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11. 发明申请

US20060046439A1 Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method 失效
标题翻译：通过所述方法获得的制造半导体器件和半导体器件的方法
公开(公告)号：US20060046439A1
公开(公告)日：2006-03-02
申请号：US10527777
申请日：2003-08-21
申请人： Ronald Dekker , Jan Baptist Van Der Putten , Ramon Havens
发明人： Ronald Dekker , Jan Baptist Van Der Putten , Ramon Havens
IPC分类号： H01L21/20 , H01L21/30 , H01L21/332 , H01L21/8234 , H01L21/50
CPC分类号： H01L29/66712 , H01L21/78 , H01L29/6631 , H01L29/781
摘要： The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at least one connection region (4), and, on the said side, a dielectric (5) is formed and patterned to leave free the connection region (4), after which a metal layer (6) is deposited over the dielectric (5) so as to be in contact with the connection region (4), which metal layer (6) serves as an electric connection conductor of the connection region (4), after which the temporary substrate (2) is removed and the metal layer (6) also serves as a substrate of the device (10). According to the invention, before the metal layer (6) is deposited, there is formed, around the patterned part of the dielectric (5) and around the semiconductor element (3), an annular region (7) of a resin having a larger thickness than the dielectric (5), and the metal layer (6) is deposited within the rectangular annular region (7). In this way, an individual device (10) can readily be formed after the metal layer (6) has been deposited, preferably by pushing the device (10) out of the region (7). Preferably, a (different) photoresist is chosen for the dielectric (5) and the region (7). The invention also comprises a semiconductor device (10) obtained in this way.
摘要翻译：本发明涉及一种制造半导体器件（10）的方法，其中在具有临时衬底（2）的半导体本体（1）中，形成至少一个半导体元件（3），其在半导体本体（1）与基板（2）相对设置有至少一个连接区域（4），并且在所述侧面上形成有电介质（5）并图案化以使连接区域（4）免费，之后将金属层（6）沉积在电介质（5）上以与连接区域（4）接触，该金属层（6）用作连接区域（4）的电连接导体，之后移除临时衬底（2），金属层（6）也用作器件（10）的衬底。根据本发明，在金属层（6）沉积之前，在电介质（5）的图案化部分周围形成围绕半导体元件（3）的环形区域（7），具有较大的厚度比电介质（5）厚，并且金属层（6）沉积在矩形环形区域（7）内。以这种方式，优选地，通过将装置（10）推出区域（7）之后，可以容易地在沉积金属层（6）之后形成单个装置（10）。优选地，为电介质（5）和区域（7）选择（不同的）光致抗蚀剂。本发明还包括以这种方式获得的半导体器件（10）。

12. 发明授权

US6046493A Semiconductor device with special emitter connection 失效
标题翻译：具有特殊发射极连接的半导体器件
公开(公告)号：US6046493A
公开(公告)日：2000-04-04
申请号：US887980
申请日：1997-07-03
申请人： Ronald Dekker , Ronald Koster
发明人： Ronald Dekker , Ronald Koster
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/417 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/70
CPC分类号： H01L29/7322 , H01L29/41708
摘要： A semiconductor device provided with a semiconductor substrate with a bipolar transistor having a collector region of a first conductivity type, a base region adjoining the collector region and of a second conductivity type opposed to the first, and an elongate emitter region of the first conductivity type adjoining the base region; the collector region, the base region, and the emitter region being provided with conductor tracks which are connected to conductive connection surfaces. The conductor track on the elongate emitter region of the semiconductor device has a connection to a connection surface for a further electrical connection at each of the two ends of the emitter region. The emitter region may be made longer in this manner because the length of the emitter region is effectively halved by the connections at the two ends. Consequently, charge carriers need be transported over no more than at most half the emitter length. The semiconductor device according to the invention is thus capable of supplying high powers because the charge transport is not limited by charge transport through the conductor track on the elongate emitter region.
摘要翻译：一种具有半导体衬底的半导体器件，其具有双极晶体管，该双极晶体管具有第一导电类型的集电极区域，与该集电极区域相邻的基极区域和与该第一导电类型相对的第二导电类型，以及第一导电类型的细长发射极区域邻接基部区域; 集电极区域，基极区域和发射极区域设置有连接到导电连接表面的导体轨道。在半导体器件的细长发射极区域上的导体轨道具有到连接表面的连接，用于在发射极区域的两端中的每一端处进一步的电连接。发射极区域可以以这种方式更长，因为发射极区域的长度被两端的连接有效地减半。因此，电荷载体需要不超过发射极长度的一半以下。因此，根据本发明的半导体器件能够提供高功率，因为电荷传输不受通过细长发射极区域上的导体轨道的电荷传输的限制。

13. 发明授权

US5915187A Method of manufacturing a semiconductor device with a pn junction provided through epitaxy 失效
标题翻译：通过外延生产具有pn结的半导体器件的方法
公开(公告)号：US5915187A
公开(公告)日：1999-06-22
申请号：US768482
申请日：1996-12-18
申请人： Frederikus R. J. Huisman , Wiebe B. De Boer , Oscar J. A. Bulik , Ronald Dekker
发明人： Frederikus R. J. Huisman , Wiebe B. De Boer , Oscar J. A. Bulik , Ronald Dekker
IPC分类号： H01L21/205 , H01L21/302 , H01L21/56 , H01L21/78 , H01L29/864 , H01L29/93 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/78 , H01L29/93
摘要： The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate (1), a pn junction (5) being formed between the second and first zones (3, 4, respectively). According to the invention, the method is characterized in that the epitaxial layer (2) is provided by means of a CVD process at a temperature below 800.degree. C., the epitaxial layer (2) being provided in that first the first zone (3) and then the second zone (4) are epitaxially provided on the substrate (1), while no heat treatments at temperatures above 800.degree. C. take place after the epitaxial layer (2) has been provided. The measure according to the invention renders it possible to achieve properties of semiconductor devices manufactured in accordance with the invention, for example the capacitance-voltage (CV) relation of varicap diodes, within wide limits according to specifications. In addition, semiconductor devices manufactured by the method according to the invention require no post-diffusion or measurement steps in order to bring the properties of the semiconductor device up to specifications.
摘要翻译：本发明涉及制造具有pn结的半导体器件的方法，由此具有第一导电类型的第一区（3）和与第二导电类型相反的第二导电类型的第二区（4）的外延层（2）第一设置在硅衬底（1）上，pn结（5）分别形成在第二区和第一区之间（3,4）。根据本发明，该方法的特征在于外延层（2）通过CVD工艺在低于800℃的温度下提供，外延层（2）设置在第一区域（3）），然后第二区（4）外延地设置在基板（1）上，而在提供了外延层（2）之后，在高于800℃的温度下不进行热处理。根据本发明的措施使得可以根据本发明制造的半导体器件的性质，例如变容二极管的电容 - 电压（CV）关系在根据规格的宽范围内。此外，通过根据本发明的方法制造的半导体器件不需要后扩散或测量步骤，以使半导体器件的性能达到规格。

14. 发明授权

US5770487A Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization 失效
标题翻译：制造器件的方法，通过该方法，将具有半导体元件和导体迹线的衬底通过金属化胶合到支撑体上
公开(公告)号：US5770487A
公开(公告)日：1998-06-23
申请号：US641058
申请日：1996-04-29
申请人： Henricus G. R. Maas , Ronald Dekker , Maria H. W. A. Van Deurzen
发明人： Henricus G. R. Maas , Ronald Dekker , Maria H. W. A. Van Deurzen
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L21/58 , H01L21/60 , H01L21/768 , H01L21/77 , H01L23/498 , H01L23/522 , H01L27/12 , H01L29/786 , H02M3/155 , H02M3/28 , H01L21/84
CPC分类号： H01L24/83 , H01L23/49811 , H01L24/29 , H01L24/81 , H01L2221/68368 , H01L2224/16 , H01L2224/24225 , H01L2224/2919 , H01L2224/81801 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/3025 , Y10S438/928 , Y10S438/977
摘要： A method of manufacturing a device whereby a layer structure with semiconductor elements and conductor tracks is formed on a first side of a semiconductor wafer which is provided with a layer of semiconductor material disposed on an insulating layer. Then the semiconductor wafer is fastened with said first side to a support wafer by means of a glue layer, the support wafer being provided with a metallization. Material is then removed from the semiconductor wafer from the other, second side thereof until the insulating layer is exposed. Contact windows are provided in the insulating layer from the first side of the semiconductor wafer before the latter is refastened on the support wafer. These windows are filled with a material which can be removed selectively relative to the insulating layer. The contact windows are opened from the second side of the semiconductor wafer after the latter has been fastened on the support wafer and after the insulating layer has been exposed. Furthermore, openings are formed in the layer structure and in the flue layer at the areas of the contact windows, which openings extend down to the metallization on the support wafer, after which the contact windows and the openings formed are provided with conductive elements.
摘要翻译：一种制造器件的方法，其中具有半导体元件和导体迹线的层结构形成在设置有设置在绝缘层上的半导体材料层的半导体晶片的第一侧上。然后，半导体晶片通过胶层与所述第一侧紧固到支撑晶片，所述支撑晶片设置有金属化。然后从另一个第二侧将材料从半导体晶片中取出直到绝缘层露出。在半导体晶片的第一侧的绝缘层中提供接触窗口，然后在支撑晶片上重新对准窗口。这些窗口填充有可相对于绝缘层选择性地去除的材料。在半导体晶片被固定在支撑晶片上之后并且在绝缘层已经暴露之后，接触窗口从半导体晶片的第二侧被打开。此外，在接触窗口的区域中的层结构和烟道层中形成开口，这些开口向下延伸到支撑晶片上的金属化，之后形成的接触窗口和开口设置有导电元件。

15. 发明授权

US5736452A Method of manufacturing a hybrid integrated circuit 失效
标题翻译：混合集成电路的制造方法
公开(公告)号：US5736452A
公开(公告)日：1998-04-07
申请号：US815245
申请日：1997-03-12
申请人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. Van Den Einden , Maria H. W. A. Van Deurzen
发明人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. Van Den Einden , Maria H. W. A. Van Deurzen
IPC分类号： H01L21/762 , H01L21/02 , H01L21/20 , H01L21/58 , H01L21/84 , H01L25/16 , H01L27/12 , H01L27/13 , H01P11/00 , H01L21/306
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01013 , H01L2924/01015 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107
摘要： A method of manufacturing a semiconductor device with a substrate (1) provided with a passive element (2), a pattern of conductors (3, 4), and a semiconductor element (5) which is formed in a small slice (6) of semiconductor material. The passive element (2), the pattern of conductors (3, 4), and the semiconductor element (5) are formed at a first side (8) of a wafer of semiconductor material (7), whereupon this wafer is glued with its first side (8) to the substrate (1), and the semiconductor material of the wafer (7) is removed from the second side (22) thereof, except at the area of the semiconductor element (5). A small slice (6) of semiconductor material thus remains in which the semiconductor element (5) has been formed. The wiring may be realized in a simple manner without the introduction of additional and expensive process steps, while the introduction of parasitic capacitances and self-inductances is counteracted.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有设置有无源元件（2）的基板（1），导体图案（3,4）和半导体元件（5），所述半导体器件形成在小片（6）中半导体材料。无源元件（2），导体（3,4）和半导体元件（5）的图案形成在半导体材料（7）的晶片的第一侧（8）处，由此将该晶片与其第一侧（8）到基板（1），并且除了半导体元件（5）的区域之外，晶片（7）的半导体材料从第二侧（22）除去。因此，保留形成半导体元件（5）的半导体材料的小片（6）。在不引入附加和昂贵的工艺步骤的情况下，可以以简单的方式实现布线，同时抵消了寄生电容和自感的引入。

16. 发明授权

US5629554A Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate 失效
标题翻译：半导体器件具有形成在绝缘衬底上的半导体材料层中的双极晶体管
公开(公告)号：US5629554A
公开(公告)日：1997-05-13
申请号：US637012
申请日：1996-04-24
申请人： Henricus G. R. Maas , Ronald Dekker , Armand Pruijmboom
发明人： Henricus G. R. Maas , Ronald Dekker , Armand Pruijmboom
IPC分类号： H01L29/73 , H01L21/331 , H01L29/735 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.
摘要翻译：一种具有双极晶体管的半导体器件，其形成在设置在绝缘基板（1）上的半导体材料层（2）中，其中，集电区（4），基极区（5）和发射极区（6）设置在位于层（2）上的绝缘材料条（3）的下方，这些区域连接到位于条带（3）附近的接触区域（7,8,9,10），三个接触区域（8），9,10）彼此相邻放置在条带（3）的同一侧，其中两个（8和9）连接到基部区域（5），而第三个（10）位于前者两个（8和9）连接到发射区（6）。位于带（3）的同一侧的另一侧的三个接触区域（8,9,10）交替地设置在半导体材料层（2）中，并在另一层半导体材料（19）中向上延伸（3）。连接到基部区域（5）和发射极区域（6）的三个接触区域（8,9,10）可以具有相对的间隔，该相互间隔小于可以通过光刻胶层光刻工艺用于制造晶体管。结果，晶体管可以用非常小的外在基极制造。

17. 发明授权

US5504036A Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice 失效
标题翻译：制造半导体器件的方法，半导体器件形成在设置在支撑片上的半导体材料层中
公开(公告)号：US5504036A
公开(公告)日：1996-04-02
申请号：US447597
申请日：1995-05-23
申请人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. van den Einden
发明人： Ronald Dekker , Henricus G. R. Maas , Wilhelmus T. A. J. van den Einden
IPC分类号： H01L21/60 , H01L21/02 , H01L21/027 , H01L21/336 , H01L21/68 , H01L21/84 , H01L23/48 , H01L27/12 , H01L29/786 , H01L21/44
CPC分类号： H01L21/6835 , H01L21/84 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2224/04042 , H01L2224/05599 , H01L2224/05624 , H01L2224/48463 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/1305 , H01L2924/1306 , Y10S148/012
摘要： A method is provided of manufacturing a semiconductor device whereby semiconductor elements (5) and conductor tracks (14) are formed on a first side (2) of a semiconductor slice (1) which is provided with a layer of semiconductor material (4) disposed on an insulating layer (3). Then the semiconductor slice (1) is fastened with said first side (2) to a support slice (15), after which material is removed from the semiconductor slice (1) from the other, second side (17) until the insulating layer (3) has become exposed. The insulating layer (3) is provided with contact windows (18) in which conductive elements (19) are provided. This is done from the first side (2) of the semiconductor slice (1) before the latter is fastened to the support slice (15). The semiconductor elements (5) are externally contacted with a contact wire (20) via the conductive elements (19). The contact windows (18) and the conductive elements (19) may be formed during process steps which are carried out for manufacturing the semiconductor elements.
摘要翻译：提供一种制造半导体器件的方法，由此在半导体片（1）的第一侧（2）上形成半导体元件（5）和导体轨道（14），半导体片（1）设置有设置有半导体材料层（4）在绝缘层（3）上。然后将半导体片（1）与所述第一侧（2）紧固到支撑片（15），然后将材料从另一个第二侧（17）从半导体片（1）移除直到绝缘层（ 3）已经暴露。绝缘层（3）设有接触窗（18），其中设有导电元件（19）。这在半导体片（1）的第一侧（2）之前完成，之后将其固定到支撑片（15）。半导体元件（5）经由导电元件（19）与接触导线（20）外部接触。接触窗（18）和导电元件（19）可以在用于制造半导体元件的工艺步骤期间形成。

18. 发明授权

US10209243B2 Cardiomyocyte containing device, manufacturing method and measuring method 有权
公开(公告)号：US10209243B2
公开(公告)日：2019-02-19
申请号：US13813970
申请日：2011-07-13
申请人： Ronald Dekker , Anja Van De Stolpe , Berent Jan Van Meer , Saeed Khoshefetrat Pakazad , Angel Savov
发明人： Ronald Dekker , Anja Van De Stolpe , Berent Jan Van Meer , Saeed Khoshefetrat Pakazad , Angel Savov
IPC分类号： B01L1/00 , B01L3/00 , G01N33/50 , D06F75/22
摘要： Disclosed is a device (100) for cardiac electrophysiology screening comprising a substrate (10) comprising a cavity (42), said substrate carrying a deformable layer (32) extending over said cavity (42), wherein a portion of said deformable layer (32) covers said cavity and acts as a membrane over said cavity (32), said portion having a surface comprising a pattern of grooves (44) and carrying a multi-electrode structure (110, 110′); and a plurality of cardiomyocytes (130) assembled in at least some of said grooves (44). A method of manufacturing such a device (100) is also disclosed.

19. 发明授权

US09986916B2 Catheter comprising capacitive micromachined ultrasonic transducers with an adjustable focus 有权
公开(公告)号：US09986916B2
公开(公告)日：2018-06-05
申请号：US13885791
申请日：2011-11-15
申请人： Max Oskar Köhler , Peter Dirksen , Shunmugavelu Sokka , Ronald Dekker
发明人： Max Oskar Köhler , Peter Dirksen , Shunmugavelu Sokka , Ronald Dekker
IPC分类号： A61B8/08 , A61B8/12 , A61B5/01 , A61N7/02 , B06B1/02 , A61B5/055 , A61B5/00 , A61B6/03 , A61B6/00 , A61B5/06 , A61B6/12 , A61B8/00 , A61B18/00 , A61N7/00 , A61B90/00
CPC分类号： A61B5/015 , A61B5/055 , A61B5/064 , A61B5/4836 , A61B6/03 , A61B6/12 , A61B6/4057 , A61B8/0841 , A61B8/12 , A61B8/445 , A61B8/4488 , A61B8/54 , A61B8/58 , A61B2018/00023 , A61B2090/064 , A61B2090/374 , A61B2562/028 , A61N7/022 , A61N2007/0095 , B06B1/0292 , G06F19/00
摘要： A catheter (700, 800, 1206) includes a shaft with distal (808, 906, 1004, 208) and proximal ends (1006). The distal end comprises at least one array of capacitive micromachined ultrasound transducers (308, 402, 404, 500, 512, 600, 604, 802, 008) with an adjustable focus for controllably heating a target zone (806, 1014, 1210). A connector (1012) at the proximal end supplies the at least one array of capacitive micromachined ultrasound transducers with electrical power and controls the adjustable focus.

20. 发明授权

US08965156B2 Beam combiner 有权
标题翻译：光束组合器
公开(公告)号：US08965156B2
公开(公告)日：2015-02-24
申请号：US13208806
申请日：2011-08-12
申请人： Edwin Jan Klein , Ronald Dekker , Hindrik F. Bulthuis
发明人： Edwin Jan Klein , Ronald Dekker , Hindrik F. Bulthuis
IPC分类号： G02F1/025 , G02B6/43 , G02B6/122 , G02B6/12 , G02B6/293
CPC分类号： G02B6/12007 , G02B6/29332 , G02B6/2938 , G02B2006/12061 , G02B2006/12123 , G02B2006/12147
摘要： A beam combiner is disclosed that comprises a planar lightwave circuit that is based on undoped silicon nitride-based surface waveguides, wherein the planar lightwave circuit comprises a plurality of input ports, a mixing region, and an output port, and wherein the mixing region comprises a plurality of directional couplers that are arranged in a tree structure. Embodiments of the present invention are capable of combining a plurality of light signals characterized by disparate wavelengths on irregular spacings with low loss. Further, the present invention enables high-volume, low cost production of beam combiners capable of combining three or more light signals into a single composite output beam.
摘要翻译：公开了一种组合器，其包括基于未掺杂的基于氮化硅的表面波导的平面光波电路，其中所述平面光波电路包括多个输入端口，混合区域和输出端口，并且其中所述混合区域包括以树结构布置的多个定向耦合器。本发明的实施例能够以不同的波长以不同的间隔组合以不同波长表征的多个光信号，并具有低损耗。此外，本发明能够高容量，低成本地生产能够将三个或更多个光信号组合成单个复合输出光束的光束组合器。

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