    • Daisuke KawamuraShinichi Ito
    • G03F9/00
    • G03F7/70616G03F7/70341G03F7/70433G03F7/70441
    • A method of generating a writing pattern is disclosed, which generates, from pattern data, writing pattern data to write a mask pattern in a photomask used in an exposure tool comprising a projection optical system to transfer the mask pattern to a resist film formed on a substrate, an immersion mechanism which forms a liquid film in a local region, and a movement mechanism which moves the substrate with respect to the projection optical system and the immersion mechanism, the method comprising obtaining a typical distribution of contact history values between the resist film and the liquid film in the unit exposure region, dividing a pattern which corresponds to the pattern data into a plurality of regions according to the typical distribution of the contact history values, and carrying out correction of a pattern included in each of the divided regions under a rule according to the contact history values.
    • 公开了一种生成写入图案的方法,其从图案数据生成写入图案数据以将掩模图案写入用于包括投影光学系统的曝光工具中的光掩模中,以将掩模图案转印到形成在 基板,在局部区域形成液膜的浸渍机构,以及相对于投影光学系统和浸渍机构移动基板的移动机构,所述方法包括获得抗蚀剂膜之间的接触历史值的典型分布 和单位曝光区域中的液膜,根据接触历史值的典型分布将与图案数据对应的图案分割成多个区域,并对包含在每个分割区域内的图案进行校正 根据联系历史值的规则。
    • 9. 发明申请
    • Pattern forming method and method of manufacturing semiconductor device
    • 图案形成方法和制造半导体器件的方法
    • US20100099036A1
    • 2010-04-22
    • US12654295
    • 2009-12-16
    • Daisuke KawamuraShinichi Ito
    • Daisuke KawamuraShinichi Ito
    • G03F7/20
    • G03F7/11G03F7/70341G03F7/7065G03F7/70958Y10S430/162
    • A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.
    • 图案形成方法包括在基板上形成抗蚀剂膜,在抗蚀剂膜上形成覆盖膜的涂布溶液涂布抗蚀膜,在抗蚀剂膜上形成覆盖膜,通过浸渍将图案转印到抗蚀剂膜上 使用液浸液体在抗蚀剂膜上形成潜像的光刻方法,在形成潜像后去除覆盖膜,进行第一次检查以检查覆盖膜在形成潜像之间是否存在缺陷 并且在所述第一检查中发现所述缺陷时,移除所述覆盖膜,执行预定处理,以及在除去所述覆盖膜之后,在所述基板上显影所述抗蚀剂膜以形成抗蚀剂图案。