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    • 1. 发明授权
    • Semiconductor device with special emitter connection
    • 具有特殊发射极连接的半导体器件
    • US6046493A
    • 2000-04-04
    • US887980
    • 1997-07-03
    • Ronald DekkerRonald Koster
    • Ronald DekkerRonald Koster
    • H01L29/73H01L21/331H01L29/08H01L29/417H01L29/732H01L27/082H01L27/102H01L29/70
    • H01L29/7322H01L29/41708
    • A semiconductor device provided with a semiconductor substrate with a bipolar transistor having a collector region of a first conductivity type, a base region adjoining the collector region and of a second conductivity type opposed to the first, and an elongate emitter region of the first conductivity type adjoining the base region; the collector region, the base region, and the emitter region being provided with conductor tracks which are connected to conductive connection surfaces. The conductor track on the elongate emitter region of the semiconductor device has a connection to a connection surface for a further electrical connection at each of the two ends of the emitter region. The emitter region may be made longer in this manner because the length of the emitter region is effectively halved by the connections at the two ends. Consequently, charge carriers need be transported over no more than at most half the emitter length. The semiconductor device according to the invention is thus capable of supplying high powers because the charge transport is not limited by charge transport through the conductor track on the elongate emitter region.
    • 一种具有半导体衬底的半导体器件,其具有双极晶体管,该双极晶体管具有第一导电类型的集电极区域,与该集电极区域相邻的基极区域和与该第一导电类型相对的第二导电类型,以及第一导电类型的细长发射极区域 邻接基部区域; 集电极区域,基极区域和发射极区域设置有连接到导电连接表面的导体轨道。 在半导体器件的细长发射极区域上的导体轨道具有到连接表面的连接,用于在发射极区域的两端中的每一端处进一步的电连接。 发射极区域可以以这种方式更长,因为发射极区域的长度被两端的连接有效地减半。 因此,电荷载体需要不超过发射极长度的一半以下。 因此,根据本发明的半导体器件能够提供高功率,因为​​电荷传输不受通过细长发射极区域上的导体轨道的电荷传输的限制。
    • 2. 发明授权
    • Method of manufacturing a semiconductor device having a semiconductor
body with field insulation regions formed by grooves filled with
insulating material
    • 具有半导体本体的半导体器件的制造方法,该半导体器件具有由绝缘材料填充的沟槽形成的场绝缘区域
    • US5554256A
    • 1996-09-10
    • US310824
    • 1994-09-22
    • Armand PruijmboomRonald KosterCornelis E. TimmeringRonald Dekker
    • Armand PruijmboomRonald KosterCornelis E. TimmeringRonald Dekker
    • H01L21/31H01L21/308H01L21/76H01L21/00
    • H01L21/308H01L21/76
    • A method of manufacturing a semiconductor device comprising a semiconductor body (1) with field insulation regions (14) formed by grooves (10; 24) filled with an insulating material (13) is disclosed. The grooves (10; 24) are etched into the semiconductor body (1) with the use of an etching mask (9) formed on an auxiliary layer (6) provided on a surface (5) of the semiconductor body (1). The auxiliary layer (6) is removed from the portion (11) of the surface (5) situated next to the etching mask (9) before the grooves (10; 24) are etched into the semiconductor body (1), and the auxiliary layer (6) is removed from the edge (12) of the surface (5) situated below the etching mask (9) after the grooves (10; 24) have been etched into the semiconductor body. Furthermore, a layer (13) of the insulating material is deposited on the semiconductor body (1), whereby the grooves (10; 24) are filled and the edge (12) of the surface (5) situated below the etching mask (9) is covered. Then the semiconductor body is subjected to a treatment whereby material is taken off parallel to the surface (5) down to the auxiliary layer (6), and finally the remaining portion of the auxiliary layer (6) is removed. Field insulation regions are thus formed which extend over an edge (12) of the active regions (15) surrounded by the field insulation regions (14) with a strip (18) which has no overhanging edge.
    • 公开了一种制造半导体器件的方法,该半导体器件包括具有由绝缘材料(13)填充的沟槽(10; 24)形成的场绝缘区域(14)的半导体本体(1)。 使用形成在设置在半导体本体(1)的表面(5)上的辅助层(6)上的蚀刻掩模(9),将凹槽(10; 24)蚀刻到半导体本体(1)中。 在凹槽(10; 24)被蚀刻到半导体本体(1)中之前,从邻近蚀刻掩模(9)的表面(5)的部分(11)去除辅助层(6),并且辅助层 在凹槽(10; 24)被蚀刻到半导体本体中之后,从位于蚀刻掩模(9)下方的表面(5)的边缘(12)去除层(6)。 此外,绝缘材料的层(13)沉积在半导体本体(1)上,由此填充凹槽(10; 24),并且位于蚀刻掩模(9)下方的表面(5)的边缘(12) )被覆盖。 然后对半导体体进行处理,由此将材料平行于表面(5)取下到辅助层(6),最后除去辅助层(6)的剩余部分。 这样形成了场绝缘区域,该区域由具有不突出边缘的条带(18)在由绝缘区域(14)包围的有源区域(15)的边缘(12)上延伸。
    • 5. 发明申请
    • CARDIOMYOCYTES-CONTAINING DEVICE AND METHOD FOR MANUFACTURING AND USING THE SAME
    • 含有血小板活性的装置及其制造和使用方法
    • US20120094323A1
    • 2012-04-19
    • US13147607
    • 2010-02-02
    • Ronald DekkerAnja Van De Stolpe
    • Ronald DekkerAnja Van De Stolpe
    • C12Q1/18H01B13/00B05D5/00C12M1/34B05D1/36
    • G01N1/30C12N5/0657C12N2503/02C12N2535/10G01N33/5061
    • Disclosed is a device for determining the cardiotoxicity of a chemical compound, comprising a substrate (10) carrying a deformable stack (34), said stack being partially detached from the substrate by a cavity (32) allowing an out-of-plane deformation of the stack, said stack comprising a first deformable layer (16), a second deformable layer (20) and a multi-electrode structure (18) sandwiched between the first and second deformable layers, the second deformable layer carrying a pattern of cardiomyocytes (28) adhered thereto; and a liquid container (26) mounted on the substrate for exposing the cardiomyocytes to the chemical compound. A method of manufacturing such a device is also disclosed. The present invention further relates to the use of the device for drug target discovery and/or drug development and a method for developing a disease model for a disease that is caused by or modified by stretching of cells, in particular a cardiac disease model.
    • 公开了一种用于确定化合物的心脏毒性的装置,包括承载可变形叠层(34)的基底(10),所述叠层通过空腔(32)部分地与基底分离,允许外部变形 所述堆叠包括夹在所述第一和第二可变形层之间的第一可变形层(16),第二可变形层(20)和多电极结构(18),所述第二可变形层承载心肌细胞图案(28 ) 和安装在基板上的用于将心肌细胞暴露于化合物的液体容器(26)。 还公开了制造这种装置的方法。 本发明还涉及该装置用于药物靶发现和/或药物开发的用途,以及用于开发由细胞拉伸,特别是心脏疾病模型引起或改变的疾病的疾病模型的方法。
    • 9. 发明申请
    • DEFORMABLE INTEGRATED CIRCUIT DEVICE
    • 可变电容集成电路
    • US20100270640A1
    • 2010-10-28
    • US12377673
    • 2007-08-07
    • Ronald DekkerAntoon Marie Henrie TombeurTheodoros Zoumpoulidis
    • Ronald DekkerAntoon Marie Henrie TombeurTheodoros Zoumpoulidis
    • H01L23/52H01L21/98
    • H01L23/49833H01L23/5387H01L2924/0002H01L2924/00
    • An integrated-circuit device is provided, which comprises a rigid substrate island having a main substrate surface with a circuit region circuit elements and at least one fold structure. The fold structure is attached to the substrate island and is unfoldable from a relaxed, folded state to a strained unfolded state. The fold structure contains at least one passive electrical component. The fold structure further has in its folded state at least one surface with an area vector that includes a non-vanishing area-vector component in a direction parallel to the main substrate surface, which area-vector component is diminished or vanishes when deforming the fold structure from the folded into the unfolded state. The fold structure provided by the present invention allows fabricating the integrated-circuit device with small lateral extensions and thus takes up a particularly small amount of chip area, which reduces the cost per device.
    • 提供了一种集成电路器件,其包括具有主衬底表面的刚性衬底岛,其具有电路区域电路元件和至少一个折叠结构。 折叠结构附接到基底岛,并且可以从松弛的折叠状态展开到应变展开状态。 折叠结构包含至少一个无源电组件。 折叠结构在其折叠状态下进一步具有面向向的至少一个表面,该区域向量在平行于主衬底表面的方向上包括非消失的面积 - 矢量分量,该区域 - 矢量分量在折叠变形时减少或消失 结构从折叠到展开状态。 由本发明提供的折叠结构允许制造具有小横向延伸的集成电路器件,因此占据特别小量的芯片面积,这降低了每个器件的成本。