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1. 发明申请

US20120052665A1 METHODS OF USING A SILICON NANOPARTICLE FLUID TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES 有权
标题翻译：使用硅纳米颗粒流体控制在一组眩光扩散型材中的方法
公开(公告)号：US20120052665A1
公开(公告)日：2012-03-01
申请号：US13238252
申请日：2011-09-21
申请人： Giuseppe Scardera , Dmitry Poplavskyy , Michael Burrows , Sunil Shah
发明人： Giuseppe Scardera , Dmitry Poplavskyy , Michael Burrows , Sunil Shah
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/068 , Y02E10/547
摘要： Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
摘要翻译：公开了形成多掺杂结的方法，其利用纳米颗粒油墨在基材的表面上形成油墨图案。从油墨图案可以形成致密的薄膜油墨图案。所公开的方法可以允许原位控制掺杂剂扩散分布。

2. 发明申请

US20110183504A1 METHODS OF FORMING A DUAL-DOPED EMITTER ON A SUBSTRATE WITH AN INLINE DIFFUSION APPARATUS 审中-公开
标题翻译：在具有在线扩散装置的基板上形成双掺杂发射体的方法
公开(公告)号：US20110183504A1
公开(公告)日：2011-07-28
申请号：US12692878
申请日：2010-01-25
申请人： Giuseppe Scardera , Malcolm Abbott , Dmitry Poplavskyy , Sunil Shah
发明人： Giuseppe Scardera , Malcolm Abbott , Dmitry Poplavskyy , Sunil Shah
IPC分类号： H01L21/225
CPC分类号： H01L21/228 , H01L31/03845
摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a substrate doped with boron atoms, the substrate comprising a front substrate surface. The method also includes depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents; and heating the substrate in a baking ambient at a baking temperature and for a baking time period wherein a densified ink layer is formed. The method further includes exposing the substrate to a phosphorous dopant source at a drive-in temperature and for a drive-in time period.
摘要翻译：公开了形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括在油墨图案的前基材表面上沉积油墨，该油墨包含一组纳米颗粒和一组溶剂; 以及在焙烤温度下烘烤环境中加热基材，并且在形成致密油墨层的烘烤时间段内进行加热。该方法还包括在驱动温度和驱动时间段内将衬底暴露于磷掺杂剂源。

3. 发明授权

US08138070B2 Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles 有权
标题翻译：使用一组硅纳米颗粒流体原位控制一组掺杂剂扩散分布的方法
公开(公告)号：US08138070B2
公开(公告)日：2012-03-20
申请号：US12626198
申请日：2009-11-25
申请人： Maxim Kelman , Michael Burrows , Dmitry Poplavskyy , Giuseppe Scardera , Daniel Kray , Elena Rogojina
发明人： Maxim Kelman , Michael Burrows , Dmitry Poplavskyy , Giuseppe Scardera , Daniel Kray , Elena Rogojina
IPC分类号： H01L21/04
CPC分类号： H01L21/2225 , H01L21/223 , H01L21/2257 , H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.
摘要翻译：公开了形成多掺杂结的方法。该方法包括提供第一基板和第二基板。该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水，第一墨水含有第一组纳米颗粒和第一组溶剂，第一组纳米颗粒含有第一浓度的第一掺杂剂。该方法还包括在第一基底和第二基底中的每一个的第二表面上沉积第二墨，第二墨含有第二组纳米颗粒和第二组溶剂，第二组纳米颗粒含有第二浓度的第二掺杂剂。该方法还包括将第一衬底和第二衬底放置在背对背配置中; 以及在第一驱动环境中将所述第一基板和所述第二基板加热到第一温度并且持续第一时间段。该方法还包括将第一衬底和第二衬底以背对背构型暴露于沉积环境中，沉积环境包含POCl 3，载体N2气体，主N 2气体和反应性O 2气体，持续第二时间段; 以及在第二驱动环境中将所述第一基板和所述第二基板加热到第三温度第三时间段。

4. 发明申请

US20110003466A1 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON 审中-公开
标题翻译：用多孔硅形成多层结的方法
公开(公告)号：US20110003466A1
公开(公告)日：2011-01-06
申请号：US12794188
申请日：2010-06-04
申请人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
发明人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模，所述掩模包括暴露的掩模区域和未暴露的掩模区域。该方法还包括将掩模暴露于蚀刻剂，其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。该方法还包括在第一温度和第一时间段内，使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源，其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域，并且其中第一薄层电阻显着小于第二片电阻。

5. 发明申请

US20110003465A1 Methods of forming a multi-doped junction with silicon-containing particles 有权
标题翻译：与含硅颗粒形成多掺杂结的方法
公开(公告)号：US20110003465A1
公开(公告)日：2011-01-06
申请号：US12656710
申请日：2010-02-12
申请人： Giuseppe Scardera , Shihai Kan , Maxim Kelman , Dmitry Poplavskyy
发明人： Giuseppe Scardera , Shihai Kan , Maxim Kelman , Dmitry Poplavskyy
IPC分类号： H01L21/223
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括以油墨图案在前基板表面上沉积油墨，该油墨包括一组含硅颗粒和一组溶剂。该方法还包括将烘烤环境中的基材加热到第一温度并在第一时间段内，以便产生致密的薄膜油墨图案。该方法还包括：在具有沉积环境的扩散炉中将衬底暴露于掺杂剂源，沉积环境包括POCl 3，载体N2气体，主N 2气体和在第二温度下的反应性O 2气体，并且第二次其中在前基板表面和致密薄膜墨图案上形成PSG层; 以及将驱动环境中的衬底加热至第三温度; 其特征在于，在被所述致密膜油墨图案覆盖的前面基板表面的下方形成有具有第一薄层电阻的第一扩散区域，在未被所述致密化薄膜墨水图案覆盖的所述前面基板表面的下方形成具有第二薄层电阻的第二扩散区域，并且其中所述第一薄层电阻基本上小于所述第二薄层电阻。

6. 发明授权

US08858843B2 High fidelity doping paste and methods thereof 有权
标题翻译：高保真掺杂浆料及其方法
公开(公告)号：US08858843B2
公开(公告)日：2014-10-14
申请号：US12967654
申请日：2010-12-14
申请人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
发明人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
IPC分类号： H01B1/02 , H01B1/08 , H01B1/12 , H01B1/06 , H01L21/22 , H01L21/38 , H01L21/02 , H01L31/18 , H01L31/0288 , H01L31/032 , H01L31/0224
CPC分类号： H01L31/18 , H01B1/06 , H01B1/12 , H01L21/2225 , H01L31/022425 , H01L31/0288 , H01L31/0321 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
摘要翻译：公开了一种高保真掺杂剂浆料。高保真掺杂剂浆料包括溶剂，分散在溶剂中的一组非玻璃基质颗粒和掺杂剂。

7. 发明授权

US08513104B2 Methods of forming a floating junction on a solar cell with a particle masking layer 有权
标题翻译：在具有颗粒掩蔽层的太阳能电池上形成浮点的方法
公开(公告)号：US08513104B2
公开(公告)日：2013-08-20
申请号：US13172040
申请日：2011-06-29
申请人： Malcolm Abbott , Maxim Kelman , Eric Rosenfeld , Elena Rogojina , Giuseppe Scardera
发明人： Malcolm Abbott , Maxim Kelman , Eric Rosenfeld , Elena Rogojina , Giuseppe Scardera
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.
摘要翻译：公开了一种在衬底上形成浮点的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前表面和后表面。该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层，并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。该方法还包括将衬底暴露于一组第三时间的蚀刻剂，其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。

8. 发明申请

US20140065764A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH A LOCALLY DIFFUSED REAR SIDE 有权
标题翻译：具有局部扩散后壁的光伏电池的制造方法
公开(公告)号：US20140065764A1
公开(公告)日：2014-03-06
申请号：US13602919
申请日：2012-09-04
申请人： Giuseppe Scardera , Maxim Kelman , Elena V. Rogojina , Dmitry Poplavskyy , Elizabeth Tai , Gonghou Wang
发明人： Giuseppe Scardera , Maxim Kelman , Elena V. Rogojina , Dmitry Poplavskyy , Elizabeth Tai , Gonghou Wang
IPC分类号： H01L31/18
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
摘要翻译：一种用于制造具有局部扩散的后侧的光伏电池的方法，包括以下步骤：（a）提供掺杂的硅衬底，所述衬底包括前面朝上的朝向的表面和后表面; （b）在前表面和后表面上形成二氧化硅层; （c）以图案形式在后表面上沉积含硼掺杂浆料，所述含硼浆料包含硼化合物和溶剂; （d）以图案形式在后表面上沉积含磷掺杂浆料，所述含磷掺杂浆料包含磷化合物和溶剂; （e）将环境中的硅衬底加热到第一温度并且持续第一时间段，以便将硼和磷局部地扩散到硅衬底的后表面中。

9. 发明授权

US08394658B2 Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles 有权
标题翻译：使用硅纳米颗粒流体原位控制一组掺杂剂扩散分布的方法
公开(公告)号：US08394658B2
公开(公告)日：2013-03-12
申请号：US13238252
申请日：2011-09-21
申请人： Giuseppe Scardera , Dmitry Poplavskyy , Michael Burrows , Sunil Shah
发明人： Giuseppe Scardera , Dmitry Poplavskyy , Michael Burrows , Sunil Shah
IPC分类号： H01L21/22 , H01L20/22
CPC分类号： H01L21/2255 , H01L31/068 , Y02E10/547
摘要： Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
摘要翻译：公开了形成多掺杂结的方法，其利用纳米颗粒油墨在基材的表面上形成油墨图案。从油墨图案可以形成致密的薄膜油墨图案。所公开的方法可以允许原位控制掺杂剂扩散分布。

10. 发明申请

US20120145967A1 HIGH FIDELITY DOPING PASTE AND METHODS THEREOF 有权
标题翻译：高密度喷浆及其方法
公开(公告)号：US20120145967A1
公开(公告)日：2012-06-14
申请号：US12967654
申请日：2010-12-14
申请人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
发明人： Elena Rogojina , Maxim Kelman , Giuseppe Scardera
IPC分类号： H01B1/24
CPC分类号： H01L31/18 , H01B1/06 , H01B1/12 , H01L21/2225 , H01L31/022425 , H01L31/0288 , H01L31/0321 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
摘要翻译：公开了一种高保真掺杂剂浆料。高保真掺杂剂浆料包括溶剂，分散在溶剂中的一组非玻璃基质颗粒和掺杂剂。

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