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11. 发明授权

US06943081B2 Method of forming storage nodes comprising a base in a contact hole and related structures 失效
标题翻译：形成存储节点的方法，包括在接触孔中的基座和相关结构
公开(公告)号：US06943081B2
公开(公告)日：2005-09-13
申请号：US10445426
申请日：2003-05-27
申请人： Won-Jun Lee , In-Seak Hwang , Ji-Chul Shin
发明人： Won-Jun Lee , In-Seak Hwang , Ji-Chul Shin
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242
CPC分类号： H01L27/10855 , H01L27/10814 , H01L28/91
摘要： Methods of forming an electronic structure can include forming an interlayer insulating layer on a substrate, and forming a storage node comprising a base and sidewalls extending away from the base. The interlayer insulating layer can have a contact hole therein exposing a portion of the substrate. Moreover, the storage node base can be in the contact hole and the sidewalls can extend away from the base and away from the substrate with portions of the sidewalls being within the contact hole and with portions of the sidewalls extending outside the contact hole beyond the interlayer insulating layer away from the substrate. Related structures are also discussed.
摘要翻译：形成电子结构的方法可以包括在基板上形成层间绝缘层，以及形成包括基底和远离基底延伸的侧壁的存储节点。层间绝缘层可以具有暴露一部分基板的接触孔。此外，存储节点基座可以在接触孔中，并且侧壁可以远离基部延伸并远离基板，其中侧壁的一部分在接触孔内并且侧壁的部分延伸到接触孔的外部超过中间层绝缘层远离基板。还讨论了相关结构。

12. 发明申请

US20080220375A1 Methods of reworking a semiconductor substrate and methods of forming a pattern in a semiconductor device 审中-公开
标题翻译：半导体衬底的再加工方法以及在半导体器件中形成图案的方法
公开(公告)号：US20080220375A1
公开(公告)日：2008-09-11
申请号：US12074430
申请日：2008-03-04
申请人： Kyoung-Chul Kim , Bong-Chan Kim , In-Seak Hwang , Kwang-Wook Lee
发明人： Kyoung-Chul Kim , Bong-Chan Kim , In-Seak Hwang , Kwang-Wook Lee
IPC分类号： G03F7/26 , G03F7/30
CPC分类号： G03F7/091 , G03F7/40 , G03F7/42
摘要： In a method of reworking a substrate, an organic anti-reflection coating (ARC) layer is formed on the substrate having an amorphous carbon pattern. A photoresist pattern is formed on the organic ARC layer. The photoresist pattern is entirely exposed when the photoresist pattern has a selected level of defects, and then the photoresist pattern is removed by a developing process. The substrate may be reworked without damaging the organic ARC layer, and the amorphous carbon pattern may include an alignment key and/or an overlay key.
摘要翻译：在对衬底进行再加工的方法中，在具有无定形碳图案的衬底上形成有机抗反射涂层（ARC）层。在有机ARC层上形成光刻胶图形。当光致抗蚀剂图案具有选定的缺陷水平时，光致抗蚀剂图案完全曝光，然后通过显影过程去除光致抗蚀剂图案。可以对衬底进行再加工而不损坏有机ARC层，并且非晶碳图案可以包括对准键和/或覆盖键。

13. 发明授权

US07405164B2 Apparatus and method for removing a photoresist structure from a substrate 有权
公开(公告)号：US07405164B2
公开(公告)日：2008-07-29
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

14. 发明申请

US20070138126A1 Methods of forming a conductive structure 审中-公开
标题翻译：形成导电结构的方法
公开(公告)号：US20070138126A1
公开(公告)日：2007-06-21
申请号：US11604825
申请日：2006-11-28
申请人： Keum-Joo Lee , In-Seak Hwang , Jong-Won Kim
发明人： Keum-Joo Lee , In-Seak Hwang , Jong-Won Kim
IPC分类号： H01B13/00 , B44C1/22 , C03C25/68 , C03C15/00
CPC分类号： H01L27/115 , H01L27/11521
摘要： Example embodiments relate to a method of forming a conductive structure. Other example embodiments relate to a method of forming a conductive structure capable of storing or transmitting electric charges. In example embodiments, when a conductive structure including first and second conductive patterns extending in a first horizontal direction is formed, at least one of the first and second conductive patterns may decreases in size. When the conductive structure is vertically bisected in a second horizontal direction perpendicular to the first horizontal direction to form conductive members, a coupling effect generated between the conductive members adjacent to each other may be reduced.
摘要翻译：示例性实施例涉及形成导电结构的方法。其他示例性实施例涉及形成能够存储或传输电荷的导电结构的方法。在示例性实施例中，当形成包括在第一水平方向上延伸的第一和第二导电图案的导电结构时，第一和第二导电图案中的至少一个尺寸可能减小。当导电结构在与第一水平方向垂直的第二水平方向上垂直平分以形成导电构件时，可以减少彼此相邻的导电构件之间产生的耦合效应。

15. 发明申请

US20070020943A1 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US20070020943A1
公开(公告)日：2007-01-25
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

16. 发明申请

US20060287208A1 Methods of Forming Corrosion-Inhibiting Cleaning Compositions for Metal Layers and Patterns on Semiconductor Substrates 审中-公开
标题翻译：在半导体基板上形成金属层和图案的腐蚀抑制清洁组合物的方法
公开(公告)号：US20060287208A1
公开(公告)日：2006-12-21
申请号：US11467736
申请日：2006-08-28
申请人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
发明人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
IPC分类号： C11D7/32
CPC分类号： H01L21/02071 , C11D3/0084 , C11D7/3281 , C11D11/0047 , C23G1/106
摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
摘要翻译：用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

17. 发明申请

US20060270241A1 METHOD OF REMOVING A PHOTORESIST PATTERN AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：移除光电子图案的方法和使用其制造半导体器件的方法
公开(公告)号：US20060270241A1
公开(公告)日：2006-11-30
申请号：US11420943
申请日：2006-05-30
申请人： Kyoung-Chul Kim , Dae-Keun Kang , Se-Ho Cha , In-Seak Hwang , Keum-Joo Lee
发明人： Kyoung-Chul Kim , Dae-Keun Kang , Se-Ho Cha , In-Seak Hwang , Keum-Joo Lee
IPC分类号： B08B3/00 , C23G1/00 , H01L21/302
CPC分类号： H01L21/31138 , B08B7/00 , B08B7/0035 , G03F7/427 , H01L28/91
摘要： In a method of removing a photoresist pattern from a substrate without deteriorating a lower electrode or increasing processing time, ozone gas may be provided onto a substrate on which a photoresist pattern may be formed. An oxidation-decomposition process may be carried out using the ozone gas, to thereby decompose the photoresist pattern on the substrate. The decomposed photoresist pattern may be dissolved into water and removed from the substrate in a rinsing process. Accordingly, a photoresist pattern in an opening having a relatively high aspect ratio may be sufficiently removed from a substrate without deteriorating the lower electrode or increasing processing time.
摘要翻译：在不损坏下电极或增加处理时间的情况下从基板上除去光致抗蚀剂图案的方法中，可以在可以形成光致抗蚀剂图案的基板上提供臭氧气体。可以使用臭氧气体进行氧化分解处理，从而分解基板上的光致抗蚀剂图案。分解的光致抗蚀剂图案可以在漂洗过程中溶解在水中并从基材中除去。因此，具有相对高的纵横比的开口中的光致抗蚀剂图案可以从基板充分地去除而不会使下电极恶化或增加处理时间。

18. 发明授权

US06838330B2 Method of forming a contact hole of a semiconductor device 有权
标题翻译：形成半导体器件的接触孔的方法
公开(公告)号：US06838330B2
公开(公告)日：2005-01-04
申请号：US10445843
申请日：2003-05-28
申请人： Bong-Ho Moon , Ju-Yun Cheol , Yong-Sun Ko , In-Seak Hwang
发明人： Bong-Ho Moon , Ju-Yun Cheol , Yong-Sun Ko , In-Seak Hwang
IPC分类号： H01L21/768 , H01L21/60 , H01L21/8238
CPC分类号： H01L21/02063 , H01L21/76897
摘要： A method of forming a contact hole of a semiconductor device that is able to prevent excessive etching of an interlayer dielectric pattern includes forming a gate pattern including a first insulation layer pattern, a conductive layer pattern, a capping insulation layer pattern, and a second insulation layer pattern on a substrate; forming a spacer using an insulating material on a sidewall of the gate pattern; forming an interlayer dielectric on the substrate on which the gate pattern and the spacer are formed; forming a contact hole and an interlayer dielectric pattern for exposing the substrate by etching the interlayer dielectric; forming a liner spacer on a sidewall of the spacer and the interlayer dielectric pattern; and cleaning the resultant structure using a cleaning solution. The cleaning solution preferably includes includes ozone water and hydrogen fluoride (HF).
摘要翻译：形成能够防止层间电介质图案的过度蚀刻的半导体器件的接触孔的方法包括形成包括第一绝缘层图案，导电层图案，封盖绝缘层图案和第二绝缘体的栅极图案层图案; 在所述栅极图案的侧壁上使用绝缘材料形成间隔物; 在其上形成有栅极图案和间隔物的基板上形成层间电介质; 形成用于通过蚀刻所述层间电介质来暴露所述衬底的接触孔和层间电介质图案; 在间隔物的侧壁和层间介质图案上形成衬垫; 并使用清洁溶液清洗所得到的结构。清洗液最好包括臭氧水和氟化氢（HF）。

19. 发明授权

US09240414B1 Semiconductor devices having self-aligned contact pads 有权
标题翻译：具有自对准接触焊盘的半导体器件
公开(公告)号：US09240414B1
公开(公告)日：2016-01-19
申请号：US14875396
申请日：2015-10-05
申请人： Young-Kuk Kim , Ki-Vin Im , Han-Jin Lim , In-Seak Hwang
发明人： Young-Kuk Kim , Ki-Vin Im , Han-Jin Lim , In-Seak Hwang
IPC分类号： H01L21/336 , H01L27/108 , H01L29/78 , H01L29/423
CPC分类号： H01L27/10823 , H01L21/823437 , H01L21/823475 , H01L27/10808 , H01L27/10855 , H01L27/10885 , H01L28/60 , H01L29/4236 , H01L29/42364 , H01L29/7827
摘要： A semiconductor device includes a substrate having a field area that defines active areas, gate trenches in the substrate and extending in a first direction, a buried gate in a respective gate trench, gate capping fences in a respective gate trench over a respective buried gate, the gate capping fences protruding from top surfaces of the active areas and extending in the first direction, bit line trenches in the gate capping fences, a respective bit line trench crossing the gate capping fences and extending in a second direction perpendicular to the first direction, an insulator structure on inner walls of a respective bit line trench, bit lines and bit line capping patterns stacked on the insulator structures in a respective bit line trench, contact pads self-aligned with the gate capping fences and on the substrate between the adjacent bit lines, and a lower electrode of a capacitor on a respective contact pad.
摘要翻译：半导体器件包括具有限定有源区域的场区域的衬底，衬底中的栅极沟槽和沿第一方向延伸的衬底，相应栅极沟槽中的掩埋栅极，在相应的掩埋栅极上的相应栅极沟槽中的栅极栅极栅极，所述栅极覆盖栅栏从所述有源区域的顶表面突出并且沿所述第一方向延伸，所述栅极覆盖栅栏中的位线沟槽跨过所述栅极覆盖栅栏并沿垂直于所述第一方向的第二方向延伸的相应位线沟槽，相应位线沟槽的内壁上的绝缘体结构，堆叠在相应位线沟槽中的绝缘体结构上的位线和位线封接图案，与栅极覆盖栅栏自对准的接触焊盘和相邻位之间的衬底上的绝缘体结构线路和相应接触焊盘上的电容器的下电极。

20. 发明授权

US08723297B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08723297B2
公开(公告)日：2014-05-13
申请号：US13177984
申请日：2011-07-07
申请人： Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
发明人： Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
IPC分类号： H01L27/115
CPC分类号： H01L27/10888 , H01L21/02057 , H01L21/02063 , H01L21/30608 , H01L21/76805 , H01L21/76814 , H01L21/76897 , H01L23/485 , H01L27/10814 , H01L27/10855 , H01L29/1037 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.
摘要翻译：在具有接触结构和衬底之间的扩大的接触面积的半导体器件中，衬底可以包括布置有导电结构的第一区域和限定第一区域的第二区域。第一区域可以包括多面多面体凹部，其中至少一个侧壁相对于基底的表面倾斜。可以在衬底上形成足够覆盖导电结构的厚度的绝缘层。绝缘层具有可与凹部连通的接触孔。基板的有源区域通过接触孔露出。导电图案位于凹槽和接触孔中。因此，即使图案线的间隙距离和线宽减小，也可以将基板的有源区域的接触电阻保持在较低的值。

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