专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20100117204A1 FILM FORMING METHOD FOR A SEMICONDUCTOR 有权
标题翻译：一种半导体薄膜成型方法
公开(公告)号：US20100117204A1
公开(公告)日：2010-05-13
申请号：US12452784
申请日：2008-07-24
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L21/31
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.
摘要翻译：本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

12. 发明申请

US20090029066A1 Film forming method for a semiconductor 有权
标题翻译：半导体成膜方法
公开(公告)号：US20090029066A1
公开(公告)日：2009-01-29
申请号：US12008770
申请日：2008-01-14
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H05H1/24
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要翻译：本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

13. 发明授权

US08435882B2 Film forming method for a semiconductor 有权
标题翻译：半导体成膜方法
公开(公告)号：US08435882B2
公开(公告)日：2013-05-07
申请号：US12452784
申请日：2008-07-24
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L21/4763
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.
摘要翻译：本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

14. 发明授权

US07923819B2 Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same 有权
标题翻译：层间绝缘膜，布线结构和电子器件及其制造方法
公开(公告)号：US07923819B2
公开(公告)日：2011-04-12
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/58
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

15. 发明申请

US20070243377A1 Modacrylic Shrinkable Fiber and Method for Manufacturing The Same 有权
标题翻译：改性聚丙烯酸收缩纤维及其制造方法
公开(公告)号：US20070243377A1
公开(公告)日：2007-10-18
申请号：US11632604
申请日：2005-07-08
申请人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
发明人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
IPC分类号： D02G3/00 , D02G3/02
CPC分类号： D01F6/54 , C08F220/14 , C08F220/44 , C08F220/58 , C08F228/02 , D01F6/48 , Y10T428/2913 , Y10T428/2929 , Y10T428/2931 , Y10T442/64
摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要翻译：根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量）为100重量份。这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

16. 发明申请

US20070077737A1 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20070077737A1
公开(公告)日：2007-04-05
申请号：US10580036
申请日：2004-11-19
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H01L21/26 , H01L21/42 , H05H1/24
CPC分类号： C23C16/511 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/3244
摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译：通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而在半导体晶片（W）上形成一定厚度的含氟碳膜。每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟形成在成膜工艺中形成的碳膜。

17. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

18. 发明申请

US20050002590A1 Information processing system, apparatus and method, storage medium storing a program, which implements the method, in form readable by the information processing apparatus, and the program 有权
标题翻译：信息处理系统，装置和方法，存储执行该方法的程序的存储介质，以信息处理装置可读的形式，以及程序
公开(公告)号：US20050002590A1
公开(公告)日：2005-01-06
申请号：US10836217
申请日：2004-05-03
申请人： Kohei Kawamura
发明人： Kohei Kawamura
IPC分类号： G06T11/60 , G06F3/12 , G06T3/00 , G06T3/40 , G06T3/60 , G06T5/50 , H04N1/00 , H04N1/32 , H04N1/387 , H04N1/393 , H04N5/76 , H04N5/91 , H04N7/173 , H04N21/2668 , H04N21/274 , G06K9/00
CPC分类号： H04N1/32 , H04N1/00127 , H04N1/00132
摘要： An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.
摘要翻译：一种用于向通信终端提供服务的信息处理方法。从通信终端接收到要对其应用服务的多个保持数据的块中的编辑时，从保持的数据中自动选择能够接受接受的编辑的数据，并编辑所选择的数据。关于自动判断为不能进行接受编辑的数据，报告将该数据排除在编辑之外的信息被发送到通信终端并被显示。也就是说，当多个保持数据项被同时编辑时，自动排除不适合于该编辑的数据，从而提高用户操作方便性。此外，清楚地向用户指示不适合于编辑的数据的事实，以防止用户的错误识别。

19. 发明授权

US08017197B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08017197B2
公开(公告)日：2011-09-13
申请号：US10580036
申请日：2004-11-19
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H05H1/24 , C23C14/02 , C23C16/00 , C23F1/00
CPC分类号： C23C16/511 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/3244
摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译：通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。由此，将从气体供给部件（3）供给到处理室（1）的C5F8气体变更（激活）为等离子体，以在半导体晶片（W）上形成一定厚度的含氟碳膜）。每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。在预涂工序中，将C5F8气体变成等离子体，形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。

20. 发明授权

US07776736B2 Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same 有权
标题翻译：能够抑制在绝缘膜表面暴露的氟原子与水反应的电子器件用基板，及其加工方法
公开(公告)号：US07776736B2
公开(公告)日：2010-08-17
申请号：US11596186
申请日：2005-05-10
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H01L29/40 , H01L21/4763
CPC分类号： H01L21/76801 , C23C16/30 , C23C16/45565 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/312 , H01L21/3127 , H01L21/3146 , H01L21/76825 , H01L21/76826
摘要： Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.
摘要翻译：公开了半导体装置等的电子设备用基板及其加工方法。在该处理方法中，首先准备电子器件用基板，在其上形成由碳氟化合物（CF）构成的绝缘膜（I）基板的表面。然后，通过用例如以氪（Kr）气体制成的活性物质（KR +）轰击绝缘膜（I）的表面，除去暴露在绝缘膜（I）的表面中的氟（F）原子等离子体。在这方面，至少从绝缘膜形成步骤直到完成除氟步骤之后，基板与水分保持脱离接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式