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11. 发明授权

US06802955B2 Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface 有权
标题翻译：用于在工件表面上的材料的电化学沉积和平坦化的方法和装置
公开(公告)号：US06802955B2
公开(公告)日：2004-10-12
申请号：US10044514
申请日：2002-01-11
申请人： Ismail Emesh , Periya Gopalan , Phillip M. Rayer, II , Bentley J. Palmer
发明人： Ismail Emesh , Periya Gopalan , Phillip M. Rayer, II , Bentley J. Palmer
IPC分类号： B23H300
CPC分类号： C25D17/14 , B23H5/08 , C25D7/123 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.
摘要翻译：提供了一种电化学装置，其将材料沉积在工件表面上或从工件表面去除材料。该设备包括抛光垫和压板，该压板又由与抛光垫接触并与第一电位接触的第一导电层，耦合到第二电位的第二导电层以及设置在第二电位之间的第一绝缘层第一和第二导电层。至少一个电触点位于抛光垫内并电耦合到第二导电层。提供一个储存器，其将电解质溶液与抛光垫和工件接触。载体定位和/或将工件压靠在抛光垫上。

12. 发明授权

US07297239B2 Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface 有权
标题翻译：用于在工件表面上的材料的电化学沉积和平坦化的方法和装置
公开(公告)号：US07297239B2
公开(公告)日：2007-11-20
申请号：US10921666
申请日：2004-08-18
申请人： Ismail Emesh , Periya Gopalan , Phillip M. Rayer, II , Bentley J. Palmer
发明人： Ismail Emesh , Periya Gopalan , Phillip M. Rayer, II , Bentley J. Palmer
IPC分类号： C25D17/14 , C25F7/00 , B23H5/06 , B23H7/22
CPC分类号： C25D17/14 , B23H5/08 , C25D7/123 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.
摘要翻译：提供了一种电化学装置，其将材料沉积在工件表面上或从工件表面去除材料。该设备包括抛光垫和压板，该压板又包括与抛光垫接触并与第一电位接触的第一导电层，耦合到第二电位的第二导电层和设置在第二电位之间的第一绝缘层第一和第二导电层。至少一个电触点位于抛光垫内并电耦合到第二导电层。提供一个储存器，其将电解质溶液与抛光垫和工件接触。载体定位和/或将工件压靠在抛光垫上。

13. 发明申请

US20070017818A1 Solution for electrochemical mechanical polishing 审中-公开
标题翻译：电化学机械抛光解决方案
公开(公告)号：US20070017818A1
公开(公告)日：2007-01-25
申请号：US11185591
申请日：2005-07-19
申请人： Ismail Emesh , Bulent Basol
发明人： Ismail Emesh , Bulent Basol
IPC分类号： B23H5/00
CPC分类号： B23H5/08 , C25D3/02 , H01L21/32125 , H01L21/7684
摘要： A system and method for electropolishing a conductive surface of a wafer using an electrolyte comprising an electrically resistive agent that modulates the conductivity of the electrolyte. The electrically resistive agent is a urea or a urea derivative. The electrolyte may also include a chelating agent a pH adjusting agent, and/or a surface film forming agent. The system includes a wafer carrier configured to hold the wafer, a polishing pad, and an electrode in proximity to the polishing pad. The wafer carrier may be configured to rotate or laterally move the wafer on the polishing surface of the polishing pad.
摘要翻译：一种使用电解质电解抛光晶片的导电表面的系统和方法，所述电解质包括调节电解质的导电性的电阻剂。电阻剂是脲或脲衍生物。电解质还可以包括螯合剂，pH调节剂和/或表面成膜剂。该系统包括被配置为将晶片，抛光垫和电极保持在抛光垫附近的晶片载体。晶片载体可以被配置为在抛光垫的抛光表面上旋转或横向移动晶片。

14. 发明申请

US20070293040A1 FILLING DEEP FEATURES WITH CONDUCTORS IN SEMICONDUCTOR MANUFACTURING 有权
标题翻译：在半导体制造中填充导体的深度特征
公开(公告)号：US20070293040A1
公开(公告)日：2007-12-20
申请号：US11742302
申请日：2007-04-30
申请人： Ismail Emesh , Chantal Arena , Bulent Basol
发明人： Ismail Emesh , Chantal Arena , Bulent Basol
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L21/288
摘要： A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.
摘要翻译：公开了一种在晶片表面形成的三维积分特征中填充导电材料的方法。该特征可选地衬有介电和/或粘附/阻挡层，然后填充含有导电前体的液体混合物，例如具有溶解的钌前体的溶液或具有导电颗粒（例如金，银，铜）的分散体或悬浮液，并且当混合物在其表面上时基板旋转。然后，从特征中干燥液体载体，在该特征中留下导电层。可选地重复这两个步骤，直到特征被导体填满。然后，导体在特征中退火，从而在该特征中形成致密的导电插塞。

15. 发明申请

US20070111523A1 Process for conditioning conductive surfaces after electropolishing 审中-公开
标题翻译：电解抛光后导电表面的调理工艺
公开(公告)号：US20070111523A1
公开(公告)日：2007-05-17
申请号：US11283112
申请日：2005-11-17
申请人： Ismail Emesh , Bulent Basol
发明人： Ismail Emesh , Bulent Basol
IPC分类号： H01L21/44
CPC分类号： H01L21/32115 , H01L21/02074 , H01L21/32125 , H01L21/67028 , H01L21/67051
摘要： A method of conditioning an electropolished conductive layer of a substrate is disclosed, the conductive layer having impurities thereon. The conductive layer may be formed on a thin conductive film or barrier layer that coats one or more cavities formed on the substrate surface. The method comprises applying a first process solution onto the electropolished conductive layer to dissolve a portion thereof, and then applying a second process solution onto the conductive layer. The second process solution is preferably configured to charge and move the impurities away from the conductive layer. The substrate surface can then be rinsed to remove the first and second process solutions and the impurities.
摘要翻译：公开了一种调节基底的电抛光导电层的方法，该导电层上具有杂质。导电层可以形成在涂覆在衬底表面上形成的一个或多个空腔的薄导电膜或阻挡层上。该方法包括将第一工艺溶液施加到电抛光导电层上以溶解其一部分，然后将第二工艺溶液施加到导电层上。第二工艺溶液优选构造成使杂质从导电层充电并移动。然后可以将衬底表面漂洗以除去第一和第二工艺溶液和杂质。

16. 发明授权

US07201828B2 Planar plating apparatus 有权
标题翻译：平面电镀设备
公开(公告)号：US07201828B2
公开(公告)日：2007-04-10
申请号：US10758752
申请日：2004-01-15
申请人： Ismail Emesh
发明人： Ismail Emesh
IPC分类号： C25D17/00 , C25D7/12
CPC分类号： C25D17/14 , B23H3/00 , C25D17/001 , H01L21/2885
摘要： An apparatus for performing an electrochemical process on a surface of a workpiece comprises a platen assembly comprising a support platen, an electrolyte distribution plate, and a first conductive layer intermediate the support platen and distribution plate and configured to be coupled to at least a first potential. A carrier is configured to carry the workpiece and position the workpiece proximate the electrolyte distribution plate. A reservoir delivers an electrolyte to the electrolyte distribution plate. At least one contact separate from the platen assembly engages a peripheral region of the workpiece for coupling the workpiece to a second potential.
摘要翻译：一种用于在工件的表面上执行电化学过程的装置包括压板组件，该压板组件包括支撑压板，电解质分配板和位于支撑压板和分配板之间的第一导电层，并且被配置为耦合到至少第一电位。载体构造成承载工件并将工件定位在电解质分配板附近。储存器将电解质递送到电解质分配板。与压板组件分离的至少一个触点与工件的周边区域接合，以将工件耦合到第二电位。

17. 发明授权

US06818604B2 System and method for cleaning workpieces 失效
标题翻译：用于清洁工件的系统和方法
公开(公告)号：US06818604B2
公开(公告)日：2004-11-16
申请号：US09971332
申请日：2001-10-04
申请人： Ismail Emesh , Yakov Epshteyn , Periya Gopalan , Guangshum Chen , Xingbo Yang
发明人： Ismail Emesh , Yakov Epshteyn , Periya Gopalan , Guangshum Chen , Xingbo Yang
IPC分类号： C11D732
CPC分类号： H01L21/67046 , B08B1/04 , G11B23/505
摘要： The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge. Manipulating the surface charge of a sponge during and/or after cleaning of a workpiece may enhance cleaning of the workpiece, by attracting oppositely charged particles and/or repelling similarly charged particles from the workpiece surface. Manipulating the surface charge of a sponge may also enhance cleaning of the sponge, by reducing or eliminating the attractive forces between the surface of the sponge and the charged particles attached to it.
摘要翻译：本发明一般涉及用于改进工件和工件清洁工具的清洁的系统和方法。更具体地，本发明提供了通过将它们暴露于各种清洁流体来操纵一种或多种海绵的表面电荷来清洁工件和海绵的系统和方法。在一个实施例中，使用具有正，负或中性电荷的诸如PVA海绵的海绵来清洁诸如半导体晶片的工件的表面。在清洁工件时，海绵可能会暴露于工件清洁液中，这可能会影响或不会改变海绵的表面电荷。在清洁工件之后，海绵可能暴露于海绵清洗液中，这可能会改变或不会改变海绵的表面电荷。在清洁工件期间和/或之后操作海绵的表面电荷可以通过从工件表面吸引带相反电荷的颗粒和/或排斥相似带电的颗粒来增强工件的清洁。操纵海绵的表面电荷还可以通过减少或消除海绵表面和附着在其上的带电粒子之间的吸引力来增强海绵的清洁。

18. 发明授权

US07625814B2 Filling deep features with conductors in semiconductor manufacturing 有权
标题翻译：在半导体制造中填充导体的深层特征
公开(公告)号：US07625814B2
公开(公告)日：2009-12-01
申请号：US11742302
申请日：2007-04-30
申请人： Ismail Emesh , Chantal J. Arena , Bulent M. Basol
发明人： Ismail Emesh , Chantal J. Arena , Bulent M. Basol
IPC分类号： H01L21/338 , H01L21/8234 , H01L21/8244 , H01L21/44
CPC分类号： H01L21/76898 , H01L21/288
摘要： A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.
摘要翻译：公开了一种在晶片表面形成的三维积分特征中填充导电材料的方法。该特征可选地包含电介质和/或粘附/阻挡层，然后填充含有导电前体的液体混合物，例如具有溶解的钌前体的溶液或具有导电颗粒（例如金，银，铜）的分散体或悬浮液，并且当混合物在其表面上时基板旋转。然后，从特征中干燥液体载体，在该特征中留下导电层。可选地重复这两个步骤，直到特征被导体填满。然后，导体在特征中退火，从而在该特征中形成致密的导电插塞。

19. 发明申请

US20090065365A1 METHOD AND APPARATUS FOR COPPER ELECTROPLATING 审中-公开
标题翻译：铜电镀的方法和装置
公开(公告)号：US20090065365A1
公开(公告)日：2009-03-12
申请号：US11853174
申请日：2007-09-11
申请人： Ayse Durmus , Ismail Emesh
发明人： Ayse Durmus , Ismail Emesh
IPC分类号： C23C28/02 , C25D17/00
CPC分类号： C25D5/02 , C25D3/38 , C25D17/00
摘要： A method and apparatus for a copper electroplating procedure, wherein a first additive is preferentially adsorbed onto the field region of a substrate and a second additive is preferentially adsorbed onto the surfaces of at least one recessed region of the substrate, is provided. The first additive is more resistive to the electrodeposition relative to the second additive such that the recessed regions are filled at a faster rate than a layer is deposited on the field region.
摘要翻译：一种铜电镀工艺的方法和装置，其中第一添加剂被优先吸附到衬底的场区上，并且第二添加剂被优先吸附到衬底的至少一个凹陷区域的表面上。第一添加剂相对于第二添加剂对电沉积具有更大的阻力，使得凹陷区域以比沉积在场区域上的层更快的速率被填充。

20. 发明申请

US20060003566A1 Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects 审中-公开
标题翻译：利用晶片间互连的半导体制造方法和装置
公开(公告)号：US20060003566A1
公开(公告)日：2006-01-05
申请号：US10882481
申请日：2004-06-30
申请人： Ismail Emesh
发明人： Ismail Emesh
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/2885 , B23H5/08 , C25D3/02 , C25D3/38 , C25D5/02 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/67219 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided for forming semiconductor packages utilizing a device-ready wafer having a through-wafer via interconnect. One exemplary method comprises etching a via extending from a first surface of the device-ready wafer and terminating within the wafer. The first surface of the device-ready wafer is contacted with a wafer contact surface while relative motion between the device-ready wafer and the wafer contact surface is effected. An electrochemical deposition composition comprising a conductive material is supplied to the first surface of the wafer and an electric potential difference is applied between the first surface of the wafer and an anode. Conductive material is deposited within the via and a portion of the wafer is removed from a second surface of the wafer to expose the conductive material within the via.
摘要翻译：提供了利用具有通过晶片通孔互连的器件就绪晶片形成半导体封装的方法。一种示例性方法包括蚀刻从器件就绪晶片的第一表面延伸并终止于晶片内的通孔。器件就绪晶片的第一表面与晶片接触表面接触，同时实现器件就绪晶片和晶片接触表面之间的相对运动。将包含导电材料的电化学沉积组合物供应到晶片的第一表面，并且在晶片的第一表面和阳极之间施加电位差。导电材料沉积在通孔内，并且晶片的一部分从晶片的第二表面移除以暴露通孔内的导电材料。

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