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11. 发明授权

US4599710A Integrated memory circuit of a series-parallel-series type 失效
标题翻译：串并联型集成式存储电路
公开(公告)号：US4599710A
公开(公告)日：1986-07-08
申请号：US605958
申请日：1984-05-01
申请人： Marcellinus J. M. Pelgrom , Johannes G. Raven , Jan W. Slotboom , Hendrik A. Harwig , Marcellinus J. J. C. Annegarn
发明人： Marcellinus J. M. Pelgrom , Johannes G. Raven , Jan W. Slotboom , Hendrik A. Harwig , Marcellinus J. J. C. Annegarn
IPC分类号： H04N5/907 , G11C5/06 , G11C7/00 , G11C7/22 , G11C8/18 , G11C11/401 , G11C19/28
CPC分类号： G11C19/285 , G11C5/066 , G11C7/22 , G11C8/18
摘要： In a series-parallel-series memory circuit (3) which requires a write clock signal (at 19), a transfer clock signal (at 25) and a read clock signal (at 31), it is sufficient, because a clock signal processing circuit (23) is provided, to apply only two clock signals (to 33 and 35). Using a gate circuit (41), it is possible to obtain from one clock signal (applied to 35) additional information, which is provided by means of pulse duration variation, for adapting the time delay of the memory circuit (FIG. 1).
摘要翻译：在需要写入时钟信号（at 19），传输时钟信号（25）和读取时钟信号（31））的串并联串行存储器电路（3）中，由于时钟信号处理提供电路（23），仅施加两个时钟信号（至33和35）。使用门电路（41），可以从一个时钟信号（施加到35）获得由脉冲持续时间变化提供的附加信息，以适应存储器电路（图1）的时间延迟。

12. 发明授权

US07786506B2 Semiconductor devices with a field shaping region 有权
标题翻译：具有场成形区域的半导体器件
公开(公告)号：US07786506B2
公开(公告)日：2010-08-31
申请号：US12177258
申请日：2008-07-22
申请人： Anco Heringa , Raymond J. E. Hueting , Jan W. Slotboom
发明人： Anco Heringa , Raymond J. E. Hueting , Jan W. Slotboom
IPC分类号： H01L29/74
CPC分类号： H01L29/7802 , H01L29/0649 , H01L29/0653 , H01L29/402 , H01L29/408 , H01L29/73 , H01L29/732 , H01L29/7811 , H01L29/7813 , H01L29/7824 , H01L29/861
摘要： A semiconductor device includes a semiconductor region having a pn junction and a field shaping region located adjacent the pn junction to increase the reverse breakdown voltage of the device. The field shaping region is coupled via capacitive voltage coupling regions to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction and the device is non-conducting, a capacitive electric field is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region. The electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region in the semiconductor region.
摘要翻译：半导体器件包括具有pn结的半导体区域和位于pn结附近的场整形区域，以增加器件的反向击穿电压。场整形区域经由电容性电压耦合区域耦合到与施加到pn结的基本相同的电压。当在pn结上施加反向电压并且器件不导通时，在场成形区域的一部分中存在电容电场，其延伸超过不存在pn结区域的pn结耗尽区的极限场整形区域。场成形区域中的电场引起限制在半导体区域中相应延伸的pn结耗尽区的拉伸电场。

13. 发明授权

US4907049A Charge-coupled semiconductor device having an improved electrode structure 失效
标题翻译：具有改进的电极结构的电荷耦合半导体器件
公开(公告)号：US4907049A
公开(公告)日：1990-03-06
申请号：US385928
申请日：1989-07-27
申请人： Jan W. Slotboom , Henricus G. R. Maas , Kazimierz Osinki , Geert J. T. Davids
发明人： Jan W. Slotboom , Henricus G. R. Maas , Kazimierz Osinki , Geert J. T. Davids
IPC分类号： H01L29/762 , H01L21/339 , H01L27/10 , H01L29/423 , H01L29/76 , H01L29/772
CPC分类号： H01L29/66954 , H01L29/42396
摘要： A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, transfer electrodes are arranged in the grooves, these electrodes being coplanar with the remaining electrodes. The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.
摘要翻译：电荷耦合半导体器件具有用于存储和传送信息传送电荷的多个硅电极，这些电极位于绝缘层上并且由宽度至多为1μm的沟槽相互分离。根据本发明，转移电极布置在凹槽中，这些电极与剩余的电极共面。传输电极下面的绝缘层的厚度基本上等于存储电极下方的厚度。本发明还涉及制造具有这种电极系统的半导体器件的方法。

14. 发明授权

US4504930A Charge-coupled device 失效
标题翻译：电荷耦合器件
公开(公告)号：US4504930A
公开(公告)日：1985-03-12
申请号：US414109
申请日：1982-09-02
申请人： Hendrik A. Harwig , Jan W. Slotboom , Marcellinus J. M. Pelgrom
发明人： Hendrik A. Harwig , Jan W. Slotboom , Marcellinus J. M. Pelgrom
IPC分类号： G11C27/04 , G11C19/28 , H01L21/339 , H01L27/105 , H01L29/762 , G11C13/00
CPC分类号： H01L27/1057 , G11C19/287
摘要： The invention relates to a charge-coupled SPS memory comprising a series input register, a parallel section and a series output register. In order to increase the retention time leakage current drain regions are provided beside the memory. Since the charge collected as a result of leakage current is largest during the transport through the outermost registers of the parallel section, only the sides of the parallel section are screened by the said draining regions which preferably consist of dummy registers. FIG. 1.
摘要翻译：本发明涉及一种电荷耦合SPS存储器，其包括串联输入寄存器，并联部分和串联输出寄存器。为了增加保持时间，泄漏电流漏极区域设置在存储器的旁边。由于在通过并行部分的最外面寄存器的传输期间由于泄漏电流而收集的电荷最大，所以平行部分的侧面仅由虚拟寄存器组成的排水区域进行屏蔽。图。 1。

15. 发明申请

US20100097135A1 TUNNEL FIELD EFFECT TRANSISTOR 有权
标题翻译：隧道场效应晶体管
公开(公告)号：US20100097135A1
公开(公告)日：2010-04-22
申请号：US12444140
申请日：2007-10-03
申请人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A.M. Hurkx , Radu Surdeanu
发明人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A.M. Hurkx , Radu Surdeanu
IPC分类号： H03K3/353 , H01L29/78
CPC分类号： H01L29/161 , H01L29/165 , H01L29/7391
摘要： A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
摘要翻译：隧道晶体管包括与漏扩散（6）相反的导电类型的源极扩散（4），使得在较低掺杂区域（8）中的源极和漏极扩散之间形成耗尽层。绝缘栅极（16）控制耗尽层的位置和厚度。该装置包括形成在由下层（2）和盖层（22）的不同材料制成的聚集层（20）中的量子阱。

16. 发明授权

US5412705A X-ray examination apparatus with an imaging arrangement having a plurality of image sensors 失效
标题翻译：具有成像装置的X射线检查装置具有多个图像传感器
公开(公告)号：US5412705A
公开(公告)日：1995-05-02
申请号：US108865
申请日：1993-08-18
申请人： Rudolph M. Snoeren , Jan W. Slotboom
发明人： Rudolph M. Snoeren , Jan W. Slotboom
IPC分类号： A61B6/00 , G02B5/28 , G21K4/00 , H04N5/32 , H05G1/64 , H04N1/00
CPC分类号： G02B5/285 , G21K4/00 , H04N5/32 , H05G1/64 , G21K2004/04 , G21K2004/06
摘要： An x-ray examination apparatus includes an imaging arrangement, devised for performing fluoroscopy. Which has image sensors that are efficiently optically coupled with an x-ray sensitive radiation conversion screen. Consequently, the image sensors produce an electrical signal having a high signal-to-noise ration when low doses of x-radiation are administered. An x-ray conversion screen is provided with a tapetum filter so as to concentrate light in the forward direction. Furthermore, the x-ray conversion screen is preferably fitted with a light reflecting layer for reflecting light that has been reflected by the tapetum filter, said light reflecting layer being transparent for x-radiation. Further concentration of light in the forward direction is achieved by placing a light-transparent material having a suitable refractive index between the radiation conversion screen and lenses that concentrate the light onto the image sensors. Semiconductor image sensors in the form of charge-coupled devices are provided for converting a visible image into an electronic video signal. In order to improve the effectiveness of the CCDs, weak avalanching is applied so as to increase both sensitivity and signal-to-noise ratio of the sensors.
摘要翻译： X射线检查装置包括用于进行荧光透视的成像装置。其具有与X射线敏感的辐射转换屏有效地光耦合的图像传感器。因此，当施加低剂量的x射线时，图像传感器产生具有高信噪比的电信号。 X射线转换屏幕设置有绒毡层过滤器，以将光在向前方向上聚焦。此外，x射线转换屏幕优选配备有用于反射已被绒毡层过滤器反射的光的光反射层，所述光反射层对于x辐射是透明的。通过在辐射转换滤色片和将光聚焦到图像传感器上的透镜之间放置具有合适折射率的光透明材料来实现向前方向的进一步浓度。提供了电荷耦合器件形式的半导体图像传感器，用于将可视图像转换为电子视频信号。为了提高CCD的有效性，应用弱雪崩，以增加传感器的灵敏度和信噪比。

17. 发明授权

US4766332A Detecting binary information from a charge transfer device 失效
标题翻译：从电荷转移装置检测二进制信息
公开(公告)号：US4766332A
公开(公告)日：1988-08-23
申请号：US704891
申请日：1985-02-22
申请人： Marcellinus J. M. Pelgrom , Hendrik A. Harwig , Jan W. Slotboom
发明人： Marcellinus J. M. Pelgrom , Hendrik A. Harwig , Jan W. Slotboom
IPC分类号： G11C27/04 , G11C19/28 , H01L29/78 , H03K5/24
CPC分类号： G11C19/285
摘要： A method of detecting binary information from the pulse-shaped output signal of a CCD uses a varying reference voltage which depends on the amplitude of the last pulse detected, in order to render the detection system immune to pulse distortion as a result of transfer losses in the CCD.
摘要翻译：从CCD的脉冲输出信号检测二进制信息的方法使用取决于检测到的最后脉冲的振幅的变化的参考电压，以使检测系统免受作为传输损失的脉冲失真 CCD。

18. 发明授权

US07423299B2 Semiconductor devices with a field shaping region 有权
标题翻译：具有场成形区域的半导体器件
公开(公告)号：US07423299B2
公开(公告)日：2008-09-09
申请号：US10556802
申请日：2004-05-06
申请人： Anco Heringa , Raymond J. E. Hueting , Jan W. Slotboom
发明人： Anco Heringa , Raymond J. E. Hueting , Jan W. Slotboom
IPC分类号： H01L29/74
CPC分类号： H01L29/7802 , H01L29/0649 , H01L29/0653 , H01L29/402 , H01L29/408 , H01L29/73 , H01L29/732 , H01L29/7811 , H01L29/7813 , H01L29/7824 , H01L29/861
摘要： A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions (204,205) to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction (101) and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region (201), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region (208,209) and an increased reverse breakdown voltage of the device.
摘要翻译：具有pn结（101）的半导体器件（例如二极管（200））具有与pn结相邻且可能桥接的绝缘材料场整形区域（201）。场成形区域（201）优选地具有高介电常数，并且经由电容性电压耦合区域（204,205）耦合到与施加到pn结的基本相同的电压。当在pn结（101）上施加反向电压并且器件不导通时，电容电场存在于场成形区域的一部分中，其延伸超过将存在的pn结耗尽区的极限在不存在场整形区域（201）的情况下，场成形区域中的电场引起限制到相应延伸的pn结耗尽区域（208,209）的拉伸电场和该器件的反向击穿电压的增加。

19. 发明授权

US06777780B2 Trench bipolar transistor 失效
标题翻译：沟槽双极晶体管
公开(公告)号：US06777780B2
公开(公告)日：2004-08-17
申请号：US10205555
申请日：2002-07-25
申请人： Raymond J. E. Hueting , Jan W. Slotboom , Petrus H. C. Magnee
发明人： Raymond J. E. Hueting , Jan W. Slotboom , Petrus H. C. Magnee
IPC分类号： H01L27082
CPC分类号： H01L29/402 , H01L29/0821 , H01L29/405 , H01L29/407 , H01L29/73 , H01L29/7371 , H01L29/739
摘要： The invention relates to a trench bipolar transistor structure, having a base 7, emitter 9 and collector 4, the latter being divided into a higher doped region 3 and a lower doped drift region 5. An insulated gate 11 is provided to deplete the drift region 5 when the transistor is switched off. The gate 11 and/or doping levels in the drift region 5 are arranged to provide a substantially uniform electric field in the drift region in this state, to minimise breakdown. In particular, the gate 11 may be seminsulating and a voltage applied along the gate between connections 21,23.
摘要翻译：本发明涉及一种沟槽双极晶体管结构，其具有基极7，发射极9和集电极4，后者被分成较高掺杂区3和下掺杂漂移区5.绝缘栅11被设置成消耗漂移区 5当晶体管关闭时。漂移区5中的栅极11和/或掺杂电平被布置成在该状态下在漂移区中提供基本上均匀的电场，以最小化破坏。特别地，栅极11可以是半绝缘的，并且沿连接21,23之间的栅极施加电压。

20. 发明授权

US5502326A Semiconductor device provided having a programmable element with a high-conductivity buried contact region 失效
标题翻译：提供具有可编程元件的半导体器件具有高导电性掩埋接触区域
公开(公告)号：US5502326A
公开(公告)日：1996-03-26
申请号：US381002
申请日：1995-01-25
申请人： Jan W. Slotboom , Pierre H. Woerlee , Reinout Woltjer
发明人： Jan W. Slotboom , Pierre H. Woerlee , Reinout Woltjer
IPC分类号： H01L27/10 , G11C17/16 , H01L21/8246 , H01L23/525 , H01L27/102 , H01L27/112 , H01L29/00 , H01L27/095
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002 , Y10S257/91
摘要： A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying junction (8) with the material of the semiconductor region (4). To achieve a comparatively high conductivity connection to the semiconductor region (4), the element is further provided with a contact region (3) which has a comparatively low electrical resistance compared with the semiconductor region (4). The contact region (3) is provided at a side of the semiconductor region (4) remote from the insulating layer (5) and is separated from the insulating layer (5) by the semiconductor region (4). Both the semiconductor region (4) and the contact region (5) are laterally bounded by an isolating region (7) at opposing sides. The invention thus offers a device provided with a programmable element of a substantially more compact structure than a comparable conventional programmable element.
摘要翻译：半导体器件包括具有掺杂半导体区域（4）的可编程元件和通过绝缘层（5）的至少一部分彼此分离的导体区域（6）。导体区域（6）是适于与半导体区域（4）的材料形成整流结（8）的材料。为了实现与半导体区域（4）的较高的导电性连接，元件还具有与半导体区域（4）相比具有相对低的电阻的接触区域（3）。接触区域（3）设置在远离绝缘层（5）的半导体区域（4）的一侧，并且通过半导体区域（4）与绝缘层（5）分离。半导体区域（4）和接触区域（5）都由相对侧的隔离区域（7）横向界定。因此，本发明提供了一种具有比可比较的常规可编程元件基本上更紧凑结构的可编程元件的装置。

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