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1. 发明申请

US20070211260A1 Weighting function to enhance measured diffraction signals in optical metrology 有权
$Weighting function to enhance measured diffraction signals in optical metrology$
标题翻译：加权功能来增强光学测量中的测量衍射信号
公开(公告)号：US20070211260A1
公开(公告)日：2007-09-13
申请号：US11371752
申请日：2006-03-08
申请人： Vi Vuong , Junwei Bao , Shifang Li , Yan Chen
发明人： Vi Vuong , Junwei Bao , Shifang Li , Yan Chen
IPC分类号： G01B11/14
CPC分类号： G01B11/24
摘要： A weighting function is obtained to enhance measured diffraction signals used in optical metrology. To obtain the weighting function, a measured diffraction signal is obtained. The measured diffraction signal was measured from a site on a wafer using a photometric device. A first weighting function is defined based on noise that exists in the measured diffraction signal. A second weighting function is defined based on accuracy of the measured diffraction signal. A third weighting function is defined based on sensitivity of the measured diffraction signal. A fourth weighting function is defined based on one or more of the first, second, and third weighting functions.
摘要翻译：获得加权函数以增强在光学计量学中使用的测量的衍射信号。为了获得加权函数，获得测量的衍射信号。使用光度测量装置从晶片上的位置测量测量的衍射信号。基于存在于测量的衍射信号中的噪声来定义第一加权函数。基于测量的衍射信号的精度来定义第二加权函数。基于测量的衍射信号的灵敏度来定义第三加权函数。基于第一，第二和第三加权函数中的一个或多个来定义第四加权函数。

2. 发明授权

US07523021B2 Weighting function to enhance measured diffraction signals in optical metrology 有权
$Weighting function to enhance measured diffraction signals in optical metrology$
标题翻译：加权功能来增强光学测量中的测量衍射信号
公开(公告)号：US07523021B2
公开(公告)日：2009-04-21
申请号：US11371752
申请日：2006-03-08
申请人： Vi Vuong , Junwei Bao , Shifang Li , Yan Chen
发明人： Vi Vuong , Junwei Bao , Shifang Li , Yan Chen
IPC分类号： G01B11/02 , G06F19/00 , H03F1/26 , H04B15/00
CPC分类号： G01B11/24
摘要： A weighting function is obtained to enhance measured diffraction signals used in optical metrology. To obtain the weighting function, a measured diffraction signal is obtained. The measured diffraction signal was measured from a site on a wafer using a photometric device. A first weighting function is defined based on noise that exists in the measured diffraction signal. A second weighting function is defined based on accuracy of the measured diffraction signal. A third weighting function is defined based on sensitivity of the measured diffraction signal. A fourth weighting function is defined based on one or more of the first, second, and third weighting functions.
摘要翻译：获得加权函数以增强在光学计量学中使用的测量的衍射信号。为了获得加权函数，获得测量的衍射信号。使用光度测量装置从晶片上的位置测量测量的衍射信号。基于存在于测量的衍射信号中的噪声来定义第一加权函数。基于测量的衍射信号的精度来定义第二加权函数。基于测量的衍射信号的灵敏度来定义第三加权函数。基于第一，第二和第三加权函数中的一个或多个来定义第四加权函数。

3. 发明授权

US08346506B2 Transforming metrology data from a semiconductor treatment system using multivariate analysis 有权
标题翻译：使用多变量分析从半导体处理系统转换计量学数据
公开(公告)号：US08346506B2
公开(公告)日：2013-01-01
申请号：US13444746
申请日：2012-04-11
申请人： Vi Vuong , Junwei Bao , Yan Chen , Heiko Weichert , Sebastien Egret
发明人： Vi Vuong , Junwei Bao , Yan Chen , Heiko Weichert , Sebastien Egret
IPC分类号： G06F17/18
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

4. 发明申请

US20070185684A1 Transforming metrology data from a semiconductor treatment system using multivariate analysis 有权
标题翻译：使用多变量分析从半导体处理系统转换计量学数据
公开(公告)号：US20070185684A1
公开(公告)日：2007-08-09
申请号：US11349773
申请日：2006-02-07
申请人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
发明人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
IPC分类号： G06F15/00
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

5. 发明申请

US20120199287A1 TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS 有权
标题翻译：使用多重分析从半导体处理系统转换计量数据
公开(公告)号：US20120199287A1
公开(公告)日：2012-08-09
申请号：US13444746
申请日：2012-04-11
申请人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
发明人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
IPC分类号： H01L21/306
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

6. 发明授权

US08170833B2 Transforming metrology data from a semiconductor treatment system using multivariate analysis 有权
标题翻译：使用多变量分析从半导体处理系统转换计量学数据
公开(公告)号：US08170833B2
公开(公告)日：2012-05-01
申请号：US12336435
申请日：2008-12-16
申请人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
发明人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
IPC分类号： G06F17/18
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

7. 发明授权

US07467064B2 Transforming metrology data from a semiconductor treatment system using multivariate analysis 有权
标题翻译：使用多变量分析从半导体处理系统转换计量学数据
公开(公告)号：US07467064B2
公开(公告)日：2008-12-16
申请号：US11349773
申请日：2006-02-07
申请人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
发明人： Vi Vuong , Junwei Bao , Yan Chen , Weichert Heiko , Sebastien Egret
IPC分类号： G06F15/00
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的计量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

8. 发明授权

US07522294B2 Measuring a process parameter of a semiconductor fabrication process using optical metrology 失效
标题翻译：使用光学测量法测量半导体制造工艺的工艺参数
公开(公告)号：US07522294B2
公开(公告)日：2009-04-21
申请号：US12026485
申请日：2008-02-05
申请人： Hanyou Chu , Vi Vuong , Yan Chen
发明人： Hanyou Chu , Vi Vuong , Yan Chen
IPC分类号： G06F19/00 , H01L21/66
CPC分类号： H01L22/20
摘要： To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.
摘要翻译：为了测量半导体制造工艺的工艺参数，使用工艺参数的第一值在第一区域上执行制造工艺。使用过程参数的第二值在第二区域上执行制造过程。使用光学测量工具获得第一区域的第一测量。使用光学测量工具获得第二区域的第二测量。基于第一测量确定第一区域的一个或多个光学性质。基于第二测量来确定第二区域的一个或多个光学特性。制造工艺在第三区域进行。使用光学测量工具获得第三个区域的第三个测量值。基于第三测量和所确定的第一和第二区域的光学特性之间的关系确定过程参数的第三值。

9. 发明授权

US07505148B2 Matching optical metrology tools using spectra enhancement 失效
标题翻译：使用光谱增强匹配光学测量工具
公开(公告)号：US07505148B2
公开(公告)日：2009-03-17
申请号：US11601351
申请日：2006-11-16
申请人： Vi Vuong , Yan Chen , Holger Tuitje
发明人： Vi Vuong , Yan Chen , Holger Tuitje
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , G01N21/274 , G01N21/4788 , G01N21/93
摘要： Optical metrology tools are matched by obtaining a first set of measured diffraction signals, which was measured using a first optical metrology tool, and a second set of measured diffraction signals, which was measured using a second optical metrology tool. A first spectra-shift offset is generated based on the difference between the first set of measured diffraction signals and the second set of measured diffraction signals. A first noise weighting function for the first optical metrology tool is generated based on measured diffraction signals measured using the first optical metrology tool. A first measured diffraction signal measured using the first optical metrology tool is obtained. A first adjusted diffraction signal is generated by adjusting the first measured diffraction signal using the first spectra-shift offset and the first noise weighting function.
摘要翻译：通过获得使用第一光学测量工具测量的第一组测量的衍射信号和使用第二光学测量工具测量的第二组测量的衍射信号来匹配光学测量工具。基于第一组测量的衍射信号和第二组测量的衍射信号之间的差产生第一光谱偏移偏移。基于使用第一光学测量工具测量的测量的衍射信号，产生用于第一光学测量工具的第一噪声加权函数。获得使用第一光学测量工具测量的第一测量衍射信号。通过使用第一光谱移位偏移和第一噪声加权函数调整第一测量的衍射信号来产生第一调节的衍射信号。

10. 发明申请

US20080117437A1 Drift compensation for an optical metrology tool 有权
公开(公告)号：US20080117437A1
公开(公告)日：2008-05-22
申请号：US11601038
申请日：2006-11-16
申请人： Vi Vuong , Yan Chen , Holger Tuitje
发明人： Vi Vuong , Yan Chen , Holger Tuitje
IPC分类号： G01B11/24 , G01J1/10
CPC分类号： G01B11/24 , G01B21/045 , G01N21/276 , G01N21/4788 , G01N21/93 , G01N21/956
摘要： Drift in an optical metrology tool is compensated for by obtaining a first measured diffraction signal and a second measured diffraction signal of a first calibration structure mounted on the optical metrology tool. The first and second measured diffraction signals were measured using the optical metrology tool. The second measured diffraction signal was measured later in time than the first measured diffraction signal. A first drift function is generated based on the difference between the first and second measured diffraction signals. A third measured diffraction signal is obtained of a first structure formed on a first wafer using the optical metrology tool. A first adjusted diffraction signal is generated by adjusting the third measured diffraction signal using the first drift function.

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