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11. 发明授权

US06452213B1 SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
公开(公告)号：US06452213B1
公开(公告)日：2002-09-17
申请号：US09696002
申请日：2000-10-26
申请人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L29786
CPC分类号： H01L29/66757 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/78603 , H01L29/78621 , H01L29/78633 , H01L29/78675
摘要： A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
摘要翻译：第一薄膜形成在绝缘基底的一个表面上，并且在第一薄膜上形成具有高于第一薄膜的导热率的第二薄膜。至少在第二薄膜上形成具有比第二薄膜更高的热导率的非晶半导体薄膜。通过激光退火将非晶半导体薄膜变为多晶半导体薄膜。提供第二薄膜导致多晶半导体薄膜中更大且均匀的晶粒直径和较少的保护性。

12. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

13. 发明授权

US08319225B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08319225B2
公开(公告)日：2012-11-27
申请号：US12611951
申请日：2009-11-04
申请人： Takahiro Kamo , Takeshi Noda
发明人： Takahiro Kamo , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678 , H01L29/78696
摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.
摘要翻译：显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

14. 发明申请

US20100226813A1 HIGH TENSILE STRENGTH STEEL AND MARINE STRUCTURE HAVING EXCELLENT WELD TOUGHNESS 审中-公开
标题翻译：具有优异焊接韧性的高强度钢和海洋结构
公开(公告)号：US20100226813A1
公开(公告)日：2010-09-09
申请号：US12557892
申请日：2009-09-11
申请人： Takahiro Kamo , Takeshi Urabe , Hirofumi Nakamura , Kazushi Ohnishi , Masahiko Hamada
发明人： Takahiro Kamo , Takeshi Urabe , Hirofumi Nakamura , Kazushi Ohnishi , Masahiko Hamada
IPC分类号： C22C38/42 , C22C38/16 , C22C38/08 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , C22C38/20
CPC分类号： C22C38/42 , C22C38/02 , C22C38/44 , C22C38/48
摘要： In order to provide a high tensile strength steel having excellent low temperature toughness and which can withstand large heat input welding, a steel comprises, in mass percent, C: 0.01-0.10%, Si: at most 0.5%, Mn: 0.8-1.8%, P: at most 0.020%, S: at most 0.01%, Cu: 0.8-1.5%, Ni: 0.2-1.5%, Al: 0.001-0.05%, N: 0.0030-0.0080%, O: 0.0005-0.0035%, if necessary at least one of Ti: 0.005-0.03%, Nb: 0.003-0.03%, and Mo: 0.1-0.8%, and a remainder of Fe and impurities, and the N/Al ratio is 0.3-3.0.
摘要翻译：为了提供具有优异的低温韧性并且能够承受大的热输入焊接的高抗拉强度钢，以质量％计含有C：0.01-0.10％，Si：至多0.5％，Mn：0.8-1.8 ％，P：0.020％以下，S：0.01％以下，Cu：0.8〜1.5％，Ni：0.2〜1.5％，Al：0.001-0.05％，N：0.0030-0.0080％，O：0.0005〜0.0035％如果需要，Ti：0.005-0.03％，Nb：0.003-0.03％，Mo：0.1-0.8％中的至少一种，剩余的Fe和杂质，N / Al比为0.3-3.0。

15. 发明授权

US07619251B2 Laser crystallization method suppressing propagation of cracks forming a display device 有权
标题翻译：抑制形成显示装置的裂纹扩散的激光结晶化方法
公开(公告)号：US07619251B2
公开(公告)日：2009-11-17
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L29/04 , H01L31/036 , H01L21/84 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要翻译：用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

16. 发明授权

US07491972B1 Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device 有权
标题翻译：多晶硅半导体薄膜基板，其制造方法，半导体器件和电子器件
公开(公告)号：US07491972B1
公开(公告)日：2009-02-17
申请号：US10019407
申请日：2000-06-23
申请人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/66757
摘要： A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.
摘要翻译：一种半导体器件及其制造方法，其通过在绝缘性基板的表面上形成非晶半导体膜，并用激光束照射所述非晶半导体膜，使其结晶而形成多晶半导体薄膜。然后在多晶半导体薄膜中形成晶体管。更具体地，将紫外线照射到绝缘基板或非晶半导体膜的背面，以将非晶半导体膜加热至熔融温度以下。然后以合适的形状选择激光能量密度Ec的激光束形成最主要被照射的最接近晶粒数6的晶粒，以将非晶半导体膜转换为多晶半导体薄膜。在该结构中形成的薄膜晶体管具有高产率并且能够高速操作。

17. 发明申请

US20060270130A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060270130A1
公开(公告)日：2006-11-30
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L21/84 , H01L29/76
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.
摘要翻译：在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。用CW激光束照射除基板切断位置CUT附近的基板GLS。衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

18. 发明申请

US20050266594A1 Manufacturing method for display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20050266594A1
公开(公告)日：2005-12-01
申请号：US11138471
申请日：2005-05-27
申请人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1229 , H01L27/1285
摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.
摘要翻译：一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中，在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

19. 发明申请

US20100230675A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100230675A1
公开(公告)日：2010-09-16
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L33/16 , H01L33/02
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

20. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

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