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    • 13. 发明授权
    • Semiconductor pressure sensor utilizing capacitance change
    • 半导体压力传感器利用电容变化
    • US06631645B1
    • 2003-10-14
    • US09653165
    • 2000-09-01
    • Shinya SatouKeiji HanzawaSatoshi ShimadaNaohiro MonmaAtsushi Miyazaki
    • Shinya SatouKeiji HanzawaSatoshi ShimadaNaohiro MonmaAtsushi Miyazaki
    • G01L912
    • G01L9/0073G01L9/125
    • An S/N ratio of an output of a semiconductor pressure sensor is improved, the sensor being of an electrostatic capacitance type pressure sensor for generating an output based upon a ratio between capacitances of a pressure sensitive capacitance element and a reference capacitance element. This semiconductor pressure sensor has: a pressure sensitive capacitance element having an electrostatic capacitance Cs changing with a pressure to be detected; a reference capacitance element having an electrostatic capacitance Cr not changing with the pressure; and a unit for detecting the pressure by outputting a signal corresponding to a ratio between the capacitances Cs and Cr, wherein an initial value Cr0 of the capacitance Cr and an initial value Cs0 of the capacitance Cs are defined by 1.2
    • 提高半导体压力传感器的输出的S / N比,该传感器是用于根据压敏电容元件的电容与参考电容元件之间的比率产生输出的静电电容式压力传感器。 该半导体压力传感器具有:静电电容Cs随着要检测的压力而变化的压敏电容元件; 具有不随压力变化的静电电容Cr的参考电容元件; 以及用于通过输出对应于电容Cs和Cr之间的比率的信号来检测压力的单元,其中电容Cr的初始值Cr 0 和初始值Cs 电容Cs的 0 由1.2 0 / Cs 0 <1.8。 通过改变两个元件的电极面积等来调节CR 0 / Cs 0 的比例。 以这种方式,可以获得较大的压力表输出DeltaV,降低放大器的放大系数,并提供传感器的高精度。
    • 15. 发明授权
    • Thermal flow meter
    • 热流量计
    • US09188470B2
    • 2015-11-17
    • US13813094
    • 2011-07-28
    • Hiroshi NakanoMasahiro MatsumotoSatoshi AsanoKeiji Hanzawa
    • Hiroshi NakanoMasahiro MatsumotoSatoshi AsanoKeiji Hanzawa
    • G01F1/68G01F1/692G01F1/684G01F1/699
    • G01F1/692G01F1/6842G01F1/699
    • An object of the present invention is to provide a thermal type flow rate sensor that offers high sensitivity and improved reliability. A sensor element according to the present invention includes a semiconductor substrate, a cavity portion formed on the semiconductor substrate, a heating resistor formed on the cavity portion via an electrically insulating film, a heating temperature sensor for detecting heating temperature of the heating resistor, and a driving circuit for controlling the heating temperature of the heating resistor using the temperature detected by the heating temperature sensor. The heating temperature sensor comprises temperature-sensitive resistors having resistance values varying according to temperature and disposed upstream and downstream of a direction of flow of a fluid to be measured relative to the heating resistor and on upper and lower sides in a direction perpendicular to the direction of flow of the fluid to be measured relative to the heating resistor.
    • 本发明的目的是提供一种提供高灵敏度和改善的可靠性的热式流量传感器。 根据本发明的传感器元件包括半导体衬底,形成在半导体衬底上的空腔部分,通过电绝缘膜形成在空腔部分上的发热电阻器,用于检测加热电阻器的加热温度的加热温度传感器,以及 使用由加热温度传感器检测到的温度来控制加热电阻器的加热温度的驱动电路。 加热温度传感器包括具有根据温度变化的电阻值的温度敏感电阻器,并且设置在相对于加热电阻器的被测量流体的流动方向的上游和下游以及垂直于该方向的方向上下侧 要测量的流体相对于加热电阻器的流动。
    • 17. 发明授权
    • Thermal-type flowmeter
    • 热式流量计
    • US08186213B2
    • 2012-05-29
    • US12708387
    • 2010-02-18
    • Hiroshi NakanoMasahiro MatsumotoKeiji Hanzawa
    • Hiroshi NakanoMasahiro MatsumotoKeiji Hanzawa
    • G01F1/68
    • G01F5/00G01F1/692G01F1/698
    • The present invention provides a highly-sensitive thermal-type flow-rate sensor with enhanced reliability. Provided is a thermal-type flow-rate sensor including: a passage into which a measurement-target fluid is introduced; and a sensor element which is provided in the passage and which measures the flow rate of the measurement-target fluid. The sensor element 1 includes: a semiconductor substrate; a hollow portion formed in the semiconductor substrate; and a heating resistor formed on an electric insulating film above the hollow portion. The sensor element measures the flow rate of the measurement-target fluid by radiating heat from the heating resistor to the measurement-target fluid. When Lh is the length of the heating resistor in a direction perpendicular to a flowing direction of the measurement-target fluid and Wd is the shortest distance to an upstream-side edge of the heating resistor from an edge of the hollow portion (an outer peripheral edge of a diaphragm) in the flowing direction of the measurement-target fluid, Wd≧0.4×Lh is satisfied in a relation between Lh and Wd.
    • 本发明提供了一种具有增强的可靠性的高灵敏度热式流量传感器。 本发明提供一种热式流量传感器,包括:导入测定对象流体的通道; 以及传感器元件,其设置在通道内并测量测量对象流体的流量。 传感器元件1包括:半导体衬底; 形成在半导体衬底中的中空部分; 以及形成在中空部分上方的电绝缘膜上的加热电阻器。 传感器元件通过从加热电阻器向测量目标流体辐射热量来测量测量目标流体的流量。 当Lh是与测量对象流体的流动方向垂直的方向上的加热电阻器的长度,Wd是从中空部分的边缘到加热电阻器的上游侧边缘的最短距离(外周边 在测量目标流体的流动方向上,隔膜的边缘)在Lh和Wd之间的关系中满足Wd≥0.4×Lh。