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    • 14. 发明申请
    • Optimizing selected variables of an optical metrology system
    • 优化光学测量系统的选定变量
    • US20080007739A1
    • 2008-01-10
    • US11484460
    • 2006-07-10
    • Vi VuongJunwei Bao
    • Vi VuongJunwei Bao
    • G01B11/14
    • G01B11/24G03F7/70625
    • A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure. The first patterned structure has underlying film thicknesses, critical dimension, and profile. The metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster. The metrology cluster is configured to measure diffraction signals off the first patterned and the first unpatterned structure. The metrology model optimizer is configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters. The real time profile estimator is configured to use the optimized optical metrology model from the optical metrology model optimizer, the measured diffraction signals off the first patterned structure, and a fixed value within the range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters. The real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure.
    • 使用光学测量模型检查在半导体晶片上形成的图案化结构的系统包括第一制造集群,度量集群,光学计量模型优化器和实时分布估计器。 第一制造集群被配置为处理晶片,晶片具有第一图案化和第一未图案化结构。 第一图案结构具有底层膜厚度,临界尺寸和轮廓。 测量集群包括耦合到第一制造集群的一个或多个光学测量装置。 测量簇被配置为测量离开第一图案和第一未图案化结构的衍射信号。 计量模型优化器被配置为使用离开第一图案化结构的一个或多个测量的衍射信号以及浮动轮廓参数,材料折射参数和度量设备参数来优化第一图案化结构的光学测量模型。 实时轮廓估计器被配置为使用来自光学计量学模型优化器的优化的光学测量模型,离开第一图案化结构的测量的衍射信号,以及在材料折射之间的至少一个参数的值范围内的固定值 参数和计量装置参数。 实时轮廓估计器被配置为创建包括第一图案化结构的底层膜厚度,临界尺寸和轮廓的输出。
    • 15. 发明申请
    • In-die optical metrology
    • 模内光学计量学
    • US20070229855A1
    • 2007-10-04
    • US11396164
    • 2006-03-30
    • Shifang LiJunwei BaoVi Vuong
    • Shifang LiJunwei BaoVi Vuong
    • G01B11/14
    • G01B11/24
    • To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.
    • 为了确定半导体晶片上的管芯内结构的一个或多个特征,在要形成在测试焊盘上的测试结构的一个或多个特征与相应的管芯内结构的一个或多个特征之间确定相关性。 获得测量结果测得的衍射信号。 使用测量的衍射信号确定测试结构的一个或多个特征。 基于测试结构的一个或多个确定的特征和确定的相关性来确定管芯内结构的一个或多个特征。
    • 19. 发明授权
    • Profile refinement for integrated circuit metrology
    • 集成电路测量的轮廓细化
    • US06609086B1
    • 2003-08-19
    • US10075904
    • 2002-02-12
    • Junwei BaoSrinivas DoddiNickhil JakatdarVi Vuong
    • Junwei BaoSrinivas DoddiNickhil JakatdarVi Vuong
    • G06F1900
    • G01B11/24G01N21/4788G03F7/70625
    • The present invention includes a method and system for determining the profile of a structure in an integrated circuit from a measured signal, the signal measured off the structure with a metrology device, selecting a best match of the measured signal in a profile data space, the profile data space having data points with a specified extent of non-linearity, and performing a refinement procedure to determine refined profile parameters. One embodiment includes a refinement procedure comprising finding a polyhedron in a function domain of cost functions of the profile library signals and profile parameters and minimizing the total cost function using the weighted average method. Other embodiments include profile parameter refinement procedures using sensitivity analysis, a clustering approach, regression-based methods, localized fine-resolution refinement library method, iterative library refinement method, and other cost optimization or refinement algorithms, procedures, and methods. Refinement of profile parameters may be invoked automatically or invoked based on predetermined criteria such as exceeding an error metric between the measured signal versus the best match profile library.
    • 本发明包括一种用于从测量信号确定集成电路中的结构的轮廓的方法和系统,使用测量装置测量结构的信号,在轮廓数据空间中选择测量信号的最佳匹配, 具有指定非线性范围的数据点的简档数据空间,以及执行细化过程以确定精确的简档参数。 一个实施例包括细化程序,包括在简档库信号和简档参数的成本函数的功能域中找到多面体,并且使用加权平均方法最小化总成本函数。 其他实施例包括使用灵敏度分析的简档参数细化程序,聚类方法,基于回归的方法,局部精细分辨率细化库方法,迭代库细化方法以及其他成本优化或细化算法,程序和方法。 简档参数的细化可以基于预定标准自动调用或调用,例如超过测量信号与最佳匹配简档库之间的误差度量。