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11. 发明授权

US06207788B1 Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效
标题翻译：酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物
公开(公告)号：US06207788B1
公开(公告)日：2001-03-27
申请号：US09122177
申请日：1998-07-24
申请人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho—ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译：酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且其他两个氢原子通过亚甲基键键合。邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。

12. 发明授权

US6127087A Positive photoresist compositions and multilayer resist materials using same 失效
标题翻译：正光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US6127087A
公开(公告)日：2000-10-03
申请号：US98459
申请日：1998-06-17
申请人： Miki Kobayashi , Kousuke Doi , Sachiko Tamura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Miki Kobayashi , Kousuke Doi , Sachiko Tamura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprises (A) an alkali-soluble resin, and (B) at least one quinonediazide group-containing compound in which part or all of the hydroxyl groups of a compound represented by the following formula (I) are esterified with a quinonediazidesulfonic acid: ##STR1## wherein each of R.sup.1 and R.sup.2 is an alkyl group having 1 to 5 carbon atoms, and "a" is 0 or 1. The present invention provides a positive photoresist composition which can form a resist pattern having high film residual rate, improved development contrast between exposed portions and unexposed portions, and satisfactory definition, exposure margin, focal depth range properties and sectional shape.
摘要翻译：正型光致抗蚀剂组合物包含（A）碱溶性树脂和（B）至少一种含醌二叠氮化物基团的化合物，其中由下式（I）表示的化合物的部分或全部羟基被酯化醌二叠氮化物：其中R 1和R 2各自为具有1至5个碳原子的烷基，“a”为0或1.本发明提供一种正型光致抗蚀剂组合物，其可以形成具有高膜残留率的抗蚀剂图案，暴露部分和未曝光部分之间的对比度，以及令人满意的清晰度，曝光余量，焦点深度范围属性和截面形状。

13. 发明授权

US5702862A Positive photoresist coating solution comprising a mixed solvent of propylene glycol monopropyl ether and 2-heptanone 失效
标题翻译：包含丙二醇单丙基醚和2-庚酮的混合溶剂的正性光致抗蚀剂涂料溶液
公开(公告)号：US5702862A
公开(公告)日：1997-12-30
申请号：US797663
申请日：1997-01-31
申请人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C09D5/00 , C09D11/00 , C09D161/02 , C09D161/04 , G03F7/004 , G03F7/022 , G03F7/20 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/022
摘要： A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.
摘要翻译：一种正型光致抗蚀剂涂料溶液，其包含（a）碱溶性树脂，（b）含醌二叠氮化物基团的化合物和（c）足以溶解所述（a）和（b）组分的量的有机溶剂，其中所述有机溶剂含有（i）丙二醇单丙醚和（ii）2-庚酮。本发明的溶液表现出优异的涂布能力，灵敏度，热稳定性，焦深范围，形状分布能力等。

14. 发明授权

US5478692A Positive-working naphthoquinone diazide sulfonic acid ester photoresist composition containing 4,4'-bis(dialkylamino)benzophenone 失效
标题翻译：含有4,4'-双（二烷基氨基）二苯甲酮的正性萘醌二叠氮磺酸酯光致抗蚀剂组合物
公开(公告)号：US5478692A
公开(公告)日：1995-12-26
申请号：US350128
申请日：1994-11-29
申请人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Taku Nakao , Remi Numata , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/031 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： Proposed is a novel positive-working photoresist composition suitable for use in the fine patterning works in the manufacture of electronic devices and capable of exhibiting excellent performance with high resolution, high sensitivity, wide range of focusing depth, large exposure dose latitude and other characteristics. The photoresist composition is formulated, in addition to the basic ingredients of an alkali-soluble novolac resin as a film-forming agent and photosensitive ingredient such as an ester of naphthoquinone-1,2-diazide sulfonic acid and a polyhydroxy compound, with a limited amount of 4,4'-bis(dialkylamino) benzophenone, e.g., 4,4'-bis(diethylamino) benzophenone, preferably, in combination with a polyhydroxy compound such as 4,6-bis[1-methyl-1-(4-hydroxyphenyl)ethyl]-1,3-dihydroxy phenol.
摘要翻译：提出了一种新型正性光致抗蚀剂组合物，适用于电子器件制造中的精细图案化工作，能够以高分辨率，高灵敏度，宽范围的聚焦深度，较大的曝光剂量纬度等特性表现出优异的性能。光致抗蚀剂组合物除了作为成膜剂的碱溶性酚醛清漆树脂的基本成分和萘醌-1,2-二叠氮磺酸和多羟基化合物的酯等感光成分以外，配合有限制 4,4'-双（二烷基氨基）二苯甲酮的量，例如4,4'-双（二乙基氨基）二苯甲酮，优选与多羟基化合物如4,6-双[1-甲基-1-（4 - 羟基苯基）乙基] -1,3-二羟基苯酚。

15. 发明授权

US4985333A Positive-working photosensitive composition with three difference 1,2-naphthoquinone diazide sulfonic acid esters to include the ester of curcumin 失效
标题翻译：具有三个不同的1,2-萘醌二叠氮磺酸酯的正性感光组合物，包括姜黄素的酯
公开(公告)号：US4985333A
公开(公告)日：1991-01-15
申请号：US385820
申请日：1989-07-27
申请人： Nobuo Tokutake , Koichi Takahashi , Yoshiyuki Satoh , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Nobuo Tokutake , Koichi Takahashi , Yoshiyuki Satoh , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08L61/08 , G03F7/022
CPC分类号： G03F7/022
摘要： The positive-working photosensitive composition useful as a material of photoresist comprises, in addition to a film-forming resin, such as a cresol novolak resin, and a photosensitive compound, such as an ester of a polyhydroxy benzophenone and 1,2-naphthoquinonediazido-5-sulfonic acid, an esterification product of curcumin with 1,2-naphthoquinone diazide sulfonic acid in a limited amount. The photosensitive composition is outstandingly insusceptible to the adverse influence of halation even when the photoresist layer is formed on a highly reflective aluminum-deposited surface of a substrate without decreasing the photosensitivity of the composition to actinic rays in the photolithographic process for the manufacture of semiconductor devices.
摘要翻译：可用作光致抗蚀剂材料的正性感光性组合物除了成膜树脂以外，例如甲酚酚醛清漆树脂和光敏化合物，例如多羟基二苯甲酮的酯和1,2-萘醌二叠氮基 - 5-磺酸，姜黄素与1,2-萘醌二叠氮磺酸的酯化产物有限。即使当光致抗蚀剂层形成在基板的高反射性铝沉积表面上时，光敏组合物对于不利影响也是显着的，而不会在用于制造半导体器件的光刻工艺中降低组合物对光化射线的光敏性。

16. 发明授权

US4983020A Dyeing resistant insulation film of high quality for a color filter for use in a solid-state image pickup element 失效
标题翻译：用于固态摄像元件的彩色滤光片的高品质耐污染绝缘膜
公开(公告)号：US4983020A
公开(公告)日：1991-01-08
申请号：US338523
申请日：1989-04-14
申请人： Toshimasa Nakayama , Hidekatsu Kohara , Naoki Aoyanagi , Daisuke Hayashi
发明人： Toshimasa Nakayama , Hidekatsu Kohara , Naoki Aoyanagi , Daisuke Hayashi
IPC分类号： G02B5/20 , C08F20/32 , C08F220/10 , C08F220/14 , C08F220/32 , C09D5/25 , C09D133/12 , C09D133/14 , G02B5/22
CPC分类号： C09D133/14 , C09D133/12
摘要： A dyeing resistant insulation film for forming a color filter which exhibits no scattering between the dyed layer and the light detection portion and having high bondability with the dyed layer can be provided by utilizing a copolymer of glycidyl methacrylate and methyl methacrylate. A color filter of extremely high quality can be prepared by using this dyeing resistant insulation film for forming the color filter.
摘要翻译：通过利用甲基丙烯酸缩水甘油酯和甲基丙烯酸甲酯的共聚物，可以提供用于形成不会在染色层和光检测部分之间散射并且与染色层具有高粘合性的滤色器的耐染色绝缘膜。可以通过使用该耐染色绝缘膜形成滤色器来制备极高质量的滤色片。

17. 发明授权

US4873177A Method for forming a resist pattern on a substrate surface and a scum-remover therefor 失效
标题翻译：在基板表面上形成抗蚀剂图案的方法和用于其的浮渣除去器
公开(公告)号：US4873177A
公开(公告)日：1989-10-10
申请号：US229762
申请日：1988-08-05
申请人： Hatsuyuki Tanaka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The pattern-wise photoresist layer formed on the surface of a substrate according to the inventive method is imparted with a greatly improved resolving power as a result of complete removal of the scum residua left after the development treatment. Namely, the positive-working photoresist layer formed on the substrate surface is exposed pattern-wise to actinic rays, developed with a developer solution which is typically a 2-7% aqueous solution of a quaternary ammonium hydroxide and then rinsed with a scum-remover solution which is a mixture of 100 parts of a 0.1-1.5% aqueous solution of a quaternary ammonium hydroxide and 1-30 parts of a water-miscible organic solvent and capable of dissolving away the scum residua in the pattern-wise photoresist layer without affecting the quality of the photoresist pattern reproduction.
摘要翻译：根据本发明方法形成在基材表面上的图案光致抗蚀剂层由于在显影处理后完全除去剩余的浮渣残留物而赋予极大改进的分辨能力。也就是说，形成在基板表面上的正性光致抗蚀剂层以图案方式暴露于光化学射线，用显影剂溶液显影，显影剂溶液通常为2-7％氢氧化季铵水溶液，然后用浮渣除去剂溶液，其为100份0.1-1.5％的季铵氢氧化物水溶液和1-30份水混溶性有机溶剂的混合物，并且能够将浮渣残留物溶解在图案化光致抗蚀剂层中而不影响光刻胶图案再现的质量。

18. 发明授权

US06492085B1 Positive photoresist composition and process and synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和工艺合成多酚化合物
公开(公告)号：US06492085B1
公开(公告)日：2002-12-10
申请号：US09635404
申请日：2000-08-10
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

19. 发明授权

US06406827B2 Positive photoresist composition and process for forming resist pattern 失效
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06406827B2
公开(公告)日：2002-06-18
申请号：US09322023
申请日：1999-05-28
申请人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/023 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱溶性树脂，（B）例如双[2,5-二甲基-3-（2-羟基-5-甲基苄基）-4-羟基苯基]甲烷的醌二叠氮化物酯和 /或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（C）4,4'-双（二乙基氨基）二苯甲酮。该组合物具有高灵敏度和清晰度，并且改善了焦深范围特性和曝光不足。

20. 发明授权

US06177226B1 Positive photoresist composition and process for forming contact hole 失效
标题翻译：正光致抗蚀剂组合物和形成接触孔的方法
公开(公告)号：US06177226B1
公开(公告)日：2001-01-23
申请号：US09069074
申请日：1998-04-29
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译：一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链位于其他亚甲基链的间位，并且提供每个苯环具有羟基。根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像方法。

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