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11. 发明申请

US20100009096A1 VACUUM PROCESSING APPARATUS AND DEPOSITION METHOD USING THE VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工装置和使用真空加工装置的沉积方法
公开(公告)号：US20100009096A1
公开(公告)日：2010-01-14
申请号：US12309634
申请日：2008-02-18
申请人： Keisuke Kawamura , Hiroshi Mashima
发明人： Keisuke Kawamura , Hiroshi Mashima
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32091 , H01J37/32183 , H01L21/02532 , H01L21/0262
摘要： A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (3a to 3h) that are supplied with high-frequency power from a power supply unit (17a) through both ends (53) thereof, and form plasma with respect to a substrate (8) respectively, and a plurality of matching boxes (3a to 3ht) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (3a to 3h) at the ends (53) respectively; wherein impedance of the plurality of matching boxes (3a to 3ht) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit (17a) from one discharge electrode among the plurality of discharge electrodes (3a to 3h).
摘要翻译：提供了一种真空处理装置，其中容易调节沉积特性，并且可以抑制沉积室之间的沉积特性的差异的发生，并且可以实现设备成本的降低，并且提供使用真空处理装置的沉积方法。该真空处理装置的特征在于具有从供电单元（17a）经过其两端（53）供给高频电力的多个放电电极（3a〜3h），并相对于基板形成等离子体（8），以及多个匹配箱（3a〜3ht），分别调整在端部（53）处提供给多个放电电极（3a〜3h）的高频电力的相位和幅度; 其特征在于，所述多个匹配箱（3a〜3ht）的阻抗被设定为大致相同的值，所述阻抗值为反射功率近似最小的值，所述反射功率从所述反馈功率返回到所述电源单元多个放电电极（3a〜3h）中的一个放电电极。

12. 发明申请

US20110073185A1 PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光伏器件及制造光伏器件的方法
公开(公告)号：US20110073185A1
公开(公告)日：2011-03-31
申请号：US12995029
申请日：2008-10-30
申请人： Tatsuyuki Nishimiya , Hiroshi Mashima , Hiroomi Miyahara , Keisuke Kawamura , Youji Nakano
发明人： Tatsuyuki Nishimiya , Hiroshi Mashima , Hiroomi Miyahara , Keisuke Kawamura , Youji Nakano
IPC分类号： H01L31/036 , H01L21/66
CPC分类号： H01L31/075 , C23C16/24 , C23C16/509 , H01L31/028 , H01L31/03685 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m2, wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%. In this manner, by adjusting the crystallinity of the crystalline silicon i layer to a crystallinity that yields a high output but is prior to the occurrence of high-brightness reflective regions, thereby restricting the surface area proportion of the high-brightness reflective regions, a photovoltaic device that exhibits a high output can be realized.
摘要翻译：一种光电转换装置（100），其具有形成在不小于1m 2的大表面积基板（1）上的晶体硅i层（42）的光电转换装置（3），其中所述晶体硅i层包括区域其中，相对于非晶硅相的拉曼峰强度，晶体硅相的拉曼峰强度的基板（1）面内的拉曼峰值比例在不小于等于的范围内 3.5以上8.0以下，拉曼峰比不大于2.5的基板（1）面内的那些区域的表面积比不大于3％。以这种方式，通过将晶体硅i层的结晶度调节到产生高输出但在出现高亮度反射区域之前的结晶度，从而限制高亮度反射区域的表面积比例，能够实现高输出的光电转换装置。

13. 发明申请

US20090159432A1 Thin-film deposition apparatus using discharge electrode and solar cell fabrication method 审中-公开
标题翻译：使用放电电极和太阳能电池制造方法的薄膜沉积装置
公开(公告)号：US20090159432A1
公开(公告)日：2009-06-25
申请号：US12227970
申请日：2007-08-22
申请人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
发明人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
IPC分类号： C23C14/34
CPC分类号： C23C16/509 , C23C16/45563 , C23C16/4557 , C23C16/46 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/18 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 20 that are substantially parallel to each other and extend in an X direction; and a plurality of longitudinal structures 21a that are provided between the two lateral structures, are substantially parallel to each other, and extend in a Y direction substantially orthogonal to the X direction. The longitudinal structures 21a each include an electrode main body 35 whose one end 35a is connected to one of the lateral structures 20 and whose the other end 35b is connected to the other lateral structure 20; a gas pipe 41 disposed in a gas-pipe accommodating space 36; and a porous body 40. An opening 38 opens to a substrate 8 and is covered with the porous body 40. A gas diffusion path 37 connects the gas-pipe accommodating space 36 and the opening 38. The electrode inner surface 39 faces the gas-pipe accommodating space 36 and opposes the pipe outer surface 42b. A nozzle hole group 42c is arranged in the second direction in the gas pipe 41, and faces a section 39a at a side opposite to the gas diffusion path 37 in the electrode inner surface 39.
摘要翻译：提供抑制膜厚分布的产生和膜质量分布的放电电极，薄膜沉积装置和太阳能电池的制造方法。放电电极包括基本上彼此平行并沿X方向延伸的两个横向结构20; 并且设置在两个横向结构之间的多个纵向结构21a基本上彼此平行，并且在大致正交于X方向的Y方向上延伸。纵向结构21a各自包括电极主体35，其一端35a连接到横向结构20中的一个，另一端35b连接到另一侧向结构20; 设置在气体管容纳空间36中的气体管道41; 和多孔体40.开口38通向基板8并被多孔体40覆盖。气体扩散路37连接气体管容纳空间36和开口38.电极内表面39面对气体 - 管容纳空间36并与管外表面42b相对。喷嘴孔组42c沿气体配管41的第二方向排列，与电极内表面39的与气体扩散路37相反侧的部分39a相对。

14. 发明申请

US20130004708A1 MOLDING APPARATUS, METHOD OF FORMING MOLDED PRODUCT, AND MOLDED PRODUCT 审中-公开
标题翻译：成型设备，成型产品的方法和模制产品
公开(公告)号：US20130004708A1
公开(公告)日：2013-01-03
申请号：US13530542
申请日：2012-06-22
申请人： Shun Kayama , Yukiko Shimizu , Atsuhide Hanyu , Susumu Hoshino , Keisuke Kawamura
发明人： Shun Kayama , Yukiko Shimizu , Atsuhide Hanyu , Susumu Hoshino , Keisuke Kawamura
IPC分类号： B29C45/26 , B32B3/24 , B29C45/00 , B29C45/03 , B29C45/72
CPC分类号： B29C45/2628 , B29C45/5675 , Y10T428/24273
摘要： A molding apparatus includes a cavity mold, a core mold, a core pin, and a cavity pin. After molten resin has been filled in a cavity, at least one of the core pin and the cavity pin is moved to be pressed onto the molten resin so that a part of the molten resin is compressed before the molten resin is cured, and a molded hole is formed by cutting off the compressed part of the molten resin by moving the core pin and the cavity pin.
摘要翻译：模制装置包括腔模，芯模，芯销和腔销。在将熔融树脂填充到空腔中之后，芯销和空心销中的至少一个被移动以压在熔融树脂上，使得熔融树脂的一部分在熔融树脂固化之前被压缩，并且模制通过移动芯销和空腔销来切断熔融树脂的压缩部分而形成孔。

15. 发明申请

US20100310785A1 VACUUM PROCESSING APPARATUS AND OPERATING METHOD FOR VACUUM PROCESSING APPARATUS 失效
标题翻译：真空加工设备的真空处理设备和操作方法
公开(公告)号：US20100310785A1
公开(公告)日：2010-12-09
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： C23C16/00 , B05C11/00 , B05D3/00
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).
摘要翻译：本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。

16. 发明授权

US07204887B2 Wafer holding, wafer support member, wafer boat and heat treatment furnace 有权
标题翻译：晶圆保持，晶片支撑构件，晶片舟和热处理炉
公开(公告)号：US07204887B2
公开(公告)日：2007-04-17
申请号：US10149939
申请日：2001-10-16
申请人： Keisuke Kawamura , Tsutomu Sasaki , Atsuki Matsumura , Atsushi Ikari , Isao Hamaguchi , Yoshiharu Inoue , Koki Tanaka , Shunichi Hayashi
发明人： Keisuke Kawamura , Tsutomu Sasaki , Atsuki Matsumura , Atsushi Ikari , Isao Hamaguchi , Yoshiharu Inoue , Koki Tanaka , Shunichi Hayashi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/68735 , H01L21/67309 , H01L21/6875 , Y10S206/832
摘要： The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.
摘要翻译：本发明提供一种能够在硅晶片的高温热处理中不降低生产率和低成本地充分抑制滑移位错的晶片保持器，晶片支撑构件，晶片舟皿和热处理炉，以及所述晶片保持器的特征在于：晶片保持器由晶片支撑板和安装在所述晶片支撑板上的三个或更多个晶片支撑构件组成，每个晶片支撑构件具有晶片支撑部分或更多个; 所述晶片支撑构件中的至少一个是倾斜晶片支撑构件，其在上表面上具有多个向上凸起的晶片支撑部分并且可相对于所述晶片支撑板倾斜; 并且晶片由至少四个晶片支撑部分支撑。

17. 发明授权

US06007681A Apparatus and method for treating exhaust gas and pulse generator used therefor 失效
标题翻译：用于处理废气的设备和方法及用于其的脉冲发生器
公开(公告)号：US06007681A
公开(公告)日：1999-12-28
申请号：US825913
申请日：1997-04-02
申请人： Keisuke Kawamura , Tetsuro Shigemizu , Hirohisa Yoshida , Masayoshi Murata
发明人： Keisuke Kawamura , Tetsuro Shigemizu , Hirohisa Yoshida , Masayoshi Murata
IPC分类号： B01D53/32 , B01J19/08 , F01N3/08
CPC分类号： F01N3/0892 , B01D53/32 , B01J19/088 , B01D2259/818 , B01J2219/0807 , B01J2219/0875 , B01J2219/0894
摘要： An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V.sub.1, V.sub.21 . . . and V.sub.n) are connected to the reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V.sub.0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1.sub.-1, 1.sub.-2, 2.sub.-1, 2.sub.-2, . . . , N.sub.-1 and N.sub.-2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S.sub.1).
摘要翻译：一种处理废气的设备和方法。在该装置中，多个级的反应室（R1，R2，...和Rn）沿废气流的方向串联连接。此外，高压电源（V1，V21 ...和Vn）分别连接到电抗器室（R1，R2，...和Rn）。此外，在这些反应器室的每一个中，产生流光放电器等离子体。此外，放置阶段的反应室的下游越下游，要投入反应器室的较低能量变为。在气体分解单元中产生的电子的密度在排气流的上游侧的部分高，并且其下游侧的部分的电子密度低。另外，本发明还提供一种脉冲发生器，其中作为直流充电器（V0）的输出电压的高电压同时施加到多个分布常数线路（或传输线路）（1-1,1） -2,2-1,2-2，...，N-1和N-2），它们通过信号短路开关（S1）彼此并联连接。

18. 发明授权

US08529704B2 Vacuum processing apparatus and operating method for vacuum processing apparatus 失效
标题翻译：真空处理装置及真空处理装置的操作方法
公开(公告)号：US08529704B2
公开(公告)日：2013-09-10
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： B08B5/04
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).
摘要翻译：用于清洁真空处理装置的操作方法包括当预定数量的成膜过程完成时，将清洁气体进料到真空处理设备的成膜室中。基于薄膜沉积相关的操作时间（薄膜沉积时间和薄膜沉积准备时间）和清洁相关的操作时间（清洁程序时间，清洁程序准备时间）来计算预定数量的成膜沉积工艺，以及预沉积膜沉积时间）。

19. 发明申请

US20130040103A1 METHOD OF MANUFACTURING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND SINGLE CRYSTAL 3C-SIC SUBSTRATE OBTAINED FROM THE MANUFACTURING METHOD 有权
标题翻译：制造单晶3C-SIC基板的方法和从制造方法获得的单晶3C-SIC基板
公开(公告)号：US20130040103A1
公开(公告)日：2013-02-14
申请号：US13638070
申请日：2011-03-14
申请人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
发明人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
IPC分类号： C30B25/16 , C30B29/36 , C30B25/14
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/36 , H01L21/0237 , H01L21/02447 , H01L21/02494 , H01L21/02529 , H01L21/02614 , H01L21/02661 , Y10T428/24355
摘要： To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.
摘要翻译：提供一种制造可以显着减少在外延生长处理中产生的表面缺陷的单晶3C-SiC衬底的方法，并且可以确保作为半导体器件的质量，同时简化后处理。提供了通过外延生长在基底基板上形成单晶3C-SiC层的单晶3C-SiC基板的制造方法。进行形成单晶3C-SiC层的表面状态的第一生长阶段，该表面状态被构造成具有高平坦度的表面和表面上的表面凹坑散射。进行进一步外延生长在第一生长阶段中获得的单晶3C-SiC层以填充表面凹坑的第二生长阶段。

20. 发明授权

US07067402B2 Production method for SIMOX substrate and SIMOX substrate 有权
标题翻译： SIMOX基板和SIMOX基板的生产方法
公开(公告)号：US07067402B2
公开(公告)日：2006-06-27
申请号：US10473692
申请日：2002-03-28
申请人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
发明人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76243
摘要： A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied. The SIMOX substrate has a surface silicon layer 10 to 400 nm in thickness and a buried oxide layer 60 to 250 nm in thickness.
摘要翻译：提供了通过植入氧（“SIMOX”）底物的分离及其制备方法。可以通过在低剂量范围内使用氧离子注入量来制造SIMOX基板。衬底是具有增加BOX层厚度的高质量SOI衬底。更具体地，提供SIMOX基板及其制造方法，从而通过在硅基板中注入氧离子并在其后进行高温热处理来形成掩埋氧化物层和表面硅层。通过在氧离子注入后施加高温热处理来提供掩埋氧化物层; 然后施加额外的氧离子注入，使得注入氧的分布的峰位置位于比已经形成的掩埋氧化物层和其下的衬底之间的界面低的部分。然后，进行另一种高温热处理。 SIMOX基板具有厚度为10至400nm的表面硅层和厚度为60至250nm的掩埋氧化物层。

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