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    • 13. 发明授权
    • Gas treating apparatus
    • 气体处理装置
    • US6080227A
    • 2000-06-27
    • US185688
    • 1998-11-04
    • Masaji KurosawaKatsuhiro YamashitaTakeya Kobayashi
    • Masaji KurosawaKatsuhiro YamashitaTakeya Kobayashi
    • B01D53/06
    • B01D53/06B01D2253/108B01D2253/3425B01D2257/708B01D2259/40009B01D2259/4009
    • A VOC concentrating apparatus includes a honeycomb rotor. In order to lower concentration at an exit of adsorption and at the same time to be able to regulate the amount of air flow introduced into a desorbing zone, independently from the amount of cooling air, there are disposed a cooling zone, desorbing zone and an adsorbing zone in the honeycomb rotor. The honeycomb rotor rotates and thus passes through the zones one after another. After gas to be treated has passed through the adsorbing zone, concentration of VOC in the gas is measured on the exit side by a concentration detector. The cooling air is divided by a damper for regulating the amount of air flow, after having entered the cooling zone, and a part thereof enters the desorbing zone through a heater. Further air coming out therefrom is heated again by a heater to enter the desorbing zone and concentrated gas is removed.
    • VOC浓缩装置包括蜂窝转子。 为了降低吸附出口处的浓度,同时能够调节导入解吸区域的气流量,独立于冷却空气量,设置有冷却区,解吸区和 蜂窝转子中的吸附区。 蜂窝转子旋转,从而一个接一个地穿过这些区域。 在待处理气体通过吸附区后,通过浓度检测器在出口侧测量气体中VOC的浓度。 冷却空气由进入冷却区之后用于调节空气流量的阻尼器分开,其一部分通过加热器进入解吸区域。 再次通过加热器再次加热出来的空气进入解吸区域,并且除去浓缩气体。
    • 15. 发明授权
    • Resin composition for laser engraving, relief printing plate precursor for laser engraving and process for producing same, and process for making relief printing plate
    • 用于激光雕刻的树脂组合物,用于激光雕刻的凸版印刷版前体及其制造方法,以及用于制造凸版印刷版的工艺
    • US08563668B2
    • 2013-10-22
    • US13169636
    • 2011-06-27
    • Katsuhiro Yamashita
    • Katsuhiro Yamashita
    • C08F285/00C08K5/24G03C1/00
    • B41C1/05B41N1/12
    • A resin composition is provided that includes two or more types of compounds selected from the group consisting of (Component A) a compound comprising a silicon atom having a total of one or two alkoxy and hydroxy groups, (Component B) a compound comprising a silicon atom having a total of three alkoxy and hydroxy groups, and (Component C) a compound comprising a silicon atom having a total of four alkoxy and hydroxy groups. There are also provided a relief printing plate precursor that includes a relief-forming layer formed from the resin composition, a process for producing a relief printing plate precursor that includes a layer formation step of forming a relief-forming layer from the resin composition and a crosslinking step of thermally crosslinking the relief-forming layer so as to form a crosslinked relief-forming layer.
    • 提供一种树脂组合物,其包含两种或更多种选自(组分A)包含总共一个或两个烷氧基和羟基的硅原子的化合物的组分(组分B)包含硅的化合物 具有总共三个烷氧基和羟基的原子,和(组分C)包含总共四个烷氧基和羟基的硅原子的化合物。 还提供了一种凸版印刷版原版,其包括由该树脂组合物形成的凸版形成层,一种凸版印刷版原版的制造方法,其包括从该树脂组合物形成凸版形成层的层形成步骤和 交联步骤,使交联形成层交联形成交联的浮雕形成层。
    • 16. 发明授权
    • Layout device and layout method of semiconductor integrated circuit
    • 半导体集成电路的布局装置和布局方法
    • US08402415B2
    • 2013-03-19
    • US13039955
    • 2011-03-03
    • Sawako FukunagaYuuki TakahashiKatsuhiro Yamashita
    • Sawako FukunagaYuuki TakahashiKatsuhiro Yamashita
    • G06F17/50
    • G06F17/50
    • A layout method of a semiconductor integrated circuit includes five steps. The first step is of extracting a wiring crowding place where wiring lines are crowded as compared with a predetermined condition, after carrying out a routing in a region where a placement of circuit elements is carried out. The second step is of generating routing prohibition regions where a routing is prohibited in an area including the wiring crowding place. The third step is of carrying out a routing by bypassing the routing prohibition regions. The fourth step is of deleting the routing prohibition regions. The fifth step is of carrying out a re-routing. The generating step includes: calculating a size and an interval of the routing prohibition regions based on a rate for generating a routing prohibition region in the area in each wiring layer, and generating the routing prohibition regions in the area on the basis of the calculating result.
    • 半导体集成电路的布置方法包括五个步骤。 第一步是在执行电路元件放置的区域中进行路由之后,提取与预定条件相比布线线路挤满的地方。 第二步是生成路由禁止区域,其中路由被禁止在包括布线拥挤位置的区域中。 第三步是绕过路由禁​​止区域进行路由。 第四步是删除路由禁止区域。 第五步是进行重路由。 所述生成步骤包括:基于在所述布线层的所述区域中生成路由禁止区域的速率来计算所述路由禁止区域的大小和间隔,并且基于所述计算结果生成所述区域中的所述路由禁止区域 。
    • 19. 发明申请
    • Metal-polishing liquid and chemical-mechanical polishing method using the same
    • 金属抛光液和化学机械抛光方法使用相同
    • US20070167016A1
    • 2007-07-19
    • US11701403
    • 2007-02-02
    • Katsuhiro Yamashita
    • Katsuhiro Yamashita
    • H01L21/461
    • H01L21/3212C09G1/02C09K3/1463C23F3/06
    • A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formula (I), R1 represents an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; R2 represents hydrogen atom, an alkyl group, alkynyl group, alkenyl group, allyl group or aryl group; m represents an integer from 0 to 6. In Formula (II), R3 represents an alkyl group or aryl group; n represents an integer from 1 to 30. R1—OOC—(CH2)m—COO—R2  Formula (I) R3—O—(CH2CH2O)n—SO3H  Formula (II)
    • 金属抛光液包括胶体二氧化硅和由式(I)表示的化合物或由式(II)表示的化合物。 胶体二氧化硅被铝原子的至少一部分硅表面的硅原子取代。 在式(I)中,R 1表示烷基,炔基,烯基,烯丙基或芳基; R 2表示氢原子,烷基,炔基,烯基,烯丙基或芳基; m表示0至6的整数。在式(II)中,R 3表示烷基或芳基; n表示1至30的整数。<?in-line-formula description =“In-line Formulas”end =“lead”?> R 1 -OOC-(CH 2) 式(I)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line formula”end =“lead”?> R 3 -O-(CH 2 CH 2) (II)<?在线公式描述=“在线公式”end =“tail”?>