专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20060100735A1 Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
标题翻译：用于确定快速加热单元中的半导体晶片的温度的方法
公开(公告)号：US20060100735A1
公开(公告)日：2006-05-11
申请号：US10540613
申请日：2003-11-28
申请人： Markus Hauf , Christoph Merkl , Christoph Striebel
发明人： Markus Hauf , Christoph Merkl , Christoph Striebel
IPC分类号： G06F19/00 , H01L21/00 , H01L21/66
CPC分类号： H01L21/324 , G01J5/0003 , H01L21/67115 , H01L21/67248
摘要： The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.
摘要翻译：本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值，其与待确定的状态变量有关，以及通过模型 - 预测值预测的测量值，由此测量值和预测值分别包括常数和可变部分的分量，并且由此分别至少建立可变部分，由滤波器分隔开，以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异，通过再循环模型中的第一差异来至少一个模型参数的参数自适应，目的是将模型行为适应于可变系统参数，与测量值和预测值形成第二个差异通过可变部分调整的测量值和经调整的预测值，通过模型中的第二差异的再循环对模型系统的状态进行状态校正，目的是使模型系统的状态与实际系统和模型上至少一个状态变量的测量。

12. 发明申请

US20060040478A1 Method of producing a calibration wafer 有权
标题翻译：校准晶圆的制造方法
公开(公告)号：US20060040478A1
公开(公告)日：2006-02-23
申请号：US10536788
申请日：2003-11-13
申请人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
发明人： Christoph Merkl , Markus Hauf , Rolf Bremensdorfer
IPC分类号： H01L21/04
CPC分类号： G01N21/278 , H01L21/67115 , H01L22/34
摘要： A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.
摘要翻译：一种制造具有至少预定发射率的校准晶片的方法，包括提供半导体材料晶片; 使晶片的体材料掺杂异质原子和/或产生晶格缺陷以获得预定的发射率; 并涂覆晶片以获得另外的光学特性。

13. 发明授权

US08710471B2 Projection illumination system for EUV microlithography 有权
标题翻译：用于EUV微光刻的投影照明系统
公开(公告)号：US08710471B2
公开(公告)日：2014-04-29
申请号：US12887139
申请日：2010-09-21
申请人： Udo Dinger , Markus Hauf
发明人： Udo Dinger , Markus Hauf
IPC分类号： H01L21/26 , H05G2/00
CPC分类号： G03F7/702 , G03F7/70008 , G03F7/70058 , G03F7/70108
摘要： A projection illumination installation for EUV microlithography includes an EUV synchrotron light source for producing EUV used light. An object field is illuminated with the used light using illumination optics. The object field is mapped into an image field using projection optics. A scanning device is used to illuminate the object field by deflecting the used light in sync with a projection illumination period. The result is a projection illumination installation in which the output power from an EUV synchrotron light source can be used as efficiently as possible for EUV projection illumination.
摘要翻译：用于EUV微光刻的投影照明装置包括用于产生EUV使用光的EUV同步加速器光源。使用照明光学器件的被使用的光照亮物体场。使用投影光学将物体场映射到图像场中。扫描装置用于通过与投影照明周期同步地偏转所使用的光来照亮对象场。结果是投影照明设备，其中EUV同步加速器光源的输出功率可以尽可能高效地用于EUV投影照明。

14. 发明授权

US08508854B2 Optical element and method 有权
标题翻译：光学元件及方法
公开(公告)号：US08508854B2
公开(公告)日：2013-08-13
申请号：US12966552
申请日：2010-12-13
申请人： Eric Eva , Payam Tayebati , Michael Thier , Markus Hauf , Ulrich Schoenhoff , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner
发明人： Eric Eva , Payam Tayebati , Michael Thier , Markus Hauf , Ulrich Schoenhoff , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner
IPC分类号： G02B9/00
CPC分类号： G03F7/70891 , G02B7/028 , G02B27/0068 , G03F7/70266
摘要： The disclosure relates to an optical element configure to at least partial spatially resolve correction of a wavefront aberration of an optical system (e.g., a projection exposure apparatus for microlithography) to which optical radiation can be applied, as well as related systems and methods.
摘要翻译：本公开涉及一种光学元件，其被配置为至少部分空间地解决可以应用光辐射的光学系统（例如，用于微光刻的投影曝光设备）的波前像差的校正，以及相关的系统和方法。

15. 发明授权

US08328374B2 Device for controlling temperature of an optical element 有权
标题翻译：用于控制光学元件的温度的装置
公开(公告)号：US08328374B2
公开(公告)日：2012-12-11
申请号：US13268303
申请日：2011-10-07
申请人： Markus Hauf
发明人： Markus Hauf
IPC分类号： G02B5/08
CPC分类号： G03F7/70891 , G02B5/08 , G02B5/0891 , G02B7/008 , G02B7/1815 , G03B27/26 , G03F7/70008 , G03F7/70825 , G05D23/1919 , G21K1/067 , H01L2924/0002 , H01L2924/00
摘要： A device serves for controlling temperature of an optical element provided in vacuum atmosphere. The device has a cooling apparatus having a radiational cooling part, arranged apart from the optical element, for cooling the optical element by radiation heat transfer. A controller serves for controlling temperature of the radiational cooling part. Further, the device comprises a heating part for heating the optical element. The heating part is connected to the controller for controlling the temperature of the heating part. The resulting device for controlling temperature in particular can be used with an optical element in a EUV microlithography tool leading to a stable performance of its optics.
摘要翻译：该装置用于控制在真空气氛中提供的光学元件的温度。该装置具有冷却装置，该冷却装置具有与该光学元件隔开的辐射冷却部，用于通过辐射热传递来冷却该光学元件。控制器用于控制辐射冷却部件的温度。此外，该装置包括用于加热光学元件的加热部件。加热部连接到控制器，用于控制加热部件的温度。用于特别控制温度的所得装置可以与EUV微光刻工具中的光学元件一起使用，导致其光学器件的稳定性能。

16. 发明申请

US20110063598A1 ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
标题翻译： EUV微观照相和相关系统和装置的照明光学
公开(公告)号：US20110063598A1
公开(公告)日：2011-03-17
申请号：US12915785
申请日：2010-10-29
申请人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
发明人： Damian Fiolka , Berndt Warm , Christian Steigerwald , Martin Endres , Ralf Stuetzle , Jens Ossmann , Ralf Scharnweber , Markus Hauf , Udo Dinger , Severin Waldis , Marc Kirch , Joachim Hartjes
IPC分类号： G03B27/72
CPC分类号： G03F7/70191 , G03F7/70083
摘要： An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
摘要翻译：用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场，其具有在较大场尺寸和较短场尺寸之间的延伸比，其中该比率远大于1.场分面镜具有多个的场面在场景中设置定义的照明条件。在场面反射镜下游的以下光学器件将照明光透射到物体场中。以下光学器件包括具有多个光瞳面的光瞳小面镜。场分面在每种情况下分别被分配给光瞳面，使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。场面镜不仅包括多个基本照明场面，它们通过相关联的基本照明光瞳面提供物场的基本照明，而且还包括多个校正照明场面，其提供对照射的照明的校正通过相关联的校正照明光瞳面进行物体场。结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化，例如照明强度分布或照明角度分布。

17. 发明申请

US20110014799A1 PROJECTION ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY 有权
标题翻译：用于EUV微观计算的投影照明系统
公开(公告)号：US20110014799A1
公开(公告)日：2011-01-20
申请号：US12887139
申请日：2010-09-21
申请人： Udo Dinger , Markus Hauf
发明人： Udo Dinger , Markus Hauf
IPC分类号： H01L21/26 , H05G2/00
CPC分类号： G03F7/702 , G03F7/70008 , G03F7/70058 , G03F7/70108
摘要： A projection illumination installation for EUV microlithography includes an EUV synchrotron light source for producing EUV used light. An object field is illuminated with the used light using illumination optics. The object field is mapped into an image field using projection optics. A scanning device is used to illuminate the object field by deflecting the used light in sync with a projection illumination period. The result is a projection illumination installation in which the output power from an EUV synchrotron light source can be used as efficiently as possible for EUV projection illumination.
摘要翻译：用于EUV微光刻的投影照明装置包括用于产生EUV使用光的EUV同步加速器光源。使用照明光学器件的被使用的光照亮物体场。使用投影光学将物体场映射到图像场中。扫描装置用于通过与投影照明周期同步地偏转所使用的光来照亮对象场。结果是投影照明设备，其中EUV同步加速器光源的输出功率可以尽可能高效地用于EUV投影照明。

18. 发明申请

US20100201958A1 OPTICAL CORRECTION DEVICE 有权
标题翻译：光学校正装置
公开(公告)号：US20100201958A1
公开(公告)日：2010-08-12
申请号：US12700122
申请日：2010-02-04
申请人： Markus Hauf , Ulrich Schoenhoff , Payam Tayebati , Michael Thier , Tilmann Heil , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner , Aksel Goehnermeier , Dirk Hellweg
发明人： Markus Hauf , Ulrich Schoenhoff , Payam Tayebati , Michael Thier , Tilmann Heil , Ole Fluegge , Arif Kazi , Alexander Sauerhoefer , Gerhard Focht , Jochen Weber , Toralf Gruner , Aksel Goehnermeier , Dirk Hellweg
IPC分类号： G03B27/52 , G02B7/02
CPC分类号： G02B7/008 , G02B7/1815 , G02B26/06 , G02B27/0025 , G03F7/70191 , G03F7/70308 , G03F7/70825 , G03F7/70891
摘要： The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.
摘要翻译：本发明涉及具有用于影响光学校正装置中的温度分布的热致动器的光学校正装置。光学校正装置由至少两个部分元件构成，这些部分元素关于其传送热量的能力而不同。此外，本公开涉及影响光学元件中的温度分布的方法。

19. 发明授权

US07412299B2 Process for determining the temperature of a semiconductor wafer in a rapid heating unit 有权
标题翻译：用于确定快速加热单元中的半导体晶片的温度的方法
公开(公告)号：US07412299B2
公开(公告)日：2008-08-12
申请号：US10540613
申请日：2003-11-28
申请人： Markus Hauf , Christoph Merkl , Christoph Striebel
发明人： Markus Hauf , Christoph Merkl , Christoph Striebel
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： H01L21/324 , G01J5/0003 , H01L21/67115 , H01L21/67248
摘要： The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value adjusted by the changeable portion and the adjusted forecast value, state correction of a state of the model system by recirculation of the second difference in the model, with the aim of bringing the state of the model system into correspondence with that of the real system, and measurement of the at least one state variable on the model.
摘要翻译：本发明涉及一种用于通过在RTP系统上测量的至少一个测量信号从RTP系统的模型确定至少一个状态变量的过程 - 测量值，其与待确定的状态变量有关，以及通过模型 - 预测值预测的测量值，由此测量值和预测值分别包括常数和可变部分的分量，并且由此分别至少建立可变部分，由滤波器分隔开，以便在模型的可变部分和通过模型预测的测量值的可变部分之间形成第一差异，通过再循环模型中的第一差异来至少一个模型参数的参数自适应，目的是将模型行为适应于可变系统参数，与测量值和预测值形成第二个差异通过可变部分调整的测量值和经调整的预测值，通过模型中的第二差异的再循环对模型系统的状态进行状态校正，目的是使模型系统的状态与实际系统和模型上至少一个状态变量的测量。

20. 发明申请

US20060291834A1 Method and apparatus for thermally treating substrates 有权
标题翻译：用于热处理基板的方法和装置
公开(公告)号：US20060291834A1
公开(公告)日：2006-12-28
申请号：US11446675
申请日：2006-06-05
申请人： Markus Hauf , Christoph Striebel
发明人： Markus Hauf , Christoph Striebel
IPC分类号： F26B19/00
CPC分类号： H01L21/67248 , C23C16/481 , C30B31/12 , C30B33/02 , H01L21/67115 , H01L21/67242 , H05B3/0047 , Y10T29/41
摘要： The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.
摘要翻译：本公开的目的是以简单和经济的方式使用高温计测量温度，使得即使对于低温也能进行精确的温度测量。本公开提供了一种用于热处理基底的装置和方法，其中所述基底暴露于至少第一和至少第二辐射; 第一辐射的预定波长在第一辐射源和衬底之间被吸收; 使用布置在与第二辐射源相同侧的辐射检测器以预定波长测量来自衬底的辐射; 调制并确定来自第二辐射源的第二辐射。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式