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    • 1. 发明授权
    • Pulse generator for treating exhaust gas
    • 用于处理废气的脉冲发生器
    • US06344701B1
    • 2002-02-05
    • US09369842
    • 1999-08-09
    • Keisuke KawamuraTetsuro ShigemizuHirohisa YoshidaMasayoshi Murata
    • Keisuke KawamuraTetsuro ShigemizuHirohisa YoshidaMasayoshi Murata
    • H03K302
    • F01N3/0892B01D53/32B01D2259/818B01J19/088B01J2219/0807B01J2219/0875B01J2219/0894
    • An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R1, R2, . . . Rn) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V1, V2, . . . and Vn) are connected to the reactor chambers (R1, R2, . . . and Rn), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1−1, 1−2, 2−1, 2−2, . . . , N−1 and N−2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S1).
    • 一种处理废气的设备和方法。 在这种装置中,多个反应室(R1,R2,...,Rn)在废气流的方向上串联连接。 此外,高压电源(V1,V2,...和Vn)分别连接到电抗器室(R1,R2,...和Rn)。 此外,在这些反应器室的每一个中,产生流光放电器等离子体。 此外,放置阶段的反应室的下游越下游,要投入反应器室的较低能量变为。 在气体分解单元中产生的电子的密度在排气流的上游侧的部分高,并且其下游侧的部分的电子密度低。 另外,本发明还提供一种脉冲发生器,其中作为直流充电器(V0)的输出电压的高电压同时施加到多个分布常数线路(或传输线路)(1-1,1) -2,2-1,2-2,...,N-1和N-2),它们通过信号短路开关(S1)彼此并联连接。
    • 2. 发明授权
    • Apparatus and method for treating exhaust gas and pulse generator used
therefor
    • 用于处理废气的设备和方法及用于其的脉冲发生器
    • US06007681A
    • 1999-12-28
    • US825913
    • 1997-04-02
    • Keisuke KawamuraTetsuro ShigemizuHirohisa YoshidaMasayoshi Murata
    • Keisuke KawamuraTetsuro ShigemizuHirohisa YoshidaMasayoshi Murata
    • B01D53/32B01J19/08F01N3/08
    • F01N3/0892B01D53/32B01J19/088B01D2259/818B01J2219/0807B01J2219/0875B01J2219/0894
    • An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V.sub.1, V.sub.21 . . . and V.sub.n) are connected to the reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V.sub.0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1.sub.-1, 1.sub.-2, 2.sub.-1, 2.sub.-2, . . . , N.sub.-1 and N.sub.-2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S.sub.1).
    • 一种处理废气的设备和方法。 在该装置中,多个级的反应室(R1,R2,...和Rn)沿废气流的方向串联连接。 此外,高压电源(V1,V21 ...和Vn)分别连接到电抗器室(R1,R2,...和Rn)。 此外,在这些反应器室的每一个中,产生流光放电器等离子体。 此外,放置阶段的反应室的下游越下游,要投入反应器室的较低能量变为。 在气体分解单元中产生的电子的密度在排气流的上游侧的部分高,并且其下游侧的部分的电子密度低。 另外,本发明还提供一种脉冲发生器,其中作为直流充电器(V0)的输出电压的高电压同时施加到多个分布常数线路(或传输线路)(1-1,1) -2,2-1,2-2,...,N-1和N-2),它们通过信号短路开关(S1)彼此并联连接。
    • 4. 发明授权
    • Plasma chemical vapor deposition apparatus
    • 等离子体化学气相沉积装置
    • US06363881B2
    • 2002-04-02
    • US09232600
    • 1999-01-19
    • Masayoshi MurataYoshiaki TakeuchiHiroshi MashimaAkemi TakanoHirohisa Yoshida
    • Masayoshi MurataYoshiaki TakeuchiHiroshi MashimaAkemi TakanoHirohisa Yoshida
    • C23C16509
    • H01J37/32082H01J37/32541
    • Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.
    • 公开了一种等离子体化学气相沉积设备,用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜,微晶薄膜或多晶薄膜,其包括反应 容器,用于将反应气体供给到反应容器中的装置,用于将反应气体的废气排出反应容器的排出装置,设置在反应容器内的用于排放产生的梯形电极, 用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz,用于加热和支撑目标衬底的加热器,加热器与反应容器内平行于梯形电极放电产生 以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。
    • 10. 发明授权
    • Liquid crystal device
    • 液晶装置
    • US06603528B1
    • 2003-08-05
    • US09458065
    • 1999-12-10
    • Toshimitsu TanakaMasayoshi MurataTakahiro Hachisu
    • Toshimitsu TanakaMasayoshi MurataTakahiro Hachisu
    • G02F11339
    • G02F1/13394G02F1/141
    • A liquid crystal device is constituted by a pair of substantially parallel substrates disposed opposite to each other to leave a gap extending two-dimensionally therebetween including a rectangular wider gap region and a peripheral frame-shaped narrower gap region surrounding the wider gap region, a plurality of spacers disposed in the gap over the wider and narrower gap regions, and a liquid crystal disposed between the pair of substrates so as to form pixels in the wider gap region. The spacers are disposed to have a larger volume per unit substrate area in the wider gap region and a smaller volume per unit substrate area in the narrower gap region, thus providing a uniform cell gap between the substrates.
    • 液晶装置由一对彼此相对布置的基本平行的基板构成,以在其间具有二维延伸的间隙,包括矩形宽的间隙区域和围绕较宽的间隙区域的周边框架形的较窄的间隙区域,多个 设置在更宽和更窄的间隙区域上的间隙中的间隔件,以及设置在该对基板之间的液晶,以在更宽的间隙区域中形成像素。 间隔物设置成在较宽的间隙区域中每单位基底面积的体积更大,并且在较窄的间隙区域中每单位基底面积的体积更小,从而在基底之间提供均匀的细胞间隙。