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11. 发明授权

US08717135B2 Electronic component and method of manufacturing the same 有权
标题翻译：电子部件及其制造方法
公开(公告)号：US08717135B2
公开(公告)日：2014-05-06
申请号：US13566836
申请日：2012-08-03
申请人： Koichiro Wada , Masashi Kuwahara , Yoshinari Nakada , Yuichi Kasuya , Masanori Takahashi , Tetsuo Kumahora
发明人： Koichiro Wada , Masashi Kuwahara , Yoshinari Nakada , Yuichi Kasuya , Masanori Takahashi , Tetsuo Kumahora
IPC分类号： H01F27/02 , H01F27/24
CPC分类号： H01F27/02 , H01F1/33 , H01F17/045 , H01F27/022 , H01F27/255 , H01F27/292 , Y10T29/49071
摘要： An electronic component has a drum-shaped core member constituted by an assembly of soft magnetic alloy grains containing iron (Fe), silicate (Si) and chromium (Cr), a coil conductive wire wound around the core member, a pair of terminal electrodes connected to ends of the coil conductive wire, and an outer sheath resin part covering the wound coil conductive wire and constituted by a magnetic powder-containing resin; wherein there is an area where only the resin material in the magnetic powder-containing resin is permeated from the surface of the core member to a specified depth.
摘要翻译：电子部件具有由铁（Fe），硅酸盐（Si）和铬（Cr）组成的软磁性合金晶粒组成的鼓形铁芯构件，缠绕在芯构件上的线圈导电线，一对端子电极连接到线圈导线的端部，以及覆盖卷绕的线圈导线并由含磁性粉末的树脂构成的外护套树脂部; 其中存在只有含磁粉的树脂中的树脂材料从芯构件的表面渗透到指定深度的区域。

12. 发明授权

US5444271A Conductivity-modulated semiconductor device with high breakdown voltage 失效
标题翻译：具有高击穿电压的电导率调制半导体器件
公开(公告)号：US5444271A
公开(公告)日：1995-08-22
申请号：US105630
申请日：1993-08-13
申请人： Masashi Kuwahara
发明人： Masashi Kuwahara
IPC分类号： H01L29/78 , H01L21/331 , H01L21/336 , H01L29/08 , H01L29/739 , H01L21/223 , H01L27/02 , H01L29/74
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/7392
摘要： Base regions of a second conductivity type are formed and spaced apart from one another in a first major surface of a semiconductor substrate of a first conductivity type which functions as a drain region. Source regions of the first conductivity type are formed in each of the base regions and spaced apart from one another. Gate insulating films are formed on portions of the drain region which are located between adjacent source regions. Gates are formed on the gate insulating films. Source electrodes are formed such that each electrode short-circuits one-base region to the source regions formed in the base region. A first anode region of the second conductivity type is formed on a second major surface of the semiconductor substrate. A second anode region of the second conductivity type is formed on the first anode region. This second anode region is made of polycrystalline silicon of the second conductivity type and has an impurity concentration higher than that of the first anode region. An anode electrode is formed on the second anode region.
摘要翻译：在第一导电类型的半导体衬底的第一主表面中形成第二导电类型的基极区域并且彼此间隔开，其用作漏极区域。第一导电类型的源极区域形成在每个基极区域中并且彼此间隔开。栅极绝缘膜形成在位于相邻源极区域之间的漏极区域的部分上。栅极形成在栅极绝缘膜上。源电极形成为使得每个电极将一个碱基区域短路到形成在基极区域中的源极区域。第二导电类型的第一阳极区域形成在半导体衬底的第二主表面上。第二导电类型的第二阳极区形成在第一阳极区上。该第二阳极区由第二导电类型的多晶硅制成，其杂质浓度高于第一阳极区的杂质浓度。阳极电极形成在第二阳极区域上。

13. 发明授权

US5124772A Insulated gate bipolar transistor with a shortened carrier lifetime region 失效
标题翻译：绝缘栅双极晶体管与较窄的载体生命周期区域
公开(公告)号：US5124772A
公开(公告)日：1992-06-23
申请号：US579660
申请日：1990-09-10
申请人： Makoto Hideshima , Tetsujiro Tsunoda , Masashi Kuwahara , Shingo Yanagida
发明人： Makoto Hideshima , Tetsujiro Tsunoda , Masashi Kuwahara , Shingo Yanagida
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/32 , H01L29/36 , H01L29/739
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/32 , H01L29/36 , H01L29/0847 , Y10S438/904
摘要： In a power semiconductor device such as an IGBT, a fifth region of n conductivity type is provided. The fifth region is formed in a portion of a second region (drain region) contacting an insulating layer below the gate layer. The fifth region contacts a third region (base region) and has an impurity concentration higher than that of the second region. Therefore, even when a carrier life time is sufficiently short, an electron distribution density can be kept high in the entire fifth region and the second region under the third region (base region) near the fifth region, and the localization of a hole current is moderated (in a case of a p-type base and an n-type drain). As a result, a maximum controllable current is increased, and a wide safe operation area can be obtained.

14. 发明授权

US09125142B2 Node apparatus, communication system, and channel selection method 有权
标题翻译：节点装置，通信系统和信道选择方法
公开(公告)号：US09125142B2
公开(公告)日：2015-09-01
申请号：US13485188
申请日：2012-05-31
申请人： Shinichi Hirata , Jun Hasegawa , Takahiro Koharagi , Hiroaki Kawasumi , Katsumi Kobayashi , Masashi Kuwahara , Takuji Furusawa , Masaharu Nozawa
发明人： Shinichi Hirata , Jun Hasegawa , Takahiro Koharagi , Hiroaki Kawasumi , Katsumi Kobayashi , Masashi Kuwahara , Takuji Furusawa , Masaharu Nozawa
IPC分类号： H04W72/04 , H04W48/16 , H04W72/12 , H04W84/18
CPC分类号： H04W48/16 , H04W72/04 , H04W72/1289 , H04W84/18
摘要： A node apparatus for forming a wireless ad-hoc network, including: a recognition possibility determination unit that determines whether or not a gateway apparatus connecting the wireless ad-hoc network to other network can be recognized; an adjoining node detection unit that detects other node apparatus which is the source of a received packet as an adjoining node; a channel switching unit that switches, when the recognition possibility determination unit determines that the gateway apparatus cannot be recognized, the channel used for reception of packets transmitted in the wireless ad-hoc network successively to each of a plurality of channels; and a channel selection unit that selects a channel to be used for communication in the wireless ad-hoc network based on the number of adjoining nodes detected by the adjoining node detection unit in each of the plurality of channels.
摘要翻译：一种用于形成无线自组织网络的节点装置，包括：识别可能性确定单元，其确定是否可以识别将所述无线自组织网络连接到其他网络的网关装置; 邻接节点检测单元，其检测作为接收分组的源的其他节点设备作为邻接节点; 信道切换单元，当识别可能性确定单元确定网关设备不能被识别时，切换用于接收在无线自组织网络中发送的分组的信道，连续到多个信道中的每一个; 以及频道选择单元，其基于在所述多个频道中的每一个中的相邻节点检测单元检测到的相邻节点的数量，来选择所述无线自组织网络中要用于通信的频道。

15. 发明授权

US6060744A Semiconductor device with a main current cell region and a current detecting cell region 失效
标题翻译：具有主电流单元区域和电流检测单元区域的半导体器件
公开(公告)号：US6060744A
公开(公告)日：2000-05-09
申请号：US959275
申请日：1997-10-28
申请人： Masashi Kuwahara , Shuji Kamata
发明人： Masashi Kuwahara , Shuji Kamata
IPC分类号： G01R19/00 , H01L21/66 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/7813 , H01L29/7395 , H01L29/7815 , H01L29/0696
摘要： In a current detecting cell of a MOS-type semiconductor device with a current detection function, the area of the contact portions of source regions which contact a current detecting electrode is greater than that of that contact portion of a base region which contacts the current detecting electrode. With this feature, a parasitic resistance does no sharply decrease even if a detected voltage increases, and therefore, current can be detected accurately.
摘要翻译：在具有电流检测功能的MOS型半导体器件的电流检测单元中，与电流检测电极接触的源极区域的接触部分的面积大于接触电流检测的基极区域的接触部分的面积电极。利用该特征，即使检测到的电压增加，寄生电阻也不会急剧下降，因此可以精确地检测电流。

16. 发明授权

US4764802A Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：US4764802A
公开(公告)日：1988-08-16
申请号：US13792
申请日：1987-02-12
申请人： Masashi Kuwahara
发明人： Masashi Kuwahara
IPC分类号： H01L29/68 , H01L23/528 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/739 , H01L29/78
CPC分类号： H01L29/0696 , H01L23/528 , H01L29/7395 , H01L29/7802 , H01L2224/0603 , H01L2224/48091 , H01L2224/4846 , H01L2224/49111 , H01L24/48 , H01L29/41741 , H01L29/4238 , H01L2924/00014 , H01L2924/13091 , H01L2924/3011
摘要： A semiconductor device comprises a drain region, base regions, gate electrodes formed over the drain region between two adjacent base regions through an insulating layer such that each bridges the surface of the drain region to partially cover the two adjacent base regions, source regions provided in the base regions, a source electrode provided on the source regions, and a metal gate electrode wiring contacting the gate electrodes. The metal gate electrode wiring includes closed loop portions and the source electrode is divided into branch sections, each corresponding to the closed loop portion.
摘要翻译：半导体器件包括漏极区域，基极区域，通过绝缘层在两个相邻基极区域之间的漏极区域上形成的栅电极，使得每个桥接漏极区域的表面以部分地覆盖两个相邻的基极区域，基极区域，设置在源极区域上的源极电极以及与栅极电极接触的金属栅电极配线。金属栅电极布线包括闭环部分，源电极被分成分支部分，每个分支部分对应于闭环部分。

17. 发明授权

US08742992B2 Planar inverted F antenna 有权
标题翻译：平面倒F天线
公开(公告)号：US08742992B2
公开(公告)日：2014-06-03
申请号：US13443505
申请日：2012-04-10
申请人： Manabu Kai , Teruhisa Ninomiya , Takahiro Koharagi , Hiroaki Kawasumi , Katsumi Kobayashi , Takuji Furusawa , Masaharu Nozawa , Masashi Kuwahara
发明人： Manabu Kai , Teruhisa Ninomiya , Takahiro Koharagi , Hiroaki Kawasumi , Katsumi Kobayashi , Takuji Furusawa , Masaharu Nozawa , Masashi Kuwahara
IPC分类号： H01Q1/38 , H01Q1/24
CPC分类号： H01Q1/38 , H01Q1/243 , H01Q5/364 , H01Q5/371 , H01Q9/0421 , H01Q9/40 , H01Q9/42
摘要： In a planar inverted F antenna, a second radiation element is provided parallel to the GND surface and extending partially with respect to a first radiation element in a longitudinal direction, so as to substantially increase a width of the first radiation element in the vicinity of a power supply section.
摘要翻译：在平面倒F天线中，第二辐射元件平行于GND表面设置并相对于第一辐射元件在纵向方向上部分地延伸，以便基本上增加第一辐射元件的附近的宽度电源部分。

18. 发明授权

US08629748B2 Wire-wound inductor 有权
标题翻译：绕线电感
公开(公告)号：US08629748B2
公开(公告)日：2014-01-14
申请号：US13566847
申请日：2012-08-03
申请人： Yoshinari Nakada , Koichiro Wada , Yuichi Kasuya , Masanori Takahashi , Masashi Kuwahara , Tetsuo Kumahora
发明人： Yoshinari Nakada , Koichiro Wada , Yuichi Kasuya , Masanori Takahashi , Masashi Kuwahara , Tetsuo Kumahora
IPC分类号： H01F17/04 , H01F27/29 , H01F1/03 , H01F7/06 , C22C37/06
CPC分类号： H01F17/04 , H01F1/33 , H01F17/045 , H01F27/00 , H01F27/255 , H01F27/292 , H01F2017/048 , Y10T29/4902
摘要： Provided are a small wire-wound inductor having desired inductor characteristics, while allowing for high-density mounting and low-height mounting on circuit boards at the same time, as well as a method for manufacturing such wire-wound inductor which has a drum-shaped core member constituted by an assembly of soft magnetic alloy grains containing iron (Fe), silicon (Si) and 2 to 15 percent by weight of chromium (Cr), a coil conductive wire wound around the core member, a pair of terminal electrodes connected to the terminals of the coil conductive wire, and an outer sheath member covering the wound coil conductive wire and constituted by a magnetic powder-containing resin having a specified magnetic permeation ratio.
摘要翻译：提供了具有期望的电感特性的小型绕线电感器，同时允许同时在电路板上高密度安装和低高度安装，以及制造这种具有滚筒式电感器的绕线电感器的方法，由铁（Fe），硅（Si）和2〜15重量％的铬（Cr）构成的软磁性合金粒子的组合构成的环状芯部件，缠绕在芯部件上的线圈导电线，一对端子电极连接到线圈导线的端子，以及覆盖卷绕的线圈导线并由具有规定的磁导率的含磁性粉末的树脂构成的外护套构件。

19. 发明授权

US5821580A MOS device having a trench gate structure 失效
标题翻译： MOS器件具有沟槽栅极结构
公开(公告)号：US5821580A
公开(公告)日：1998-10-13
申请号：US840931
申请日：1997-04-25
申请人： Masashi Kuwahara
发明人： Masashi Kuwahara
IPC分类号： H01L29/78 , H01L27/04 , H01L27/088 , H01L29/10 , H01L29/739 , H01L29/76
CPC分类号： H01L29/1095 , H01L27/088 , H01L29/7397 , H01L29/7813 , H01L29/7815
摘要： In an IGBT of the trench gate structure having a current sensing function, a plurality of trench gates are formed in each of a main current cell region and a current sensing cell region. Of these trench gates, the trench gates formed at end portions of the cell regions have no source regions on their opposing faces so as to prevent channels from being formed at least on the opposing faces. The interval between the opposing channel faces of the main current cell region and current sensing cell region is increased in order that the resistance of a parasitic resistor becomes considerably higher than that of an external resistor leaving an interval between first and second P-type base regions unchanged. The operation imbalance between the cell regions can be prevented by setting the carrier distribution in the current sensing cell region directly under the second base region substantially equal to that in the main current cell region. Thus, both the temperature characteristic and withstanding characteristic of the device can be achieved and the linearity of the main current and sensed current can be improved.
摘要翻译：在具有电流感测功能的沟槽栅极结构的IGBT中，在主电流单元区域和电流感测单元区域中的每一个中形成多个沟槽栅极。在这些沟槽栅极中，形成在单元区域的端部处的沟槽栅极在其相对面上没有源极区域，以便防止至少在相对面上形成沟道。主电流单元区域和电流感测单元区域的相对通道面之间的间隔增加，使得寄生电阻器的电阻变得显着高于在第一和第二P型基极区域之间留下间隔的外部电阻器的电阻不变可以通过将电流感测单元区域中的载流子分布直接设置在基本上等于主电流单元区域的第二基极区域的下方来防止电池区域之间的操作不平衡。因此，可以实现器件的温度特性和耐受特性，并且可以提高主电流和感测电流的线性。

20. 发明授权

US5331184A Insulated gate bipolar transistor having high breakdown voltage 失效
标题翻译：具有高击穿电压的绝缘栅双极晶体管
公开(公告)号：US5331184A
公开(公告)日：1994-07-19
申请号：US928066
申请日：1992-08-11
申请人： Masashi Kuwahara
发明人： Masashi Kuwahara
IPC分类号： H01L29/78 , H01L29/08 , H01L29/739 , H01L29/74 , H01L23/58 , H01L29/76 , H01L31/111
CPC分类号： H01L29/7395 , H01L29/0834 , H01L2924/0002
摘要： An insulated gate bipolar transistor having a low on-voltage and a low turn-off time is provided. P-type anode layer having a low impurity concentration, preferably 1.times.10.sup.16 to 1.times.10.sup.1 7/cm.sup.3, is provided on an N-type drain layer that includes a pair of P-type base regions each having an N.sup.+ -type source region. A plurality of P.sup.+ -type anode regions are formed in the P-type anode layer.
摘要翻译：提供具有低导通电压和低关断时间的绝缘栅双极晶体管。在具有N +型源极区域的一对P型基极区域的N型漏极层上设置具有低杂质浓度，优选为1×10 16〜1×101 7 / cm 3的P型阳极层。在P型阳极层中形成多个P +型阳极区域。

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