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1. 发明授权

US07171284B2 Optical metrology model optimization based on goals 有权
公开(公告)号：US07171284B2
公开(公告)日：2007-01-30
申请号：US10946729
申请日：2004-09-21
申请人： Vi Vuong , Emmanuel Drege , Shifang Ll , Junwei Bao
发明人： Vi Vuong , Emmanuel Drege , Shifang Ll , Junwei Bao
IPC分类号： G06F19/00 , H01L21/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

2. 发明授权

US07588949B2 Optical metrology model optimization based on goals 有权
标题翻译：基于目标的光学计量模型优化
公开(公告)号：US07588949B2
公开(公告)日：2009-09-15
申请号：US11699837
申请日：2007-01-29
申请人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
IPC分类号： H01L21/00 , G06F19/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
摘要翻译：评估用于测量晶片结构的光学测量模型的优化。开发了具有度量模型变量的光学测量模型，其包括轮廓模型的轮廓模型参数。选择计量模型优化的一个或多个目标。选择要用于评估一个或多个所选目标的一个或多个简档模型参数。选择要设置为固定值的一个或多个计量模型变量。一个或多个选定的计量模型变量被设置为固定值。设置一个或多个所选目标的一个或多个终止标准。光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。然后确定所获得的测量是否满足一个或多个终止标准。

3. 发明申请

US20070198211A1 Selection of wavelengths for integrated circuit optical metrology 有权
公开(公告)号：US20070198211A1
公开(公告)日：2007-08-23
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01B11/02
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

4. 发明授权

US07505153B2 Model and parameter selection for optical metrology 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US07505153B2
公开(公告)日：2009-03-17
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B15/00 , G01B7/00 , G01N21/86 , G01V8/00 , G06F15/00 , G01R31/26 , H01L21/66
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

5. 发明申请

US20070135959A1 Optical metrology model optimization based on goals 有权
标题翻译：基于目标的光学计量模型优化
公开(公告)号：US20070135959A1
公开(公告)日：2007-06-14
申请号：US11699837
申请日：2007-01-29
申请人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
IPC分类号： G06F19/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.
摘要翻译：评估用于测量晶片结构的光学测量模型的优化。开发了具有度量模型变量的光学测量模型，其包括轮廓模型的轮廓模型参数。选择计量模型优化的一个或多个目标。选择要用于评估一个或多个所选目标的一个或多个简档模型参数。选择要设置为固定值的一个或多个计量模型变量。一个或多个选定的计量模型变量被设置为固定值。设置一个或多个所选目标的一个或多个终止标准。光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。然后确定所获得的测量是否满足一个或多个终止标准。

6. 发明授权

US06853942B2 Metrology hardware adaptation with universal library 有权
标题翻译：通用图书馆的计量硬件调整
公开(公告)号：US06853942B2
公开(公告)日：2005-02-08
申请号：US10213485
申请日：2002-08-06
申请人： Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
发明人： Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
IPC分类号： G01N21/956 , G06F19/00 , G01B9/02 , G01B11/24 , G06K9/46
CPC分类号： G03F7/70516 , G01N21/956 , G03F7/70625
摘要： To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.
摘要翻译：为了产生用于半导体结构的光学测量的系数集合，获得用于一组参数的至少三个光学测量信号。光学测量信号指示从半导体结构衍射的光，并且改变该组参数中的至少一个参数的值以产生每个信号。获得至少三个光学测量信号之间的功能关系，所述功能关系包括至少三个系数值。确定来自功能关系的至少三个系数值的至少三组系数。

7. 发明授权

US07394554B2 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US07394554B2
公开(公告)日：2008-07-01
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/00
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology.To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

8. 发明申请

US20060064280A1 Optical metrology model optimization based on goals 有权
公开(公告)号：US20060064280A1
公开(公告)日：2006-03-23
申请号：US10946729
申请日：2004-09-21
申请人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
发明人： Vi Vuong , Emmanuel Drege , Shifang Li , Junwei Bao
IPC分类号： G06F15/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

9. 发明申请

US20050057748A1 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US20050057748A1
公开(公告)日：2005-03-17
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/24 , G01B11/30 , G01N21/00 , G01N21/17 , G01N21/84 , G01N21/956 , G01R31/26 , G06F19/00 , H01L21/02 , H01L21/66
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

10. 发明授权

US06842261B2 Integrated circuit profile value determination 有权
标题翻译：集成电路剖面值确定
公开(公告)号：US06842261B2
公开(公告)日：2005-01-11
申请号：US10228692
申请日：2002-08-26
申请人： Junwei Bao , Wen Jin , Emmanuel Drege , Srinivas Doddi , Vi Vuong
发明人： Junwei Bao , Wen Jin , Emmanuel Drege , Srinivas Doddi , Vi Vuong
IPC分类号： G01B11/02 , G01N21/47 , G01N21/88 , G06F19/00 , H01L21/00
CPC分类号： G01N21/4788 , G03F7/70625
摘要： A profile parameter value is determined in integrated circuit metrology by: a) determining a diffraction signal difference based on a measured diffraction signal and a previously generated diffraction signal; b) determining a first profile parameter value based on the previously generated diffraction signal; c) determining a first profile parameter value change based on the diffraction signal difference; d) determining a second profile parameter value based on the first profile parameter value change; e) determining a second profile parameter value change between the first and second profile parameter values; f) determining if the second profile parameter value change meets one or more preset criteria; and g) when the second profile parameter value change fails to meet the one or more preset criteria, iterating c) to g) using as the diffraction signal difference in the iteration of step c), a diffraction signal difference determined based on the measured diffraction signal and a diffraction signal for the second profile parameter value previously determined in step d), and as the first profile parameter value in the iteration of step e), the second profile parameter value previously determined in step d).
摘要翻译：在集成电路测量中通过以下方式确定轮廓参数值：a）基于测量的衍射信号和先前产生的衍射信号来确定衍射信号差; b）基于先前产生的衍射信号确定第一轮廓参数值; c）基于所述衍射信号差确定第一轮廓参数值变化; d）基于所述第一轮廓参数值变化来确定第二轮廓参数值; e）确定所述第一和第二轮廓参数值之间的第二轮廓参数值变化; f）确定第二轮廓参数值变化是否满足一个或多个预设标准; 并且g）当第二轮廓参数值改变不能满足一个或多个预设标准时，迭代c）至g）在步骤c）的迭代中使用作为衍射信号差的衍射信号差，基于测得的衍射信号和用于在步骤d）中预先确定的第二轮廓参数值的衍射信号，以及作为步骤e）的迭代中的第一轮廓参数值，在步骤d）中预先确定的第二轮廓参数值。

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