专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080152938A1 GROUP IV NANOPARTICLES AND FILMS THEREOF 有权
标题翻译：第四组纳米颗粒及其膜
公开(公告)号：US20080152938A1
公开(公告)日：2008-06-26
申请号：US11842466
申请日：2007-08-21
申请人： Maxim Kelman , Xuegeng Li , Pingrong Yu , Karel Vanheusden , David Jurbergs
发明人： Maxim Kelman , Xuegeng Li , Pingrong Yu , Karel Vanheusden , David Jurbergs
IPC分类号： B32B15/02
CPC分类号： C01B33/021 , B22F1/0022 , B22F9/12 , B22F2999/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , Y10T428/12014 , B22F2202/13
摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.
摘要翻译：公开了一组纳米颗粒。该组纳米颗粒的每个纳米颗粒由一组以基本上球形构型排列的IV族原子组成。该组纳米颗粒的每个纳米颗粒进一步具有约1.0至约2.0的球形度; 约4nm至约100nm的直径; 并且烧结温度小于该组IV族原子的熔融温度。

12. 发明申请

US20120280183A1 CERAMIC BORON-CONTAINING DOPING PASTE AND METHODS THEREFOR 有权
标题翻译：含陶硼含量的糊剂及其方法
公开(公告)号：US20120280183A1
公开(公告)日：2012-11-08
申请号：US13099794
申请日：2011-05-03
申请人： Maxim Kelman , Elena Rogojina , Gonghou Wang
发明人： Maxim Kelman , Elena Rogojina , Gonghou Wang
IPC分类号： H01B1/08
CPC分类号： C04B35/6263 , C04B35/117 , C04B35/46 , C04B35/6264 , C04B35/6365 , C04B2235/3409 , C04B2235/3804 , C04B2235/3813 , C04B2235/3821 , C04B2235/386 , C04B2235/3891 , C04B2235/421 , H01L21/2225 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.
摘要翻译：公开了一种陶瓷含硼掺杂剂浆料。陶瓷含硼掺杂剂浆料还包括一组溶剂，一组分散在该组溶剂中的陶瓷颗粒，一组分散在该组溶剂中的硼化合物颗粒，一组溶解在该组溶剂中的粘合剂分子。其中，陶瓷含硼掺杂剂浆料的剪切稀化力定律指数n在约0.01和约1之间。

13. 发明申请

US20090263977A1 SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION 审中-公开
标题翻译：使用LEWIS ACID / LEWIS BASE相互作用的DOPED组IV表面的选择性功能化
公开(公告)号：US20090263977A1
公开(公告)日：2009-10-22
申请号：US12104028
申请日：2008-04-16
申请人： Elena V. Rogojina , Maxim Kelman , Anthony Young Kim
发明人： Elena V. Rogojina , Maxim Kelman , Anthony Young Kim
IPC分类号： H01L21/312
CPC分类号： B82Y30/00 , C01B33/02
摘要： A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents.
摘要翻译：公开了一种将封端剂选择性地附接到IV族半导体表面的方法。该方法包括提供IV族半导体表面，该IV族半导体表面包括一组共价键合的IV族半导体原子和一组表面硼原子。该方法还包括将该组硼原子暴露于一组封端剂，该组封端剂的每种封端剂具有中心原子和一组官能团，其中中心原子包括至少一对电子; 其中在所述一组表面硼原子的至少一些表面硼原子与该组封端剂的至少一些封端剂的中心原子之间形成络合物。

14. 发明授权

US08889233B1 Method for reducing stress in porous dielectric films 有权
标题翻译：减少多孔介电膜应力的方法
公开(公告)号：US08889233B1
公开(公告)日：2014-11-18
申请号：US11369311
申请日：2006-03-06
申请人： Maxim Kelman , Krishnan Shrinivasan , Feng Wang , Victor Lu , Sean Chang , Guangquan Lu
发明人： Maxim Kelman , Krishnan Shrinivasan , Feng Wang , Victor Lu , Sean Chang , Guangquan Lu
IPC分类号： C08F2/48
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多步紫外线固化方法，其中UV强度，晶片衬底温度和其它条件可以在每个步骤中独立调制。在某些实施方案中，包含结构形成剂和致孔剂的膜在第一步骤中暴露于UV辐射以便于除去致孔剂并产生多孔介电膜。在第二步中，将膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

15. 发明授权

US08858843B2 High fidelity doping paste and methods thereof 有权
标题翻译：高保真掺杂浆料及其方法
公开(公告)号：US08858843B2
公开(公告)日：2014-10-14
申请号：US12967654
申请日：2010-12-14
申请人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
发明人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
IPC分类号： H01B1/02 , H01B1/08 , H01B1/12 , H01B1/06 , H01L21/22 , H01L21/38 , H01L21/02 , H01L31/18 , H01L31/0288 , H01L31/032 , H01L31/0224
CPC分类号： H01L31/18 , H01B1/06 , H01B1/12 , H01L21/2225 , H01L31/022425 , H01L31/0288 , H01L31/0321 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
摘要翻译：公开了一种高保真掺杂剂浆料。高保真掺杂剂浆料包括溶剂，分散在溶剂中的一组非玻璃基质颗粒和掺杂剂。

16. 发明授权

US08513104B2 Methods of forming a floating junction on a solar cell with a particle masking layer 有权
标题翻译：在具有颗粒掩蔽层的太阳能电池上形成浮点的方法
公开(公告)号：US08513104B2
公开(公告)日：2013-08-20
申请号：US13172040
申请日：2011-06-29
申请人： Malcolm Abbott , Maxim Kelman , Eric Rosenfeld , Elena Rogojina , Giuseppe Scardera
发明人： Malcolm Abbott , Maxim Kelman , Eric Rosenfeld , Elena Rogojina , Giuseppe Scardera
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.
摘要翻译：公开了一种在衬底上形成浮点的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前表面和后表面。该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层，并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。该方法还包括将衬底暴露于一组第三时间的蚀刻剂，其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。

17. 发明申请

US20110053352A1 Method of forming a passivated densified nanoparticle thin film on a substrate 失效
标题翻译：在基材上形成钝化的致密纳米颗粒薄膜的方法
公开(公告)号：US20110053352A1
公开(公告)日：2011-03-03
申请号：US12926252
申请日：2010-11-04
申请人： Dmitry Poplavskyy , Maxim Kelman , Mason Terry
发明人： Dmitry Poplavskyy , Maxim Kelman , Mason Terry
IPC分类号： H01L21/20 , B82Y30/00
CPC分类号： H01L21/02601 , H01L21/02381 , H01L21/0242 , H01L21/02524 , H01L21/02576 , H01L21/02579 , H01L21/02628 , Y10S977/892
摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.
摘要翻译：公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

18. 发明申请

US20080254601A1 METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES 失效
标题翻译：用反应性气体优化薄膜形成的方法
公开(公告)号：US20080254601A1
公开(公告)日：2008-10-16
申请号：US12060528
申请日：2008-04-01
申请人： Mason Terry , Malcolm Abbott , Maxim Kelman , Andreas Meisel , Dmitry Poplavskyy , Eric Schiff
发明人： Mason Terry , Malcolm Abbott , Maxim Kelman , Andreas Meisel , Dmitry Poplavskyy , Eric Schiff
IPC分类号： H01L21/208
CPC分类号： H01L21/02667 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628
摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.
摘要翻译：公开了一种用于在腔室中制造IV族半导体薄膜的方法。该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒形成了。该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

19. 发明申请

US20080138966A1 METHOD OF FABRICATING A DENSIFIED NANOPARTICLE THIN FILM WITH A SET OF OCCLUDED PORES 审中-公开
标题翻译：用一组封闭的聚四氟乙烯薄膜制造方法
公开(公告)号：US20080138966A1
公开(公告)日：2008-06-12
申请号：US11940056
申请日：2007-11-14
申请人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
发明人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
IPC分类号： H01L21/208
CPC分类号： H01L31/1804 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02664 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.1 Torr and about 50 Torr, wherein the precursor gas substantially fills the set of pores, and wherein the densified nanoparticle film with the set of occluded pores is formed.
摘要翻译：公开了一种在腔室中制造具有一组闭塞孔的致密纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约5分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成一组细孔。该方法还包括将多孔压块加热至约300℃至约900℃之间的第二温度和约5分钟至约15分钟的第二时间段，并将前体气体流入室中在约0.1托和约50托之间的分压，其中前体气体基本上填充该组孔，并且其中形成具有该组闭塞孔的致密纳米颗粒膜。

20. 发明申请

US20080063855A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20080063855A1
公开(公告)日：2008-03-13
申请号：US11851004
申请日：2007-09-06
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B3/26 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式