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    • 4. 发明申请
    • Polishing equipment, and method of manufacturing semiconductor device using the equipment
    • 抛光设备,以及使用该设备制造半导体器件的方法
    • US20050107016A1
    • 2005-05-19
    • US10941022
    • 2004-09-15
    • Susumu Hoshino
    • Susumu Hoshino
    • B24B37/04B24B41/06B24B57/02B24B5/00
    • B24B37/04B24B41/061B24B57/02
    • Polishing equipment, comprising a polishing head (30) having an opened hollow mixing tank (32) on the opposite side of the side thereof where a polishing pad (36) is installed, a slurry feed mechanism (50) for feeding slurry into the mixing tank (32), an additive liquid feed mechanism (60) for feeding additive liquid used by adding to the slurry into the mixing tank (32), and a mixed liquid feed tube (34) extending from the mixing tank (32) into the polishing head (30) and opened to near the rotating center of the polishing pad (36), wherein the slurry fed by the slurry feed mechanism (50) and the additive liquid fed by the additive liquid feed mechanism (60) are fed from the mixed liquid feed tube (34) to the outside of the polishing pad (36) in the mixed state in the mixing tank (32).
    • 抛光设备包括:抛光头(30),其具有在其侧面上设置有抛光垫(36)的相对侧上的开口的中空混合槽(32),用于将浆料供入混合物的浆料供给机构(50) 储罐(32),用于将通过添加到混合罐(32)中的浆料而供给的添加液供给的添加剂液体供给机构(60)和从混合罐(32)延伸到混合罐 抛光头(30),并且被打开到抛光垫(36)的旋转中心附近,其中由浆料供给机构(50)供给的浆料和由添加剂液体供给机构(60)供给的添加剂液体从 混合液体供给管(34)在混合罐(32)中以混合状态移动到抛光垫(36)的外部。
    • 5. 发明授权
    • Processing device, processing method and method of manufacturing semiconductor device
    • 半导体器件的制造装置,加工方法及制造方法
    • US07306509B2
    • 2007-12-11
    • US10792396
    • 2004-03-04
    • Susumu Hoshino
    • Susumu Hoshino
    • B24B1/00
    • B24B37/345B24B37/042H01L21/30625
    • A CMP apparatus 1 is constructed comprising a wafer chucking mechanism 20 which carries and holds a wafer W, a polishing pad 4 which performs polishing working on the surface of the wafer W that is being worked, and a polishing head 2 which holds the polishing pad 4. The polishing pad 4 held by the polishing head 2 performs polishing working on the surface that is being worked on the wafer W while being caused to move in contact with this surface that is being worked on the wafer W, which is carried and held by the wafer chucking mechanism 20. This polishing pad 4 has a rough polishing pad 4a that can partially work the surface that is being worked, and intermediate polishing and finishing polishing pads 4b and 4c that can uniformly work the entire surface of the surface that is being worked. The apparatus is constructed so that working that flattens undulations with indentations and projections in the film thickness of the surface that is being worked is performed by the rough polishing pad 4a, and the surface that is being worked is then uniformly worked by the intermediate polishing and finishing polishing pads 4b and 4c. As a result, even in cases where there are undulations with indentations and projections in the initial film thickness of the surface that is being worked, the surface that is being worked can be worked into a flat surface with a desired uniform residual film thickness.
    • 构造CMP装置1,其包括承载和保持晶片W的晶片夹持机构20,对正在被加工的晶片W的表面进行抛光加工的抛光垫4和保持抛光垫的抛光头2 4。 由抛光头2保持的抛光垫4对被加工在晶片W上的表面进行抛光加工,同时与被加工在晶片W上的表面接触地移动,晶片W由 晶片夹持机构20。 该抛光垫4具有可以部分地对正在加工的表面进行加工的粗抛光垫4a和可以均匀地加工被加工表面的整个表面的中间抛光和抛光抛光垫4b和4c。 该装置被构造成使得通过粗抛光垫4a执行在被加工表面的膜厚度上用凹陷和突起凹陷的波动的工作,然后通过中间抛光均匀地加工待加工的表面 以及精整抛光垫4b和4c。 结果,即使在正在加工的表面的初始膜厚度上具有凹陷和突起的波动的情况下,可以将正在加工的表面加工成具有所需的均匀残留膜厚度的平坦表面。
    • 6. 发明申请
    • Dressing tool, dressing device, dressing method, processing device and semiconductor device producing method
    • 修整工具,修整装置,修整方法,加工装置和半导体装置的制造方法
    • US20050032467A1
    • 2005-02-10
    • US10791670
    • 2004-03-03
    • Susumu HoshinoEiichi YamamotoTakahiko Mitsui
    • Susumu HoshinoEiichi YamamotoTakahiko Mitsui
    • B24B53/007B24B53/017B24B1/00B24B21/18
    • B24B53/017
    • A dressing apparatus DA is constructed from a pad holding mechanism 10 which holds a polishing pad 15 that has a doughnut disk-form pad surface 15a, and which causes this polishing pad 15 to rotate, a dressing tool 2 which has a substantially rectangular dressing surface 3, and a dressing tool holding mechanism 1 which holds the dressing tool 2 so that the dressing surface 3 of this dressing tool 2 is caused to face the pad surface 15a of the polishing pad 15 that is held and caused to rotate by the pad holding mechanism 10. The dressing tool holding mechanism 1 causes the held dressing tool 2 to contact the pad surface 15a in a state in which the centerline L1 in the direction of width of the dressing surface 3 is oriented so that this centerline extends in the radial direction of the pad surface 15a, and thus causes dressing to be performed. As a result, the flatness of the working surface following dressing can be improved.
    • 修整装置DA由保持具有环形盘形垫表面15a的抛光垫15并使该抛光垫15旋转的衬垫保持机构10构成,修整工具2具有大致矩形的修整表面 3,以及修整工具保持机构1,其保持修整工具2,使得该修整工具2的修整面3与被保持并通过垫保持旋转的抛光垫15的焊盘表面15a相对 修整工具保持机构1使得保持的修整工具2在修整面3的宽度方向上的中心线L1被定向成使得该中心线沿径向方向延伸的状态下接触焊盘表面15a ,从而进行修整。 结果,能够提高修整后的工作面的平坦度。
    • 7. 发明授权
    • Computational circuit
    • 计算电路
    • US06201430B1
    • 2001-03-13
    • US09459889
    • 1999-12-14
    • Hideyuki HaginoSusumu Hoshino
    • Hideyuki HaginoSusumu Hoshino
    • G06F7556
    • G06G7/14
    • The computational circuit adds a drain current of a first MIS transistor which is driven by inputting a signal obtained by superimposing an AC signal to a DC voltage, and a drain current of a second MIS transistor which is driven by inputting a signal obtained by superimposing the same AC signal as above but reversal in phase to the DC voltage, and subtracts a drain current of a third MIS transistor driven by supplying the DC voltage to the gate thereof so as to erase DC components of the outputs of the first and second MIS transistors. Thereby, it is possible to produce a current in proportional to square of the AC signal.
    • 计算电路增加第一MIS晶体管的漏极电流,该漏极电流通过将通过将AC信号叠加到DC电压而获得的信号和第二MIS晶体管的漏极电流来驱动,所述漏极电流通过输入通过将 与上述相同的AC信号,同相到DC电压反相,并且减去通过向其栅极提供DC电压而驱动的第三MIS晶体管的漏极电流,以便擦除第一和第二MIS晶体管的输出的DC分量 。 由此,可以产生与交流信号的平方成正比的电流。
    • 9. 发明申请
    • ELECTRIC VACUUM CLEANER
    • 电动真空清洁器
    • US20070050094A1
    • 2007-03-01
    • US11467939
    • 2006-08-29
    • HIROYUKI KUSHIDAAkihiro IshizawaSusumu Hoshino
    • HIROYUKI KUSHIDAAkihiro IshizawaSusumu Hoshino
    • G05D11/00H01H43/00A47L5/00
    • A47L9/2857A47L9/2831A47L9/2842H02P7/285H02P25/14Y02B40/82
    • An electric vacuum cleaner comprises an electric blower having a commutator motor connected to an alternate current power source though a switching element, a current detecting section detecting a load current flowing in the electric blower, a control section generating a control signal that controls the input power to the vacuum cleaner by adjusting a trigger time of the switching element, wherein a current detecting circuit sends a signal having a periodic waveform derived from the alternate current source to the control section. The control section sets an operation mode to a preparation mode or a cleaning mode. Initially, in the preparation mode a correction value of the load current is acquired with the trigger time set at a predetermined point. In the cleaning mode, the input power is controlled by varying the trigger time of the control signal according to a difference between a load current detected by the current detecting section and the correction value acquired in the preparation mode.
    • 电动吸尘器包括电动鼓风机,其具有通过开关元件连接到交流电源的换向器电动机,检测在电动鼓风机中流动的负载电流的电流检测部分,产生控制输入功率的控制信号的控制部分 通过调节开关元件的触发时间到真空吸尘器,其中电流检测电路将具有从交流电流源导出的周期波形的信号发送到控制部分。 控制部分将操作模式设置为准备模式或清洁模式。 最初,在准备模式中,将触发时间设定为规定点,获取负载电流的修正值。 在清洁模式中,通过根据由电流检测部检测到的负载电流与在准备模式中获取的校正值之间的差异来改变控制信号的触发时间来控制输入功率。